密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性（Ih、Oh、D5h、D3h）密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn）掺杂团簇的结构及磁性．结果表明：除Al12Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应．     

密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性(Ih、Oh、D5h、D3h)密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12 X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn)掺杂团簇的结构及磁性.结果表明:除Al12 Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12 Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应.     

过渡金属氮化物中单原子固溶和力学性能的第一性原理研究

基于密度泛函理论(DFT)的第一性原理,计算Si原子在Ti族和V族氮化物中以及B、C和Ge原子在TiN晶体中固溶的稳定结构,讨论置换型和间隙型固溶的低能量稳定结构与晶体间距的关系,研究金属氮化物和固溶原子固溶结构的力学性能.结果表明:Si原子在TiN、ZrN、HfN和TaN晶体中固溶以及Ge原子在TiN晶体中固溶情况为,单原子不进入对应过渡金属氮化物晶体中形成间隙固溶或置换固溶,随着晶体间距离变化单原子可以在晶体之间形成间隙固溶或置换固溶;Si原子在NbN以及B原子在TiN晶体中可以实现间隙固溶,而不能形成置换固溶;Si原子在VN和C原子在TiN晶体中固溶结构形式均为置换固溶.单原子固溶形成低能量置换型固溶体和间隙型固溶体的弹性常数、体模量和剪切模量均低于原过渡金属氮化物的对应值.     

合金元素对Ag/Al界面性质影响的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算和分析Ag(111)/Al(111)界面体系的能量与电子结构,讨论Ag中加入的Be、Mg、Al、Ca、Ni、Sn合金化元素对Ag/Al界面性质的影响.结果表明:Ni原子倾向于界面处的取代位置,而Be、Mg原子倾向于靠近界面处的取代位置,Al、Ca、Sn原子倾向于远离界面处的取代位置;合金元素Be、Mg、Al、Ca、Ni、Sn的加入均会使Ag/Al界面的稳定性降低,其中Ca元素的影响程度最大,分离功降低到0.923 J/m~2,界面能增至0.703 J/m~2;通过电子结构计算结果分析认为,导致界面稳定性下降的主要原因应是合金化元素的加入使界面间形成的Ag-Al共价键强度降低引起.     

镓置换铝对SrAl2Si2O8:Eu2+晶体结构和发光特性的影响

采用高温固相法在弱还原气氛下制备了Sr0.955Al2-xGaxSi2O8:Eu2+ (x=0～1.0)系列荧光粉,研究了Ga3+置换铝Al3+对晶体结构和光谱特性的影响.Ga3+进入SrAl2Si2O8晶格与Al3+发生类质同相替代使晶胞参量a、b、c、β和晶胞体积V都随Ga3+置换量呈线性增大,表明形成了连续固溶体...     

Mg8Sn4-xMx结构稳定性与弹性常数的第一性原理计算

利用基于密度泛函理论的CASTEP软件构建Mg₈Sn_4-xM_x(M=Al、Cu;x=0、1或2)晶体结构模型，采用第一性原理计算其晶格常数、结构稳定性和弹性常数，并分析不同量的M原子固溶于Mg₂Sn后体系的电子特性、弹性性能和本征硬度.计算结果表明，M原子能自发固溶于Mg₂Sn相，且所得Mg₈Sn_4-xM_x(x=1或2)晶体结构均可稳定存在；当2个M原子固溶于Mg₂Sn时，使其晶体结构由立方晶系转变为四方晶系.态密度分析表明，M原子固溶后体系原子存在明显轨道杂化现象，表现出较强的共价键，增加M原子固溶量不会改变各原子对态密度的贡献规律，但会提高该原子对电子对态密度的贡献度.弹性性能和本征硬度分析表明：Mg₂Sn中固溶M原子后，体系力学性能仍稳定，增加M原子固溶量，体系硬度逐渐降低，韧塑性不断提高，即M原子固溶量增加能提升体系的...     

超过饱和固溶W-B合金力学性质的第一性原理研究

针对小原子元素在金属合金中可同时提高硬度和韧性的现象,本文采用基于第一性原理方法,研究了W-B合金的超过饱和固溶结构和力学性能.计算结果表明：无论是几何结构的晶格畸变,还是热力学上的结合能,B原子以置换形式固溶于W晶体中均优于其他固溶形式,这主要是由于置换B原子与周围W原子形成以共价型为主兼有离子型的键合作用.在合金中添加B元素虽然降低了合金材料的弹性模量,杨氏模量由414.34 GPa降低至338.36 GPa,但却显著增加了材料的韧性,B/G值由1.97提高到2.30(纯W晶体相较于B含量6.25 at.%时).并且合金的各向异性显著地减弱.另外,合金中B元素的添加,还使得材料理想剪切强度和最大应变值也得到了增加,分别由原来的19.981 GPa和0.187增加至21.814 GPa和0.209.这说明B元素在W合金中的超过饱和固溶不仅增加了合金的强度,还提高了合金的韧性.     

Si在TiAl3中取代行为的第一性原理研究

采用基于密度泛函理论的第一性原理方法,研究了Si原子在TiAl3中的格点取代行为.通过对不同原子被置换后的c/a值、形成能以及电子态密度的计算和比较,发现Si原子倾向于取代TiAl3中的Al原子,其取代行为主要由系统的电子结构决定,计算结果与实验相符.为了进一步研究Si原子的取代行为,对Si原子占据的格点以松散或紧凑分布下体系的总能、形成能以及电子态密度进行了计算,结果表明Si原子倾向于取代TiAl3中松散分布的Al(2)原子.对c/a值的计算表明,随Al(2)格点Si原子浓度的增加,c/a值逐渐增大;而当Si取代Al(1)格点时,c/a值随Si原子浓度的增加而减小.研究表明,Si在TiAl3中的极限固溶度介于12.5at%-18.75at%之间.     

镓置换铝对SrAl2Si2O8∶Eu2+晶体结构和发光特性的影响

采用高温固相法在弱还原气氛下制备了Sr0.955Al2－xGaxSi2O8∶Eu2+ (x=0～1.0)系列荧光粉,研究了Ga3+置换铝Al3+对晶体结构和光谱特性的影响.Ga3+进入SrAl2Si2O8晶格与Al3+发生类质同相替代使晶胞参量a、b、c、β和晶胞体积V都随Ga3+置换量呈线性增大,表明形成了连续固溶体.镓置换铝对晶胞参量c的影响最明显,b其次,a最小.Eu2+的宽带激发光谱位于230～400 nm,表观峰值位于350 nm,可由267 nm、305 nm、350 nm和375 nm四个峰拟合而成.随着镓置换量增加,较短波长的三个激发峰发生红移并且267 nm和350 nm峰强度减弱,305 nm峰强度明显增强,375 nm峰位和强度基本不变,表观激发峰半高宽由109 nm减小至98 nm,基本不随镓置换量变化.发射光谱位于380～600 nm为不对称宽带,可由406 nm和441 nm两峰拟合而成并且随Ga3+置换量增加线性红移,拟合发射光谱峰面积之比线性递增,Ga3+进入晶格对较长波长发射中心影响较大.Ga3+置换量为1.0 mol时,表观发射峰位从407 nm线性红移至422 nm,表观峰值随Ga3+置换量线性增大,半高宽由58 nm增加至79 nm.镓置换铝造成Eu-O距离变小,发光中心Eu2+所处晶体场增强,5d轨道能级分裂变大,最低发射能级下移.     

Tb0.3 Dy0.7(Fe0.9 T0.1)1.95合金的结构、自旋重取向和穆斯堡尔谱

系统研究了室温下Tb0.3Dy0.7(Fe0.9T0.1195(过渡金属元素T=Mn,Fe,Co,B,Al,Ga)合金中ⅢA族金属和过渡金属元素T替代Fe对结构、自旋重取向和穆斯堡尔谱的影响.结果发现,不同金属T替代Fe,Tb0.3Dy0.7(Fe009T0.11.95,合金具有相同的MgCu2型立方Laves相结构;Al,Ga替代使Tb0.3Dy0.7(Fe09T0.11.95合金的易磁化方向在{110}面逐渐偏离了立方晶体的主对称轴,即自旋重取向,B,Mn,Co替代未使易磁化轴发生明显转动;Al,Ga元素替代使超精细场Hhf略有下降,B,Mn替代对超精细场Hhf的影响不大,而Co元素替代使超精细场Hhf有较大增加;所有元素替代使同质异能移IS有所增加;B,Al,Ga和Mn替代使四极劈裂Qs增加,而Co替代使四极劈裂Qs下降.     

3d过渡金属在NiAl中的占位及对键合性质的影响

通过赝势平面波方法系统地研究了3d过渡金属元素在B2-NiAl中的占位以及对键合性质的影响.通过形成能得出Sc,Ti,V 和Zn元素优先取代NiAl中的Al位,而Cr,Mn,Fe,Co和Cu优先取代Ni位.通过分析晶格常数变化量、电荷聚居数、交叠聚居数以及价电荷密度分布, 讨论了晶格畸变和键合性质的变化.结果表明: 取代Al的Sc,Ti,V和Zn元素掺杂使NiAl中晶格发生畸变,这对NiAl键合性质的变化起着重要作用,这些掺杂元素与第一近邻Ni原子产生强烈的排斥作用,形成反键,同时它们之间发生较大的电荷转 关键词： NiAl金属间化合物 3d过渡金属 第一性原理 键合性质     

Hume-Rothery electron concentration rule across a whole solid solution range in a series of gamma-brasses in Cu–Zn,Cu–Cd,Cu–Al,Cu–Ga,Ni–Zn and Co–Zn alloy systems

The aim of the present work is to examine if the Hume-Rothery stabilisation mechanism holds across whole solid solution ranges in a series of gamma-brasses with especial attention to the role of vacancies introduced into the large unit cell. The concentration dependence of the number of atoms in the unit cell, N, for gamma-brasses in the Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga, Ni–Zn and Co–Zn alloy systems was determined by measuring the density and lattice constants at room temperature. The number of itinerant electrons in the unit cell, e/uc, is evaluated by taking a product of N and the number of itinerant electrons per atom, e/a, for the transition metal element deduced earlier from the full-potential linearised augmented plane wave (FLAPW)-Fourier analysis. The results are discussed within the rigid-band model using as a host the density of states (DOS) derived earlier from the FLAPW band calculations for the stoichiometric gamma-brasses Cu₅Zn₈, Cu₉Al₄ and TM₂Zn₁₁ (TM = Co and Ni). A solid solution range of gamma-brasses in Cu–Zn, Cu–Cd, Cu–Al, Cu–Ga and Ni–Zn alloy systems is found to fall inside the existing pseudogap at the Fermi level. This is taken as confirmation of the validity of the Hume-Rothery stability mechanism for a whole solute concentration range of these gamma-brasses. An exception to this behaviour was found in the Co–Zn gamma-brasses, where orbital hybridisation effects are claimed to play a crucial role in stabilisation.     

铂族及过渡金属对Ti合金钝化影响机理研究

采用递归法计算了Ti合金的电子结构,从电子层面证实了Ni, Co, Pt, Ru, Ir在合金表面偏聚．聚集的Ni, Co以团簇的形式分布在合金表面,Pt, Ru, Ir与钛形成有序相．合金元素团簇与不含合金元素的Ti区形成微电池,在腐蚀介质的作用下使Ti优先分解,留下难溶的合金元素的颗粒在合金表面形成富集层．有序相中Ti的活性高于合金元素,Ti溶解,同样留下合金元素的颗粒在合金表面形成富集层．合金元素的富集层通过电催化作用促进Ti合金的钝化,从而提高Ti合金的抗腐蚀能力．同时添加贵金属和过渡元素（Ru和 关键词： 电子结构 表面偏聚 电催化 钝化机理     

3d过渡金属元素掺杂Al12N12纳米线几何结构和电子性能的第一性原理研究

基于密度泛函理论的第一性原理计算方法,系统地研究了不同3d过渡金属元素(Sc、Ti、V、Cr、Mn、Fe、Co和Ni)掺杂Al₁₂N₁₂纳米线的几何结构、稳定性和电子结构.结果表明：所有掺杂体系均是热力学稳定的;掺杂Ni时体系保留了原有的非磁性间接带隙半导体特性;当掺杂其它原子(Sc、Ti、V、Cr、Mn、Fe、Co)时体系仍然保持为半导体,但带隙明显减小.掺杂过渡金属原子对于Al₁₂N₁₂纳米线的电子结构具有明显的调控作用,在能带调控和光电方面有潜在的应用前景.     

Spin state of Co in Al (acac)3

The spin state of Co in Al(acac)₃ was studied and the result that Co atoms are in the low-spin state in the matrix was obtained. It suggests a metalic atom in a solid solution of two kinds of tris-acetylacetone complex is in the low-spin state when these two complexes have the same crystal structure.     

High-temperature site preference and atomic short-range ordering characteristics of ternary alloying elements in γ’-Ni3Al intermetallics

Abstract

Remarkable high-temperature mechanical properties of nickel-based superalloys are correlated with the arrangement of ternary alloying elements in L1₂-type-ordered γ′-Ni₃Al intermetallics. In the current study, therefore, high-temperature site occupancy preference and energetic-structural characteristics of atomic short-range ordering (SRO) of ternary alloying X elements (X = Mo, W, Ta, Hf, Re, Ru, Pt or Co) in Ni₇₅Al_21.875X_3.125 alloy systems have been studied by combining the statistico-thermodynamical theory of ordering and electronic theory of alloys in the pseudopotential approximation. Temperature dependence of site occupancy tendencies of alloying X element atoms has been predicted by calculating partial ordering energies and SRO parameters of Ni-Al, Ni-X and Al-X atomic pairs. It is shown that, all ternary alloying element atoms (except Pt) tend to occupy Al, whereas Pt atoms prefer to substitute for Ni sub-lattice sites of Ni₃Al intermetallics. However, in contrast to other X elements, sub-lattice site occupancy characteristics of Re atoms appear to be both temperature- and composition-dependent. Theoretical calculations reveal that site occupancy preference of Re atoms switches from Al to both Ni and Al sites at critical temperatures, T_c, for Re > 2.35 at%. Distribution of Re atoms at both Ni and Al sub-lattice sites above T_c may lead to localised supersaturation of the parent Ni₃Al phase and makes possible the formation of topologically close-packed (TCP) phases. The results of the current theoretical and simulation study are consistent with other theoretical and experimental investigations published in the literature.     

Element segregation on the surfaces of pure aluminum foils

The surface segregation trend of trace elements in pure aluminum foils was investigated by density functional theory. The model of nine-layer Al(1 0 0) slab substituted partially by trace element atoms was proposed for calculating surface segregation energy. The calculating results show that (i) B, Mg, Si, Ga, Ge, Y, In, Sn, Sb, Pb and Bi exhibit negative segregation energy and possibly move to the surface, while Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zr exhibit positive segregation energies and migrated into the bulk; (ii) the segregation energy was found to be related with the covalent radius, the relaxed position at the surface of the substituting atom and the surface energy; (iii) the segregation behavior of trace element generates lots of defects and dislocation, which can increase the initial pitting nucleation sites in the surface of aluminum foils; (iv) the impurity atom concentration was tested with Pb-doped surfaces, the calculated negative segregation energies in all coverage increases rapidly with the Pb coverage. These conclusions are helpful for designing of the chemical composition and to advance the tunnel etching of aluminum foils.     

Inverse-Heusler合金Ti_2Co_(1-x)Ni_xGa的磁性和半金属性

利用第一性原理计算了Inverse-Heusler合金Ti_2Co_(1-x)Ni_xGa的半金属性、磁性和电子性质.计算结果表明Ti_2Co_(1-x)Ni_xGa的原胞总磁矩和晶格常数随着x的增加而增加.由于过渡金属原子之间的直接杂化和sp电子的调节,原胞总磁矩和晶格常数随掺杂浓度x的改变而改变,并与Slater Pauling规则形成一定的差异.当Ni的掺杂浓度x=0.5时,Ti_2Co_(1-x)Ni_xGa合金的费米面在自旋向下带隙的中间位置,因而可以判定Ti2Co0.5Ni0.5Ga将具有最佳的半金属稳定性.     

热退火处理对AuGeNi/n-AlGaInP欧姆接触性能的影响

本文在n-(Al0.27Ga0.73)0.5In0.5P表面通过电子束蒸发Ni/Au/Ge/Ni/Au叠层金属并优化退火工艺成功制备了具有较低接触电阻的欧姆接触,其比接触电阻率在445℃退火600 s时达到1.4×10–4 W·cm2.二次离子质谱仪测试表明,叠层金属Ni/Au/Ge/Ni/Au与n-AlGaInP界面发生固相反应,Ga,In原子由于热分解发生外扩散并在晶格中留下Ⅲ族空位.本文把欧姆接触形成的原因归结为Ge原子内扩散占据Ga空位和In空位作为施主提高N型掺杂浓度.优化退火工艺对低掺杂浓度n-(Al0.27Ga0.73)0.5In0.5P的欧姆接触性能有显著改善效果,但随着n-(Al0.27Ga0.73)0.5In0.5P掺杂浓度提高,比接触电阻率与退火工艺没有明显关系.本文为n面出光的AlGaInP薄膜发光二极管芯片的n电极制备提供了一种新的方法,有望大幅简化制备工艺,降低制造成本.     

Elastic moduli of nanocrystalline binary Al alloys with Fe,Co, Ti,Mg and Pb alloying elements

The paper studies the elastic moduli of nanocrystalline (NC) Al and NC binary Al–X alloys (X is Fe, Co, Ti, Mg or Pb) by using molecular dynamics simulations. X atoms in the alloys are either segregated to grain boundaries (GBs) or distributed randomly as in disordered solid solution. At 0 K, the rigidity of the alloys increases with decrease in atomic radii of the alloying elements. An addition of Fe, Co or Ti to the NC Al leads to increase in the Young’s E and shear μ moduli, while an alloying with Pb decreases them. The elastic moduli of the alloys depend on a distribution of the alloying elements. The alloys with the random distribution of Fe or Ti demonstrate larger E and μ than those for the corresponding alloys with GB segregations, while the rigidity of the Al–Co alloy is higher for the case of the GB segregations. The moduli E and μ for polycrystalline aggregates of Al and Al–X alloys with randomly distributed X atoms are estimated based on the elastic constants of corresponding single-crystals according to the Voigt-Reuss-Hill approximation, which neglects the contribution of GBs to the rigidity. The results show that GBs in NC materials noticeably reduce their rigidity. Furthermore, the temperature dependence of μ for the NC Al–X alloys is analyzed. Only the Al–Co alloy with GB segregations shows the decrease in μ to the lowest extent in the temperature range of 0–600 K in comparison with the NC pure Al.