难熔元素钨在NiAl位错体系中的占位及对键合性质的影响

用第一性原理离散变分方法研究了难熔元素钨(W)在金 属间化合物NiAl<100>(010)刃型位错体系中的占位以及对键合性质的影响, 计算了纯位错体系和掺杂体系的能量参数(结合能、 杂质偏聚能及原子间相互作用能)、 态密度和电荷密度分布. 体系结合能和杂质偏聚能的计算结果表明: 难熔元素W优先占据Al格位. 此外,由于难熔元素W的4d轨道与近邻基体原子Ni的3d轨道和Al的3p轨道的杂化, 使得掺杂体系中难熔元素W与近邻基体原子间的相互作用能加强; 同时难熔元素W与位错芯区近邻基体原子间有较多的电荷聚集, 这表明W与近邻基体原子间形成了较强的化学键. 难熔元素W对NiAl化合物的能量及电子结构有较大的影响, 从而影响位错的运动及NiAl金属间化合物的性能. 关键词： 电子结构 位错 金属间化合物 杂质     

密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性（Ih、Oh、D5h、D3h）密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn）掺杂团簇的结构及磁性．结果表明：除Al12Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应．     

密度泛函理论研究混合团簇Al12X(X=Sc、Ti、V、Gr、Mn、Fe、Co、Ni、Cu、Zn)的结构和磁性

以四种13原子高对称性(Ih、Oh、D5h、D3h)密堆积结构为初始构型,通过不等价位原子替换,利用密度泛函理论系统研究了Al12 X(X=Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn)掺杂团簇的结构及磁性.结果表明:除Al12 Cr和Al12Fe以外,其它Al12X团簇的基态结构均以Ih替换结构为主,其中前3d元素(X=Sc、Ti、V、Mn)倾向于表面位置替换,而后3d元素(X=Co、Ni、Cu、Zn)则倾向于中心位置替换;Al12 Cr和Al12Fe团簇以Oh结构的表面替换为基态结构;对多数3d元素(X=Ti、V、Cr、Fe、Co、Zn)其掺杂团簇均出现明显的近能同分异构现象;相较纯Al13团簇掺杂团簇普遍体现出磁性增强效应.     

过渡族金属掺杂Al(111)表面对氢分子催化分解的影响

为了探求过渡金属催化剂对催化合成储氢材料NaAlH₄效果的影响, 本文采用第一性原理方法研究了多种金属原子取代Al (111)表面铝原子形成的合金表面对氢的催化分解的影响. 计算结果表明, Sc, V, Fe, Ti原子掺杂的表面对氢分子分解具有催化作用. H₂在对应的掺杂表面催化分解所需要的活化能分别为0.54 eV, 0.29 eV, 0.51 eV, 0.12 eV. H原子在Sc, V, Ti掺杂表面扩散需要的活化能分别为0.51 eV, 0.66 eV, 0.57 eV. 同时, 过渡金属掺杂在Al表面时倾向于分散分布, 增加掺杂表面的掺杂原子个数, 掺杂表面的催化效果体现为单个掺杂过渡金属原子的催化效果. 本研究将为金属掺杂Al (111)表面催化加氢合成NaAlH₄提供理论参考.     

微合金化元素对Fe-Al界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe/Al界面的能量学和电子结构,讨论了替位型掺杂的元素Zn、Mn、Ni在Fe/Al界面处的作用.结果表明:元素Zn、Mn、Ni都会优先替换界面处的Fe原子,使得界面结合能增加,体系更稳定,有利于界面的结合;跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明:掺杂后有利于跨界面的Fe-Al间成键,从而加强了Al层与Fe基体的结合,且结合强度由强到弱依次为:掺Zn>掺Mn>掺Ni;与实验比较吻合.最后对掺杂Zn的增韧机理加以解释.     

3d过渡金属元素掺杂Al12N12纳米线几何结构和电子性能的第一性原理研究

基于密度泛函理论的第一性原理计算方法,系统地研究了不同3d过渡金属元素(Sc、Ti、V、Cr、Mn、Fe、Co和Ni)掺杂Al₁₂N₁₂纳米线的几何结构、稳定性和电子结构.结果表明：所有掺杂体系均是热力学稳定的;掺杂Ni时体系保留了原有的非磁性间接带隙半导体特性;当掺杂其它原子(Sc、Ti、V、Cr、Mn、Fe、Co)时体系仍然保持为半导体,但带隙明显减小.掺杂过渡金属原子对于Al₁₂N₁₂纳米线的电子结构具有明显的调控作用,在能带调控和光电方面有潜在的应用前景.     

微合金化元素对Fe—A1界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe／A1界面的能量学和电子结构，讨论了替位型掺杂的元素Zn、Mn、Ni在Fe／A1界面处的作用．结果表明：元素Zn、Mn、Ni都会优先替换界面处的Fe原子，使得界面结合能增加，体系更稳定，有利于界面的结合；跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明：掺杂后有利于跨界面的Fe-Al间成键，从而加强了Al层与Fe基体的结合，且结合强度由强到弱依次为：掺Zn〉掺Mn〉掺Ni；与实验比较吻合．最后对掺杂Zn的增韧机理加以解释．     

Mg12O12纳米线掺杂3过渡金属元素的第一性原理计算研究

基于密度泛函第一性原理计算,系统研究了Mg12O12笼状团簇组装一维纳米线及其掺杂3d族元素体系的几何结构与电子结构。结果表明：Mg12O12团簇组装一维纳米线为非磁性半导体,带隙值为3.16 eV;掺杂Sc和V后,体系由半导体转变为金属;掺杂Ti、Cr、Mn、Fe、Co、Ni、Cu后体系仍然保持半导体特性、但带隙值明显减小,而掺杂Zn时带隙值变化不大;掺杂V、Cr、Mn、Fe、Co、Ni、Cu后纳米线具有磁性。     

3d过渡金属掺杂M_2@Si_(20)(M=Sc-Zn)团簇的密度泛函理论研究

利用密度泛函理论(DFT)研究3d过渡金属掺杂硅团簇的几何结构和稳定性,计算了绝热电子亲和能和垂直电离能,内嵌双金属间距,自旋磁矩等.结果表明内嵌的Sc、Ti、V、Mn金属二聚体和十二面体硅笼构成了稳定的富勒烯结构,随着d电子数目的增加其内嵌的富勒烯构型有部分畸变,总体而言Si_(20)团簇掺杂双金属后稳定性得到了提高.     

Mg12O12纳米线掺杂3d过渡金属元素的第一性原理计算研究

基于密度泛函第一性原理计算,系统研究了Mg₁₂O₁₂笼状团簇组装一维纳米线及其掺杂3d族元素体系的几何结构与电子结构.结果表明：Mg₁₂O₁₂团簇组装一维纳米线为非磁性半导体,带隙值为3.16 eV;掺杂Sc和V后,体系由半导体转变为金属;掺杂Ti、Cr、Mn、Fe、Co、Ni、Cu后体系仍然保持半导体特性、但带隙值明显减小,而掺杂Zn时带隙值变化不大;掺杂V、Cr、Mn、Fe、Co、Ni、Cu后纳米线具有磁性.     

Study on the oscillatory behaviour of the lattice parameter in ternary iron–nitrogen compounds

The structural properties of the XFe₃N (X=Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) cubic ternary iron based nitrides as well as the preferential occupation site of X in the structure were studied using Full Potential Linearized Augmented Plane Wave method, within the Density Functional Theory formalism, Wien2k code, the exchange-correlation potential described with the Perdew–Burke–Ernzerhof expression, based in the Local Spin Density Approximation and Generalized Gradient Approximation. According the calculations, the Sc, Co, Ni, Cu and Zn, atoms preferred the corner sites of the cubes, while Ti, V, Cr and Mn occupy the centre of the faces of the equilibrium structures. The equilibrium structure lattice parameters have an oscillatory behaviour with the atomic number of X, with decreasing amplitude as the atomic number of X increases. This trend do not correlated with the atomic radii of X.     

土壤重金属沿山地森林海拔梯度的分布特征

采用电感耦合等离子体发射光谱法与石墨炉原子吸收光谱法,研究了14种重金属(Fe,Al,Ti,Cu,Cr,Mn,V,Zn,Ni,Co,Pb,Se,Cd,As)沿山地森林海拔梯度的分布特征.结果表明海拔梯度对14种重金属中的6种重金属浓度(Fe,A1,Ti,V,Pb与As)有显著的影响,对其他八种重金属浓度(Cu,Cr,M...     

亚热带自然林与人工林土壤重金属含量的研究

重金属是危害森林生态健康主要污染物之一.采用电感耦合等离子体发射光谱法与石墨炉原子吸收光谱法,首次比较了亚热带人工林和自然林土壤中13种重金属元素(Fe,Al,Ti,Cr,Cu,Mn,V,Zn,Ni,Co,Pb,Se,Cd)的含量.结果表明自然林土壤中Fe,Al,Ti,Cu,Mn,V,Zn,Ni,Co,Pb,Se,Cd...     

All-electron relativistic calculation on Au5X (X = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) clusters

All-electron scalar relativistic calculations on Au₅X (X = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) clusters have been performed by using density functional theory with the generalized gradient approximation. Our calculation results indicate that all the lowest energy geometries of Au₅X clusters have planar structures; the doped X atoms prefer to occupy the fourfold coordination site. Except Au₅Fe, Au₅Co and Au₅Zn, for other clusters including pure Au₆ cluster, the HOMO are delocalized obviously with a contribution from all atoms in the cluster. On the contrary, the electron localization in Au₅Zn is very strong resulting in the least stability of this cluster. Au₅Cu cluster with six delocalized electrons being defined as magic number for two-dimensional system has the largest VIP and deepest HOMO energy level. With the substitution Au for X atoms, the metallicity of all Au₅X clusters is reinforced.     

偏振能量色散X射线荧光光谱法在土壤环境监测中的应用

以土壤和水系沉积物标准物质为校准样品,采用粉末样品压片制样.建立了偏振能量色散X射线荧光光谱仪测定土壤中As、Ba、Cu、Co、Cd、Cr、Mo、Mn、Ni、Pb、Sr、Ti、V、Zn、Rb、Sc、Bi、Si、Al、Fe、Ca、Mg、Na、K 24种元素的方法.该方法采用Al、CaF2、Fe、Zn、KBr、Al2O3、...     

Survey of intermediate band material candidates

A systematic ab initio study, using the local spin density approximation, of the electronic properties of Ga_xP_yM compounds, where M is a transition metal substituting Ga or P atoms in a GaP host semiconductor lattice is presented. This study is oriented towards the early identification of intermediate band materials of recent interest as new photovoltaic materials to exceed the efficiency of single gap and even tandems of two solar cells. M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn have been explored as transition metals and Sc, V, Cr, and Fe in Ga₃₂P₃₁M and Cr in Ga₃₁P₃₂M have exhibited the desired intermediate band.     

Structural and magnetic properties of Ti12M clusters (M=Sc to Zn)

The geometries, electronic, and magnetic properties of the 3d atom doped icosahedron (ICO) Ti₁₂M (M=Sc to Zn), where a dopant atom replaces either the centra l(Ti₁₂M^c) or surface (Ti₁₂M^s) Ti atom in ICO Ti₁₃ cluster, have been systematically investigated by using the density functional theory. The structures of all the optimized Ti₁₂M^c and Ti₁₂M^s clusters are distorted ICO. Sc, Ni, Cu, and Zn atoms prefer to displace surface Ti atom, V, Cr, Mn, and Fe atoms prefer to displace central Ti atom. The position of impurity atom depends on the strength of the interaction between the central atom and the surface atoms. As compared to the pure Ti₁₃ cluster, Ti₁₂M^c and Ti₁₂M^s (M=V, Fe, Co, and Ni) clusters are more stable, Ti₁₂M^c and Ti₁₂M^s (M=Sc, Cr, Mn, Cu, and Zn) are less stable. Both Ti₁₂Ni^s and Ti₁₂Ni^c are magic clusters, which originate from their electronic as well as geometric closed shells. Because the exchange interaction prevails over the crystal field in Ti₁₂M clusters, the valence electrons fill molecular orbitals in terms of Hund’s rule of maximum spin.     

Site preference and elastic properties of ternary alloying additions in B2 YAg alloys by first-principles calculations

First-principles calculations were preformed to study the site preference behavior and elastic properties of 3d (Ti–Cu) transition-metal elements in B2 ductility YAg alloy. In YAg, Ti is found to occupy the Y sublattice whereas V, Cr, Co, Fe, Ni and Cu tend to substitute for Ag sublattice. Due to the addition of 3d transition metals, the lattice parameters of YAg is decreased in the order: V<Cu<Cr<Ni<Co<Fe<Ti. The calculated elastic constants show that Cr, Fe, Co and Cu can improve the ductility of YAg alloy, and Fe is the most effective element to improve the ductility of YAg, while Ti, Ni and V alloying elements can reduce the ductility of YAg alloy, especially, V transforms ductile into brittle for YAg alloy. In addition, both V and Ni alloying elements can increase the hardness of YAg alloy, and Y₈Ag₇V is harder than Y₈Ag₇Ni.