ICP等离子体鞘层附近区域发光光谱特性分析

为了独立控制鞘层附近区域离子密度和离子能最分布,采用光发射谱(OES)测量技术,对不同射频功率、放电气压和基底偏压下感应耦合等离子体鞘层附近区域辉光特性进行了研究.原子谱线和离子谱线特性分析表明,在鞘层附近区域感应耦合等离子体具有较高的离子密度和较低的电子温度.改变放电气压和射频功率,对得到的光谱特性分析表明,鞘层附近区域离子密度随射频功率的增大而线性增大,在低压下随气压的升高而增大.低激发电位原子谱线强度增加迅速,高激发电位原子谱线强度增加缓慢,而离子谱线强度增加很不明显.改变基底直流偏压,对得到的发射光谱强度变化分析表明,谱线强度随基底正偏压的增加而增大.随着基底负偏压的加入,谱线强度先减小而后增大;直流偏压为-30 V时,光谱强度最弱.快速离子和电子是引起Ar激发和电离过程的主要能量来源.     

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.     

Modeling the pressure dependence of DC bias voltage in asymmetric,capacitive RF sheaths

A semianalytical model for capacitively coupled radio frequency (RF) sheaths of asymmetric (unequal electrode area) systems has been developed. It can be applied in the high-frequency (ω > ω _pi) regime at different pressures. An analytical approximation to the pressure-dependent ion density profile is used. The time-varying electric field and potential within the sheath are obtained by solving Poisson's equation. The current balance and zero net DC current conditions are applied to solve for the RF sheath parameters and DC bias voltage. The DC voltage ratio between the powered and grounded electrode sheaths increases as the pressure decreases, which results in a larger DC bias voltage at lower pressures     

Synthesis of well-aligned carbon nanotubes by inductively coupled plasma chemical vapor deposition

Uniform and well-aligned carbon nanotubes (CNTs) have been grown using a high density inductively coupled plasma chemical vapor deposition (ICP-CVD) system. A gas mixture of methane-hydrogen was used as the source and Ni as the catalyst for the CNT growth. The effect of process parameters, such as inductive RF power, DC bias voltage and CH₄/H₂ ratio, on the growth characteristics of CNTs was investigated. It was found that both plasma intensity and ion flux to the substrate, as controlled by the inductive RF power and DC bias voltage, respectively, can greatly affect the growth of CNTs. The relative importance of the generation of ions and the subsequent transport of ions to the substrate as serial process steps are considered as the two underlying factors in determining the growth characteristics of CNTs. PACS 81.05.Uw; 81.07.De; 81.15.Gh     

Comparison of excessive Balmer /spl alpha/ line broadening of inductively and capacitively coupled RF, microwave, and glow-discharge hydrogen plasmas with certain catalysts

From the width of the 656.3-nm Balmer /spl alpha/ line emitted from inductively and capacitively coupled radio frequency (RF), microwave, and glow-discharge plasmas, it was found that inductively coupled RF helium-hydrogen and argon-hydrogen plasmas showed extraordinary broadening corresponding to an average hydrogen atom energy of 250-310 and 180-230 eV, respectively, compared to 30-40 and 50-60 eV, respectively, for the corresponding capacitively coupled plasmas. Microwave helium-hydrogen and argon-hydrogen plasmas showed significant broadening corresponding to an average hydrogen atom energy of 180-210 and 110-130 eV, respectively. The corresponding results from the glow-discharge plasmas were 33-38 and 30-35 eV, respectively, compared to /spl ap/ 4 eV for plasmas of pure hydrogen, neon-hydrogen, and xenon-hydrogen maintained in any of the sources. Similarly, the average electron temperatures T/sub e/ for helium-hydrogen and argon-hydrogen inductively coupled RF and microwave plasmas were high (43 200 /spl plusmn/ 5% K, 18 600 /spl plusmn/ 5% K, 30 500 /spl plusmn/ 5% K, and 13 700 /spl plusmn/ 5% K, respectively); compared to 9300 /spl plusmn/ 5% K, 7300 /spl plusmn/ 5% K, 8000 /spl plusmn/ 5% K, and 6700 /spl plusmn/ 5% K for the corresponding plasmas of xenon-hydrogen and hydrogen alone, respectively. Stark broadening or acceleration of charged species due to high electric fields cannot explain the inductively coupled RF and microwave results since the electron density was low and no high field was present. Rather, a resonant energy transfer mechanism is proposed.     

Fundamental study towards a better understanding of low pressure radio-frequency plasmas for industrial applications

Two classic radio-frequency (RF) plasmas, i.e., the capacitively and the inductively coupled plasmas (CCP and ICP), are widely employed in material processing, e.g., etching and thin film deposition, etc. Since RF plasmas are usually operated in particular circumstances, e.g., low pressures (mTorr-Torr), high-frequency electric field (13.56 MHz-200 MHz), reactive feedstock gases, diverse reactor configurations, etc., a variety of physical phenomena, e.g., electron resonance heating, discharge mode transitions, striated structures, standing wave effects, etc., arise. These physical effects could significantly influence plasma-based material processing. Therefore, understanding the fundamental processes of RF plasma is not only of fundamental interest, but also of practical significance for the improvement of the performance of the plasma sources. In this article, we review the major progresses that have been achieved in the fundamental study on the RF plasmas, and the topics include 1) electron heating mechanism, 2) plasma operation mode, 3) pulse modulated plasma, and 4) electromagnetic effects. These topics cover the typical issues in RF plasma field, ranging from fundamental to application.     

射频等离子体鞘层动力学模型

在流体力学方程的基础上建立了一种自洽的无碰撞射频等离子体鞘层动力学模型.这种自洽性包含两个方面:一方面,由于考虑了瞬时鞘层电场对离子运动的影响,因此该模型适用于描述任意频率段的射频鞘层演化过程;另一方面,在模型中采用等效电路方法来自洽地确定极板上的瞬时电位与瞬时鞘层厚度之间的关系.采用数值方法模拟出鞘层的瞬时厚度及极板的瞬时电位变化、鞘层内离子密度和电场强度等物理量的时空变化.结果表明,当射频场的频率小于或等于离子等离子体频率时,离子流密度明显地随时间变化 关键词： 射频 离子 鞘层 流体力学     

Non-linear lumped model circuit of capacitively coupled plasmas at the intermediate radio-frequencies

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single and two separate RF voltage sources are considered. One of the driven frequencies (the higher frequency) has been adjusted to excite a plasma series resonance, while the second frequency (the lower frequency) is in the range of the ion plasma frequency. Increasing the plasma pressure in the low pressure regime ($\le 100\text{mTorr}$) is found to diminish the amplitude of the self-excited harmonics of the discharge current, however, the net result is enhancing the plasma heating. The modulation of the ion density with the lower driving frequency affect the plasma heating considerably. The net effect depends on the amplitude and the phase of the ion modulation.     

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基于感应耦合等离子体(ICP)技术设计了一套用于在硅基片上制作形成超浅结的等离子体浸没注入(PIII)系统。该ICP PIII系统工作腔室为圆柱形,采用射频功率源,注入偏压源为一脉冲直流电压源,系统与Langmiur探针相连。探针诊断结果表明,该系统的等离子体离子密度达到1017m-3,离子密度径向均匀性达到3.53%。硼和磷的超低能注入试验的二次离子质谱测试结果表明：掺杂离子注入深度在10nm左右,最浅的注入深度为8.6nm(在注入离子密度为1018cm-3时);注入离子剂量达到了1015cm-2以上;掺杂离子浓度峰值在表面以下;注入陡峭度达到了2.5nm/decade。     

Collisionless bounce resonance heating in dual-frequency capacitively coupled plasmas

We present the experimental evidence of the collisionless electron bounce resonance heating (BRH) in low-pressure dual-frequency capacitively coupled plasmas. In capacitively coupled plasmas at low pressures when the discharge frequency and gap satisfy a certain resonant condition, the high energy beamlike electrons can be generated by fast sheath expansion, and heated by the two sheaths coherently, thus the BRH occurs. By using a combined measurement of a floating double probe and optical emission spectroscopy, we demonstrate the effect of BRH on plasma properties, such as plasma density and light emission, especially in dual-frequency discharges.     

Particle simulation of radio-frequency plasma discharges of methanefor carbon film deposition

Particle-in-cell/Monte Carlo (PIC/MC) simulations of capacitively coupled radio-frequency (RF) glow discharges were carried out for low pressure CH₄ plasmas. The present computational scheme includes the motions and collisions of both neutral and charged particles. The CH₄ plasma is modeled by combining a one-dimensional PIC/MC method with a polyatomic particle collision scheme. The model considers the motions of CH₄, CH₄⁺, CH₃, C₂H₅, H₂, H, and electrons. Space and time dependent results show ionization rate is high at the sheath region. The dissociation rate of CH₄ is found to be high at the sheath as well as in the plasma bulk. Deposition rate of carbon film is calculated by sampling impinging particles at at the powered electrode. The calculations show that neutral radicals are the major depositing species for the cases studied. Ion energy impinging to the electrode was found to be strongly dependent on the “imposed” dc bias (as opposed to self-bias) voltage for a given RF voltage. Deposition rate was found to be almost independent of the “imposed” dc bias voltage as the RF voltage remained constant     

A Comparative Study of Single and Double Langmuir Probe Techniques for RF Plasma Characterization

In this study, the plasma density and electron temperature of Radio Frequency (RF) plasmas were determined by three types of Langmuir probes, namely a conventional double probe, a single probe with RF choke and a single probe with RF choke and compensating electrode. The same plasmas were characterized by the three probes, each performing three measurements per plasma condition, in order to determine the precision of the measurement results. After performing a comparative analysis, which looked at the precision and the accuracy of these results, the conclusion is that the double probe, which has already the advantage of the simplest construction, yields the most reliable results for both capacitively and inductively coupled RF plasmas. The single probe with RF choke and compensating electrode has a similar precision as the single probe without compensating electrode, but its accuracy is better.     

Application of weakly ionized plasmas for materials sampling andanalysis

The use of weakly ionized plasmas as spectroscopic sources for materials sampling and analysis is reviewed. Plasma sources currently used for this purpose include direct-current and alternating-current plasmas, inductively coupled plasmas, microwave-induced plasmas, surface-wave plasmas, capacitively coupled plasmas, capacitive microwave plasmas, glow discharges, flowing afterglows, theta pinch discharges, exploding films and wires, and laser-produced plasmas. The authors give a summary of relevant characteristics of some of the plasma sources. Included are the source, common method of application, approximate detection limit for that method, applicability for solid sampling, susceptibility to matrix effects, approximate cost, and the most common usage for the method     

Electrical characteristics of helicon wave plasmas

The external electrical characteristics of helicon wave plasmas have been studied over a wide range of magnetic fields, radio frequency (RF) power, frequencies, and Ar gas pressures. External parameters, such as antenna voltage, current, and phase shifts, and internal parameters, such as electron density, are measured. The equivalent discharge resistance, reactance, and power transfer efficiency are calculated through these measurements. The characteristics of helicon mode is compared with inductively coupled plasma (ICP) and low mode. The power efficiency of the helicon mode is better than that of other modes. Consequently, electron density of helicon mode is much higher than that of other modes. This means the existence of a mechanism where electrons are very efficiently accelerated by the electric field of the antenna in the helicon mode. The power efficiency of helicon mode is higher at lower RF frequency and at optimum gas pressure than that of other modes     

Sheath motion in a capacitively coupled radio frequency discharge

The sheath motion in a capacitively coupled RF discharge is highly nonlinear. The voltage waveform on a cylindrical probe placed in the sheath region is measured as a function of position and time. A circuit model of the probe-discharge system relates the observed probe voltage to the sheath motion. The equations derived from this circuit model are solved numerically with varying nonlinear sheath motions; the resulting waveforms are compared with the experimental observations to determine the actual sheath motion. The time-varying plasma potential is also determined, indirectly, from the comparison. The authors also report observation of oscillations related to the plasma frequency, whose peak harmonic component can be calculated from a single plasma model. These oscillations can be a useful plasma diagnostic for determining plasma density. The presence of these high-frequency oscillations may significantly enhance the rate of stochastic heating of electrons     

60MHz电容耦合等离子体中电子能量分布函数特性研究

甚高频(频率大于30 MHz)耦合放电源由于能产生大面积高密度的等离子体而受到了人们的广泛关注. 采用电流、电压探针以及朗缪尔探针诊断技术对60MHz射频激发产生的容性耦合等离子体的放电特性及电子行为进行了研究. 实验结果表明,等离子体的等效电阻/电容随着射频输入功率的增加而减小/增加;等离子体中电子行为不仅依赖于射频输入功率,还与放电气压密切相关;放电气压的增加导致电子能量概率分布函数(EEPF)从双温Maxwellian分布向Druyvesteyn分布转变,而且转变气压远低于文献所报道的数值,这主要是由于在60MHz容性耦合等离子体中电子反弹共振加热效率大为降低. 关键词： 甚高频容性耦合等离子体 朗缪尔探针诊断 电子加热模式     

ANALYSIS OF DUAL FREQUENCY CONFINED CAPACITIVELY COUPLED PLASMA AT LOW POWER

Confined dual frequency hydrogen plasma discharge has been investigated with microwave interferometer method and radial profiles are taken by Abel inversion technique. Dual radio-frequency sources, operating at 27.12MHz and 1.94MHz, are coupled to each other through the plasma. 27.12MHz RF power is used to enhance plasma density and 1.94MHz power is used to enhance ion acceleration energy to the electrode. Radial density profiles has been taken for comparing the effects of low frequency source that the secondary RF source causes reduction in plasma density due to the sheath expansion. Instead radial density profile is assumed as flat by most of the models, there is about 2.5eV of potential drop occurs from centre to boundary at 40W of primary source power. It has been observed that increasing sheath width (increasing the secondary source power to primary source power) reduces the bulk plasma volume and makes potential profile flattening in y direction. While the high frequency power is dissipated by electrons in the bulk plasma; low frequency power is mostly dissipated by ions in the sheath region. Using both high and low frequency power, we may control plasma density and ion acceleration energy to the electrode simultaneously.     

Characteristics of a dual‐radio‐frequency cylindrical inductively coupled plasma

The plasma parameters such as electron density, effective electron temperature, plasma potential, and uniformity are investigated in a new dual‐frequency cylindrical inductively coupled plasma (ICP) source operating at two frequencies (2 and 13.56 MHz) and two antennas (a two‐turn high‐frequency antenna and a six‐turn low‐frequency (LF) antenna). It is found that the electron density increases with 2 MHz power, whereas the electron temperature and plasma potential decrease with 2 MHz power at a fixed 13.56 MHz power. Moreover, the plasma uniformity can be improved by adjusting the LF power. These results indicate that a dual‐frequency synergistic discharge in a cylindrical ICP can produce a high‐density, low‐potential, low‐effective‐electron‐temperature, and uniform plasma.     

Excitation of the half-frequency of the input signal in theresponse of an antenna immersed in a plasma

The nonlinear response of a cylindrical monopole antenna immersed in a steady-state collisionless magnetic-field-free plasma and driven by a single-frequency RF source is investigated. The thickness of the ion sheath surrounding the antenna is controlled by a DC bias applied to the latter. It is found that at frequencies of the driving signal close to twice the frequency of a sheath wave resonance, the 1/2-subharmonic is excited, provided that the input power level is sufficiently high. The dependence of this process on the sheath thickness and on the electron plasma density is studied in the vicinity of several sheath wave resonances. This nonlinear effect is interpreted as a parametric excitation due to the periodic modulation of the sheath thickness, and hence its capacitance, by the applied RF signal. A similar effect can be obtained by replacing the antenna-sheath-plasma structure in the measuring circuit by a variable capacitance diode. A numerical analysis of the differential equation describing the current waveform in a microwave network modeling the antenna-sheath-plasma system is presented. It confirms the fact that a periodically modulated capacitance embedded in a linear circuit is responsible for the observed excitation of the half-frequency of the input signal     

Electrical characteristics of argon radio frequency glow dischargesin an asymmetric cell

Measurements of the current and voltage at both electrodes of a parallel-plate, capacitively coupled RF discharge cell (the Gaseous Electronics Conference Reference Cell) were combined with measurements of the voltage on a wire inserted into the glow region between the electrodes, for argon discharges at pressures of 1.3-133 Pa and peak-to-peak applied voltages ⩽400 V. Together, these measurements determined the RF voltage, current, impedance, and power of each sheath of the plasma. Simple power laws were found to describe changes in sheath impedances observed as voltage and pressure were varied. An equivalent circuit model for the electrical behavior of the discharge was obtained. The equivalent circuit model can be used to relate the electrical data to plasma properties such as electron densities, ion currents, and sheath widths. The results differ from models previously proposed for asymmetric RF discharges, and the implications of this disagreement are discussed