A numerical approach for analyzing quantum dot infrared photodetectors' parameters |
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Authors: | Hamed Dehdashti Jahromi Mohammad Hossein Sheikhi Mohammad Hasan Yousefi |
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Institution: | 1. Nano Technology Research Center, Electrical and Computer Engineering Department, Shiraz University, Shiraz, Iran;2. Applied Sciences Complex, Physics and Electro-Optical Engineering Department, Malek Ashtar University of Technology, Shahin Shahr, Iran |
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Abstract: | Quantum dot infrared photodetectors (QDIPs) have many advantages over other types of semiconductor-based photodetectors. However some of its characteristics have been investigated theoretically, there are many unstudied points. In this paper a new approach is presented to evaluate quantum dot infrared photodetectors dark current and photocurrent. In this study, it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of quantum dot detectors. Based on these assumptions, new formula for average number of electron in a quantum dot for both, dark and illumination condition is calculated, which is more accurate than the previous reported formulas; because in deriving previous reported formulas, it was assumed only thermionic emission determines dark current but field-assisted tunneling mechanisms has not been considered. Then numerical method is used to calculate the average number of electron in a quantum dot and to determine dark current and photocurrent. The theoretical results are compared with experimental data. They have good agreement with available experimental data. |
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