共查询到17条相似文献,搜索用时 588 毫秒
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在八个(111)面磁泡膜上,观察了施加面内(in-plane)磁场后在不同晶轴方向上条状畴的消失过程,测量了条畴消失场Hs*和磁畴消失场Hk*与面内磁场的方向的关系。本文计及立方磁晶各向异性,完善了面内磁场中条畴的稳定性理论。用该理论定性地解释了实验结果的主要特点。导出了Hs*与立方各向异性及面内场方向的两种近似的理论关系,它们分别适用于面内场方向靠近和不十分靠近〈110〉晶轴的情形。它们和实验结果是大致符合的。在〈110〉晶轴上,理论关系具有下列简单的形式:Hk*<110>=Hs*<110>=Hk{1+(k1/2Ku)-[al/h(4πMs/Hk)2]2/3},此式与实验结果符合得相当好。
关键词: 相似文献
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《物理》2017,(6)
在从1967-1992年连续25年研制固态磁存储器的故事中,中国没有缺席。1970年代初,中国科学院物理研究所磁学室磁泡组11个人从生长基片单晶,制备单晶磁泡薄膜和进行磁泡测量三方面开始磁泡材料的研制。当时文章作者负责测量,设计制作了磁泡测量装置。为了表征磁泡薄膜,发现了含有"一盘"软磁畴段的H图形,并找到了"脉冲偏磁场作用下硬磁泡的形成"的研究课题。这使作者在1980年代初经受住了磁泡下马的冲击,迎来了1983年布洛赫线存储器方案的提出,发觉已具有研究其机理的条件,最终成为该存储器的终结者,并在1991年国际J.Mag.Mag.Mater.杂志第100纪念卷中荣幸地为"China"占了一席之地。从1992年以来,时间又过去了25年,但活生生的磁泡总在,当年报废的磁泡测量装置已经更新。盼望大学生和刚入门的研究者喜欢这台能显示赏心悦目的磁泡畴运动,能生动阐述铁磁学物理基础的研究导向性的物理实验设备。 相似文献
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The effect of external magnetic field H normal to the anisotropy axis on the energy and configuration of vortexlike asymmetric magnetic walls in a magnetically uniaxial
film with an easy magnetic axis parallel to its surface is studied. The investigation is based on minimizing the energy functional
of the film with due regard to exchange energy, magnetic anisotropy energy, magnetostatic energy, and Zeeman energy. The range
of H below the anisotropy field is found where the asymmetric Néel wall is stable, unlike the case H = 0, when the asymmetric Bloch wall is stable. It is shown that an asymmetric Bloch wall becomes absolutely unstable and
reconfigures into an asymmetric Néel wall at some critical values of H = H
⊥. The dependences of critical field H
⊥ on the film thickness and saturation induction at different values of the anisotropy field are determined: field H
⊥ depends on the thickness nonlinearly and on the saturation induction nonmonotonically. 相似文献
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F. V. Lisovskii E. G. Mansvetova Ch. M. Pak 《Journal of Experimental and Theoretical Physics》1997,84(1):156-163
We study phase transitions induced by a static magnetic field in magnetically uniaxial films with a small positive anisotropy
constant. The phase diagram of these objects is determined in the H
∥-H
⊥ plane, where H
∥ and H
⊥ are, respectively, the components of the magnetizing field along and perpendicular to the surface normal. The stability boundary
is located for all of the main types of domain configurations observed: a simple stripe domain structure, a stripe domain
structure with periodic bending by surface distortions in the profile of the domain walls, and hexagonal lattices of cylindrical
magnetic bubbles.
Zh. éksp. Teor. Fiz. 111, 283–297 (January 1997) 相似文献
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V. Rodionova V. Zhukova M. Ilyn M. Ipatov N. Perov A. Zhukov 《Physica B: Condensed Matter》2012,407(9):1446-1449
We studied the domain wall (DW) dynamics of magnetically bistable amorphous glass-coated Fe74B13Si11C2 microwires. In according to our experimental results magnetic field dependences of DW velocity of studied microwires can be divided into two groups: with uniform or uniformly accelerated DW propagation along the microwire. Strong correlation between the type of the magnetic field dependence of domain wall velocity, v(H), and the distribution of the local nucleation fields has been observed.Moreover, we observed abrupt increasing of DW velocity (jump) on the magnetic field dependences of the domain wall velocity, v(H), for the both types of the v(H) dependences. At the same time usual linear increasing of the domain wall velocity with magnetic field persists below these jumps. It was found that the jump height correlates with the location of nucleation place of the new domain wall. We have measured local nucleation field distribution in all the microwires. From local nucleation field distribution we have obtained the DW nucleation locations and estimated the jump height 相似文献
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本文研究了Sm2(FeNiCoM)17合金(M为非磁性组元)的磁性。样品由六角结构无序型的2∶17主相及少量FeNi合金杂相组成。在六角结构的e轴方向(易磁化方向)观察到下述异常现象:低温(273K以下)时的磁化及反磁化曲线发生明显的跃变,跃变时相应的磁场Hr随温度下降而增大;磁滞迴线是蜂腰型的,温度愈低蜂腰愈明显;升温时磁化强度随温度变化(1.5K至居里点TC)的曲线上出现极大值,其相应的温度Tt随磁场增大而降低;降温时观察到了热磁滞后现象。但在基面(难磁化方向)上及Co含量增多(>18at%)时,样品却表现了正常的铁磁行为。本文提出用磁矩非共线结构排列的自旋再取向相变来解释上述异常现象,并给出自旋倒向所需越过的能垒高度U=9.2×10-15erg,用设想磁结构的模型得到的磁化强度的计算值与实验值也符合得较好。
关键词: 相似文献
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研究了晶场二级效应在PrF3晶体中的作用,发现该效应可使Pr3+离子的晶场单态与其他态混合,对PrF3晶体磁化率产生明显影响.进一步研究了晶体内的交换作用有效场,其形式为Hin=(1.9-0.02556T)×10-5M,在100—300 K的温度范围内,以此计算的PrF3晶体的倒数磁化率和Verdet常数的倒数与实验值符合较好.结果表明,在PrF3晶体中,晶场二级效应与离子间的交换作用都不能忽略.
关键词:
晶场二级效应
交换作用有效场
Verdet常数
3晶体')" href="#">PrF3晶体 相似文献
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The nonlinear and generally unsteady dynamics of domain walls with a vortex internal structure in a constant magnetic field H is investigated on the basis of the numerical solution of the Landau-Lifshitz equation for a 2D distribution of magnetization M in magnetic films with planar anisotropy taking into account exactly the main interaction, including the dipole-dipole interaction. It is shown that in addition to field H c (bifurcation field) above which the motion of a wall becomes unsteady and its internal structure experiences global dynamic changes, there exists a field H0 separating two steady motions of the wall with different structures. The data clarifying the physical origin of the nonlinear dynamic rearrangement of the wall structure are presented. New rearrangement mechanisms associated with the generation and attenuation of vortices as well as their tunneling through the central surface of the wall are established. The existence of subperiod oscillations of the wall velocity in a static field in addition to the oscillations associated with the precession of M around the easy magnetization axis is predicted. The period T of dynamic variations of the wall structure is studied, and an empirical formula is proposed for describing the singular behavior of the T(H) dependence near H=H Hc with the critical index depending on the film parameters. The bifurcation process is studied, and a nonlinear dependence of the critical field H c on the film thickness and the saturation magnetization is established. The possibility of direct experimental investigation of the dynamic rearrangement of the internal structure of the wall is indicated. 相似文献