Metal-on-oxide nanoparticles produced using laser ablation of microparticle aerosols

A continuous aerosol process has been studied for producing nanoparticles of oxides that were decorated with smaller metallic nanoparticles and are free of organic stabilizers. To produce the oxide carrier nanoparticles, an aerosol of 3–6 μm oxide particles was ablated using a pulsed excimer laser. The resulting oxide nanoparticle aerosol was then mixed with 1.5–2.0 μm metallic particles and this mixed aerosol was exposed to the laser for a second time. The metallic micron-sized particles were ablated during this second exposure, and the resulting nanoparticles deposited on the surface of the oxide nanoparticles producing an aerosol of 10–60 nm oxide nanoparticles that were decorated with smaller 1–5 nm metallic nanoparticles. The metal and oxide nanoparticle sizes were varied by changing the laser fluence and gas type in the aerosol. The flexibility of this approach was demonstrated by producing metal-decorated oxide nanoparticles using two oxides, SiO₂ and TiO₂, and two metals, Au and Ag.     

Nanoparticles in mesoporous films,a happy marriage for materials science

Mesoporous ordered materials, whose porosity is within the 2–50-nm range, are an ideal host for functional nanoparticles. Mesoporous thin films, in particular, offer a large variety of options for the fabrication of advanced materials and devices based on the host-guest combination of matrix nanoparticles. Nanocomposite mesoporous films embedding metal, oxide, and semiconductor nanoparticles have been prepared using as matrix oxides, mixed oxides, and organic-inorganic hybrids. The organization of the pores is an important peculiar property of mesoporous ordered films and allows producing nanocomposites whose nanoparticles follow a very specific array within the material. The main synthesis methods to obtain mesostructured films containing nanoparticles, together with their applications, are briefly introduced in the present review.     

Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotrees

Complex tree-like nanostructures with controlled morphology are becoming increasingly important for the development of nanoscale devices. The position of branches on III–V semiconductor nanotrees is determined by the distribution of Au seed particles. Here we report the dependence of the distribution of Au aerosol nanoparticles on nanowires on parameters including distance between wires, particle size, wire length, wire diameter, III–V material and particle charge. It was observed that different wire lengths and separation distances as well as different particle polarities have a significant effect on the resulting particle distribution while different wire diameters, particle diameters, materials and deposition voltages do not.     

Organisation of carbon nanotubes and semiconductor nanowires using lateral alumina templates

Carbon nanotubes and semiconductor nanowires have been thoroughly studied for the future replacement of silicon-based complementary metal oxide semiconductor (CMOS) devices and circuits. However, the organisation of these nanomaterials in dense transistor arrays, where each device is capable of delivering drive currents comparable with those of their silicon counterparts is still a big challenge. Here, we present a novel approach to the organisation of carbon nanotubes and semiconductor nanowires, based on the use of porous lateral alumina templates obtained by the controlled anodic oxidation of aluminium thin films. We discuss the growth of nanomaterials inside the pores of such templates and show the feasibility of our approach. Our first results point to further work on controlling the synthesis of catalyst nanoparticles at the bottom of the pores, these particles being necessary to nucleate and sustain the growth of carbon nanotubes or semiconductor nanowires. To cite this article: D. Pribat et al., C. R. Physique 10 (2009).     

Metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires

We report on the synthesis and the characterisation of metal/semiconductor hybrids consisting of self-assembled CdS nanoparticles on Cd nanowires, which are grown by thermal evaporation of the mixture of CdS and Cr. The growth of the hybrids is attributed to the decomposition of CdS at high temperature and the strain relieving that arises mainly from the lattice mismatch between Cd and CdS. Temperature dependence of zero-field resistance of single nanohybrid indicates that the as-produced Cd/CdS nanohybrid undergoes a metal--semiconductor transition as a natural consequence of hybrid from metallic Cd and semiconducting CdS. The metal/semiconductor hybrid property provides a promising basis for the development of novel nanoelectronic devices.     

纳米尺度下的局域场增强研究进展

金属纳米颗粒的等离激元共振引起的局域场增强效应,对显微成像、光谱学、半导体器件、非线性光学等诸多领域都具有极大的应用潜力。尤其是在光学纳米材料领域,通过亚波长金属纳米颗粒与电介质的组合引起局域场增强效应,提高了纳米材料的光学性能,并促进纳米材料在光学领域的应用。本文主要综述几种常见纳米结构所产生的局域场增强效应及其应用,详细介绍并总结了金属纳米材料的不同结构参数与局域场增强的关系及局域场增强在非线性光学、光谱学、半导体器件等领域的应用。未来,随着对金属纳米材料的研究愈发深入,局域场增强的应用将更加广泛,这将对诸多领域的发展产生重要影响。     

固体微/纳米尺度传热理论研究进展

随着半导体技术的飞速发展,器件的尺寸已进入到微/纳米尺度。由于量子效应、表面及界面效应,使得微尺度下的热物性与宏观尺度下有了明显的区别。人们针对微观传热领域的特点,发展了声子玻尔兹曼传输方程、分子动力学等方法,取得了一定的成果,但仍存在不少问题。一些基础概念问题,特别是非平衡态下的局域温度的定义,有待澄清。本文主要回顾近年来微/纳米尺度传热在理论和数值模拟方面的进展,以及目前所面临的挑战和问题。     

Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review

Schottky and Ohmic contacts are essential parts of electronic and optoelectronic devices based on semiconductor materials. Controlling the contact/semiconductor interface properties is the key to obtaining a contact with an optimum performance. Contacts incorporated by nanomaterials, i.e., nano-sized particles that are embedded at the interface of contact/semiconductor, can transform the conventional approaches of contact fabrication, resulting in more reproducible, tunable and efficient electronic, and optoelectronic devices. This article is a review of theoretical and fabrication progress on the last two decades to produce contacts with embedded nanoparticles (NPs). The review covers common routes of NPs deposition on different substrates (e.g., Si, Ge, SiC, GaN, GaAs₆₇P₃₃, and InP) for nanostructured contact fabrication and the theoretical models to investigate the NPs effects on the conduction mechanism and electrical properties of devices.     

III–V semiconductor interface properties as a knowledge basis for modern heterostructure devices

Some examples of interface studies are reported which show their close link with progress in III–V modern semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic vapor-phase epitaxy) are essential for the control of ordering phenomena in these layers, which is relevant for high-performance optoelectronic devices. Studies of electronic interface states at metal/narrow-gap III–V semiconductors are presented, which enabled the successful preparation of semiconductor/superconductor hybrid devices. For group-III nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky-barrier heights, band offsets and 2D confinement in heterostructure field-effect transistors. Received: 26 April 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method

Due to the enormous progress in computer technology and numerical methods that has been achieved over the past several decades, the use of numerical simulation methods in all scientific disciplines gain more and more importance. In the physics field, these methods have provided remarkable numerical solutions to problems considered analytically intractable. The solution of the Schrödinger equation in semiconductor heterostructures is a good example. However, many of these numerical schemes are cumbersome to implement for nonexperts in numerical computing. With this reason as motivation, a novel method simple enough to implement yet powerful enough to solve Schrödinger equation in semiconductor devices with high accuracy is presented herein.     

Electron photoemission in plasmonic nanoparticle arrays: analysis of collective resonances and embedding effects

We theoretically study the characteristics of photoelectron emission in plasmonic nanoparticle arrays. Nanoparticles are partially embedded in a semiconductor, forming Schottky barriers at metal/semiconductor interfaces through which photoelectrons can tunnel from the nanoparticle into the semiconductor; photodetection in the infrared range, where photon energies are below the semiconductor band gap (insufficient for band-to-band absorption in semiconductor), is therefore possible. The nanoparticles are arranged in a sparse rectangular lattice so that the wavelength of the lattice-induced Rayleigh anomalies can overlap the wavelength of the localized surface plasmon resonance of the individual particles, bringing about collective effects from the nanoparticle array. Using full-wave numerical simulations, we analyze the effects of lattice constant, embedding depth, and refractive index step between the semiconductor layer and an adjacent transparent conductive oxide layer. We show that the presence of refractive index mismatch between media surrounding the nanoparticles disrupts the formation of a narrow absorption peak associated with the Rayleigh anomaly, so the role of collective lattice effects in the formation of plasmonic resonance is diminished. We also show that 5–20 times increase of photoemission can be achieved on embedding of nanoparticles without taking into account dynamics of ballistic electrons. The results obtained can be used to increase efficiency of plasmon-based photodetectors and photovoltaic devices. The results may provide clues to designing an experiment where the contributions of surface and volume photoelectric effects to the overall photocurrent would be defined.     

Synthesis and optical properties of coated nanoparticle composites

The synthesis of coated nanoparticles is a new direction in engineering, specifically in the study of physical properties of materials. We examine semiconductor coated semiconductor particles, CdS/PbS, and metal coated particles, Au₂S/Au, and the theoretical basis for their unique properties. Coated self-assembled nanoparticles are also studied and recent progress is reported.     

Hybrid polymer-inorganic materials: multiscale hierarchy

The paper describes a new approach to producing hybrid composite materials with multiscale morphologies. We doped polymer submicrometer spheres with semiconductor or metal (CdS or Ag, respectively) nanoparticles and used these doped microspheres as the functional building blocks in production of hybrid periodically structured materials. The preparation of hybrid polymer particles included the following stages: (i) synthesis of monodisperse polymer microspheres, (ii) in situ synthesis of the inorganic nanoparticles either on the surface, or in the bulk of the polymer beads, and (iii) encapsulation of hybrid microspheres with a hydrophobic shell. We demonstrated that by changing the composition of the polymer beads good control could be achieved over the size of the nanoparticles.     

Electron waveguide devices

The discovery of electron waveguiding in one-dimensional (1D) semiconductor nanostructures has uncovered a new regime of electron transport with fascinating physics. The device potential of electron waveguides, however, remains largely unexplored. Over the last few years, our interuniversity team has been conducting research on the physics, technology and opportunities for device applications of split-gate AlGaAs/GaAs electron waveguides. We have examined electronic devices based on electron transport, tunneling and interference. Many problems have been identified in transport-type devices, but much more research is required before the engineering potential of tunneling and interference devices is understood. We have also investigated the potential of electron waveguides in photonic applications, with emphasis on far-infrared (or THz) photodetectors. Our research to date has revealed strong photon-induced currents in antenna-coupled electron waveguides that arise from quantum thermopower. Far-infrared photodetectors based on photon-induced quantum transport remain an interesting opportunity for the application of electron waveguides.     

Near-field-enhanced,off-resonant laser sintering of semiconductor particles for additive manufacturing of dispersed Au–ZnO-micro/nano hybrid structures

Off-resonant near-field enhancement by gold nanoparticles adsorbed on crystalline zinc oxide significantly increases the energy efficiency of infrared laser sintering. In detail, ten different gold mass loads on zinc oxide were exposed to 1,064 nm cw-laser radiation. Variation of scan speed, laser power, and spot size showed that the energy threshold required for sintering decreases and sintering process window widens compared to laser sintering of pure zinc oxide powder. Transmission electron microscope analysis after focused ion beam cross sectioning of the sintered particles reveals that supported gold nanoparticles homogenously resolidify in the sintered semiconductor matrix. The enhanced sintering process with ligand-free gold nanoparticles gives access to metal–semiconductor hybrid materials with potential application in light harvesting or energy conversion.     

过渡金属掺杂的扶手椅型氮化硼纳米带的磁电子学特性及力-磁耦合效应

基于密度泛函理论的第一性原理计算方法,研究了多种过渡金属(TM)掺杂扶手椅型氮化硼纳米带(ABNNR-TM)的结构特点、磁电子特性及力-磁耦合效应.计算的结合能及分子动力学模拟表明ABNNRTM的几何结构是较稳定的,同时发现对于不同的TM掺杂,ABNNRs能表现出丰富的磁电子学特性,可以是双极化磁性半导体、一般磁性半导体、无磁半导体或无磁金属.双极化磁性半导体是一种重要的稀磁半导体材料,它在巨磁阻器件和自旋整流器件上有重要的应用.此外,力-磁偶合效应研究表明:ABNNR-TM的磁电子学特性对应力作用十分敏感,能实现无磁金属、无磁半导体、磁金属、磁半导体、双极化磁性半导体、半金属等之间的相变.特别是呈现的宽带隙半金属对于发展自旋电子器件有重要意义.这些结果表明:可以通过力学方法来调控ABNNR-TM的磁电子学特性.     

Experimental evaluation of individual protection devices against different types of nanoaerosols: graphite,TiO<Subscript>2,</Subscript> and Pt

In this study different conventional individual protection devices, well-qualified for submicron particles were tested for different types of polydispersed nanoaerosols of TiO₂, Pt, and graphite. The electrical mobility diameters of the generated particles are ranging from 9 to 19 nm for Pt, 9 to 90 nm for TiO₂, and 15 to 90 nm for graphite. Toward this purpose, two specific test benches were used: one for the filter-based devices which are tested under a controlled air flow, and the other one for protective clothing and gloves under diffusion and without air flow. Different types of nanoaerosols, such as TiO₂, Pt, and graphite, were generated. Electrostatic and HEPA (High Efficiency Particle Air) filters have shown the highest efficiency for graphite nanoparticles. The main hypothesis for explaining this effect is that electrostatic forces could enhance the graphite nanoparticles capture. Air-tight fabrics made of non-woven textile seem much more efficient in protecting workers against Pt, and TiO₂ nanoparticles than cotton and polypropylene. With regard to protective clothing, no obvious effect linked to the aerosol type was observed. Gloves are found very efficient for TiO₂ and Pt nanoaerosols. Therefore, no effect of aerosol on the protection efficiency of gloves was evidenced.     

Synthesis and Application of Inorganic Nanoparticles as Lubricant Components – a Review

Recent achievements in chemistry and technology of nanosized inorganic particles provide possibility of synthesis in various metal oxides, chalcogenides, and so on. Surface modification of nanoparticles in some cases provides formation of their stable dispersions in liquid hydrocarbons. State of art in the field of inorganic nanoparticles’ synthesis and their application in tribology is discussed. Special attention is paid to synthesis of surface-capped and bare molybdenum sulfide nanoparticles and to testing thereof as friction-modifying additives for liquid lubricants. Differences in action mechanism of MoS_x nanoparticles and ‘molecular’ molybdenum complexes are discussed. Future trends of inorganic nanoparticles use as lubricant additives are suggested.     

Morphology and electronic structure of nanostructured carbon films embedding transition metal nanoparticles

Inclusions of metals in the growth process of carbon cluster assembled materials (ns-C) induce modifications in the structural and electronic properties of the material. A novel pulsed microplasma cluster source (PMCS) is able to deliver highly intense, collimated and stable beams suitable for producing bulk quantities of cluster-assembled nanocomposite films. Loading of metal nanoparticles into carbon cluster based films is obtained either by mixing a gas phase metallorganic compound with the carrier gas (He) before entering into the source (for example molybdenum (V) isopropoxide), or by using a double component sputtering target (metal (Ti, Ni)/graphite). The study of film morphology on nanometer scale, carried out by transmission electron microscopy (TEM), reveals the dispersion in a ns-C matrix of metallic particles and, in the case of molybdenum containing films, also of carbide particles. Spatially resolved ultraviolet photoemission spectroscopy confirms the segregation of metal particles and exhibits evident anisotropy in the Mo:ns-C films, mainly ascribable to the formation of carbide nanoparticles.     

Interaction dynamics of bright solitons in linearly coupled asymmetric systems

In this research work, composite media based on metamaterials including random distribution of spherical nanoparticles in a polymeric foam host are suggested to achieve negative effective refractive index in the visible spectrum. For this purpose structures including single, two and three layer spherical particles are investigated. Based on simulation results, media including single layer spheres (metallic and dielectric particles) and two layer nanospheres (core–shell particles consist of metallic core and dielectric shell) based on superposition of nanoparticles with different sizes and fill fractions are proposed for desired result. In this work, to obtain optimized band with negative RI media, superposition of three layer nanoparticles and doped semiconductor are designed.