La0.4FeCo3Sb12晶体结构的x射线和电子衍射表征

用粉末x射线衍射结合Rietveld解析方法和电子衍射研究了一种n型La0.4FeCo3Sb12化合物的晶体结构和演化.二元Skutterudite化合物的晶体结构中存在一半径为0.1980nm的结构间隙,可以填入稀土类原子,稀土原子填入后主要引起晶格中Sb原子位置的变化,稀土原子相对于其他原子具有较大的热振动参数.化合物的电子衍射花样具有体心立方晶系的消光规律,晶面的衍射强度与粉末x射线衍射的结果完全一致,有序结构引起了个别强衍射.斑点.     

Pr2(Fe0.8Co0.2)14B磁结构的中子衍射研究

本文报道用中子衍射测定的含硼稀土过渡族金属间化合物Pr₂(Fe_0.8Co_0.2)₁₄B的晶体结构与磁结构。将中子三轴谱仪用作二轴粉末衍射仪,在室温测该化合物粉末样品的中子衍射强度,用轮廓精化法弥合衍射数据。该化合物属Nd₂Fe₁₄B类四方结构,α=8.8110?,c=12.2307?。设Pr,Fe和Co原子磁矩间为铁磁耦合,同一晶位的Fe,Co原子磁矩相等,存在沿c轴的易磁化 关键词：     

La0.55Ca0.45MnO3的电子密度分布变温X射线衍射测量

运用X射线衍射(XRD)分析技术,对钙钛矿型La_0.55Ca_0.45MnO₃化合物的空间结构进行了变温测量,用Rietveld方法对XRD实验数据进行了精修拟合.随着温度的降低,实验上观测到衍射峰的劈裂,暗示该化合物内部晶体结构发生了相变.磁化曲线测量表明,对应晶体结构相变的温度,化合物的磁性也发生由铁磁性向反铁磁性的转变.运用Rietica软件对化合物的XRD数据进行了处理,得到了La_0.55Ca_{0.45< 关键词： 锰氧化物 相变 电子密度分布 磁结构}     

丝网印刷FeS2（pyrite）薄膜的结构及光电性能

采用丝网印刷方法制备了FeS₂(pyrite)薄膜，用x射线衍射确定了样品FeS₂(pyrite)薄 膜的 晶体结构，并用Rietveld方法对样品的结构进行了精修，确定了样品的点阵常数、键长、键 角、硫原子占位等结构参数.研究了膜厚对方块电阻、载流子浓度、霍尔迁移率、光能隙等 光电参数的影响. 关键词： 丝网印刷 薄膜 结构 Rietveld方法 光电性能     

NdNi2Ge2化合物的结构和电磁输运性质

利用非自耗真空电弧熔炼法制备了NdNi₂Ge₂化合物样品,采用X射线粉末衍射技术和Rietveld全谱拟合分析方法测定了其晶体结构. 结果显示该化合物的空间群为I4/mmm,点阵参数为:a=4.120(1),c=9.835(0),Z=2,Nd原子占据2a晶位,Ni原子占据4d晶位,Ge原子占据4e晶位. NdNi₂Ge₂化合物呈现顺磁性,应用居里-外斯定律拟合计算得到居里-外斯常数为25.8,居里-外斯温度为6.24 K. 有效势磁矩为3.69μ_B,这与理论计算Nd³⁺的磁矩相符,表明磁矩主要源于Nd³⁺. 电阻率变化范围为0.3 Ω ·μm^-1-1 Ω ·μm,电阻曲线拟合显示NdNi₂Ge₂呈半金属性. 关键词： 2Ge₂')" href="#">NdNi₂Ge₂ Rietveld结构精修 电磁输运     

非化学计量配比La0.67Sr0.33-x□xMnO3的结构和输运性质的研究

利用固相反应法制备了非化学计量配比的类钙钛矿锰氧化物La_0.67Sr_0.33-x□_xMnO₃(0<x≤0.33),研究了A位空位对材料的晶体结构和输运性质的影响.对粉末X射线衍射谱的Rietveld全谱拟合表明样品均为单相,在x=0到x=0.33空位浓度范围内晶体对称性没有发生变化,均具有三方对称性,空间群为R3c< 关键词： 非化学计量配比锰氧化物 Rietveld全谱拟合 结构分析 输运性质     

(Nd1－xGdx)3Fe27.31Ti1.69化合物的结构和磁性

通过X射线衍射和磁性测量等手段研究了(Nd_1-xGd_x)₃Fe_27.31Ti_1.69(0≤x≤0.6)化合物的结构和磁性.X射线衍射测量结果表明Gd替代后并未改变Nd₃(Fe,Ti)₂₉化合物的晶体结构，但引起了晶胞体积收缩.随着Gd含量的增加，化合物的居里温度T_C和室温磁晶各向异性场B_a单调增加，而自旋重取向 关键词： 1-xGd_x)₃Fe_27.31Ti_1.69化合物')" href="#">(Nd_1-xGd_x)₃Fe_27.31Ti_1.69化合物 磁晶各向异性 自旋重取向 磁相图     

R2Fe17-xAlx化合物中R-T交换耦合常量的计算

讨论了利用分子场近似结合中子衍射或X射线衍射的实验结果计算R₂Fe₁₇型稀土过渡族化合物中稀土磁矩与过渡族磁矩之间交换耦合常量的方法,并据此计算了R₂Fe_17-xAl_x(R=Tb,Dy,Ho,Er,Gd,x=7或8)化合物中稀土磁矩与过渡族磁矩之间的交换耦合常量.计算结果与实验值符合较好. 关键词： 2Fe_17-xAl_x化合物')" href="#">R₂Fe_17-xAl_x化合物 交换耦合常量     

激光分子束外延BaTiO3薄膜最顶层表面原子平面与薄膜生长机理

用激光分子束外延技术在SrTiO₃(001)衬底上外延生长了高质量的BaTiO_{3< /sub>薄膜,薄膜的生长过程由反射式高能电子衍射仪(RHEED)原位实时监测,表明薄膜具有 二维层状生长模式.薄膜的晶体结构和表面形貌分别由X射线衍射和原子力显微镜表征,显示 该薄膜为完全c轴取向四方相晶体结构,其表面具有原子尺度光滑性.采用角分辨X射线光电 子谱技术(ARXPS),研究了BaTiO3薄膜表面最顶层原子种类和排列状况.结果表 明,BaTiO3 关键词： 激光分子束外延 3薄膜')" href="#">氧化物BaTiO3薄膜 最顶层表面 角分辨X射线光电子谱}     

熵调控的Gd2Co17金属间化合物的结构与室温磁性能

熵调控材料因其独特的设计理念和优于传统合金的性能而受到广泛关注.本文将熵调控的设计理念引入金属间化合物中,设计并通过真空电弧熔炼的方法制备了一系列熵调控的Gd₂Co₁₇金属间化合物,期望通过熵调控的方法来稳定其结构,改善其磁性能.应用热力学理论预言熵调控的Gd₂Co₁₇系列金属间化合物具有稳定的单相,其单相性被X射线衍射实验所证实.通过组态熵调控原子尺寸因素,获得了菱方和六方两种晶体结构.熵调控改善了Gd₂Co₁₇系列金属间化合物的室温磁性能,过渡族金属位的熵调控使磁各向异性发生由基面到易轴的转变,稀土位的熵调控有助于提高其矫顽力,所有熵调控样品室温时的饱和磁矩均比二元Gd₂Co₁₇显著提升,可能是稀土或过渡族金属子晶格磁矩无序取向削弱了金属间化合物中稀土的4f电子与过渡族金属的3d电子磁矩之间的反平行交换作用所导致.磁价模型研究表明:熵调控设计导致Gd₂Co₁₇系列金...     

La,Ce,Nd掺杂对单层MoS_2电子结构的影响

为了研究稀土掺杂对单层MoS2电子结构的影响,文章基于密度泛函理论框架下的第一性原理,采用平面波赝势方法分别计算了本征及La,Ce,Nd掺杂单层MoS2的晶格参数、能带结构、态密度和差分电荷密度.计算发现,稀土掺杂所引起的晶格畸变与杂质原子的共价半径大小有关,La杂质附近的键长变化最大,Nd杂质附近的键长变化最小.能带结构分析表明,La掺杂可以在MoS2的禁带中引入3个能级,Ce掺杂可以形成6个新能级,Nd掺杂可以形成4个能级,并对杂质能级属性进行了初步分析.差分电荷密度分布显示,稀土掺杂可以使单层MoS2中的电子分布发生改变,尤其是f电子的存在会使差分电荷密度呈现出反差极大的物理图象.     

高压下Al0.77Mn0.19Yb0.04合金准晶T相形成及结构

 利用静高压（4.2 GPa）熔态（1 300 ℃）淬火（10² ℃/s）方法，对含稀土的铝锰合金Al_0.77Mn_0.19Yb_0.04进行了研究。首次发现了准晶T相得形成。利用选区透射电子衍射技术，对合金中准静态的结构对称性进行了观察和分析。根据X射线和电子衍射对其衍射峰进行了指标化。使用扫描电镜和能谱技术进行了成份分析。     

He原子掺杂铝材料的第一性原理研究

采用基于第一性原理的平面波超软赝势方法,结合广义梯度近似(GGA),计算了铝及铝晶胞间隙位置掺入He原子后体系的几何结构、电子结构、总体能量和电荷布居值.计算结果表明:随着氦在金属铝中逐渐形成,铝晶胞体系会发生晶格畸变,但总的趋势是He在铝体系的八面体位置的晶格畸变小于其在四面体位置的晶格畸变.He在铝晶胞八面体和四面体间隙的杂质形成能分别为1.3367 eV和2.4411 eV.由此可知,He在铝晶胞中最稳定位置是八面体间隙位置.同时,文中还从原子尺度层面分析了He原子在铝晶胞中的占位及其键合性质,讨论 关键词： 铝材料 第一性原理 形成能     

Ab initio study of electronic structures of BaMoO4 crystals containing an interstitial oxygen atom

The electronic structures of the perfect BaMoO₄ and BaMoO₄ crystals containing an interstitial oxygen atom situated at an appropriate position with the total energy being the lowest are studied within the framework of the density functional theory with the lattice structure optimized. The calculated results reveal that the interstitial oxygen atom situated at two different interstitial sites would combine with formal lattice oxygen ions forming molecular ions in two different ways, and the interstitial oxygen atom would cause visible range absorption band peaked at about 320 nm.     

Novel sb induced reconstruction of the (113) surface of ge

Sb induces on Ge(113) a c(2 x 2) reconstruction in which Sb breaks one Ge-Ge bond and occupies an interstitial site, in contrast to Sb adsorption on other Si or Ge surfaces. Sb saturates the three dangling bonds per unit cell of the (113) surface inducing a large strain which is released by occupation of the interstitial site. Two neighboring Sb at interstitial sites form a dimer. The structure has been determined by x-ray diffraction, applying direct methods, and ab initio density-functional-theory calculations. The adsorption geometry and the high binding energy lead one to expect that Sb cannot be used as a surfactant for the growth of Si/Ge layers on the (113) surface.     

Polarised neutron diffraction study of Mn1.09Sb

In order to study the influence of interstitial site occupancy on the electronic structure of MnSb, a polarised neutron diffraction experiment was performed on Mn_1.09Sb. The composition of the sample was obtained from the refinement of single crystal neutron diffraction data. The polarised neutron diffraction experiment yielded unpaired electron populations of the levels a^t_1g, e_g^t and e_g as follows: μ_x0 = 0.57 μ_B, μ_x± = 1.60 μ_B, μ_u± = 1.28μ_B. The comparison of these numbers with results of Yamaguchi et al shows that the spin density for this composition is reduced for the low energy level a^t_1g. This finding is interpreted by an occupation of minority spin states by electrons of the interstitial Mn atoms. In agreement with this, increasing Mn excess leads to a decreasing magnetic moment magnitude/Mn-atom and to a contraction of the lattice parameter c, indicating the strengthening of the Mn-Mn bond in [001].     

Structure and superconductivity of HgBa2CuO4+δ

We have used neutron powder diffraction to investigate the defect structure of HgBa₂CuO_4+δ. An interstitial oxygen defect in the Hg plane is the primary doping mechanism. A superconducting transition temperature, T_{c onset}, of 95 K is achieved when ≈0.06 oxygen atoms per formula unit are incorporated at this site by annealing the sample at 500°C in pure oxygen. Annealing in argon at 500°C lowers the oxygen content in this site to ≈0.01 and results in a T_c of 59 K. The neutron powder diffraction data give evidence for a second defect in the Hg plane which we conclude involves the substitution of copper for about 8% of the mercury and the incorporation of additional oxygen (≈0.1 atoms per formula unit), presumably bonded to the copper defects. In the present samples, the concentration of this defect does not vary with synthesis conditions and its contribution to doping is, therefore, unclear. The structure of the compound is the same at room temperature and superconducting temperatures.     

Crystal chemistry of layered carbide, Ti3(Si0.43Ge0.57)C2

 The crystal structure of a layered ternary carbide, Ti₃(Si_0.43Ge_0.57)C₂, was studied with single-crystal X-ray diffraction. The compound has a hexagonal symmetry with space group P6₃/mmc and unit-cell parameters a=3.0823(1) Å, c=17.7702(6) Å, and V=146.21(1) Å³. The Si and Ge atoms in the structure occupy the same crystallographic site surrounded by six Ti atoms at an average distance of 2.7219 Å, and the C atoms are octahedrally coordinated by two types of symmetrically distinct Ti atoms, with an average C-Ti distance of 2.1429 Å. The atomic displacement parameters for C and Ti are relatively isotropic, whereas those for A (=0.43Si+0.57Ge) are appreciably anisotropic, with U₁₁ (=U₂₂) being about three times greater than U₃₃. Compared to Ti₃SiC₂, the substitution of Ge for Si results in an increase in both A-Ti and C-Ti bond distances. An electron density analysis based on the refined structure shows that each A atom is bonded to 6Ti atoms as well as to its 6 nearest neighbor A site atoms, whether the site is occupied by Si or Ge, suggesting that these bond paths may be significantly involved with electron transport properties.     

MAGNETIC PROPERTIES OF NEW SERIES R-Mo-Fe NITRIDES WITH THE ThMn12-TYPE STRUCTURE AT A LOWER Mo CONTENT

A systematic study has been made on formation condition, crystallographic structure and magnetic properties of RMo_1.5Fe_10.5N_x, where R=Y, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er. The interstitial nitrogen atom effects on Curie temperature, saturation magnetization and magneto-crystalline anisotropy have been investigated. Two important preliminary results have been obtained. (1) A single phase crystallized in the ThMn₁₂-type structure was stabilized with a smaller content of molybdenum, thus, the compounds possess a higher Curie temperature and a larger spontaneous magnetization. (2) A complete system of compounds with 1:12 type structure containing the light rare earth cerium and praseodymium was synthesized, which will be favorable for developing new rare earth hard magnetic materials.     

P掺杂锐钛矿相TiO2的第一性原理计算

利用基于密度泛函理论的第一性原理对不同P掺杂形式(P替位Ti, P替位O, 间隙P)的锐钛矿相TiO₂的晶格常数、电荷布居、能带结构、分态密度和吸收光谱进行了计算. 结果表明, P替位Ti时, TiO₂体积减小, P替位O和间隙P的存在使TiO₂的体积膨胀; 替位Ti的P和间隙P均有不同程度的氧化, 而替位O的P带有负电荷. 三种P掺杂形式均导致锐钛矿相TiO₂禁带宽度的增大, 并在TiO₂禁带之内引入了掺杂局域能级. P掺杂导致TiO₂禁带宽度增大的程度依次为: 间隙P>P替位Ti>P替位O. 吸收光谱的计算结果表明, P替位Ti并不能增强TiO₂的可见光吸收能力, 但间隙P的存在大幅提高了TiO₂的可见光光吸收能力, 间隙P有可能是造成实验上P掺杂增强锐钛矿相TiO₂光催化活性的重要原因. 关键词： P掺杂 2')" href="#">锐钛矿相TiO₂ 第一性原理