具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析（英）

薄膜体声波谐振器(FBAR)的谐振频率会受到外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo三层结构的FBAR进行了温度-频率漂移特性的仿真,得到其在［－50 ℃, 150 ℃］温度范围内的频率温度系数(TCF)约为－3510－6/℃。在FBAR叠层薄膜结构中添加了一层具有正温度系数的二氧化硅温度补偿层,分析了该补偿层厚度对FBAR的温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计了具有一层二氧化硅温度补偿层的FBAR叠层,由Mo/AlN/SiO2/Mo多层薄膜构成,仿真得到其频率温度系数为0.87210－6/℃;与没有温度补偿层的FBAR相比,温度稳定性得以显著改善。关键词: Abstract: Key words:     

具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析(英文)

薄膜体声波谐振器(FBAR)的谐振频率会受到外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo三层结构的FBAR进行了温度-频率漂移特性的仿真,得到其在[-50℃,150℃]温度范围内的频率温度系数(TCF)约为-35×10-6/℃。在FBAR叠层薄膜结构中添加了一层具有正温度系数的二氧化硅温度补偿层,分析了该补偿层厚度对FBAR的温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计了具有一层二氧化硅温度补偿层的FBAR叠层,由Mo/AlN/SiO2/Mo多层薄膜构成,仿真得到其频率温度系数为0.872×10-6/℃;与没有温度补偿层的FBAR相比,温度稳定性得以显著改善。     

薄膜体声波谐振器性能模型参数的提取方法北大核心CSCD

薄膜体声波谐振器(FBAR)性能模型包含两个关系式:一个是FBAR有效机电耦合系数与其形状因子(面积与周长之比)的关系式,另一个是FBAR品质因数与其形状因子的关系式。前一个关系式中的参数为FBAR边缘区域的等效宽度,后一个关系式中的参数为表征FBAR横向声能泄漏的因子。为使性能模型用于不同膜层结构、材料及制备工艺的FBAR,建立FBAR性能模型参数的提取流程。以一种5层复合结构的FBAR为例,在同一晶片上,制备多个不同形状因子的FBAR。针对其中一个五边形FBAR,在ADS软件中通过Mason电路模型仿真得到其性能值(有效机电耦合系数和品质因数);再使用矢量网络分析仪和射频探针台实测其性能值。将仿真与实测得到的性能值代入FBAR性能模型,解算出这两个参数。确定参数之后,使用FBAR性能模型预测同一晶片上其它不同性能因子FBAR的有效机电耦合系数和品质因数,预测值的相对误差在3%之内,验证了该参数提取流程的有效性。     

高次谐波体声波谐振器谐振频率分布研究

基于由谐振频率分布提取压电薄膜参数的方法,研究影响高次谐波体声波谐振器(HBAR)谐振频率分布的因素。对多种HBAR进行模拟计算,模拟结果显示,变化基片对薄膜的声阻抗比值会引起并联谐振频率间隔的分布和有效机电耦合系数的分布改变;当薄膜的基模在高频时,改变电极对薄膜的声阻抗比值和电极厚度会引起谐振频率分布改变。这些结果表明,通过调整影响谐振频率分布的因素能使谐振频率变化,进而得到在特定的频率上产生谐振。     

品质因数对薄膜体声波谐振器振荡器频率稳定度的影响北大核心CSCD

在薄膜体声波谐振器(FBAR)振荡器中,振荡器的有载品质因数(QL)和FBAR的品质因数(Q值)均与振荡器的频率稳定度有关。为了研究这两种品质因数对FBAR振荡器频率稳定度的影响,在COMSOL Multiphysics软件中建立了FBAR的多物理场模型,通过频域仿真和MBVD(Modified Butterworth-Van Dyke)模型参数拟合,得到了MBVD模型参数,并在ADS软件中建立了MBVD模型电路,通过S参数仿真结合求取Q值的Bode法得到了不同损耗对应的Q值;再建立基于Pierce架构的振荡器,通过谐波平衡仿真得到了相位噪声,通过分别改变QL和Q得到了二者对FBAR振荡器频率稳定度的影响。结果表明:频率稳定度随QL和Q的增大而增大,Q值随不同损耗的增大而减小。当FBAR的Q值低于338时,即使通过增大QL来提高频率稳定度,其效果也不佳,以此FBAR构成的振荡器将不能满足作为无线通信射频前端参考信号源或者FBAR传感器读出电路的要求。为FBAR参考信号源和FBAR传感器读出电路的设计提供了一定的参考。     

高次谐波体声波谐振器的有效机电耦合系数

高次谐波体声波谐振器HBAR (High-overtone Bulk Acoustic Resonator)由基底、压电薄膜和上下电极组成,系统地研究了它们的结构参数(厚度)和性能参数(特性阻抗)对HBAR的重要性能参数有效机电耦合系数K_eff2的影响。在谐振频率附近,通过将HBAR的分布参数等效电路简化为集总参数等效电路得到了它们之间的关系表达式,分析了K_eff2在所关心频率最近谐振点的变化情况。结果表明,保持压电薄膜厚度不变,连续增加基底厚度,K_eff2呈振荡(非单调)下降,当基底厚度达到一定值时K_eff2与厚度成反比下降;保持基底厚度不变,连续增加压电薄膜厚度,K_eff2的峰值随基底和压电层的特性阻抗之比增加快速下降,到达极小值后缓慢增加;选择低阻抗的熔融石英作为基底可以获得较大的K_eff2;与Al电极相比,Au电极选择适当厚度可以获得较高的K_eff2。上述揭示的一些规律为HBAR的优化设计提供了理论依据。      

薄膜体声波谐振器的伽马辐照敏感机理分析

实验证明薄膜体声波谐振器(FBAR)用于检测伽马辐照是可行的,但未对敏感机理进行深入研究。针对这一问题,根据两种不同的FBAR结构,提出了不同机理来解释FBAR在伽马辐照下谐振频率偏移的原因。其中结构一FBAR为四层叠层结构（金属层-压电层-氧化层-金属层）,伽马辐照之后,会在辐照敏感层(氧化层)形成一个电压,相当于给压电层施加了一个直流电压,从而使谐振频率发生偏移;结构二与结构一不同的是,结构二FBAR在氧化层和压电层之间有一半导体层,辐照之后在氧化层中形成的电压改变了半导体的表面势,使半导体空间电荷层电容发生改变,从而改变谐振频率。通过仿真得到两种不同机理的结果,并与相关文献的测试结果对比,发现频率偏移的趋势和频率偏移量的数量级是相同的,因此提出来的两种机理是可行的。     

薄膜体声波谐振器的力敏特性研究

薄膜体声波谐振器(FBAR)力传感器作为一种新型的谐振式传感器,力敏特性是其设计原理。以FBAR微加速度计为例研究了工作在纵波模式,采用具有纤锌矿结构的AlN作为压电薄膜的FBAR,施加应力载荷后,其弹性常数改变导致FBAR谐振频率偏移的力敏特性。首先,采用有限元(FEA)静力学仿真,得到惯性力载荷作用下集成在硅微悬臂梁上的压电薄膜的应力分布;选取最大应力值作为载荷,基于第一性原理计算纤锌矿AlN的弹性系数与应力的关系式,预测惯性力载荷作用下AlN弹性系数的最大变化量。其次,采用谐响应分析,对比空载和不同惯性力载荷作用下FBAR微加速度计的谐振频率和偏移特性,预测FBAR微加速度计的加速度-谐振频率偏移特性。最后仿真分析得到:惯性力载荷作用下,FBAR微加速度计的谐振频率向高频偏移,灵敏度约为数kHz/g;其加速度增量-谐振频率偏移特性曲线具有良好的线性度。     

薄膜体声波谐振器的力敏特性研究（英文）

薄膜体声波谐振器(FBAR)力传感器作为一种新型的谐振式传感器,力敏特性是其设计原理。以FBAR微加速度计为例研究了工作在纵波模式,采用具有纤锌矿结构的AlN作为压电薄膜的FBAR,施加应力载荷后,其弹性常数改变导致FBAR谐振频率偏移的力敏特性。首先,采用有限元(FEA)静力学仿真,得到惯性力载荷作用下集成在硅微悬臂梁上的压电薄膜的应力分布;选取最大应力值作为载荷,基于第一性原理计算纤锌矿AlN的弹性系数与应力的关系式,预测惯性力载荷作用下AlN弹性系数的最大变化量。其次,采用谐响应分析,对比空载和不同惯性力载荷作用下FBAR微加速度计的谐振频率和偏移特性,预测FBAR微加速度计的加速度-谐振频率偏移特性。最后仿真分析得到:惯性力载荷作用下,FBAR微加速度计的谐振频率向高频偏移,灵敏度约为数kHz/g;其加速度增量-谐振频率偏移特性曲线具有良好的线性度。     

复合圆环弯曲振动四极子模态分析

针对压电圆环弯曲振动机电转换性能较差的问题,提出了一种复合圆环弯曲振动换能器,它由一个径向极化的压电陶瓷内圆环和一个金属外圆环复合而成。基于能量原理推导得到了复合圆环弯曲振动的谐振频率和有效机电耦合系数,探讨了弯曲振动四极子模态特性与其结构尺寸间的关系。当压电圆环尺寸不变时,随外侧金属圆环壁厚增加,复合圆环弯曲振动四极子模态谐振频率上升,有效机电耦合系数迅速上升到极大值后缓慢下降。最后,设计制作了圆环换能器并对其谐振频率和有效机电耦合系数进行了实验测试,测试结果与解析结果和数值模拟结果吻合得较好。      

Tunable Ba_0.5 Sr_0.5 TiO₃ film bulk acoustic resonators using SiO₂ /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Fabrication and Frequency Response Characteristics of AlN-Based Solidly Mounted Resonator

Film bulk acoustic resonator (FBAR) with solidly mounted resonator (SMR)-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy (AFM) analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53GHz, with their quality factors 134.2 and 97.6, respectively.     

ZnO-based film bulk acoustic resonator devices on a specially designed Bragg reflector

In this paper, we studied ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multilayered Bragg reflector part. Very thin chromium adhesion layers (0.03 μm thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the FBAR device. At the operating frequency of ∼2.7 GHz, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient.     

Effects of electrodes on performance figures of thin film bulk acoustic resonators

The effects of mechanical losses and elastic properties of the electrodes on the performance figures of a thin film bulk acoustic resonator (FBAR) are analyzed by numerical simulation. Results indicate that the material loss of the electrode has no visible effect on the characterization of the effective electromechanical coupling factor, k(eff)2. The acoustic impedance ratio of the electrode to the piezo-film dominantly determines the behaviors of the k(eff)2 variation with the electrode thickness. The resonance Q value, Q(s), of the FBAR closely relies on the material Q values of film and of electrodes as expected. Besides, the variation of Q(s) versus the thickness of the electrodes crucially depends on the acoustic impedance ratio as well. Especially, three characteristic parameters, i.e., the maximum value of k(eff)2, the sectional mass ratio of the electrode to the piezo film corresponding to the maximum k(eff)2, and the tolerance range of the ratio to keep k(eff)2 near the maximum, are calculated for some typical samples. These results would be useful for optimizing FBAR designs and performances.     

Tunable Ba0.5Sr0.5TiO3 film bulk acoustic resonators using SiO2/Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators（FBARs） based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3（BST） films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias（ 45 V） while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum（Mo） as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Fabrication and analysis of ZnO thin film bulk acoustic resonators

This study employs RF magnetron sputter technique to deposit high C-axis preferred orientation ZnO thin film on silicon substrate, which is then used as the piezoelectric thin film for a thin film bulk acoustic resonator (FBAR). Electrical properties of the FBAR component were investigated by sputtering a ZnO thin film on various bottom electrode materials, as well as varying sputter power, sputter pressure, substrate temperature, argon and oxygen flow rate ratio, so that structural parameters of each layer were changed. The experimental results show that when sputter power is 200 W, sputter pressure is 10 mTorr, substrate temperature is 300 °C, and argon to oxygen ratio is 4:6, the ZnO thin film has high C-axis preferred orientation. The FBAR component made in this experiment show that different bottom electrode materials have great impact on components. In the experiment, the Pt bottom electrode resonant frequency was clearly lower than the Mo bottom electrode resonant frequency, because Pt has higher mass density and lower acoustic wave rate. The component resonant frequency will decrease as ZnO thin film thickness increases; when top electrode thickness is higher, its resonant frequency also drops, due to top electrode mass loading effect and increased acoustic wave path. Therefore, ZnO thin film and top/bottom electrode thickness can be fine-tuned according to the required resonant frequency.     

Characteristics of backing impacts on the performance of the thickness mode piezoelectric transducer

The impacts of the thickness, the specific acoustic impedance and the mechanical loss factor of the backing on the performance of the thickness mode piezoelectric transducer are systemically studied, which are focused on the effective electromechanical coupling coefficient and the mechanical quality factor near the center frequency. The results show that with contin?uous increasing of the backing thickness, the effective electromechanical coupling coefficient and the mechanical quality factor are found rapidly declined by oscillation way. With the increase of the difference value of the acoustic impedance between the backing material and the piezoelec?tric material, the effective electromechanical coupling coefficient deceases and the mechanical quality factor increases. Under condition that the thickness of the piezoelectric material is fixed, the effective electromechanical coupling coefficient is found declined with the increase of the mechanical loss factor by monotonous way. The mechanical quality factor has minimum value and the electric characteristic curve tends to be smooth in a given frequency range. The equivalent circuit theory result is in good agreement with the ones by finite element method and the experimental results. The work mentioned above provides a theoretical guidance for the design and experimental fabrication of the thickness mode piezoelectric transducer.     

背衬参数对厚度模压电换能器特性的影响

系统研究了厚度模压电换能器的背衬厚度、声阻抗率及机械损耗因子对换能器振动性能影响,重点分析了在所关心频率附近的有效机电耦合系数和机械品质因数。计算结果表明,随着背衬厚度增大,换能器的有效机电耦合系数和机械品质因数均震荡减小;背衬声阻抗率与压电片声阻抗率差值增大,换能器有效机电耦合系数减小,机械品质因数增大;保持压电片厚度不变,增大背衬的机械损耗因子,换能器有效机电耦合系数单调减小,机械品质因数有极小值,在给定频率范围内电特性曲线趋于光滑。用有限元方法验证了等效电路计算方法的正确性,并对比了换能器的测试结果和计算结果。计算所得规律为厚度模压电换能器的设计和实验制作提供了理论依据。