过渡金属原子钴掺杂硅团簇CoSi6-9的密度泛函理论研究

利用密度泛函理论对CoSin(n=6-9)中性团簇的几何结构演化和电子结构性质进行研究,结果表明Co掺杂硅团簇的最小笼状尺寸是n=9,其中Co原子被扭曲状的Si9棱柱包拢。CoSi8团簇由于存在多个能量相近的异构体,导致团簇的吸附活性降低。自然电荷布局分析表明对于笼状的Co@Si9团簇,其电荷主要分布在外围的硅笼,内部的Co原子通过spd杂化与外部硅笼成键,这保持了笼状团簇的稳定。     

密度泛函理论对CdnTen（1≤n≤12）团簇结构与性质的研究

采用基于密度泛函理论的DMol3软件包对CdnTen（1≤n≤12）团簇的几何结构进行优化,并对其能量、频率以及电子性质进行模拟分析. 结果表明,团簇CdnTen（1≤n≤12）与团簇CdnSen（1≤n≤12）具有相似的最低能量结构：当n=1～3时,团簇的最低能量结构是平面结构;当n=4～12时,团簇的最低能量结构可以看成是由Cd2Te2和Cd3Te3团簇的最低能量结构组成的三维笼状结构;当n=12时,Cd12Te12团簇的最低能量结构为一个完美的球壳. 随着团簇尺寸的增大,转移的电荷逐渐增加,转移的电荷量有达到块体中电荷值的趋势. 团簇的总能量二阶有限差分,平均结合能以及能隙都显示团簇的幻数为Cd3Te3,Cd6Te6 和Cd9Te9.     

密度泛函理论对Cd_nTe_n(1≤n≤12)团簇结构与性质的研究

采用基于密度泛函理论的DMol 3软件包对CdnTen(1≤n≤12)团簇的几何结构进行优化,并对其能量、频率以及电子性质进行模拟分析.结果表明,团簇CdnTen(1≤n≤12)与团簇CdnSen(1≤n≤12)具有相似的最低能量结构:当n=1～3时,团簇的最低能量结构是平面结构;当n=4～12时,团簇的最低能量结构可以看成是由Cd2Te2和Cd3Te3团簇的最低能量结构组成的三维笼状结构;当n=12时,Cd12Te12团簇的最低能量结构为一个完美的球壳.随着团簇尺寸的增大,转移的电荷逐渐增加,转移的电荷量有达到块体中电荷值的趋势.团簇的总能量二阶有限差分,平均结合能以及能隙都显示团簇的幻数为Cd3Te3,Cd6Te6和Cd9Te9.     

ZnSe小团簇结构稳定性和电子性质研究

文章研究了小尺寸的(ZnSe)n团簇(n=2-16)的结构和电子性质.通过手工搭建得到团簇结构,用DMol软件包进行结构优化和能量计算,最后分析计算结果 .研究结果表明,对于n=2-4,平面环状结构的能量最低;对于n=5,非平面环状结构的能量最低;对于n=6-12,空心笼状结构的能量最低;对于n=13,核-壳笼状结构的能量最低;对于n=14-16,依旧是空心笼状结构的能量最低.通过分析(ZnSe)_n团簇(n=2-16)的电子性质,我们可以得到,(ZnSe)_9团簇、(ZnSe)_(12)团簇具有很好的稳定性.     

双金属掺杂M2@Si20(M=Ti, Zr, Hf)团簇结构和性质的理论研究

采用密度泛函理论(DFT)和相对论有效原子核势近似(RECP),对M2@Si20(M=Ti,Zr,Hf)团簇的几何结构和电子结构性质进行研究,发现内嵌的金属二聚体和十二面体硅笼构成了稳定的富勒烯结构。通过对团簇电子结构的分析,结果表明Si20团簇掺杂双金属后稳定性得到了提高。对团簇的电荷布局分析表明过渡金属原子(Ti, Zr, Hf)和硅笼之间发生了电荷反转。     

AgGe_n(n=1～17)团簇:几何结构,稳定性和电子性质

利用密度泛函理论的B3LYP/LanL2DZ方法,对AgGe_n(n=1～17)团簇进行了系统的研究,较小的AgGe_m(n=1～11)和相对较大的AgGe_n(n=12～17)团簇出现了不同的生长方式.从n=12开始,形成了银原子被锗原子完全包围的笼状结构.根据AgGe_n团簇的分裂能和二阶能量差分,预测了AgGe_n(n=1～17)团簇的幻数为n=5、10、12和15.Mulliken电荷布局分析显示电荷转移的方向和团簇的大小与掺杂的金属种类有关.通过分析振动光谱,研究了团簇的动态稳定性,在实验中明显的红外谱和拉曼谱能被用来区别团簇结构.     

InnAsn (n=1-20)小团簇几何结构与电子性质的第一性原理研究

基于密度泛函理论的第一性原理方法,采用B3LYP下的赝势基组LanL2DZ,研究了InnAsn (n=1-20)团簇的基态几何结构、相对稳定性、电子性质及其振动光谱. 结果表明,当n=5-11时团簇的基态构型为层状结构; 当n=12-20时团簇的基态构型为笼状结构. 团簇平均结合能、二阶能量差分和HOMO-LUMO能隙均在n=9,12,18出现极大值,说明In9As9、In12As12和In18As18为幻数团簇. 另外,HOMO-LUMO能隙的计算结果表明InnAsn (n=1-20)团簇具有宽带隙半导体特征.     

MSin(M=Y、Pd、La、Yb、Lu)团簇的几何结构及电子性质

利用相对论密度泛函理论在广义梯度近似下研究了MSin(M=Y、Pd、La、Yb、Lu)团簇的结构、稳定性、电子和磁学性质。通过具体的计算和讨论发现：在n≤10时,所有掺杂的金属原子都位于Si原子的外部,具体位置也不尽相同。从n=11开始,随着团簇尺寸的增大,金属原子逐渐陷入Sin团簇的内框架之中,逐渐形成趋于笼形的结构。尤其是金属原子Pd,在n=11时就较早的陷入了Sin团簇的中心,形成笼状的基态结构。在n=16时,我们所研究的所有金属原子都完全陷入了Sin团簇的二十面体的中心。此外,我们还对团簇的磁性进行了计算,结果显示：TMSin团簇的磁性很小,并且从n=6开始,团簇TMSin的磁矩发生“淬灭”。从Mulliken电荷布局分析发现,除了PdSin团簇外,团簇的电荷转移方向随着团簇尺寸的增大发生改变,团簇的轨道杂化主要发生s-p-d轨道电子之间。     

AgGen (n= 1-17)团簇：几何结构，稳定性和电子性质

利用密度泛函理论的B3LYP/LanL2DZ方法,对AgGen (n= 1-17)团簇进行了系统的研究,较小的AgGen (n=1-11)和相对较大的AgGen(n=12-17)团簇出现了不同的生长方式．从n=12开始,形成了银原子被锗原子完全包围的笼状结构．根据AgGen团簇的分裂能和二阶能量差分,预测了AgGen (n= 1-17)团簇的幻数为n=5、10、12 和 15．Mulliken 电荷布局分析显示电荷转移的方向和团簇的大小与掺杂的金属种类有关．通过分析振动光谱,研究了团簇的动态稳定性,在实验中明显的红外谱和拉曼谱能被用来区别团簇结构．     

In_nAs_n(n=1～20)小团簇几何结构与电子性质的第一性原理研究

基于密度泛函理论的第一性原理方法,采用B3LYP下的赝势基组LanL2DZ,研究了In_nAs_n（n=1～20）团簇的基态几何结构、相对稳定性、电子性质及其振动光谱.结果表明,当n=5～11时团簇的基态构型为层状结构;当n=12～20时团簇的基态构型为笼状结构.团簇平均结合能、二阶能量差分和HOMO-LUMO能隙均在n=9,12,18出现极大值,说明In₉ As₉、In₁₂ As₁₂和In₁₈ As₉18)为幻数团簇.另外,HOMO-LUMO能隙的计算结果表明In_nAs_n（n=1～20）团簇具有宽带隙半导体特征.     

Novel metal-encapsulated caged clusters of silicon and germanium

We report the recent findings of metal (M) encapsulated clusters of silicon from computer experiments based on ab initio total energy calculations and a cage shrinkage and atom removal approach. Our results show that using a guest atom, it is possible to wrap silicon in fullerenelike (f) structures, as sp² bonding is not favorable to produce empty cages unlike for carbon. Transition M atoms have a strong bonding with the silicon cage that are responsible for the compact structures. The size and structure of the cage change from 14 to 20 Si atoms depending upon the size and valence of the M atom. Fewer Si atoms lead to relatively open structures. We find cubic, f, Frank-Kasper (FK) polyheral type, decahedral, icosahedral and hexagonal structures for M@Si_n with n = 12-16 and several different M atoms. The magic behavior of 15 and 16 atom Si cages is in agreement with experiments. The FK polyhedral cluster, M@Si₁₆ has an exceptionally large density functional gap of about 2.35 eV calculated within the generalized gradient approximation. It is likely to give rise to visible luminescence in these clusters. The cluster-cluster interaction is weak that makes such clusters attractive for cluster assembled materials. Further studies to stabilize Si₂₀ cage with M = Zr, Ba, Sr, and Pb show that in all cases there is a distortion of the f cage. Similar studies on M encapsulated germanium clusters show FK polyhedral and decahedral isomers to be more favorable. Also perfect icosahedral M@Ge₁₂ and M@Sn₁₂ clusters have been obtained with large gaps by doping with divalent M atoms. Recent results of the H interaction with these clusters, hydrogenated silicon fullerenes as well as assemblies of clusters such as nanowires and nanotubes are briefly presented.     

密度泛函方法研究NiSin(n=1~13)团簇

基于第一性原理,利用密度泛函理论中的广义梯度近似(GGA)系统研究了NiSin(n=1～13)团簇,在充分考虑自旋多重度的基础上讨论了这些团簇的生长行为,电子性质及其磁性,结果表明:NiSin 1的基态结构是在NiSin的基态结构上带帽一个Si原子而得到;随着团簇尺寸的增大,Ni原子逐渐从吸附在sin团簇的表面位置移动到Sin团簇笼内;掺杂Ni原子提高了硅团簇的稳定性;NiSi10团簇的稳定性在所有团簇中是最高的;电子总是从si向Ni转移,Ni原子所带的电荷数不仅与Ni原子的配位数有关,还与Nisin团簇的基态结构密切相关;n=1～2时,团簇的自旋总磁矩为2 μB,当n≥3时,团簇的磁性消失,这可能与Ni原子内部较强的sp-d杂化以及si原子内部的s-p杂化有关.     

Formation of metal-encapsulating Si cage clusters

We report the formation of a series of metal-containing hydrogenated silicon clusters using an ion trap. Mass analyses reveal that many types of transition metal ions M(+) ( M = Hf, Ta, W, Re, Ir, etc.) react with silane (SiH4) to form dehydrogenated MSi( +)(n) cluster ions ( n = 14, 13, 12, 11, 9, respectively) as an end product, indicating that the metal atom is endohedral and stabilizes the Si polyhedral cage. This finding is confirmed by our ab initio calculation that WSi12 is a W-encapsulating Si12 cage cluster, and is very stable owing to both the electronic and the geometrical shell closures.     

Formations and morphological stabilities of ultrathin CoSi₂ films

In this paper we investigate the formations and morphological stabilities of Co-silicide films using 1-8-nm thick Co layers sputter-deposited on silicon(100) substrates.These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450℃ to 850℃.For a Co layer with a thickness no larger than 1 nm,epitaxially aligned CoSi2 films readily grow on silicon(100) substrate and exhibit good morphological stabilities up to 600℃.For a Co layer thicker than 1 nm,polycrystalline CoSi and CoSi2 films are observed.The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon(100) substrate.The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.     

Magnetic properties of Co–Si alloy clusters

We have investigated the electronic structure and the magnetic properties of Co–Si alloy clusters using ab initio spin-polarized density functional calculations. The possible CoSi₂, CoSi, and Co₂Si phase clusters with oblique hexagon prism, icosahedron, and cuboctahedron structures are introduced. The CoSi phase cluster with icosahedron structure has the largest binding energy and amount of charge transfer. We found that HOMO-LUMO gap, magnetic moment, and spin polarization for the Co–Si alloy clusters with icosahedron structure increase with Co concentration. The Si atoms in the CoSi phase with icosahedron structure have negative magnetic moment.     

Formation of the Co/Si(110) interface: Phase composition and magnetic properties

The formation of the Co/Si(110)16 × 2 interface and its magnetic properties are studied by high-energy-resolution photoelectron spectroscopy using synchrotron radiation and magnetic linear dichroism in the photoemission of core electrons. It is shown that a cobalt coating less than 7 Å thick deposited on the silicon surface at room temperature results in the formation of an ultrathin (1.7 Å) interfacial cobalt silicide layer and a layer of silicon-cobalt solid solution. The ferromagnetic ordering of the interface is observed at an evaporation dose corresponding to 6–7 Å in which case a cobalt metal film begins to grow on the solid solution layer. During 300°C-annealing of the sample covered by a nanometer-thick cobalt layer, the metal film gradually disappears and four silicide phases arise: metastable ferromagnetic silicide Co₃Si and three stable nonmagnetic silicides (Co₂Si, CoSi, and CoSi₂).     

用显微拉曼扫描成象(mapping)法测集成电路中CoSi_2电极引起的应力

用显微拉曼扫描成象（ｍａｐｐｉｎｇ）法测集成电路中ＣｏＳｉ２电极引起的应力李碧波黄福敏张树霖（北京大学物理系北京１００８７１高玉芝张利春（北京大学微电子所北京１００８７１）ＳｔｒｅｓＩｎｄｕｃｅｄｂｙＣｏＳｉ２ＧｒｏｗｎｏｎＰｏｌｙｃｒｙｓｔａｌｉｎ...     

Silicide formation in bilayer ultrathin iron and cobalt films on silicon

The processes that occur in ultrathin (up to 1 nm) Fe and Co layers during deposition onto the Si(100)2 × 1 surface in various sequences and during annealing of the formed structures to a temperature of 400°C are studied. The elemental and chemical compositions of the films are analyzed by in situ high-resolution X-ray photoelectron spectroscopy using synchrotron radiation, and their magnetic properties are determined using the magnetic linear dichroism effect in the angular distribution of Fe 3p and Co 3p electrons. It is shown that, when iron is first deposited, the formed structure consists of the layers of FeSi, Fe₃Si, Co-Si solid solution, and metallic cobalt with segregated silicon. The structure formed in the alternative case consists of the layers of CoSi, Co-Si solid solution, Co, Fe-Si solid solution, and Fe partly covered by silicon. All layers (apart from FeSi, CoSi) form general magnetic systems characterized by ferromagnetic ordering. Annealing of the structures at temperatures above 130dgC (for the Co/Fe/Si system) and ～200°C (for Fe/Co/Si) leads to the formation of nonmagnetic binary and ternary silicides (Fe _x Co_{1 ? x} Si, Fe _x Co_{2 ? x} Si).     

笼状团簇Mg12B24结构与性质的密度泛函理论研究

运用杂化密度泛函B3LYP方法,在6-31G*水平上优化得到了一种Mg₁₂B₂₄团簇的笼状稳定结构,其IR最强吸收峰位于205.23 cm^-1,Raman谱的最强峰位于242.63 cm^-1. Mg₁₂B₂₄团簇笼状结构中B原子主要是sp杂化轨道参与成键,Mg原子主要是s轨道参与成键.团簇中B原子层堆积了大量的电子,表明MgB₂的超导作用主要发生在B原子层;B原子层电子存在较强的离域性,也为超导电性提供了条件;Mg原子起了提供电子的作用.