Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

Raman spectroscopy and Hall measurements have been carried out to investigate the differences in near‐surface charge carrier modulation in high energy (~100 MeV) silicon ion (Si⁸⁺) and oxygen ion (O⁷⁺) irradiated n‐GaAs. In the case of O ion irradiation, the observed decrease in carrier concentration with increase in ion fluence could be explained in the view of charge compensation by possible point defect trap centers, which can form because of elastic collisions of high energy ions with the target nuclei. In Si irradiated n‐GaAs one would expect the carrier compensation to occur at a fluence of 2.5 × 10¹³ ions/cm², if the same mechanism of acceptor state formation, as in case of O irradiation, is considered. However, we observe the charge compensation in this system at a fluence of 5 × 10¹² ions/cm². We discuss the role of the complex defect states, which are formed because of the interaction of the primary point defects, in determining carrier concentration in a Si irradiated n‐GaAs wafer. The above results are combined with the reported data from the literature for high energy silver ion irradiated n‐GaAs, in order to illustrate the effect of both electronic and nuclear energy loss on trap creation and charge compensation. Copyright © 2016 John Wiley & Sons, Ltd.     

Study of hydrogenated AlN as an anti‐reflective coating and for the effective surface passivation of silicon

Stacks of aluminum oxide and silicon nitride are frequently used in silicon photovoltaics. In this Letter, we demonstrate that hydrogenated aluminum nitride can be an alternative to this dual‐layer stack. Deposited on 1 Ω cm p‐type FZ silicon, very low effective surface recombination velocities of 8 cm/s could be reached after firing at 820 °C. This excellent passivation is traced back to a high density of fixed charges at the interface of approximately –1 × 10¹² cm^–2 and a very low interface defect density below 5 × 10¹⁰ eV^–1 cm^–2. Furthermore, spectral ellipsometry measurements reveal that these aluminum nitride layers have ideal optical properties for use as anti‐reflective coatings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of polarity inversion on the electrical properties of Ga‐doped ZnO thin films

This study investigates how polarity inversion influences the relationship between the electrical properties of heavily Ga‐doped ZnO (GZO) films deposited by RF magnetron sputtering and their thickness. The electrical properties observed in very thin films are correlated with a change of polarity from O‐polar to Zn‐polar face upon increasing the film thickness based on results of valence band spectra measured by X‐ray photoelectron spectroscopy. It is found that the electrical properties of very thin GZO films deposited on Zn‐polar ZnO templates are significantly improved compared to those deposited on O‐polar face. A low resistivity of 2.62 × 10^–4 Ω cm, high Hall mobility of 26.9 cm²/V s, and high carrier concentration of 8.87 × 10²⁰ cm^–3 being achieved with 30 nm‐thick GZO films using Zn‐polar ZnO templates on a glass substrate. In contrast, the resistivity of 30 nm‐thick GZO films on bare glass that shows more likely O‐polar is very poor about 1.44 × 10^–3 Ω cm with mobility and carrier concentration are only 11.9 cm²/V s and 3.64 × 10²⁰ cm^–3, respectively. It is therefore proposed that polarity inversion plays an important role in determining the electrical properties of extremely thin GZO films. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐flux hard X‐ray microbeam using a single‐bounce capillary with doubly focused undulator beam

A pre‐focused X‐ray beam at 12 keV and 9 keV has been used to illuminate a single‐bounce capillary in order to generate a high‐flux X‐ray microbeam. The BioCAT undulator X‐ray beamline 18ID at the Advanced Photon Source was used to generate the pre‐focused beam containing 1.2 × 10¹³ photons s^?1 using a sagittal‐focusing double‐crystal monochromator and a bimorph mirror. The capillary entrance was aligned with the focal point of the pre‐focused beam in order to accept the full flux of the undulator beam. Two alignment configurations were tested: (i) where the center of the capillary was aligned with the pre‐focused beam (`in‐line') and (ii) where one side of the capillary was aligned with the beam (`off‐line'). The latter arrangement delivered more flux (3.3 × 10¹² photons s^?1) and smaller spot sizes (≤10 µm FWHM in both directions) for a photon flux density of 4.2 × 10¹⁰ photons s^?1µm^?2. The combination of the beamline main optics with a large‐working‐distance (approximately 24 mm) capillary used in this experiment makes it suitable for many microprobe fluorescence applications that require a micrometer‐size X‐ray beam and high flux density. These features are advantageous for biological samples, where typical metal concentrations are in the range of a few ng cm^?2. Micro‐XANES experiments are also feasible using this combined optical arrangement.     

Influence of the defect state of samples on the luminescence spectra of CdS single crystals irradiated by electrons

The photoluminescence spectra of CdS single crystals irradiated by electrons (E = 1.2 MeV, Φ = 2×10¹⁷ cm^?2) are investigated in the visible and near-infrared regions of electromagnetic radiation. Some samples of the CdS single crystals are preliminarily irradiated by neutrons (E = 2 MeV, Φ = 2 × 10¹⁸ cm^?2) with the aim of increasing the concentration of initial structural defects. From analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths λ_m = 0.720, 1.030, and 0.605 μm, it is concluded that the CdS samples with a low concentration of structural defects in the initial state possess the highest resistance to electron radiation. It is assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation is determined by either the mechanisms of subthreshold defect formation or the transformation of the defect complexes in elastic and electric fields near the large structural damages of the crystal lattice.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

p‐type conduction in stacking‐fault‐free m ‐plane GaN

Transport measurements of p‐type m ‐plane GaN films grown on low extended‐defect density, free‐standing m ‐plane (10 0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 10¹⁷ and 8.7 × 10¹⁸ cm^–3. Since faulted, heteroepitaxial m ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect engineering by synchrotron radiation X‐rays in CeO2 nanocrystals

This work reports an unconventional defect engineering approach using synchrotron‐radiation‐based X‐rays on ceria nanocrystal catalysts of particle sizes 4.4–10.6 nm. The generation of a large number of oxygen‐vacancy defects (OVDs), and therefore an effective reduction of cations, has been found in CeO₂ catalytic materials bombarded by high‐intensity synchrotron X‐ray beams of beam size 1.5 mm × 0.5 mm, photon energies of 5.5–7.8 keV and photon fluxes up to 1.53 × 10¹² photons s^?1. The experimentally observed cation reduction was theoretically explained by a first‐principles formation‐energy calculation for oxygen vacancy defects. The results clearly indicate that OVD formation is mainly a result of X‐ray‐excited core holes that give rise to valence holes through electron down conversion in the material. Thermal annealing and subvalent Y‐doping were also employed to modulate the efficiency of oxygen escape, providing extra control on the X‐ray‐induced OVD generating process. Both the core‐hole‐dominated bond breaking and oxygen escape mechanisms play pivotal roles for efficient OVD formation. This X‐ray irradiation approach, as an alternative defect engineering method, can be applied to a wide variety of nanostructured materials for physical‐property modification.     

Charge transfer reaction of multi-charged oxygen ions with O2

The rate of transfer of electrons from O₂ to O²⁺ and O³⁺ has been measured at energies ? 2 eV using a stored ion technique. The rate for O²⁺ is k = 1.0(0.3) × 10^?9 cm³/s and for O³⁺, k = 2.5(0.3) × 10^?9 cm³/s, compared to calculated Langevin rates of 1.8 × 10^?9 cm³/s and 2.7 × 10^?9 cm³/s respectively.     

Interaction of CdSe/ZnS core-shell semiconductor nanocrystals in solid thin films

The optical properties of CdSe/ZnS semiconductor nanocrystals with the core-shell structure are studied upon visible-laser excitation in a wide range of flux densities. It is demonstrated that the dimensional quantization effect is preserved in the films with a limiting high concentration of nanocrystals. A strong bathochromic shift of the absorption and luminescence peaks relative to the peak positions in the corresponding spectra of nanocrystals in films with a relatively low concentration of nanocrystals and solutions is caused by a high concentration of nanocrystals and the dipole moment related to the asymmetry of the nanoparticles. The shift is varied from 35 to 50 nm depending on the film thickness. The luminescence spectra of the films remain unchanged upon an increase in the laser intensity to 1 × 10⁶ W/cm². The laser action on the nanoparticle films is studied at intensities (5 × 10⁶?1 × 10⁹ W/cm²) higher than the damage threshold.     

Spin relaxation of charged centers in silicon in the presence of photocarriers (Si: Cr+, [Cr+−B−])

Spin relaxation of deep charged centers Cr⁺ and of donor-acceptor pairs (Cr⁺?B^?)⁰ in silicon is studied by nonstationary EPR spectroscopy at liquid-helium temperatures. We observed the effect of an increase in the spin-lattice relaxation rate under band-to-band sample illumination; the magnitude of the effect is proportional to the photoelectron concentration. The spin-dependent carrier trapping is shown to play a dominant role in spin relaxation under illumination for centers of both types. Coupled rate equations describing the interaction of various subsystems with one another and with the bath are solved. A comparison of experimental data with theory yielded the electron trapping cross sections σ_r(Cr⁺)?4.9×10^?12 cm² and σ_r(Cr⁺?B^?)?1.6×10^?12 cm² at T=4.2 K. The results obtained are discussed in terms of the theory of trapping by attractive centers.     

High critical oxygen concentration in microcrystalline silicon solar cells

For microcrystalline silicon based p–i–n solar cells the effect of deposition conditions on the critical oxygen concentration was investigated. All solar cells were prepared by 13.56 MHz plasma‐enhanced chemical vapour deposition. The critical oxygen concentration defines the lowest oxygen concentration in the intrinsic absorber layer causing a deterioration of the solar cell performance. For intentional contamination of ～1.2–1.3 µm thick i‐layers, the oxygen was inserted by a controllable leak at the process gases supply line, i.e. by a gas pipe leak. For µc‐Si:H deposited at a discharge power of 0.53 W/cm² we find a critical oxygen concentration of 1–2 × 10¹⁹ cm^–3 in agreement with values commonly reported in literature. However, changing the deposition conditions, we find that the critical oxygen concentration in µc‐Si:H cells is not fixed. At reduced power of 0.20 W/cm² a much higher value for the critical oxygen concentration of 1 × 10²⁰ cm^–3 is observed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Measurement of the absolute Raman scattering cross section of the 1584‐cm−1 band of benzenethiol and the surface‐enhanced Raman scattering cross section enhancement factor for femtosecond laser‐nanostructured substrates

The absolute Raman scattering cross section (σ_RS) for the 1584‐cm⁻¹ band of benzenethiol at 897 nm (1.383 eV) has been measured to be 8.9 ± 1.8 × 10⁻³⁰ cm² using a 785‐nm pump laser. A temperature‐controlled, small‐cavity blackbody source was used to calibrate the signal output of the Raman spectrometer. We also measured the absolute surface‐enhanced Raman scattering cross section (σ_SERS) of benzenethiol adsorbed onto a silver‐coated, femtosecond laser‐nanostructured substrate. Using the measured values of 8.9 ± 1.8 × 10⁻³⁰ and 6.6 ± 1.3 × 10⁻²⁴ cm² for σ_RS and σ_SERS respectively, we calculate an average cross‐section enhancement factor (EF) of 0.8 ± 0.3 × 10⁶. Copyright © 2009 John Wiley & Sons, Ltd.     

锆离子注入锆-4合金缺陷的慢正电子研究

采用慢正电子束多普勒展宽谱研究了Zr离子注入Zr-4合金产生的缺陷及其退火回复行为，发现经过大于离子注入剂量为1×10¹⁶cm^-2的样品所产生的缺陷在注入过程中已经回复，而对剂量为1×10¹⁵cm^-2样品做300℃退火处理，其缺陷基本回复，得出合金缺陷回复能较低的结论. 考虑到材料的缺陷含量越高，其抗腐蚀性能越差，在辐照环境下通过给材料保持一定温度，即可使其缺陷得到较好回复，从而提高材料的抗腐蚀性能.     

Radiation hardening in niobium-dependence of the yield stress on neutron dose

Abstract

Niobium samples were neutron-irradiated at reactor ambient temperatures (approximately 50 °C for polycrystals and 90°C for single crystals) to doses from 4 × 10¹⁵ to 8 × 10¹⁸ neutrons/cm² (E> 1 MeV). The density and size distribution of radiation-produced defect clusters, observed by transmission electron microscopy, were measured in polycrystalline niobium over a range of doses from 2 × 10¹⁷ to 4.4 × 10^l8 neutrons/cm². The TEM results were correlated with yield stress measurements as a function of dose. The radiation hardening was analyzed on the basis of a planar dispersed barrier model. It was found that the observed increases in yield stress at low doses were consistent with the measured density and size distribution of the defect clusters, with a cluster strength of (0.5–0.8) Gb² (G, shear modulus; b, Burgers vector). This corresponds to strong barrier hardening. At doses above about 10¹⁸ neutrons/cm², the hardening rate decreased sharply; this apparent saturation is discussed in terms of the coarsening of defect clusters, dislocation channeling, and the effect of interstitial impurities.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

调制掺杂GaAs/N-AlGaAs异质结的制备及输运性质

本文报道利用垂直束源式的分子束外延设备,生长了高质量的调制掺杂GaAs/N-AIGaAs异质结构,液氦温度下的二维电子迁移率达4.26×10⁵cm²/V·s(非光照)、5.9×10⁵cm²/V·S(光照)。用脉冲磁场下的磁声子共振测量,得到了二维电子的有效质量,并研究了异质结构中二维电子的低场迁移率增强特性及低温强磁场下的量子霍耳效应。 关键词：     

Oxygen isotope separation utilizing two-frequency infrared multiphoton dissociation of 2,3-dihydropyran

Oxygen isotope separation has been examined by utilizing the two-frequency infrared multiphoton dissociation (IRMPD) of 2,3-dihydropyran (DHP). The two-frequency IRMPD reduces the required laser fluences to those lower than the damage threshold of optical windows. For example, dissociation probability of DHP containing ¹⁸O (D(¹⁸O)) and enrichment factor (S) were obtained to be 1.6×10⁻³/pulse and 316, respectively, by the simultaneous irradiation with 1052.2 cm⁻¹ photons at 0.45 J/cm² and 1031.5 cm⁻¹ photons at 1.06 J/cm². These are comparable with D(¹⁸O)=2.2×10⁻³/pulse and S=391 obtained by the single-frequency irradiation of 1033.5 cm⁻¹ photons at 2.2 J/cm². Therefore, the production rate of an ¹⁸O enriched dissociation product has been increased to four times or more, compared with the single-frequency IRMPD, and this two-frequency method would promise a practical large scale separation.     

Monte Carlo simulation of thermal neutron flux of americium–beryllium source used in neutron activation analysis

The neutron activation analysis is a method of exclusively elemental analysis. Its implementation of irradiates the sample which can be analyzed by a high neutron flux, this method is widely used in developed countries with nuclear reactors or accelerators of particle. The purpose of this study is to develop a prototype to increase the neutron flux such as americium–beryllium and have the opportunity to produce radioisotopes. Americium–beryllium is a mobile source of neutron activity of 20 curie, and gives a thermal neutron flux of (1.8 ± 0.0007) × 10⁶ n/cm² s when using water as moderator, when using the paraffin, the thermal neutron flux increases to (2.2 ± 0.0008) × 10⁶ n/cm² s, in the case of adding two solid beryllium barriers, the distance between them is 24 cm, parallel and symmetrical about the source, the thermal flux is increased to (2.5 ± 0.0008) × 10⁶ n/cm² s and in the case of multi-source (6 sources), with-out barriers, increases to (1.17 ± 0.0008) × 10⁷ n/cm² s with a rate of increase equal to 4.3 and with the both barriers flux increased to (1.37 ± 0.0008) × 10⁷ n/cm² s.     

Untersuchung der Polarisationsebene von Photonen nach Compton-Streuung an polarisierten Elektronen

Two polarization phenomena in Compton scattering by polarized electrons were investigated. In the first experiment, the rotation of the polarization plane of photons passing through magnetized iron and gadolinium was measured. This effect arises from a spin dependence of the Compton forward scattering amplitude. For 228 and 333 keV photons and iron absorbers, the observed rotation angles areφ ₀=(3.90±0.57) ×10^?3 rad · cm^?2 and (4.75±0.58)×10^?3 rad · cm^?2, respectively. Secondly, the orientation of the photon polarization plane after scattering of unpolarized photons by polarized electrons was measured. This experiment tests time reversal invariance in quantum electrodynamics. No dependence of the polarization plane on the direction of the electron spin was found within 2×10^?3.