3 MeV electron irradiation-induced defects in CuInSe2 thin films |
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| Institution: | 1. School of Materials Science & Engineering, UNSW Sydney, NSW, 2052, Australia;2. Voestalpine BÖHLER Edelstahl GmbH & Co KG, Kapfenberg, 8605, Austria;1. University of Agder, Department of Political Science and Management, Kristiansand, Norway;2. University of Ariel, Department of Economics and Business Administration, Ariel, Israel;3. University of Agder, School of Business and Law, Post Box 422, Kristiansand, Norway;4. European Research Executive Agency, European Commission, Brussels, Belgium;5. Nordic Institute for Studies in Innovation, Education and Research (NIFU), Oslo, Norway;6. University of Modena and Reggio Emilia, Department of Life Sciences, Modena, Italy |
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| Abstract: | 3 MeV electron irradiation induced-defects in CuInSe2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×1017 cm−2. The carrier removal rate was estimated to be about 1 cm−1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained ND=1.8×1017 cm−3, NA=1.7×1016 cm−3 and ED=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and NT0=1.4×1017 cm−3 and ET=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation. |
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