Neutron-induced molecular defect O<Stack><Subscript>2</Subscript><Superscript>−</Superscript></Stack> in beryllium orthogermanate

Be₂GeO₄ polycrystalline samples preliminarily irradiated by fast neutrons (E ～ 1 MeV, Φ = 4.5 × 10¹⁷ cm^?2) were studied by photoluminescence spectroscopy using synchrotron radiation pulses for excitation. The neutron-induced luminescence band observed at 1.7 eV in the spectra of the irradiated samples is assigned to the radiative relaxation of a molecular ion O ₂ ^? . The luminescence of these defects in the Be₂GeO₄ structure is effectively excited by 4.7-and 5.2-eV photons. At low temperatures (10 K), the profiles of the photoluminescence and excitation bands have a fine structure characteristic of electron-vibration interactions. The vibration frequencies for the ground state (v₁ = 161 cm^?1) and two excited states (v₂ = 672 cm^?1 and v₃ = 887?1451 cm^?1) were measured. Potential curves of the energy states of the O ₂ ^? center are constructed in terms of the Morse model using the experimental data. The optical spectrum fine structure is shown to be predominantly due to intrinsic vibrations of the molecular defect.     

Multistage radiation-stimulated changes in the microhardness of silicon single crystals exposed to low-intensity β irradiation

Radiation-stimulated and postradiation changes in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of β particles (I = 9 × 10⁵ cm^?2 s^?1, W = 0.20 + 0.93 MeV) are studied. It is established that the inversion of the radiation-induced plastic effect occurs at a characteristic irradiation time τ_c = 75 min; i.e., irradiation of silicon single crystals for a time τ < τ_c leads to nonmonotonic reversible hardening, whereas nonmonotonic reversible softening is observed under irradiation for a time τ > τ_c. It is demonstrated that there exists a correlation between the nonmonotonic dependences of the microhardness and the concentration of electrically active defects at acceptor levels with energies E _c ? 0.11 eV, E _c ? 0.13 eV, and E _c ? 0.18 eV on the irradiation time.     

Anomalous magnetic properties of electron-irradiated antiferromagnetic copper monoxide

The influence of radiation defects on the magnetic properties of polycrystalline CuO and a high density nanoceramic with crystallite sizes d = 5 and 15 nm has been studied in the temperature range T = 77–300 K. Electron irradiation at fluences Φ = 5 × 10¹⁸ cm^?2 initiated an increase in the susceptibility χ ～ 1/T below 150 K, a feature anomalous for 3D antiferromagnets. The nonlinear behavior of magnetization in weak fields, the increase in the magnetic moment with decreasing temperature, and observation of the spontaneous magnetic moment at temperatures T < 150 K can be attributed to local changes in the exchange parameters and the formation of clusters with uncompensated magnetic moments in the antiferromagnetic matrix near point defects.     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Relaxation of radiation-induced defects in CuO

The relaxation of radiation-induced defects in the CuO polycrystal and nanoceramic with the particle size d = 15 nm irradiated by an electron dose of F = 5 × 10¹⁸ cm^?2 has been studied. In the irradiated samples, a strong susceptibility increase with decreasing temperature T < 150 K is observed. This increase is due to the formation of ferromagnetic polarons in the antiferromagnetic matrix near the defects. The structural symmetry distortion makes the samples unstable. The time variations of the magnetic properties in the CuO samples prepared by different methods are compared.     

Small-angle neutron scattering study of radiation defects in synthetic quartz

The superatomic structure of synthetic quartz single crystals with dislocation densities ρ = 54 and 570 cm^?2 was studied in the initial state and after irradiation with fast neutrons with energies E _n > 0.1 MeV in a WWRM reactor (St. Petersburg Nuclear Physics Institute) in the fluence range F = 0.2 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². Weak irradiation with F = 0.2 × 10¹⁷ neutrons/cm² causes only slight structural changes, whereas appreciable generation of defects with radii of gyration r _g ～ 1–2 nm and R _G ～ 40–50 nm occurs at F = 7.7 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². As the fluence increases further, the number and volume fraction of point defects, as well as extended (channels ～2 nm in radius) and globular (amorphous phase nuclei) defects, increase.     

Transient optical absorption induced by an electron pulse in KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> crystals

The efficiency of formation and time evolution of radiation-induced structural defects and pulsed luminescence in KPb₂Cl₅ crystals under the action of a single electron pulse (E = 250 keV, τ = 20 ns) have been investigated. The spectra (1.1–3.8 eV) and relaxation kinetics (time interval 5 × 10^?8?5 s) of transient optical absorption and the pulsed cathodoluminescence spectra and decay kinetics (1.4–3.1 eV) have been measured in the temperature range 80–300 K. It is revealed that the induced optical density and its time evolution depend strongly on temperature, and the absorption relaxation time contains several components and reaches several seconds at T = 300 K. The decay kinetics of transient absorption and pulsed cathodoluminescence kinetics have different orders and are controlled by different relaxation processes.     

Field ion microscopy of cascades of atomic displacements in metals and alloys after various types of irradiation

Experimental results on atomic-spatial investigation of radiative defect formation in surface layers of materials, initiated by neutron bombardment (of Pt, E > 0.1 MeV) and ion implantation (in Cu₃Au: E = 40 keV, F = 10¹⁶ ion/m², j = 10^?3 A/cm²), are considered. Quantitative estimates are obtained for the size, shape, and volume fraction of cascades of atomic displacements formed under various types of irradiation in the surface layers of the materials. It is shown that the average size of radiation clusters after irradiation of platinum to a fast neutron fluence of 6.7 × 10²² m^?2 (E > 0.1 MeV) is about 3.8 nm. The experimentally established average size of a radiation cluster (disordered zone) in the alloy after ion bombardment is 4 × 4 × 1.5 nm.     

Effect of correlation between the shallow and deep metastable level subsystems on the excitonic photoluminescence spectra in <Emphasis Type="Italic">n</Emphasis>-GaAs

The excitonic photoluminescence spectra of GaAs epitaxial layers are studied. Changes in the relative arrangement of shallow and deep centers in the tetrahedral lattice are shown to bring about changes in the decay kinetics and the shape of the (D⁰, x) emission line (corresponding to an exciton bound to a shallow neutral donor). This change in the excitonic photoluminescence spectra is caused by dispersion in the exciton binding energy of shallow donors E_D, the dispersion being a result of the influence of the subsystem of deep metastable defects in n-GaAs crystals.     

Absorption spectra of some radiation-doped A<Subscript>3</Subscript>B<Subscript>5</Subscript> compounds

Temperature dependences of the absorption coefficient in A₃B₅ crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 10¹⁷ electron/cm² are studied. A low-lying E_v + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga_1–xIn_xAs, InP, and InP〈Fe〉).     

Intensity parameters for Er<Superscript>3+</Superscript> ions in calcium-niobium-gallium garnet crystals

Based on the analysis of the absorption spectra of Er-doped calcium-niobium-gallium garnet (Er:CNGG) crystals according to the Judd-Ofelt theory, the intensity parameters for these crystals are determined to be Θ₂ = 3.43 × 10^?20 cm² Θ₄ = 1.20 × 10^?20 cm², and Θ₆ = 0.58 × 10^?20 cm². The parameters found are compared with the intensity parameters for other laser oxide crystals. Using these intensity parameters, the probabilities of radiative transitions between the energy levels of Er³⁺ ions in CNGG crystals and the luminescence branching ratios β_JJ’ are calculated. From the measured lifetime of the ⁴ I _11/2 level of Er³⁺ ions (τ = 626 μs) and the probability of the radiative transition from this level (A = 192 s^?1), it is found that about 88% of the excitation energy in the Er:CNGG crystals is nonradiatively transferred from the ⁴ I _11/2 to the ⁴ I _13/2 level. It is suggested that an increase in the oscillator strength and in the line strength of the ⁴ I _15/2 → ² H _11/2 transition of Er³⁺ in CNGG crystals, as well as an increase in the intensity parameter Θ₂ with respect to the corresponding parameters for other garnet crystals are caused by the existence in CNGG crystals of Er³⁺ centers with the environment symmetry lower than D ₂.     

Photoluminescence in germanium with a quasi-equilibrium dislocation structure

The dislocation-related photoluminescence of n-Ge single crystals with a quasi-equilibrium structure of 60° dislocations is investigated at a temperature of 4.2 K. It is shown that the dislocation-related photoluminescence spectra are described by a set involving from 8 to 13 Gaussian lines with a width of less than 15 meV. With due regard for the data available in the literature, the Gaussian lines with maxima at energies in the range 0.47 < E _m ≤ 0.55 eV are assigned to the emission of 90° Shockley partial dislocations involved in quasiequilibrium segments of 60° dislocations with different values of the stacking fault width Δ (Δ = Δ₀, Δ < Δ₀, and Δ > Δ₀). It is revealed that the d8 line at the energy E _m = 0.513 eV, which corresponds to the emission of straight segments with the equilibrium stacking fault width Δ₀, dominates in the photoluminescence spectra only at dislocation densities N _D < 10⁶ cm^?2. As the dislocation density N _D increases, the intensity of the d8 line decreases with the d7 line (E _m ≈ 0.507 eV) initially and the d7 and d6 lines (E _m ≈ 0.501 eV) then becoming dominant in the photoluminescence spectrum. The d7 and d6 lines are attributed to the emission of segments with stacking fault widths Δ < Δ₀. Possible factors responsible for the formation of stacking faults with particular widths Δ ≠ Δ₀ for quasi-equilibrium dislocations are discussed.     

Very high energy γ rays from close active galactic nuclei Mkn 421, Mkn 501, and NGC 1275

The results of observations of two types of metagalactic sources, BLLacs Mkn 421 (z = 0.031) and Mkn 501 (z = 0.034) and the Seyfert galaxy NGC 1275 (z = 0.017) are reported. These observations have been carried out with the SHALON mirror telescope (Lebedev Institute of Physics, Russian Academy of Sciences). The γ-ray fluxes (with energies E > 0.8 TeV) from Mkn 421 and Mkn 501, averaged over the entire observation period, were estimated to be (0.63 ± 0.14) × 10^?12 and (0.86 ± 0.13) × 10^?12 cm^?2 s^?1, respectively. The flux from the source NGC 1275 was (0.78 ± 0.13) × 10^?12 cm^?2 s^?1. The energy spectra of γ rays and images of the sources are reported.     

Multiphoton excitation and thermal activation in indirect bandgap semiconductors

The single crystals of wide- and indirect-bandgap semiconductor CdI₂ were grown and their optical properties as well as the defect-induced excitonic photoluminescence (PL) spectra were studied. The multiphoton excited PL spectra, charactering the emissions from excitons in the visible region, were taken. The PL intensity (I_PL) was found to vary nonlinearly with pumping power (P). The I_PL was also found to decrease with increasing temperature. The temperature dependence of I_PL for each P followed a fashionable relationship, from which the activation energy (?E) of the defect-induced excitonic trapping was calculated. The ?E was found to slightly decrease with increasing P, with an average value of 2.5 meV. The results, however, demonstrates the existence of the self-trapped excitons responsible for the characteristics broad-band emission in the visible range. This study shows that the single crystals of CdI₂ might have potential in applications as thermo-luminescent dosimeters in radiation measurements.     

Effect of correlation in the impurity defect distribution on the micromechanical properties of GaAs: Te single crystals

The micromechanical properties of Te-doped GaAs single crystals with free carrier density n ₀ = 10¹⁷?5 × 10¹⁸ cm^?3 were studied. The obtained data are as follows: the nonmonotonic concentration dependences of the microhardness, the lengths of dislocation rosette rays, the densities of dislocations, and the position and half-width of the Raman line of a transverse optical phonon. The data are interpreted in terms of spatial correlation in the impurity defect distribution.     

Electron radiation effects on InAs/GaAs quantum dot lasers

The InAs/GaAs quantum dot laser diodes and corresponding quantum dot samples are irradiated by 1 MeV electron. The laser performance and quantum dot photoluminescence intensity at room temperature are enhanced over a fluence range of 4 × 10¹³ cm^?2. The radiation-induced defects increase the efficiency of carrier transfer to the quantum dots, which results in the improvement of photoluminescence performance under low level displacement damage. The contact resistant of quantum dot lasers decreases because the ohmic contact is also improved by electron irradiation.     

Induced absorption in yttrium aluminium perovskite crystals irradiated by 12C and 235U ions

The present work is devoted to investigation of optical absorption in pure and neodymium-doped YAlO₃ (YAP) single crystals in the spectral range 0.2–1.1 μm induced by the influence of ¹²C ions irradiation with energy 4.50 MeV/u (MeV per nucleon) and a fluence 2 × 10⁹ cm^?2 or of ²³⁵U ion irradiation with energy 9.35 MeV/u and a fluence 5 × 10¹¹ cm^?2. The induced absorption in the case of ¹²C ions irradiation is caused by recharging of point growth defects and impurities under the radiation influence. After irradiation by ²³⁵U ions with fluence 5 × 10¹¹ cm^?2 the strong absorption rise is probably caused by contribution of the lattice destruction as a result of heavy ion bombardment.     

Positron annihilation in electron-irradiated n-type gap crystals

Abstract

The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 10¹⁹ cm^?2 at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 10¹⁸ cm^?2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C.     

Spectroscopy of the <Superscript>5</Superscript>H superheavy hydrogen isotope

The formation of the ⁵H superheavy hydrogen isotope was experimentally sought in the reactions induced by stopped π^? mesons absorbed by ⁹Be nuclei. Peaks in missing-mass spectra were observed in two reaction channels, ⁹Be(π^?, pt)X and ⁹Be(π^?, dd)X, and were attributed to the ⁵H resonance states. The lowest state has parameters Er=5.5±0.2 MeV and Г=5.4±0.5 MeV [E_r is the resonance energy measured from the (triton + two neutrons) threshold]. Therefore, ⁵H is bound more weakly than ⁴H. Excited states of ⁵H were also observed. All three resonance levels (E_1r=10.6±0.3 MeV, Г_1r=6.8±0.5 MeV; E_2r=18.5±0.4 MeV, Г_2r=4.8±1.3 MeV; E_3r=26.7±0.4 MeV, Г_3r=3.6±1.3 MeV) can decay into five free nucleons.