2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

激光器件 气体激光器

TN248．2 2006064950 THz连续波DCN激光器的实验研究=Experimental study of THz CW high-power DCN laser[刊,中]/高翔(中科院等离子体所．安徽．合肥(230031)),刘海庆…//激光技术,—2006,30(1)．—64—66,69介绍了运行在1．54THz(195μm)和1．58THz(190μm)的波导型辉光放电激励的大功率连续波DCN激光器的开发和研制工作。实验中对放电电流、激光管温度、气压等参数进行了优化,研究了EH_(11)模DCN激光在自由空间的传输特性。研究表明,利用新的N_2,CD_4和D_2混合气体的THz DCN激光器可以得到稳定连续的高功率放     

输出超过5W的掺钕光纤激光器

输出超过５Ｗ的掺钕光纤激光器Ｐｏｌａｒｏｉｄ公司的科研人员研制了一种掺法光纤激光器，其输出为ｓｗ单模模连续波，波长为１０６０ｎ。。该研制小组认为这种功率是目前连续单模光纤激光器所能达到的最高功率。这种性能的改进归因于光纤独特的几何结构，它能为捕获激光...     

小型化外腔可调谐THz参量振荡器

基于LiNbO3晶体垂直表面输出技术,设计了一台小型化外腔THz参量振荡器。利用小型化灯1064 nm脉冲激光器泵浦MgO:LiNbO3,通过优化设计三波非共线相位匹配的光学参量振荡腔结构,实现THz垂直晶体表面输出,减少LiNbO3晶体对THz波的吸收,提高了THz波输出光束质量。当在泵浦光能量为128 mJ、重复频率为10 Hz时,获得THz波的调谐范围为0.69~3.01 THz,在1.6 THz处获得THz波最大平均功率为10.8 W,脉冲宽度为10 ns,对应THz波能量转换效率为8.4310-6。     

基于太赫兹量子级联激光器的无线信号传输的实现

文章采用连续波激射的太赫兹量子级联激光器(THz QCL) 为发射端、光谱匹配的THz量子阱探测器(THz QWP) 为接收端, 搭建了基于THz波的无线传输演示系统. 测量并分析了该演示系统的传输带宽. 采用搭建的无线传输系统演示了基于4.13 THz电磁波的图片文件的无线传输过程, 得到了与源文件一致的结果, 验证了采用THz QCL和THz QWP进行THz信号无线传输的可行性.最后, 分析了演示系统的传输速率, 给出了提高系统传输速率的方法.     

光泵THz激光器输出频率稳定特性研究

在太赫兹(THz)成像、雷达探测、相干通信等许多应用领域中,THz辐射源的频率稳定性是直接影响其应用效果的核心问题之一。基于双光子迁移效应建立了光泵THz激光器输出激光频率漂移的物理模型,推导出THz激光频率漂移的解析计算公式。以光泵甲醇(CH₃OH)为例, 给出了不同压强下的甲醇吸收谱线,定量分析了泵浦光频率漂移和泵浦功率对THz激光频率稳定性的影响,并讨论了THz激光腔内工作气体压强对THz激光频率漂移的影响。研究结果表明：随着泵浦光功率的增加,THz激光频率的漂移量逐渐增加;随着THz腔内工作气体压强升高,THz激光的频率漂移逐渐下降;当泵浦光频率漂移量在一定范围时,将出现THz激光的频率漂移量极值,且泵浦光的频率漂移量等于工作气体吸收谱线宽度的1/4时,THz激光输出的频率漂移达到极值。由此可见,在实际工作中,不仅需要合理选择腔内的工作条件(压强、温度),而且还需要采取措施将泵浦光的频率漂移控制在一定范围以内,以提高THz激光的输出频率稳定性。     

二极管泵浦的高效连续波基横模Nd：YAG激光器

报道了用激光二极管端面泵浦的高效连续波ＴＥＭ００模Ｎｄ：ＹＡＧ激光器，最大输出为０．６５Ｗ，斜效率５１％，光－光效率最高达４０．６％，并给出了耦合光学系统和二极管泵浦Ｎｄ：ＹＡＧ激光器的器件结构．     

基于多层石墨烯可饱和吸收体的被动调Q Ho∶YAG激光器

报道了2μm被动调Q的Ho∶YAG激光器,该激光器采用Tm~(3+)光纤激光器作为泵浦源,使用多层石墨烯作为可饱和吸收体。在连续波激光输出模式下,当泵浦功率为4.2 W时,获得了750 mW激光输出,输出激光中心波长为2.09μm,斜率效率为29.6%。在连续波激光器谐振腔中插入多层石墨烯可饱和吸收体并调整谐振腔,获得了脉冲激光输出。当泵浦功率为4.2 W时,获得最小脉冲宽度3.1μs、重复频率66.6 kHz的脉冲激光输出,其最大平均输出功率为170 mW,斜率效率为12.6%,光束质量因子M_x~2=1.15,M_y~2=1.12。     

二极管泵浦的高效连续波基横模Nd：YAG激光顺

报道了用激光二极管端面泵浦的高效连续波ＴＥＭ００模Ｎｄ：ＹＡＧ激光器，最大输出为０．６５Ｗ，斜效率５１％，光－光效率最高达４０．６％，并给出了耦合力学系统和二极管泵浦Ｎｄ：ＹＡＧ激光器的器件结构。     

连续波HF激光泵浦Fe2+: ZnSe激光器的可行性

针对目前Fe2+: ZnSe激光器缺乏有效的高功率泵浦源这一关键瓶颈,提出了采用连续波HF化学激光器泵浦Fe2+: ZnSe来实现4 μm波段激光输出的技术路线,结合实验和理论手段考察了此技术路线的可行性。首次获得了由连续波HF化学激光泵浦的Fe2+: ZnSe激光器的W级激光输出,输出功率约为1.7 W,谱线峰值波长为4.18 μm,出光时间约2 s。     

Broad gain,continuous-wave operation of InP-based quantum cascade laser at λ~11.8 μm

We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.     

Metal-clad ridge waveguide structure InGaP/InGaAIP visible laser diodes

InGaP/InGaAIP visible-light laser diodes with a metal-clad ridge waveguide structure have been fabricated. Compressively strained SCH-MQW structures were grown by low-pressure MOCVD and the lasing wavelength was 690 nm. The threshold current was 28 mA at 25°C for a 400 m cavity and 5 m stripe width. CW operation was obtained as the cleaved device by employing thick gold layer as a heat spreader. The light-output power versus CW current was linear up to a maximum light output power of 38 mW. Stable operation of the fundamental transverse optical mode was maintained up to 30 mW. These results show that this metal-clad ridge waveguide structure provides sufficient current confinement even under high light output power operation.     

连续锁模Nd∶YVO4激光器实现1 GHz高频输出

LD抽运全固体Nd∶YVO4激光器在连续锁模状态运转下获得了高达1 GHz的重复频率.实验中采用半导体可饱和吸收镜作为锁模元件.利用透过率只有0.8%的输出镜以及可获得较小抽运光斑的2 WLD作为抽运源来优化激光器设计,有效地抑制了调Q锁模状态的运转.低的激光器振荡阈值(35 mW)和连续锁模阈值(0.8 W)显示了饱和吸收体低的插入损耗和激光器合理的设计.在最大抽运1.6 W 时获得了210 mW的平均输出功率.     

连续锁模Nd：YVO4激光器实现1 GHz高频输出

LD抽运全固体Nd:YVO4激光器在连续锁模状态运转下获得了高达1 GHz的重复频率.实验中采用半导体可饱和吸收镜作为锁模元件.利用透过率只有0.8%的输出镜以及可获得较小抽运光斑的2 W LD作为抽运源来优化激光器设计,有效地抑制了调Q锁模状态的运转.低的激光器振荡阈值（35 mW）和连续锁模阈值(0.8 W)显示了饱和吸收体低的插入损耗和激光器合理的设计.在最大抽运1.6 W时获得了210 mW的平均输出功率.     

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.     

High-power and high-temperature THz quantum-cascade lasers based on lens-coupled metal-metal waveguides

A metal-metal waveguide quantum cascade laser with an abutted silicon hyperhemispherical lens is demonstrated at ~4.1 THz. The device produced 145 mW of peak pulsed power at 5 K with a wall-plug power efficiency of 0.7%, lasing up to a maximum operating temperature of 160 K. The far-field beam pattern has a full width at half-maximum value of ~4.8 degrees in the H plane. The same device produced ~26 mW of peak power using a Winston cone instead of a lens, lasing up to 165 K. The large increase in output power is mainly attributed to an increase in collection efficiency.     

Hybrid point/ring-defect photonic crystal VCSEL with high spectral purity and high output power

A hybrid point/ring-defect photonic crystal vertical-cavity surface-emitting laser (VCSEL) is presented. To analyze the possible lasing supermodes, the device is simplified to a 3 × 1 VCSEL array along any direction in plane due to the hybrid point/ring defects with approximately radial symmetry. Three supermodes are predicted based on the coupled-mode theory. In the experiment, only three supermodes appear at most over the entire current range, consistent with the theoretical predictions. The full width at half maximum of the lasing spectrum at rollover is less than 0.1 nm, and the maximum output power of the device reaches 4.3 mW.     

Studies on the SFD Properties of NdxGd1-xCa4O(BO3)3 Solid-solution Crystal

NdxGd1-xCa4O(BO3)3 (NdGdCOB) is a new self-frequency-doubling (SFD) solid-solution crystal. The second-harmonic generation (SHG) phase-matching (PM) curves were calculated by using refractive indices. The deff of NdGdCOB crystal along different PM directions were calculated according to the sellmeier equation and dijk data in which the (θ=66.8°, φ=132.6°) PM direction has the highest deff. SFD experiments were carried out with Ti:sapphire CW laser and pulsed dye-laser. A green laser output power up to 225 mW at 530 nm was achieved from a 7×3×3 mm3 crystal sample pumped by 1560 mW CW Ti:sapphire laser. The lasing threshold of SFD was lower than 1.8 mW along the PM direction (66.8°,132.6°). The optical-optical conversion efficiency was 14.4%. The conversion efficiency was 7.7% when 10×3×3 mm3 sample was side-pumped by the pulsed dye-laser tuned to 595.4 nm with 17.5 mJ energy and the lasing threshold is 1.2 mJ.     

Studies on the SFD Properties of Nd_xGd_(1-x)Ca_4O(BO_3)_3 Solid-solution Crystal

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1.06 μm InGaAs/InGaAsP量子阱半导体激光器的温度特性

研究了1.06 μm InGaAs/InGaAsP量子阱半导体激光器厘米bar模块的温度特性,测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明,器件在15~55 ℃范围内所测的输出光功率由40.7 W降低到29.4 W,阈值电流由9.29 A升高到17.24 A,转换效率由54.22%降低到37.55%,光谱漂移为0.37 nm/℃,特征温度为68.6 K。实验结果表明,为保持器件性能的稳定,在实际应用过程中应该使器件的温度控制在15~25 ℃范围内。