Dissociations of O2 molecules on ultrathin Pb（111） films： first-principles plane wave calculations

Using first-principles calculations,we systematically study the dissociations of O₂ molecules on different ultrathin Pb（111） films.According to our previous work revealing the molecular adsorption precursor states for O₂,we further explore why there are two nearly degenerate adsorption states on Pb（111） ultrathin films,but no precursor adsorption states existing at all on Mg（0001） and Al（111） surfaces.The reason is concluded to be the different surface electronic structures.For the O₂ dissociation,we consider both the reaction channels from gas-like and molecularly adsorbed O₂ molecules.We find that the energy barrier for O₂ dissociation from the molecular adsorption precursor states is always smaller than that from O₂ gas.The most energetically favorable dissociation process is found to be the same on different Pb（111） films,and the energy barriers are found to be influenced by the quantum size effects of Pb（111） films.     

Ar adsorptions on Al （111） and Ir （111） surfaces： a first-principles study

We investigate the adsorptions of Ar on Al (111) and Ir (111) surfaces at the four high symmetry sites,i.e.,top,bridge,fcc-and hcp-hollow sites at the coverage of 0.25 monolayer (ML) using the density functional theory within the generalized gradient approximation of Perdew,Burke and Ernzerhof functions.The geometric structures,the binding energies,the electronic properties of argon atoms adsorbed on Al (111) and Ir (111) surfaces,the difference in electron density between on the Al (111) surface and on the Ir (111) surface and the total density of states are calculated.Our studies indicate that the most stable adsorption site of Ar on the Al (111) surface is found to be the fcc-hollow site for the (2 × 2) structure.The corresponding binding energy of an argon atom at this site is 0.538 eV/Ar atom at a coverage of 0.25 ML.For the Ar adsorption on Ir (111) surface at the same coverage,the most favourable site is the hcp-hollow site,with a corresponding binding energy of 0.493 eV.The total density of states (TDOS) is analysed for Ar adsorption on Al (111) surface and it is concluded that the adsorption behaviour is dominated by the interaction between 3s,3p orbits of Ar atom and the 3p orbit of the base Al metal and the formation of sp hybrid orbital.For Ar adsorption on Ir (111) surface,the conclusion is that the main interaction in the process of Ar adsorption on Ir (111) surface comes from the 3s and 3p orbits of argon atom and 5d orbit of Ir atom.     

First-principles study of Ar adsorptions on the （111） surfaces of Pd, Pt, Cu, and Rh

In the present paper we give a detailed report on the results of our first-principles investigations of Ar adsorptions at the four high symmetry sites on M （111） （M =Pd, Pt, Cu, and Rh） surfaces. Our studies indicate that the most stable adsorption sites of Ar on Pd （111） and Pt （111） surfaces are found to be the fcc-hollow sites. However, for Ar adsorptions on Cu （111） and Rh （111） surfaces, the most favorable site is the on-top site. The density of states （DOS） is analyzed for Ar adsorption on M （111） surfaces, and it is concluded that the adsorption behavior is dominated by the interaction between 3s, 3p orbits of Ar atoms and the d orbit of the base metal atoms.     

Coadsorption of gold with chlorine on CeO2 (111) surfaces: A first principles study

To investigate the effects of chlorine on the Au/ceria catalysts,the adsorption of gold or chlorine and their coadsorpiton on the stoichiometric and partially reduced CeO₂（111） surfaces are studied from the first principles.It is found that the adsorption of Au is significantly enhanced by the chlorine preadsorption on the stoichiometric CeO₂（111） surface;while on the partially reduced CeO₂（111） surface,the preadsorbed chlorine inhabits the oxygen vacancy（which is the preferred adsorption site for gold）,leading to a CeOCl phase and the dramatical weakening of the Au adsorption.Therefore,chlorine on the CeO₂（111） surface can affect the Au adsorption thus the activity of the Au/CeO₂ catalyst.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Adsorption and Reaction of CO on （100） Surface of SrTiO3 by Density Function Theory Calculation

Adsorption and reaction of CO on two possible terminations of SrTiO3 （100） surface are investigated by the first-principles calculation of plane wave ultrasoft pseudopotentiai based on the density function theory. The adsorption energy, Mulliken population analysis, density of states （DOS） and electronic density difference of CO on SrTiO3 （100） surface, which have never been investigated before as far as we know are performed. The calculated results reveal that the Ti-CO orientation is the most stable configuration and the adsorption energy （0.449eV） is quite small. CO molecules adsorb weakly on the SrTiO3 （100） surface, there is predominantly electrostatic attraction between CO and the surface rather than a chemical bonding mechanism.     

First-principles study on anatase TiO2（101） surface adsorption of NO

In this paper, the stable structure and the electronic and optical properties of nitric oxide （NO） adsorption on the anatase TiO2 （101） surface are studied using the plane-wave ultrasoft pseudopotential method, which is based on the density functional theory. NO adsorption on the surface is weak when the outermost layer terminates on twofold coordinated oxygen atoms, but it is remarkably enhanced on the surface containing O vacancy defects. The higher the concentration of oxygen vacancy defects, the stronger the adsorption is. The adsorption energies are 3.4528 eV （N end adsorption）, 2.6770 eV （O end adsorption）, and 4.1437 eV （horizontal adsorption）. The adsorption process is exothermic, resulting in a more stable adsorption structure. Furthermore, O vacancy defects on the TiO2 （101） surface significantly contribute to the absorption of visible light in a relatively low-energy region. A new absorption peak in the low-energy region, corresponding to an energy of 0.9 eV, is observed. However, the TiO2 （101） surface structure exhibits weak absorption in the low-energy region of visible light after NO adsorption.     

Adsorption of L-Alanine on Cu（111） Studied by Scanning Tunnelling Microscopy

The adsorption of L-alanine on Cu（111） surface is studied by means of scanning tunnelling microscopy under ultra-high vacuum conditions. The results show that the adsorbates are chemisorbed on the surface, and can form a two-dimensional gas phase, chain phase and solid phase, depending on deposition rate and amount. The adsorbed molecules can be imaged as individual protrusions and parallel chains in gas and chain phases respectively. It is also found that alanine can form （2 × 2） superstructure on Cu（111） and copper step facet to （110） directions in solid phase. On the basis of our scanning tunnelling microscopic images, a model is proposed for the Cu（111）（2 ×2）-alanine superstructure. In the model, we point out the close link between （110）-direction hydrogen bond chains with the same direction copper step faceting.     

Adsorption of Perylene on Si(111)(7×7)

We investigate the adsorption of organic molecular semiconductor perylene on(7 × 7) reconstructed Si(111)surface by ultraviolet photoemission spectroscopy.It is observed that seven features that derive from the organic material are located at 0.71,2.24,4.0,5.9,7.46,8.65 and 9.95 eV in binding energy.The theoretical calculation results reveal the most stable adsorption geometry of organic molecule perylene on Si(111)(7 × 7) substrates is at the beginning of deposition.     

Structural Stabilities of Ordered Nb4 Clusters on the Cu（111） and Cu（100） Surfaces

Based on first-principles calculations, we show that very high-density periodic arrays of Nb4 clusters with both the tetrahedron and quadrangle configurations can be stably absorbed on the Cu（111） and Cu（100） surfaces, with the quadrangle configurations more stable than the tetrahedron ones. The strong covalent bonding between atoms within the Nb4 clusters contributes to the stability of Nb4 adsorptions on the Cu surfaces. The energy barriers for the tetrahedron to the quadrangle-Nb4 on Cu（111） and （100） are around 1.21 eV and 0.94 eV/cluster, respectively. The stable adsorption of high-density Nb4 on these surfaces should have important applications.     

Large-Area Self-Assembly of Rubrene on Au（111） Surface

Large-area self-assembly of rubrene has been fabricated on Au（111） surface and studied by scanning tunnelling microscopy. The rubrene monolayer on A u（111） surface is characterized by well-ordered row-like structures similar to the a-b plane of rubrene single crystal. However, the directions of the neighboured molecular rows are opposite to each other. In a two-layer film of rubrene on Au（111） surface, the arrangements of the top molecular rows are determined by the underneath rows, suggesting an orthorhombic crystal structure with a = 1.26 nm, b = 4.36 nm, c = 0.17nm for multilayer ofrubrene on Au（111）.     

A density functional theory study on the adsorption of CO and O2 on Cu-terminated Cu2O （111） surface

The adsorptions of CO and 02 molecules individually on the stoichiometric Cu-terminatcd Cu20 （111） surface are investigated by first-principles calculations on the basis of the density functional theory. The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of-1.69 eV, whereas the 02 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cul site, and has an adsorption energy of -1.97 eV. From the analysis of density of states, it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate. The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption, and overlaps substantially with bands of the adsorbed CO molecule. There is a broadening of the 2π orbital of the 02 molecule because of its overlapping with the Cu 3d orbital, indicating that strong 3d-2π interactions are involved in the chemisorption of the 02 molecule on the surface.     

Comparative study of adsorption characteristics of Cs on the GaN(0001) and GaN(000) surfaces

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.     

First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

Self—Diffusion Mechanisma of ASdatom on Al（001）,（011）and （111） Surfaces

Using the first-principle molecular dynamical calculations,we have studied the adatom self-diffusion mechanisms on fcc Al(001),(011) and (111) surfaces,On each surface,there are several mechanisms,among which there is one favour mechanism with the minimum barrier energy.The atomic exchange mechanism along the [100] direction on the (001) surface,the long bridge hopping mechanism along the [110] direction on the (011) surface,and the bridge hopping mechanism along the [112] directioin on the (111) surface are the favour mechanisms.The activation energy profiles for various self-diffusion mechanisms are studied in details.     

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.     

A Density Functional Study of Atomic Carbon Adsorption on δ-Pu（111） Surface

Adsorption of atomic carbon on 6-Pu（111） surface is investigated systematically using density functional theory with RPBE functional. The adsorption energies, adsorption structures, Mulliken population, work functions, layer and projected density of states are calculated in wide ranges of coverage, which have never been studied before as far as we know. It is found that the hcp-hollow sites is the energetically favorable site for all the coverage range considered. The repulsive interaction is identified, and the adsorption energy decreases with the coverage, while work function increases linearly with the coverage. It is found that the C-Pu interaction is very strong due to the hybridization between the C 2p states and the Pu 5 f , Pu 6p,Pu 6d states of topmost layer Plutonium atoms.     

First-principle study of Mg adsorption on Si（111） surfaces

We have carried out first-principle calculations of Mg adsorption on Si(111) surfaces. Different adsorption sites and coverage effects have been considered. We found that the threefold hollow adsorption is energy-favoured in each coverage considered, while for the clean Si(111) surface of metallic feature, we found that 0.25 and 0.5 ML Mg adsorption leads to a semiconducting surface. The results for the electronic behaviour suggest a polarized covalent bonding between the Mg adatom and Si(111) surface.     

Neutralization process of Xe^q＋ ion grazing on Al（111） surface

A code has been developed to simulate the neutralization and grazing process of slow highly charged ion Xe^q＋ on Al（111） surface under the classical-over-the-barrier model. The image energy gain of Xeq＋ ions are calculated and compared with experiment data. The simulation results of image energy gain are in good agreement with the experiment data. Meanwhile, in the present work, the reflection coefficient of incident Xe^q＋ on Al（111） surface as a function of the incidence angle, energy and charge state is also studied.     

Structural Stabilities of Ordered Arrays of Nb4 Clusters on NaCI（IO0） Surface

Adsorption of ordered （2 × 2） arrays of Nb4 clusters on the insulating surface of NaCI（100） is studied by the first-principles calculations within the density functional theory. The calculations on the relaxed geometries and cohesive energies show that both the tetrahedron and quadrangle-Nb4 can be stably adsorbed on this substrate, which may have important applications. The adsorption of quadrangle-Nb4 on the NaCl（100） surface is more stable than that of tetrahedron-Nb4. Both the Nb4 clusters studied and a single Nb atom prefer the top site of the Cl atom in the NaCl（100） surface. Electronic structure analysis suggests that the interactions between the Nb4 clusters and the substrate are weak.