Novel approaches to high-density perpendicular recording media

Two different approaches to reduce the intermediate layer (IL) thickness in perpendicular recording media are proposed. Such a reduction in IL thickness could lead to improvement in writability and recording performance. The first approach involved the introduction of a magnetic intermediate layer (MIL), to obtain C-axis growth. Media with CoCr alloy layer as the MIL were studied. Reasonably good C-axis growth with a Δθ₅₀ of about 3.8° could be obtained for MIL thickness of about 10 nm. Noise could be controlled by introducing exchange-breaking layers. The other approach involved the use of crystalline soft underlayers (SUL) to obtain suitable growth conditions for the recording layers. For this purpose, CoFeTaCr alloys with a FCC(1 1 1) texture were prepared. A good C-axis dispersion in the recording layer with a Δθ₅₀ of about 3.1° could be obtained for IL thickness of about 5 nm. The present study indicates that the recording medium deposited on crystalline SUL is relatively noisier than that deposited on amorphous SUL. Reducing the noise of the crystalline SUL is a way towards higher areal densities.     

Thin film properties by facing targets sputtering system

In this study, film thickness distribution and c-axis crystalline orientation of deposited thin films were studied after preparing Co–Cr thin films, a promising ultra-high density perpendicular magnetic recording media, with a facing targets sputtering (FTS) apparatus. Electrical discharge characteristics needed for the optimum operation of sputter device was also studied in order to prepare thin films of superior c-axis crystalline orientation with FTS method (apparatus) in which thin film of fine quality can be formed because temperature increase of substrate due to the bombardment of high-energy particles can be restrained.As a result of the study, it is confirmed that the FTS method can give stable working under broad magnetic field and range of gas pressure and stable electrical discharge under low Ar gas pressure. Film thickness of prepared thin film shows fairy regular distribution and could obtain good thin films whose dispersion angle of c-axis crystalline orientation is about 3.5°.     

Preparation and recording characteristics of granular-type perpendicular magnetic recording media with thin intermediate layer

Granular-type media with thin Ru intermediate layer were prepared on a highly oriented high-B_s FeCo soft underlayer (SUL). A CoPt–TiO₂ recording layer on a Ru intermediate layer of only 2 nm had high-crystal orientation, high H_c of 6.5 kOe, and a high squareness ratio (SQ) of 0.99. The magnetic property of the SUL was also good. The recording performance was measured for the media with different Ru intermediate thicknesses by using a single-pole-type (SPT) head. The media had large reproduced output even for the Ru intermediate layer thickness of 2 nm.     

Study of magnetization reversal of Co/Pd bit-patterned media by micro-magnetic simulation

Bit-patterned media based on a single-bit-per-island may be a promising candidate for perpendicular magnetic recording at the Tb/in² level because they could provide a lower noise and higher density. The understanding of magnetization reversal processes in such patterned media is important. In this work, the range of single domain island size based on Co/Pd bit-patterned media was determined. Demagnetization effect, dipolar interactions and switching field distribution (SFD) for bit-patterned media were quantitatively studied by the simulation based on Landau-Lifshitz-Gilbert equation. The total hysteresis loops and SFD were comparable with the experiment ones. The SFD increased from 2σ=1.2 kOe (as the calculated intrinsic SFD) to the experimental value of 1.9 kOe due to dipolar interactions which is in a good agreement with the experimental results (2.0 kOe). Optimized patterned structure with a minimized SFD and maximized data storage densities was found to have an island size of 10 nm and islands separation of 20 nm. The calculated ratio of SFD/H_c (H_c: the coercivity) is 9.2%, which is below the threshold of 10% for 1 Tb/in² pattern media.     

Ru-O/Ru hybrid type of underlayer for CoPtCr-SiO2 perpendicular recording media on flexible tape

Ru/CoPtCr-SiO₂ bilayer prepared at 4 and 26 mTorr of Ar gas pressure for the deposition of Ru and CoPtCr-SiO₂ layers, respectively, exhibits better magnetic properties suitable for perpendicular magnetic recording media when they are deposited at room temperature on a Pt seed layer prepared at 450 °C. The Ru-O seed layer fabricated by a reactive sputtering method improves the Ru (0 0 1) texture deposited on a Ru-O layer. The Ru-O/Ru hybrid type of underlayer causes the improvement of the c-axis orientation of CoPtCr crystallites in the CoPtCr-SiO₂ layer deposited on it. Fine granulation of magnetic grains in the CoPtCr-SiO₂ layer is also attained when they are deposited on the Aramid type of flexible tape substrates.     

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

VO₂ thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO₂ thin films on glass substrates. X-ray diffraction studies showed that the VO₂ thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO₂ deposition were optimized to grow highly b-axis oriented VO₂ thin films. The metal-insulator transition properties of the VO₂ film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.     

Grain size reduction and recording performance improvement by using NiW as a partial interlayer in CoCrPt/SiO2 recording medium

We report the effect of NiW, as an interlayer to partially replace Ru, on the microstructure, magnetic properties, and recording performance of CoCrPt/SiO₂ perpendicular recording media. It was found that the full width at half maximum of the rocking curves of the Co (0002) peak changed little with NiW thickness up to 10 nm. However, further increase of NiW thickness caused a larger c-axis dispersion. The grain size of the CoCrPt/SiO₂ recording layer was reduced from 10.9±1.8 nm for the films without NiW to 7.7±1.5 nm for films with 10-nm NiW as a partial interlayer. The coercivity, H _c, nucleation field, H _n, and the reverse overwrite, Rev_OV, of the CoCrPt/SiO₂ layer did not change much (less than 15%) with increased NiW thickness. However, it did affect the switching field distribution of the CoCrPt/SiO₂ layer (more than double). The recording performance was improved by using NiW as a partial interlayer, which was mainly attributed to the reduced grain size.     

Diffusion of gallium into cadmium sulphide

Measurements of the Ga diffusion into CdS, in the presence of exces Ga metal, using optical and mixroprobe analyser techniques are reported. A reaction layer of CdGa₂S₄ forms on the CdS crystals below 1240±20 K. Above this temperature the reaction layer is liquid. The Ga diffusion is concentration dependent and also orientation dependent with the faster diffusion perpendicular to the hexagonal c-axis of CdS. The anisotropy of the activation energy was calculated to be 0.20±0.06 eV. In the temperature range 940–1240K the linearly concentration dependent diffusion yielded activation energy values for defect motion of 2.39±0.13 eV perpendicular to the c-direction and 2.21 ±0.13 eV parallel to the c-direction.     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

The crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films mediated by the intermediate layer of LaNiO3

c-Axis-oriented and (1 1 7)-oriented Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films are successfully controlled by the intermediate layer of LaNiO₃ (LNO) with chemical solution deposition (CSD), respectively. X-ray diffraction (XRD) demonstrates that the structure and orientation of LNO thin films have a strong effect on the orientation of BLT thin films. Scanning electron microscopy suggests that BLT thin films on LNO electrode exhibit crack-free, uniform size grains and dense microstructure. A crystalline orientation dependent remanent polarization is observed in BLT thin films, and it is found that the remanent polarization (2P_r) of (1 1 7)-oriented films is larger than that of c-axis-oriented films. Our research directly demonstrates that the vector of the main spontaneous polarization in these layered perovskite materials (BLT) is along a-axis.     

The microstructure and magnetic properties of electrodeposited Co–Pt thin films on Ru buffer layer

For high-density magnetic recording media, this study examined the crystal structure and the texture of electrodeposited cobalt–platinum (Co–Pt) films on Ru buffer layer. A 15-nm-thick Co–Pt film exhibited very high out-of-plane coercivity and squareness, which were 6248 Oe and 0.89, respectively. The coercivity, H_c, of Co–Pt films grown on Ru buffer layer decreased significantly with increasing thickness, possibly due to the lattice misfit of 5.4% between Co–Pt and Ru, leading to the decrease of perpendicular magnetic anisotropy (PMA) of Co–Pt films as indicated by the observed hexagonal-closed-packed (HCP) (1 1¯ 0 1) plane of Co–Pt films. According to nano beam diffraction pattern (NBDP), however, Co–Pt film grown on Ru layer of HCP exhibited mixed HCP and FCC phases. Also, cross-sectional TEM image suggests that the high PMA may result from the columnar structure of physically isolated Co–Pt grains with the c-axis perpendicular to the film plane.     

Crystal orientation dependence of the critical current density in a-axis- and c-axis-oriented MgB2 films

We have investigated the critical current density for MgB₂ films having various crystal orientations prepared by using a hybrid physical-chemical vapor deposition system. An enhancement of the critical current density is clearly presented in MgB₂ films with an a-axis or a b-axis orientation rather than a c-axis orientation. X-ray diffraction patterns reveal a suppression of c-axis orientations while a (100) orientation becomes dominant, and the surface morphology of the a-axis-oriented film shows that the orientation of the c-axis-oriented MgB₂ grains parallel to the plane of the substrate. As the a-axis orientation becomes more dominant in the MgB₂ films, the field performance of the critical current density clearly becomes better. These results suggest that the synthesis of MgB₂ with high ab-plane orientations is one of the keys to enhancing the critical current density in MgB₂.     

Magnetic properties and characterization of CoCrM/TiCr/Si films produced by pulsed laser deposition

A series of nanogranular CoCrM/TiCr thin films have been fabricated by pulsed-laser deposition on Si(1 1 1) substrates at 450–500 °C. The crystal structure and magnetic properties of these films were investigated. The transmission electron microscope images with selected area diffraction and X-ray diffraction showed that the structure of as-prepared films is dependent on laser energy and deposition temperature. It was found that the microstructure of CoCrM/TiCr films consisted of fine dispersive crystal grains, while the preferential c-axis orientation of films deteriorated when the thickness of CoCr-alloy layer increased along with metal doping into the CoCr films. The magnetic properties of CoCrM/TiCr films formed on Si are strongly dependent on the thickness of magnetic layer, grain structure, and grain shape. Enhancement of coercivity and squareness of the laser-deposited film is probably due to the improvement in the magnetocrystalline anisotropy energy and the reduction in the thickness of magnetic layer.     

Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications

Metal?Cferroelectric?Cinsulator?Csemiconductor (MFIS) structures with BaTiO₃ (BTO) as a ferroelectric film and SrTiO₃ (STO) as an insulating buffer layer were fabricated on p-type Si(001) substrates using an ion beam sputter deposition technique. The effect of out-of-plane orientation on the electrical properties of the MFIS structures, including leakage current density and memory window behavior, were studied using the growth of the BTO ferroelectric film on Si substrate buffered by highly c-axis-oriented and random-oriented STO buffer layers. The experimental results show that the out-of-plane orientations of the BTO films were almost identical to those of the STO buffer layers. The MFIS structure with a high c-axis orientation exhibited a maximum clockwise capacitance-voltage memory window of 1.17?V with a low leakage current of 1.05×10^?7?A/cm² at an applied voltage of 4?V, which is a significant improvement compared to the MFIS structure with a random orientation. The difference in the electrical properties of the MFIS structures with both types of orientation is discussed in detail. The results obtained from this study indicate that the Au/BTO/STO/p-Si MFIS structure with high c-axis orientation has good potential for use in non-volatile memory applications.     

Switching field distribution of magnetic fine particles

In the magnetic recording media the switching field distribution (SFD) is an important micromagnetic characteristic curve. However, in general case, methods of assessing SFD have not presented a reasonable relation between the macroscopic measurements and the microscopic properties of the system. The degree of alignment of particles easy axis in a texture and the angular dependence of switching field are two fundamental factors for the distribution function. A technique for determining the switching field distribution curve due to these factors is reported. This technique is performed for textured iron fine particles and samples of CrO₂ and γFe₂O₃ commercial tapes. The distribution differs from a gaussian function. However, the width and the mean switching field equal to twice of the width of dM_r/dH curve and the remanent coercivity, respectively. Furthermore, it is shown that the width of the switching field distribution decreases with increasing the degree of easy axis orientation.     

Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

In this study, the influence of the crystal orientation on the electrical properties of sputter deposited aluminium nitride (AlN) thin films on low temperature co-fired ceramics (LTCC) substrates is investigated. The degree of c-axis orientation can be tailored by the deposition conditions such as plasma power, gas pressure and gas composition in the deposition chamber. Due to the large surface roughness of LTCC substrates (R_a = ∼0.4 μm) the quality of thin films is lower compared to silicon. Between areas of columnar grains arranged perpendicular to the LTCC surface, defects like voids are generated due to the wavy surface characteristics. The impact of crystal orientation and temperature up to 400 °C on the electrical performance is evaluated, as these layers are targeted as potential candidates for dielectric heat spreaders on multilayered ceramic substrates for high frequency applications. These AlN thin films having a good c-axis orientation exhibit lower leakage current levels over the complete temperature range compared to those with a poor alignment with respect to this crystallographic plane. The leakage current behaviour, however, is dominated according to the Pool-Frenkel electron emission independent of the degree of c-axis orientation.     

Superlattice CoCrPt/Ru/CoFe structure fabricated by pulsed laser deposition

The synthetic antiferromagnets (SAF) have been used in spin-valve sensor in data storage industry [1]. We report a new hard/Ru/soft sandwich structure (SHBL) fabricated by pulsed lased deposition to replace current single layer structure for information recording application. SHBL consists of two magnetic layers separated by thin nonmagnetic layers, typically with Ru layers of 0.7-1.2 nm, through which antiferromagnetic coupling is induced. Varying the relative thickness of the magnetic layers, the spacer layers, and the type of magnetic materials can alter magnetic properties of CoCrPt/Ru/CoFe superlattice. The coercivity H_c and grain size of magnetic layer is also dependent on the laser fluence. High laser fluence results in both small grain size and high H_c. The observed phenomena are related to high quenching and deposition rates during PLD at high fluence, resulting in more pronounced phase segregation.     

Optical properties of epitaxial CuGaS2 layers on Si(111)

CuGaS₂ films epitaxially grown on Si(111) substrates by molecular beam epitaxy from elemental sources were investigated by various optical methods. Photoluminescence studies at low temperatures reveal a strong dependence of the near-bandgap emission on the composition. Ga-rich films show predominantly donor–acceptor pair recombination, while additionally free-to-bound and excitonic transitions are found for stoichiometric and Cu-rich films. Low lineshape broadening of the free excitonic transitions FX^A and FX^B/C in the photoreflectance spectra up to room temperature demonstrates the high crystal quality. The assignment of these transitions is confirmed by polarisation dependent photocurrent measurements making use of the optical selection rules and the three different growth directions for the c-axis of CuGaS₂ relative to the Si-substrate. A fit to the photocurrent measurements yields the relative volume fraction of each c-axis orientation.     

n型掺杂层结构对n-i-p型微晶硅电池性能和光致衰退特性的影响

采用射频化学气相沉积法,制备了一系列具有不同晶化率n型掺杂层的n-i-p结构微晶硅薄膜太阳电池.发现本征层的结构很大程度上依赖于n型掺杂层的结构,特别是n/i界面处的孵化层厚度以及本征层的晶化率.该系列太阳电池在100 mW/cm²的白光下照射400 h,实验结果证实了本征层晶化率最大（X_c(i)=65%）的电池性能表现出最低的光致衰退率.拥有非晶/微晶过渡区n型掺杂层的电池（本征层晶化率X_c(i)=54%）分别 关键词： 微晶硅 n-i-p结构太阳电池 光致衰退 晶化率     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.