Field effect transistors for terahertz detection - silicon versus III–V material issue

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III–V GaAs and GaN HEMTs and silicon MOSFETs.     

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3” in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows for the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single- or dual-band IR and THz detectors.We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150–300-GHz subterahertz and infrared ranges from 3 to 10 μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275 GHz, respectively.     

THz detectors based on Si-CMOS technology field effect transistors – advantages,limitations and perspectives for THz imaging and spectroscopy

Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.     

Terahertz response of thin-film YBCO bolometers

The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10^?9 W/ $ \sqrt {Hz} $ . The feasibility of further increasing the sensitivity of the detectors is discussed.     

Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors

Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures are investigated at liquid-helium temperatures and for magnetic fields of up to 14 T. The magnetic-field dependence of the transistor resistance is used for evaluation of the electron density and mobility in the transistor channel. The electron mobility and concentration determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz radiation in 0.15 μm gate length GaAs transistors and for the determination of the parameters of other field-effect transistors processed for resonant and voltage tunable detection of THz radiation. From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 138–145. Original English Text Copyright ? 2004 by Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur, Smirnov, Gavrilenko, Antonov, Morozov. This article was submitted by the authors in English.     

Semiconductor detectors and focal plane arrays for far-infrared imaging

The detection of far-infrared (far-IR) and sub-mm-wave radiation is resistant to the commonly employed techniques in the neighbouring microwave and IR frequency bands. In this wavelength detection range the use of solid state detectors has been hampered for the reasons of transit time of charge carriers being larger than the time of one oscillation period of radiation. Also the energy of radiation quanta is substantially smaller than the thermal energy at room temperature and even liquid nitrogen temperature. The realization of terahertz (THz) emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. Development of semiconductor focal plane arrays started in seventies last century and has revolutionized imaging systems in the next decades. This paper presents progress in far-IR and sub-mm-wave semiconductor detector technology of focal plane arrays during the past twenty years. Special attention is given on recent progress in the detector technologies for real-time uncooled THz focal plane arrays such as Schottky barrier arrays, field-effect transistor detectors, and microbolometers. Also cryogenically cooled silicon and germanium extrinsic photoconductor arrays, and semiconductor bolometer arrays are considered.     

On‐chip THz spectrometer for bunch compression fingerprinting at fourth‐generation light sources

The layout of an integrated millimetre‐scale on‐chip THz spectrometer is presented and its peformance demonstrated. The device is based on eight Schottky‐diode detectors which are combined with narrowband THz antennas, thereby enabling the simultaneous detection of eight frequencies in the THz range on one chip. The size of the active detector area matches the focal spot size of superradiant THz radiation utilized in bunch compression monitors of modern linear electron accelerators. The 3 dB bandwidth of the on‐chip Schottky‐diode detectors is less than 10% of the center frequency and allows pulse‐resolved detection at up to 5 GHz repetition rates. The performance of a first prototype device is demonstrated at a repetition rate of 100 kHz at the quasi‐cw SRF linear accelerator ELBE operated with electron bunch charges between a few pC and 100 pC.     

平面天线在场效应晶体管太赫兹探测器中的应用

为了提高场效应晶体管太赫兹探测器的响应度并降低噪声等效功率,需要对探测器集成平面天线的结构进行合理设计与优化,本文对集成平面天线结构的场效应晶体管太赫兹探测器的研究进行了深入调研。首先,对场效应晶体管太赫兹探测器的工作原理进行了分析,介绍了集成平面天线如何解决耦合太赫兹波效率低的问题。然后,介绍了一些常用的平面天线结构,包括偶极子天线、贴片天线、缝隙天线、grating-gate和其他类型的结构,比较了各种天线的性能以及引入后对太赫兹探测器响应度的影响。通过对比不同天线结构的探测器响应度和噪声等效功率等参数指标,发现:采用平面天线结构之后,场效应晶体管太赫兹探测器的响应度有了大幅度的提升,各种类型的天线对探测器响应度都有不同程度的提升。本文着重介绍了几种集成于场效应晶体管的平面天线结构,包括各种天线的性能和研究进展,最后分析了场效应晶体管太赫兹探测器存在的问题和发展趋势。     

飞秒超强激光驱动太赫兹辐射特性的实验研究

强太赫兹源是太赫兹科学技术发展的关键,其中大能量强场太赫兹脉冲源在超快物态调控、新型电子加速器等领域具有重要的应用前景.超快超强激光与等离子体相互作用是近年来发展起来的一种新型的强场太赫兹辐射产生途径.本文报道了利用超强飞秒激光脉冲与金属薄膜靶作用产生太赫兹辐射的实验结果,研究了激光能量和离焦量对靶后太赫兹辐射能量的影响,并通过监测激光背向散射光谱,定性揭示了其变化规律与不同光强下的电子加热机制的相关性.实验表征了太赫兹辐射的频谱、偏振及聚焦光斑情况.测量结果表明,实验产生了脉冲能量达458μJ、聚焦场强高达GV/m量级的超宽带太赫兹辐射,为开展极端太赫兹脉冲与物质相互作用研究提供了一种新的强场太赫兹光源.     

超高灵敏度太赫兹超导探测技术发展

太赫兹波段占有宇宙微波背景(CMB)辐射以后宇宙空间近一半的光子能量,该波段在天文学研究中具有不可替代的作用,因此太赫兹天文学的研究,具有极其重要的科学意义。本文系统介绍了基于超高灵敏度太赫兹超导探测技术的太赫兹相干探测器发展状况,包括超导隧道结混频器(SIS)和超导热电子混频器(HEB),以及以超导动态电感探测器(MKIDs)和超导相变边缘探测器(TES)为代表的非相干探测器的研究。在此基础上,展望了该领域未来发展趋势,对我国太赫兹天文探测技术的发展具有一定的参考意义。     

High power THz source based on coherent radiation of picosecond relativistic electron bunch train

Tunable and compact high power terahertz (THz) radiation based on coherent radiation (CR) of the picosecond relativistic electron bunch train is under development at the Tsinghua accelerator lab. Coherent synchronization radiation (CSR) and coherent transition radiation (CTR) are researched based on an S-band compact electron linac, a bending magnet or a thin foil. The bunch train’s form factors, which are the key factor of THz radiation, are analyzed by the PARMELA simulation. The effects of electron bunch trains under different conditions, such as the bunch number, bunch charges, micro-pulses inter-distance, and accelerating gradient of the gun are investigated separately in this paper. The optimal radiated THz power and spectra should take these factors as a whole into account.     

周期极化铌酸锂中光整流THz波辐射

从理论上详细研究飞秒激光在周期极化铌酸锂(PPLN)晶体中由光整流效应产生的THz波辐射.着重研究THz波辐射场的频域场、时域场和频谱宽度的分布.并详细讨论辐射场脉冲持续时间、幅度、频谱宽度随晶体长度和辐射角的变化. 关键词： PPLN 光整流 THz波     

高速太赫兹探测器

太赫兹(terahertz,THz)技术在高速空间通信、外差探测、生物医学、无损检测和国家安全等领域具有广阔的应用前景.能响应1 GHz调制速率以上THz光的高速THz探测器是快速成像、THz高速空间通信、超快光谱学应用技术和THz外差探测等领域的核心器件.传统的THz热探测器难以实现高速工作,而基于半导体的THz探测器在理论上可实现高速工作.光导天线具有超快的响应速度,可实现常温和宽谱探测;肖特基势垒二极管混频器、超导-绝缘体-超导混频器和超导热电子混频器具有转换效率高、噪声低等优点,可用于高速THz空间外差和直接探测;基于高迁移率二维电子气的天线耦合场效应晶体管灵敏度高、阻抗低,可实现常温高速THz探测;THz量子阱探测器是一种基于子带间跃迁原理的单极器件,非常适合高频和高速探测应用,亚波长金属微腔耦合机理可显著提高器件的工作温度及光子吸收效率.本文对上述几种高速THz探测器进行了综述并分析了各种探测器的优缺点.     

THz光谱技术在炸药及其相关材料检测中的应用进展

太赫兹（THz）光谱技术近年来在航空航天、生命科学、安全检测等领域的应用进展迅速.由于许多炸药及其相关材料在THz波段具有特征吸收，许多非金属、非极性材料对THz波是透明的。且THz波具有低能性，THz光谱技术在安检中具有巨大的应用潜力．文章介绍了国际上THz光谱技术在炸药及其相关材料研究中的现状和进展及文章作者在炸药及其相关材料THz光谱研究方面的成果，讨论了THz技术应用于安全检测领域面临的挑战.     

Study on the characteristics of linac based THz light source

There are many methods based on linac for THz radiation production.As one of the options for the Beijing Advanced Light, an ERL test facility is proposed for THz radiation.In this test facility, there are 4 kinds of methods to produce THz radiation: coherent synchrotron radiation (CSR), synchrotron radiation (SR), low gain FEL oscillator, and high gain SASE FEL.In this paper, we study the characteristics of the 4 kinds of THz light sources.     

Playing with quantum Hall effects and single-electron-tunneling effects

The usefulness of quantum Hall effect (QHE) conductors and quantum dot (QD) devices is revealed by reviewing five remarkable effects. The first is the sensitive detection of terahertz (THz) radiation by QHE conductors. The second is the imaging of THz emission from non-equilibrium carriers in QHE conductors, by using scanning THz microscopes. The third is the single-photon detection of THz radiation in strong magnetic fields, which is carried out by incorporating a QHE electron system into a QD. Individual events of single-THz-photon absorption within the QD via cyclotron resonance cause the QD to electrically polarize, which, in turn, is detected as switches of the tunnel conductance through the QD. The fourth is the single-photon detection of THz radiation by using double QDs in the absence of a magnetic field. Both of the photon detectors are implemented in gate-voltage-induced lateral GaAs/AlGaAs QDs, and exploiting the extraordinary sensitivity of single-electron transistors to the charge. The fifth is the coherent control of nuclear spins in QHE conductors. Nuclear spins are (i) electrically polarized by unequally populating spin-split QHE edge channels via the hyperfine interaction, (ii) coherently controlled via pulsed nuclear magnetic resonance induced by local RF magnetic fields, and (iii) finally detected by the edge channels through resistance change of the Hall device. The controlled nuclear spins are limited to those along the edge channels, on the order of 10⁹.     

TERA-MIR radiation: materials,generation, detection and applications

This special edition is dedicated to original papers covering topics with the areas of interest of COST ACTION MP1204 whose main objective is to advance novel materials, concepts and device designs for generating and detecting THz (0.3–10 THz) and Mid Infrared (10–100 THz) radiation using semiconductor, superconductor, metamaterials and lasers and to beneficially exploit their common aspects within a synergetic approach. The results achieved benefit from the unique networking and capacity-building capabilities provided by the COST framework to unify these two spectral domains from their common aspects of sources, detectors, materials and applications. We are building a platform to investigate interdisciplinary topics in Physics, Electrical Engineering and Technology, Applied Chemistry, Materials Sciences and Biology and Radio Astronomy. In this sense THz and MIR are considered jointly, the driving force for both regimes being applications. The main emphasis of the research presented here is on new fundamental material properties, concepts and device designs that are likely to open the way to new products or to the exploitation of new technologies in the fields of sensing, healthcare, biology, and industrial applications. End users are: research centres, academic, well-established and start-up companies and hospitals. The strong coupling of THz radiation and material excitations has potential to improve the quantum efficiency of THz devices.     

Cherenkov Water Detectors in Particle Physics and Cosmic Rays

Among various types of Cherenkov detectors (solid, liquid and gaseous) created for different studies, the most impressive development was gained by water detectors: from the first detector with a volume of several liters in which the Cherenkov radiation was discovered, to the IceCube detector with a volume of one cubic kilometer. The review of the development of Cherenkov water detectors for various purposes and having different locations ? ground-based, underground and underwater–is presented in the paper. The prospects of their further development are also discussed.     

太赫兹半导体探测器研究进展

太赫兹（THz）探测器是THz技术应用的关键器件之一．基于半导体的全固态THz量子阱探测器（THzQWIP）具有探测响应速度快、制作工艺成熟、体积小和易集成等优点．文章简要介绍了THz探测器的分类和特点，重点介绍了THzQWIP的工作原理和研究进展．