THz detectors based on Si-CMOS technology field effect transistors – advantages,limitations and perspectives for THz imaging and spectroscopy |
| |
Authors: | J Marczewski D Coquillat W Knap C Kolacinski P Kopyt K Kucharski J Lusakowski D Obrebski D Tomaszewski D Yavorskiy P Zagrajek R Ryniec N Palka |
| |
Institution: | 1. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland;2. Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier, France;3. Inst. of Radioelectronics and Multimedia Technology, Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland;4. Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw, Poland;5. Inst. of Optoelectronics, Military University of Technology, ul. gen. Witolda Urbanowicza 2, 00-908 Warsaw, Poland;6. Institute of High Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland |
| |
Abstract: | Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process. |
| |
Keywords: | Submillimeter wave detectors THz detectors THz imaging THZ spectroscopy CMOS technology |
本文献已被 ScienceDirect 等数据库收录! |
|