共查询到16条相似文献,搜索用时 140 毫秒
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根据弹性理论和多晶膜的屈服强度公式,计算了附着在基体上体心立方多晶薄膜中不同取向晶粒中的应变能密度.结果表明:1)在屈服之前,对Fe和Ta两种薄膜,4个最小的应变能密度对应的晶粒取向依次为(100),(510),(410)和(511);对Cr,Mo,Nb和V四种薄膜,4个最小的应变能密度对应的晶粒取向依次为(111),(332),(322)和(221);对W膜,应变能密度与晶粒取向无关.2)在屈服的体心立方多晶膜中,4个最小的应变能密度对应的晶粒取向依次为(100),(111),(110)和(411).从
关键词:
体心立方多晶薄膜
晶粒取向
应变能密度
织构 相似文献
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用透射电子显微镜(TEM)和x射线衍射(XRD)方法对经300℃,2h退火的Ag和Cu自由膜和Si基体上的Ag和Cu附着膜的异常晶粒生长和织构变化进行了实验研究.XRD分析表明:Ag和Cu沉积膜均有(111)和(100)择优取向.但经退火处理后,Ag和Cu自由膜的(111)织构稍有加强.相反,Si基体上的Ag和Cu附着膜的(100)和(110)织构明显加强,同时用TEM在Cu附着膜中观察到了两个(110)和四个(211)取向的异常大晶粒.根据表面能和应变能的各向异性对实验结果进行了分析. 相似文献
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用sol—gel工艺直接在(111)Pt/Ti/SiO2/Si衬底上分别制备了62%a/b轴择优、65%(014)/(104)择优、高c轴择优取向生长的Bi3.15Nd0.85Ti3O12(BNdT)铁电薄膜。发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向。从而证实BNdT中自发极化矢量P,靠近a轴。透射电镜观察表明,非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面。而c轴择优取向薄膜中的晶粒细小且主要呈等轴状。讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制。 相似文献
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为了制作能满足YBCO涂层导体(coated conductor)所需要的高强度、低磁性的立方织构基带,本工作用粉末冶金方法制作了Ni-5at%W合金基带.为评估基带中立方织构的发展,用March-Dollase函数对各种热处理样品的择优取向度进行了研究,结果与用X射线极图法和电子背散射衍射法得到的结果基本一致.研究结果表明,在实验中所用的工艺参数范围内,随总加工率和热处理温度的提高,基带中立方织构百分数明显增高.提高总加工率实际增加了冷加工样品中立方织构晶粒或立方核心的数量.实验中得到了较好的和实用的工艺制度,用这种工艺可以制作出具有99%~100%立方织构百分数,并具有很好一致取向度的Ni5W基带. 相似文献
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采用直流磁控溅射方法成功地制备了Al膜,研究了退火温度对Al膜表面形貌、晶体结构、应力、择优取向及反射率的影响。研究表明:不同退火温度的薄膜晶粒排布致密而光滑,均方根粗糙度小。XRD测试表明:不同温度退火的铝膜均成多晶状态,晶体结构为面心立方,退火温度升高到400 ℃时,Al膜的应力最小达0.78 GPa,薄膜平均晶粒尺寸由18.3 nm增加到25.9 nm;随着退火温度的升高,(200)晶面择优取向特性变好。薄膜紫外-红外反射率随着退火温度的升高而增大。 相似文献
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利用扫描隧道显微镜(STM)系统地研究了C60薄膜在GaAs(001)表面的异质外延生长.在GaAs(001)2×4-β相表面,观察到C60薄膜以非密排面进行生长,并在生长中有结构相变产生.实验数据表明,薄膜下层面心立方(fcc)的晶格常数比C60晶体的晶格常数要大13%;而薄膜的表层结构则展示了非理想的六角密堆(hcp)结构,其表面为hcp(1100)面,生长过程是非理想的层状生长模式.在GaAs(001)-c(4×4)衬底上,C60薄膜的表面仍然是fcc(111)面,其结构参数与C60晶体一致,但C60薄膜采用了三维模式进行生长
关键词: 相似文献
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C.V. Thompson 《Interface Science》1998,6(1-2):85-93
Grain growth in thin films is usually abnormal, leading not only to an increase in the average grain size, but also to an evolution in the shape of the grain size distribution and to an evolution in the distribution of grain orientations. The latter can be driven by surface, interface or strain energy minimization, depending on film and substrate properties and on deposition conditions, and can lead to different final textures depending on which energy dominates.In semiconductor films, as in other materials, grain growth stagnation coupled with texture-selective driving forces leads to secondary grain growth, the rate of which is higher in thinner films. Self ion-bombardment enhances the rate of pre-stagnation grain growth, and doping of Si with electron donor leads to enhanced pre-stagnation grain growth as well as surface-energy-driven secondary grain growth. The effects of ion-bombardment and dopants on grain growth in Si can be understood in terms of associated increases in point defect concentrations and the effects of point defects on grain boundary mobilities. 相似文献
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采用直流磁控溅射工艺, 在一定条件下通过控制溅射时间, 在钠钙玻璃上制备了不同厚度的用于Cu(Inx, Ga1-x)Se2薄膜太阳电池背接触材料的Mo薄膜, 并利用X射线衍射 (XRD)、场发射扫描电子显微镜 (SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系; 随厚度的增大, Mo薄膜 (110) 和 (211) 面峰强均逐渐增大, 择优生长从(110)方向逐渐向 (211)方向转变, 方块电阻值只随 (110) 方向上的生长而急剧减小直到一特定值约2 Ω/⇑, 电导率随薄膜的 (110) 择优取向程度的降低而线性减小直到一特定值约0.96×10-4 Ω·cm; Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构, 并处于拉应力态, 其内部应变随薄膜厚度的增大而减小.
关键词:
Mo薄膜
CIGS背接触
厚度
微结构 相似文献
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S. Neretina R. A. Hughes G. Stortz J. S. Preston P. Mascher 《Applied Physics A: Materials Science & Processing》2011,102(2):259-264
Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains,
but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting
an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused
ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent
and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain
structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain
structure. 相似文献
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Effect of thickness on the microstructure of GaN films on Al2O3 (0001) by laser molecular beam epitaxy 下载免费PDF全文
Heteroepitaxial GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films. 相似文献
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Thomas Lampke Author Vitae Bernhard Wielage Author VitaeAuthor Vitae Annette Leopold Author Vitae 《Applied Surface Science》2006,253(5):2399-2408
Electroplated nickel dispersion films with incorporated hard particles, primarily titanium oxide, were studied. A sufficient dispersion of nanometre-scaled particles in Watts solution was reached by application of ultrasonic energy to the galvanic bath. Crystal morphology, mean grain size and formation of textures were examined by electron backscattering diffraction (EBSD), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The typical columnar structure of pure Ni films was refined by means of ultrasound. Incorporation of micron-sized TiO2 particles generates additional nucleation surfaces in contrast to SiC particles. Textures of the subsequent columnar nickel crystals change from 〈2 1 1〉 (silent condition) or 〈1 1 0〉 (ultrasonic condition) fibre textures in growth direction to 〈1 0 0〉 and 〈1 1 1〉 textures under the influence of nanoparticle incorporation. Moreover, nanoparticles remarkably decrease the grain size and grain aspect ratio. Their incorporation takes place inside the crystals as well as between grains. 相似文献
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蒙特卡罗(MC)方法被广泛应用于模拟金属材料在退火过程中的静态再结晶行为. 在已有两相材料晶粒长大MC模型基础上, 引入形核阶段, 综合考虑再结晶晶粒吞并形变晶粒和再结晶晶粒竞争长大两种情况, 建立了退火时两相合金再结晶MC模型.结合电子背散射衍射所测 初始晶粒形貌、相成分、晶体学取向及应变储能相对值, 该模型被应用于TC11钛合金退火过程中的微观组织及织构演变模拟.结果表明, 所建模型能够较好体现退火过程中两相晶粒的形核及晶粒长大行为. 与β相相比较, α相具有较低的再结晶速率和较高的晶粒长大速率, 前者主要归结于α相较低的初始应变储能, 后者则体现了该条件下初始组织形貌、分布及两相比例对晶粒长大具有重要影响; 由于非均匀形核的影响, 模拟得到的再结晶速率变化与 假设均匀形核的Johnson-Mehl-Avrami-Kolmogorov 再结晶方程存在明显差异.同时, 两相的基本织构特征在退火过程中无明显变化, 但织构强度增加.
关键词:
两相钛合金
再结晶
蒙特卡罗方法
织构 相似文献