基于超导储能脉冲变压器的多模块脉冲电源设计

为了探索一种更加紧凑的导轨型电磁推进基础实验用脉冲电源,以实验室现有高温超导储能脉冲变压器为单元模型,在单谐振电路脉冲成形方案的基础上,设计了环形结构的多模块脉冲电源,分析了环形结构中考虑互感的多模脉冲电源电路的充放电过程。通过对八模块环形结构脉冲电源进行仿真分析,得到了接近150kA的电流脉冲,原边电压限制13kV左右。可以得出,利用单谐振电路的多模块超导储能脉冲变压器并联放电方式,可以实现大电流脉冲的输出的要求,而且环形结构中各线圈存在的互感更有利于多模块脉冲电源。     

全钒液流电池充放电测试系统设计

针对以太网技术在高速图像传输中常见的带宽利用率低,传输协议受限的问题,设计了一种基于可编程逻辑器件FPGA实现千兆以太网传输系统的方案,分析了基于IEEE802.3标准的以太网帧格式和循环冗余校验(CRC),实现了MAC数据包的封装和PHY芯片88E1111的配置,完成了千兆网络系统的设计和高速数据的传输。结果表明,该方案具有成本低,传输速率快且传输协议不受限制的优势,并最终成功应用于某水下高速图像传输系统中。     

Effect of thickness on the microstructure of GaN films on Al2O3 (0001) by laser molecular beam epitaxy

Heteroepitaxial GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.