有机无机杂化固态太阳能电池的研究进展

近年来, 由于钙钛矿材料优良的光学吸收和电荷传导特性, 有机无机杂化固态太阳能电池取得了突破性的进展. 自2009年首次报道了光电转换效率为3.8%的钙钛矿太阳能电池以来, 该类电池的效率不断突破. 基于介孔薄膜的电池已取得了超过16.7%的认证光电转换效率, 基于平板异质结结构电池光电转换效率达到19.3%, 已接近传统硅基太阳能电池的光电转换效率. 本文将介绍有机无机杂化钙钛矿作为光电材料的光学物理结构特性, 以及在固态太阳能电池中的应用. 基于固态钙钛矿太阳能电池结构上的差异, 分别介绍其在多孔结构、平板异质结结构、柔性结构以及无空穴传导材料结构电池工作特性和各自优势, 以及影响电池特性的主要影响因素, 特别是钙钛矿成膜控制等. 并阐述对钙钛矿电池的理解和进一步提高固态钙钛矿电池光电转换效率需要关注的重点以及展望.     

溶液法制备全无机钙钛矿太阳能电池的研究进展

太阳能光伏技术,能实现太阳能与电能的高效转换,是实现人类文明可持续发展的关键绿色能源技术.其中,有机无机杂化钙钛矿太阳能电池具有优异的光电特性、低廉的制备成本、高效的转换效率,已成为该领域的研究前沿.虽然有机无机杂化钙钛矿太阳能电池的光电转换效率已约高达24%,但其体系中的有机物组分易受环境中的光、热、潮等因素影响而分解,致使器件稳定性存在严重的缺陷,极大地限制了钙钛矿太阳能电池的产业化进程.因此,如何制备高效稳定的钙钛矿太阳能电池,是目前该领域的研究热点与难点,而发展具有更高环境稳定性的全无机钙钛矿太阳能电池具有重要意义.本文回顾了近年来全无机钙钛矿太阳能电池领域的研究成果,重点审视了钙钛矿薄膜的湿法制备工艺,并探讨了器件在光热稳定性方面的改善,为进一步推动钙钛矿太阳能电池的实用化进程提供可行性参考.     

二硫化钨纳米片制备及其钙钛矿太阳能电池空穴传输层应用

开发新型无机空穴传输层材料是钙钛矿电池实现商业应用的重要挑战之一。本文开展了二硫化钨纳米片制备及其钙钛矿太阳能电池空穴传输层应用研究。采用液相超声剥离法成功制备了WS 2纳米片,并将其引入钙钛矿太阳能电池中用作空穴传输层。结果表明,当WS 2纳米片溶液浓度为1 mg/mL时,制备的WS 2纳米片空穴传输层具有较合适的厚度,并且后续在其上生长的钙钛矿活性层成膜质量高、结晶性能好,电池取得6.3%的光电转换效率。结果证实WS 2纳米片可作为新型无机空穴传输层材料用于钙钛矿太阳能电池。     

钙钛矿太阳能电池的稳定性因素及封装提升性能（英文）

钙钛矿太阳能电池作为第三代新概念太阳能电池,具有光电转换效率高、成本低和加工灵活等优点,近年来发展迅速,虽然其光电转换效率逐渐可与硅电池相媲美,已接近工业应用水平,但钙钛矿太阳能电池工业应用核心问题是其稳定性。如何使钙钛矿太阳能电池长期保持高效率是研究人员需要解决的最大问题。目前,封装作为解决钙钛矿太阳能电池外部稳定性问题的手段之一已经被广泛研究,良好的封装不仅可以解决器件的稳定性问题,还可以保证器件的安全性,延长使用寿命。本文简要介绍了影响钙钛矿太阳能电池稳定性的因素及稳定性测试的条件。最后介绍了钙钛矿太阳能电池的不同封装结构、封装工艺和封装材料对封装性能的影响。随着封装研究的不断深入,研究人员将不断优化和解决存在的问题,最终实现钙钛矿太阳能电池的大规模产业化应用。     

半透明钙钛矿太阳能电池的技术关键EI北大核心CSCD

基于ABX3晶体结构材料的新型钙钛矿太阳能电池具有光电转换效率高、可溶液加工以及低温工艺兼容等优势。与此同时,利用钙钛矿材料合成方法简单、带隙可调以及膜厚和透过率可控等优点制备的半透明钙钛矿太阳能电池为薄膜光伏的发展带来了新的契机,在建筑集成光伏和叠层光伏等领域应用前景广阔。开发高效且高稳定的半透明钙钛矿太阳能电池已成为目前光伏领域的研究重点。本文系统综述了半透明钙钛矿太阳能电池的各功能层(钙钛矿光活性层、电荷传输层和电极)材料选择、光学特性调控、电学特性优化以及制备工艺调控等技术策略,同时提出了对半透明钙钛矿太阳能电池未来发展的一些展望。     

钙钛矿太阳能电池辐照实验研究

太阳能电池作为航天器的重要能源,其空间抗辐射性能具有重要的研究意义.钙钛矿太阳能电池因其较长的载流子寿命、较高的光吸收性能、高载流子迁移率以及成本低和易于制备等优势成为太阳能电池研究的前沿和热点.近年来,钙钛矿太阳能电池的光电转换效率已逐渐提升至25.5%,在各个领域逐渐走向实际应用,并将有可能应用于航天器的电源系统.目前,钙钛矿太阳能电池的空间辐照效应研究较为分散,实验样品来自不同的制备工艺,不同器件结构和组分比例会导致实验结果的差异.本文基于自主研制的钙钛矿太阳能电池样品分别开展了质子、电子以及γ辐照实验研究,通过分析辐照前后的光电特性预测其辐射效应规律,为钙钛矿太阳能电池的空间应用提供实验依据.     

减小边缘复合助力28%效率的四端钙钛矿/硅叠层太阳能电池

钙钛矿/硅叠层太阳能电池由于能突破单结太阳能电池的效率极限而吸引了广泛的研究兴趣.然而,在将商业化的大面积硅电池切割为实验室所需的平方厘米级的小面积电池时,会造成显著的效率下降,限制了叠层电池的性能.为了消除传统的激光切割法造成的热损伤和热传导,减少切割后的异质结硅电池的非辐射复合,本工作采用砂轮划片这一冷加工方法,对异质结硅电池进行切割.与采用激光切割法得到的器件相比,冷加工法得到的异质结硅电池的截面损伤小,非辐射复合得到显著抑制,器件的开路电压和填充因子均得到提高,平均光电转换效率提高了1%.将得到的硅电池与正式半透明钙钛矿太阳能电池进行机械堆叠,获得了效率超过28%的四端钙钛矿/硅叠层太阳能电池.     

钙钛矿太阳能电池近期进展

近几年来,基于有机无机金属卤化物钙钛矿(ABX_3)的太阳能电池由于其独特的物理化学性质受到了广泛的关注.这种钙钛矿材料具有很高的消光系数、较强的电荷传递能力、长的载流子寿命、长的载流子扩散距离以及特殊的双极性,同时低成本易制作.自2009年至今,钙钛矿太阳能电池的光电转换效率从最初的3.8%增长到了20.8%,使之成为最有可能在未来代替传统单晶硅太阳能电池的新型太阳能电池.同时,由于钙钛矿具有双极性,故钙钛矿太阳能电池的结构也有多种,最常见的结构有介孔结构、平面结构、介观超结构、无空穴传输层结构等.本文主要介绍钙钛矿太阳能电池的发展、电池结构及其对光电池性能的影响、钙钛矿薄膜的制备方法,同时探讨了钙钛矿在电子传输层上的吸附模型和电荷在电池界面中的传输机理以及界面工程,并介绍该类型电池在近期所获得的突破及未来可能的发展方向,以便对钙钛矿太阳能电池有进一步的了解.     

新型空穴传输材料在钙钛矿太阳能电池中的研究进展

钙钛矿太阳能电池是一种全新的全固态薄膜电池. 报道的能量转换效率已提高到19.3%, 成为可再生能源领域的热点研究方向. 空穴传输材料是构成高效钙钛矿太阳能电池的重要组分之一. 本文介绍了钙钛矿太阳能电池的基本结构, 对空穴传输材料的分子结构、能级水平和迁移率等对电池性能的影响进行了详细的总结和评述.     

甲脒碘化铅单晶基钙钛矿太阳能电池的研究

近年来,CH(NH₂)₂PbI₃(FAPbI₃)由于其带隙接近理想值而受到了广泛关注,成为钙钛矿太阳能电池中最具吸引力的光电功能材料.然而由碘甲脒(FAI)和碘化铅(PbI₂)作为前驱体制备的传统钙钛矿层化学计量比不精准,缺陷密度大,稳定性差且结晶度较低,导致钙钛矿太阳能电池性能很难进一步提高.本文采用FAPbI₃单晶制备的钙钛矿薄膜具有高结晶度,高稳定性,精确的化学计量比和低缺陷密度.单晶钙钛矿薄膜的晶粒尺寸大,晶界少,导致晶界处缺陷较少,提高了钙钛矿太阳能电池的短路电流密度(J_SC)和开路电压(V_OC),使其光电转换效率有了大幅度的提高.本文为制备高稳定性、高结晶度和低缺陷密度的钙钛矿太阳能电池提供了一种有效策略.     

First-principles investigations on the mechanical,thermal,electronic,and optical properties of the defect perovskites Cs_2SnX_6(X= Cl,Br, I)

The mechanical properties, thermal properties, electronic structures, and optical properties of the defect perovskites Cs_2SnX_6(X = Cl, Br, I) were investigated by first-principles calculation using PBE and HSE06 hybrid functional. The optic band gaps based on HSE06 are 3.83 eV for Cs_2SnCl_6, 2.36 eV for Cs_2SnBr_6, and 0.92 eV for Cs_2SnI_6, which agree with the experimental results. The Cs_2SnCl_6, Cs_2SnBr_6, and Cs_2SnI_6 are mechanically stable and they are all anisotropic and ductile in nature. Electronic structures calculations show that the conduction band consists mainly of hybridization between the halogen p orbitals and Sn 5s orbitals, whereas the valence band is composed of the halogen p orbitals. Optic properties indicate that these three compounds exhibit good optical absorption in the ultraviolet region, and the absorption spectra red shift with the increase in the number of halogen atoms. The defect perovskites are good candidates for probing the lead-free and high power conversion efficiency of solar cells.     

Novel hole transport layer of nickel oxide composite with carbon for high-performance perovskite solar cells

A depth behavioral understanding for each layer in perovskite solar cells(PSCs)and their interfacial interactions as a whole has been emerged for further enhancement in power conversion efficiency(PCE).Herein,NiO@Carbon was not only simulated as a hole transport layer but also as a counter electrode at the same time in the planar heterojunction based PSCs with the program wx AMPS(analysis of microelectronic and photonic structures)-1D.Simulation results revealed a high dependence of PCE on the effect of band offset between hole transport material(HTM)and perovskite layers.Meanwhile,the valence band offset(?E_v)of NiO-HTM was optimized to be -0.1 to -0.3 eV lower than that of the perovskite layer.Additionally,a barrier cliff was identified to significantly influence the hole extraction at the HTM/absorber interface.Conversely,the ?E_v between the active material and NiO@Carbon-HTM was derived to be -0.15 to 0.15 eV with an enhanced efficiency from 15% to 16%.     

Correlation of band electronic structure with efficiency in perovskite solar cells with vanadium (Ⅳ) oxide thin film buffers

Perovskite solar cells have been studied extensively in the area of perovskite solar cells because they have a comparatively free hysteresis. Through fabrication of a perovskite solar cell based on a vanadium oxide buffer, this study clarified the mechanism of electron and hole transport in the laminated layer upon irradiation with light. The power conversion efficiency (PCE) of the Vanadium (Ⅳ) oxide (VO₂) sputtering process device was approximately 13% and with the spin-coating process was 8.5%. To investigate the physicochemical origin of such PCE differences depending on the process type, comprehensive band alignment and band structure analyses of the actual cell stacks were performed using X-ray photoelectron spectroscopy depth measurements. Accordingly, it was found that the inconsistent valence band offset between the perovskite absorption layer and V₂O₅ layer as a function of the VO₂ process type caused a difference in the hole transport, resulting in the difference in the efficiency.     

Device simulation of quasi-two-dimensional perovskite/silicon tandem solar cells towards 30%-efficiency

Perovskite/silicon (Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional (3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional (2D) (BA)₂(MA)_n-1Pb_nI_3n+1 (n=1, 2, 3, 4, 5) (where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells (PSCs) to construct a four-terminal (4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell (n=4) obtains a power conversion efficiency (PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride (LiF) anti-reflection layer to reduce the surface reflection loss, the current density (J_sc) of the top cell is enhanced from 15.56 mA/cm² to 17.09 mA/cm², the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n=3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions.     

Efficient design of perovskite solar cell using mixed halide and copper oxide

Solar cells based on perovskites have emerged as a transpiring technology in the field of photovoltaic. These cells exhibit high power conversion efficiency. The perovskite material is observed to have good absorption in the entire visible spectrum which can be well illustrated by the quantum efficiency curve. In this paper, theoretical analysis has been done through device simulation for designing solar cell based on mixed halide perovskite. Various parameters have efficacy on the solar cell efficiency such as defect density, layer thickness, doping concentration, band offsets, etc. The use of copper oxide as the hole transport material has been analyzed. The analysis divulges that due to its mobility of charge carriers, it can be used as an alternative to spiro-OMeTAD. With the help of simulations, reasonable materials have been employed for the optimal design of solar cell based on perovskite material. With the integration of copper oxide into the solar cell structure, the results obtained are competent enough. The simulations have shown that with the use of copper oxide as hole transport material with mixed halide perovskite as absorber, the power conversion efficiency has improved by 6%.The open circuit voltage has shown an increase of 0.09 V, short circuit current density has increased by 2.32 m A/cm~2, and improvement in fill factor is 8.75%.     

Simulation design of P–I–N-type all-perovskite solar cells with high efficiency

According to the good charge transporting property of perovskite, we design and simulate a p–i–n-type all-perovskite solar cell by using one-dimensional device simulator. The perovskite charge transporting layers and the perovskite absorber constitute the all-perovskite cell. By modulating the cell parameters, such as layer thickness values, doping concentrations and energy bands of n-, i-, and p-type perovskite layers, the all-perovskite solar cell obtains a high power conversion efficiency of 25.84%. The band matched cell shows appreciably improved performance with widen absorption spectrum and lowered recombination rate, so weobtain a high J_(sc) of 32.47 m A/cm~2. The small series resistance of the all-perovskite solar cell also benefits the high J_(sc). The simulation provides a novel thought of designing perovskite solar cells with simple producing process, low production cost and high efficient structure to solve the energy problem.     

锡基钙钛矿太阳能电池载流子传输层的探讨

锡基钙钛矿太阳能电池可避免铅元素对环境带来的污染,近年来已成为光伏领域的研究热点.本文以SCAPS-1D太阳能电池数值模拟软件为平台,对不同电子传输层和不同空穴传输层的锡基钙钛矿太阳能电池器件的性能进行数值仿真对比,从理论上分析不同载流子传输层的锡基钙钛矿太阳能电池的性能差异.结果显示,载流子传输层与钙钛矿层的能带对齐对电池性能至关重要.电子传输层具有更高的导带或电子准费米能级以及空穴传输层具有更低的价带或空穴准费米能级时,对电池输出更大的开路电压有促进作用.另外,当电子传输层的导带高于钙钛矿层导带或钙钛矿层的价带高于空穴传输层的价带时,钙钛矿层与载流子传输层界面形成spike势垒,界面复合机制相对较弱,促使电池获得更佳的性能.当Cd0.5Zn0.5S和MASnBr3分别作为电子传输层和空穴传输层时,与其他材料相比,获得了更优的输出特性:开路电压Voc=0.94 V,短路电流密度Jsc=30.35 mA/cm^2,填充因子FF=76.65%,功率转换效率PCE=21.55%,可认为Cd0.5Zn0.5S和MASnBr3是设计锡基钙钛矿太阳能电池结构合适的载流子传输层材料.这些模拟结果有助于实验上设计并制备高性能的锡基钙钦矿太阳能电池.     

Characterization of CBO and defect states of CZTSe solar cells prepared by using two-step process

We fabricated kesterite Cu₂ZnSnSe₄ (CZTSe) solar cells and studied device characteristics, where CZTSe absorbers were made by using two-step process. First, we deposited precursor CZTSe films with spin-coating or sputtering, and performed sulfurization and subsequent selenization. To complete the device, we applied In₂S₃ as a buffer layer. We obtained power conversion efficiency (PCE) of 4.18% with spin-coated CZTSe absorber and 5.60% with sputtered CZTSe absorber. Both devices showed deep defects in the bulk and strong interface recombinations near the pn junction. In addition, we observed red-kinks in the current density-voltage (J-V) curves for both devices under the filtered light illumination (>660 nm), which is attributed to large conduction band offset (CBO) between the CZTSe absorber and the buffer layer and defect states in the buffer/CZTSe absorber or in the buffer. The red-kink was also observed in CZTSe (PCE of 7.76%) solar cell with CdS buffer. Hence, to enhance the PCE with CZTSe absorber, along with suppression of deep defects which act as recombination center, optimization of CBO between absorber and buffer is also required.     

Nano Ag-enhanced photoelectric conversion efficiency in all-inorganic,hole-transporting-layer-free CsPbIBr2 perovskite solar cells

All-inorganic, hole-transporting-layer-free CsPbIBr₂ perovskite solar cells have great potential for development, but their device performance needs to be further improved. Recently, metal nanostructures have been successfully applied in the field of solar cells to improve their performance. Nano Ag-enhanced power conversion efficiency (PCE) in one CsPbIBr₂ perovskite solar cell utilizing localized surface plasmons of Ag nanoparticles (NPs) on the surface has been researched experimentally and by simulation in this paper. The localized surface plasmon resonance of Ag NPs has a near-field enhancement effect, which is expected to improve the light absorption of CsPbIBr₂ perovskite photovoltaic devices. In addition, Ag NPs have a forward-scattering effect on the incident light, which can also improve the performance of CsPbIBr₂-based perovskite photovoltaic devices. By directly assembling Ag NPs (with a size of about 150 nm) on the surface of fluorine-doped tin oxide it is found when the particle surface coverage is 10%, the CsPbIBr₂ perovskite photovoltaic device achieves a best PCE of 2.7%, which is 9.76% higher than that of the control group. Without changing any existing structure in the ready-made solar cell, this facile and efficient method has huge applications. To the best of our knowledge, this paper is the first report on nano Ag-enhanced photoelectric conversion efficiency in this kind of CsPbIBr₂ perovskite solar cell.