Co/GaAs(100)界面形成以及Co超薄膜磁性质的研究

利用同步辐射光电发射和铁磁共振(FMR)研究了Co/GaAs(100)界面形成以及Co超薄膜的磁性质.结果表明,在低覆盖度(约为0.2nm)下,Co吸附原子与衬底发生强烈的界面反应,在覆盖度为0.9nm时,形成稳定的界面.从衬底扩散出的Ga原子与Co覆盖层合金化,而部分As原子与Co原子发生反应,形成稳定的键合,这些反应产物都停留在界面处很窄的区域(0.3—0.4nm)内.另一部分As原子偏析在Co覆盖层表面.结合理论模型,详细地讨论了界面结构及Ga，As原子的深度分布.FMR结果表明,生长的Co超薄膜具 关键词：     

A First-Principles Investigation of the Structural and Magnetic Stability of Fe/GaAs(001)

The electronic properties of the interface of Fe/GaAs(001) have been investigated by using first-principles and molecular-dynamics techniques. While the ground state is ferromagnetic for all structures considered, a ferrimagnetic spin structure is found to be very close in energy (<1 meV). The observed lowering of the magnetic moments when relaxing the atomic positions is believed to be connected to this close in energy lying metamagnetic state. On the other hand, the magnetic moments of the Fe atoms at the interface are large, which can be explained by the bulk-like behavior of the density ot states of interface atoms.     

CH_3CSNH_2钝化对铁磁金属与GaAs界面扩散的影响

通过实验对比 ,研究了CH3CSNH2 钝化对铁磁金属与GaAs界面处As扩散行为的影响 .发现S钝化处理改变了表面As元素的化学环境 ,减弱了As元素向铁磁金属外延层中的扩散现象 ,削弱了As与铁磁金属的反应 ,形成了较窄的反应层 ,并且改善了界面磁性 .初步探讨了S钝化影响As扩散的原因 .     

Photoemission study of Gd metal overlayers on a GaAs(110) surface

We have studied the chemical reactions of Gd metal on an in situ cleaved GaAs(110) surface by photoemission spectroscopy of Ga 3d and As 3d core-levels as well as the Gd 4f level on- and off-resonance valence band using synchrotron radiation. We find that the Fermi-level pinning is completed before 0.13 ML coverage, and the deposited Gd atoms start to react with the GaAs substrate at a very low coverage (critical coverage < 0.067 ML). As more Gd atoms are deposited, they form stable compounds with As atoms which are then trapped in the relatively narrow interfacial layer of thickness less than about 3.3 ML, while Ga atoms diffuse out towards the surface and eventually become metallic. The thickness of the GdGa intermixed layers is estimated to be about 6.7 ML, which is somewhat greater than that for a interface.     

CH3CSNH2钝化对铁磁金属与GaAs界面扩散的影响

通过实验对比,研究了CH₃CSNH₂钝化对铁磁金属与GaAs界面处As扩散行为的影响.发现S钝化处理改变了表面As元素的化学环境,减弱了As元素向铁磁金属外延层中的扩散现象,削弱了As与铁磁金属的反应,形成了较窄的反应层,并且改善了界面磁性.初步探讨了S钝化影响As扩散的原因. 关键词： S钝化 半导体界面 电子结构 磁性     

Passivation at semiconductor/electrolyte interface: Role of adsorbate solvation and reactivity in surface atomic and electronic structure modification of III-V semiconductor

These studies are focused on understanding the role played by a solvent in chemical and electronic processes occurred in the course of semiconductor surface passivation at semiconductor/electrolyte interface. It is shown that the chemical reactivity of the ionic adsorbate at a semiconductor/electrolyte interface can be changed considerably through interaction with solvent molecules. The reactivity of anions depends essentially on the solvating solvent: hydrated ions could be either slightly electrophilic or slightly nucleophilic, whereas the ions solvated by alcohol molecules are always strongly nucleophilic. Mechanism of interaction of such solvated ions with the semiconductor surface atoms depends on the solvent, as is demonstrated by the example of processes occurred at GaAs(1 0 0)/sulfide solution interfaces. It is found that on adsorption of HS⁻ ions from different solvents the AsS bonds with solvent-dependent ionic character are formed on a GaAs(1 0 0) surface. The surface obtained in such a way possesses different ionization energy and exhibit different electronic properties dependent on the solvent.     

Theoretical calculations on the adhesion, stability, electronic structure, and bonding of Fe/WC interface

The adhesion, stability, electronic structure, and bonding of Fe/WC interfaces were studied using first-principles calculations. The preferred stacking sequence is HCP structure that Fe atoms continue the natural stacking sequence of the bulk WC. For two different interfaces with HCP stacking geometry (C-HCP and W-HCP), the work of adhesion of the optimized Fe/WC interfaces are 9.7 J m⁻² for C-HCP and 5.1 J m⁻² for W-HCP, respectively. The effects of the interface on the electronic structures of both the metal Fe and ceramic WC are mainly localized within the first and second layers of the interface. C-HCP interface has strong covalency and W-HCP interface is dominated by metallic bonds. The magnetic moments of Fe atoms at interface are decreased in both interfaces. Calculations of the interfacial energies provide theoretical evidence for the excellent wear behaviors of Fe/WC composites. Besides, the chemical bonding properties for the interfacial atoms are also discussed in this paper based on Milliken population method.     

Early stages of interface formation of C60 on GaAs(1 0 0)

We present a detailed investigation of the electronic properties of C₆₀ grown on GaAs(1 0 0) substrates, as a function of the fullerene coverage, from the very early stages of interface formation up to the development of a bulk-like fullerene film. We monitor the chemical interactions and the energy levels alignment by means of X-rays, ultraviolet and inverse photoemission spectroscopies. The two latter techniques allow to investigate the electronic structure close to the Fermi level. Energy levels alignment at the interfaces of C₆₀ with p-doped and GaAs(1 0 0) are obtained and discussed.     

Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

In this paper, we report results dealing with the effects of stoichiometry on surface properties of GaAs(001) layers grown by MBE. Three aspects of surface properties were investigated: crystallography, electronic properties and chemical reactivity. Surface crystallography was studied mainly by LEED. The reconstruction of the surface was found to be drastically dependent on the composition of the uppermost atomic layer, i.e. the surface stoichiometry. According to the arsenic surface coverage, many structures from the c(8 × 2) Ga rich to the (1 × 1) arsenic saturated surface have been observed. The influence of stoichiometry on surface electronic properties has been studied by electron loss spectroscopy (ELS) and contact potential difference (CPD) measurements. In the electron loss spectra, two peaks, at about 10.3 and 20.2 eV are very sensitive to the surface composition: they gradually disappear when the arsenic coverage increases, and consequently are associated with surface states on gallium atoms. On the other hand, the CPD measurements have shown that the variation of the work function with the arsenic surface coverage is not monotonic: in particular, an abrupt change of work function of about 300 meV occurs between the (1 × 6) and c(2 × 8) structures which are very similar as far as the arsenic surface coverage (about 0,5 and 0,6 respectively) is concerned. Therefore, it seems that the work function is strongly dependent on the atomic reconstruction occurring at the surface, and not only on its stoichiometry. The connection between stoichiometry and chemical reactivity of the surface is illustrated by the study of H₂S adsorption: a large difference (factor of 10³) in sticking coefficient has been found between surfaces with different arsenic coverages.     

First-principles study of interface relaxation effect on interface and electronic structures of InAs/GaSb superlattices with different interface types

We have implemented first-principles relativistic pseudopotential calculations within general gradient approximation to investigate the structural and electronic properties of quaternary InAs/GaSb superlattices with an InSb or GaAs type of interface. Because of the complexity and low symmetry of the quaternary interfaces, the interface energy and strain in the InAs/GaSb superlattice system have been calculated to determine the equilibrium interface structural parameters. The band structures of InAs/GaSb superlattices with InSb and GaAs interfaces have been calculated with respect to the lattice constant and atomic position relaxations of the superlattice interfaces. The calculation of the relativistic Hartree–Fock pseudopotential in local density approximation has also been performed to verify the calculated band structure results that have been predicted in other empirical theories. The calculated band structures of InAs/GaSb superlattices with different types of interface (InSb or GaAs) have been systematically compared. We find that the virtual–crystal approximation fails to properly describe the quaternary InAs/GaSb superlattice system, and the chemical bonding and ionicity of anion atoms are essential in determining the interface and electronic structures of InAs/GaSb superlattice system.     

Structural,electronic,and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet

By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal(TM) atoms(from Sc to Zn) adsorbed monolayer Ga As nanosheets(Ga As NSs) are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor(Sc,V,and Fe adsorption),a half-metal(Mn adsorption),or a metal(Co and Cu adsorption).Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.     

Mössbauer studies with radioactive probes in semiconductors

The extreme sensitivity of Mössbauer spectroscopy to the local atomic and electronic configuration around Mössbauer probes is demonstrated in a number of recent defect configuration studies in semiconductors. The DX-center formation at Te and Sn donor atoms in GaAs is discussed, as well as the behavior of Co and Fe transition metal atoms in Si.     

第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响

通过广义梯度近似的第一原理全电子相对论计算, 研究了不同界面类型InAs/GaSb超晶格的界面结构、电子和光吸收特性. 由于四原子界面的复杂性和低对称性, 通过对InAs/GaSb超晶格进行电子总能量和应力最小化来确定弛豫界面的结构参数. 计算了InSb, GaAs型界面和非特殊界面(二者交替)超晶格的能带结构和光吸收谱, 考察了超晶格界面层原子发生弛豫的影响.为了证实能带结构的计算结果, 用局域密度近似和Hartree-Fock泛函的平面波方法进行了计算. 对不同界面类型InAs/GaSb超晶格的能带结构计算结果进行了比较, 发现界面Sb原子的化学键和离子性对InAs/GaSb超晶格的界面结构、 能带结构和光学特性起着至关重要的作用.     

Direct observation of a bulklike spin moment at the Fe/GaAs(100)-4x6 interface

We have used x-ray magnetic circular dichroism, which offers a unique capability to give element specific information at submonolayer sensitivity, to determine the spin and orbital magnetic moments at the Fe/GaAs(100) interface. The wedge samples, grown by molecular beam epitaxy at room temperature, consisted of 0.25-1 monolayer (ML) Fe on GaAs(100)-4x6 capped with 9 ML Co and have shown Fe spin moments of (1.84-1.96)micro(B) and a large orbital enhancement. Our results demonstrate unambiguously that the Fe/GaAs(100)-4x6 interface is ferromagnetic with a bulklike spin moment, which is highly promising for spintronics applications.     

Effect of manganese on grain boundary segregation of sulfur in iron

The ASED-MO theory was used to study the electronic effects of S and the S-Mn couple upon the chemical embrittlement of Fe grain boundaries. The results obtained for S alone in a model of grain boundary (GB) are consistent with its observed behavior as a chemical embrittling agent. It was found that the total energy of the cluster decreases when the S atom is located at the GB. When S segregate at the Fe GB containing Mn, the embrittlement process was modified. The crystal orbital overlap population (COOP) curves gives a measure of Fe-Fe bond weakening due to the segregated atoms at the GB. Our calculations show that Mn behaves as a weak embrittler on the Fe GB. The Fe-Mn bonds were strengthened, while Fe-Fe bonds of the capped trigonal prism of the GB (CTP) were weakened. On the other hand, when S segregate at the Mn/Fe cluster, some metallic bonds were resistant to chemical embrittlement.     

表面钝化效应对GaAs纳米线电子结构性质影响的第一性原理研究

纳米线表面存在大量的表面态,它们能够引起电子分布在纳米线表面,使得纳米线的电学性质对表面条件变得更加敏感,严重地制约器件的性能.表面钝化能够有效地移除纳米线的表面态,进而能够有效地优化器件的性能.采用基于密度泛函理论的第一性原理计算方法研究了表面钝化效应对GaAs纳米线电子结构性质的影响.考虑了不同的钝化材料,包括氢元素、氟元素、氯元素和溴元素.研究结果表明:具有小尺寸的GaAs裸纳米线的能带结构呈间接带隙特征,表面经过完全钝化后,转变为直接带隙特征;GaAs纳米线表面经过氢元素不同位置和不同比例钝化后,展示出不同的电学性质;表面钝化的物理机理是钝化原子与纳米线表面原子通过电荷补偿移除纳米线表面的电子态;与氢元素钝化相比,GaAs纳米线表面经过氟元素、氯元素和溴元素钝化后,带隙宽度较小,原因是氟元素、氯元素和溴元素在钝化过程中具有较小的电荷补偿能力,不能完全移除表面态.     

Buildup of the InSe/M interface (M Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy

The electronic properties of InSe/M (M  Pd, Au) interfaces have been studied by X-ray photoemission measurements. For the InSe/Pd interface, it has been found that Pd atoms diffuse into the InSe lattice at early stages of Pd coverage, acting as acceptor centers. As the Pd coverage increases, a Pd-InSe reaction determines the electronic behaviour of the interface. However, for Pd coverages higher than 1 ML, the barrier formation tends to be controlled by an emerging bulklike Pd overlayer. Despite the atomic structure of this system is far from that expected for an ideal Schottky one, the final electronic barrier value is close to that expected for an abrupt InSe/Pd Schottky interface. On the contrary, the InSe/Au system appeared to behave as a quasi-ideal abrupt Schottky interface. Annealing processes performed at temperatures higher than 600 K alter this scheme, as revealed by X-ray absorption spectroscopy measurements, enhancing diffusion of Au atoms into InSe. In any case, the electronic barrier results to be determined by the Au overlayer formed.     

Quantum chemical study of sulfur and hydrogen at the Σ=5 BCC Fe grain boundary

We investigate the effect of segregated atoms on metal-metal bonding at a grain boundary (GB). The structure and electronic properties of S and H impurities in Fe Σ=5 (013) [100] symmetrical tilt GB are studied using the atom superposition and electron delocalization molecular orbital (ASED-MO) theory. A large cluster containing 196 Fe atoms is used to simulate the local environment of the boundary. The results show that impurities induce large relaxation in the GB and that the GB gives rise to an energetically favorable zone for the H and S accumulation. No S-H association is found and the deleterious effect of H is of much less important as compared with S.     

First-principles calculations of adhesion,bonding and magnetism of the Fe/HfC interface

First-principles plane-wave pseudopotential calculations of the adhesion, bonding and magnetism of the interface between the ferromagnetic bcc Fe and non-magnetic HfC are performed. The work of adhesion for C- and Hf-site Fe/HfC interfaces is calculated. High adhesion at C-site interface is found and Fe–C polar covalent bonds are formed across the interface. The magnetic moments of Fe atoms at interface are increased in both interfaces. The effect of the magnetism on the electronic structure of Fe/HfC interface is also investigated. It is shown that the change in band of majority-spin leads to enhance the magnetic moment of Fe.     

微合金化元素对Fe-Al界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe/Al界面的能量学和电子结构,讨论了替位型掺杂的元素Zn、Mn、Ni在Fe/Al界面处的作用.结果表明:元素Zn、Mn、Ni都会优先替换界面处的Fe原子,使得界面结合能增加,体系更稳定,有利于界面的结合;跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明:掺杂后有利于跨界面的Fe-Al间成键,从而加强了Al层与Fe基体的结合,且结合强度由强到弱依次为:掺Zn>掺Mn>掺Ni;与实验比较吻合.最后对掺杂Zn的增韧机理加以解释.