局域功函数图像及其在Cu(111)-Au/Pd表面的应用

用扫描隧道显微镜（STM）对Cu(111)-Au和Cu(111)-Pd表面的局域功函数进行了研究.通过 测量隧道电流对针尖样品间距的响应，得到了与STM形貌图一一对应的表面局域功函数图像. 实验发现，Au/Pd覆盖层和Cu衬底间的功函数有明显的不同.Pd薄膜的功函数甚至超过了其体 本征值，且功函数在台阶处变小.用偶极子的形成解释了台阶处功函数的降低.这一工作表明 ，用测量局域功函数的方法容易区分表面上不同的元素，并具有纳米尺度的空间分辨率. 关键词： 扫描隧道显微镜 局域功函数 台阶     

NO在Pt（111）表面的振动和离解

基于密度泛函理论和周期平板模型研究了NO在Pt（111）表面的吸附,通过扫描隧道显微镜（STM）的理论计算分析了吸附的结构特征．计算得到的Pt-NO伸缩振动（圪）频率基本保持不变,受阻平动（v3,v4）和受阻转动（us,v6）完全是简并的．采用CI-NEB方法讨论了NO在Pt（111）表面的离解过程,研究结果表明NO在Pt（111）表面的离解比较困难,必须克服2．29eV的能垒．     

利用扫描隧道谱(STS)对石墨单晶表面局域电子态的研究

利用ＳＴＳ测量并结合扫描隧道显微镜（ＳＴＭ）扫描图象，给出一组沿石墨单晶表面原子分辨的ＳＴＭ图象上某一线段各点处的扫描隧道谱．ｄ（lｎI）／ｄ（lｎＶ）～ｅＶ由测量谱给出的样品表面Ｅ_Ｆ附近局域态密度分布与由体能带结构计算得到的结果在一定程度上相符合，将各条曲线中Ｅ_Ｆ附近的态密度峰能量对相应的空间位置作图，给出石墨表面E_F附近能态密度在测量区域内实空间的变化。通过对表面不等价Ａ，Ｂ类原子处局域电子结构的分析并利用简单模型进行计算，给出了与实验 关键词：     

扫描隧道显微镜观察石墨被Au离子轰击后的表面损伤(Ⅱ)

用扫描隧道显微镜研究了530keV—4.5MeV Au离子轰击高定向石墨所产生的表面孤立损伤，并对表面小丘状损伤的线度进行了测量和统计．利用非线性损伤的热峰模型对重离子轰击石墨表面损伤的线度进行了计算，得到了与实验数据较为符合的理论结果．并对重离子轰击石墨表面损伤的产生机理作了探讨． 关键词：     

O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

用中能电子向前散射图像研究表面原子结构

从中能电子向前散射产生的实空间图像研究了Cu（111）1×1，Si（111）（3^1/2×3^1/2）R30°-In及Ge（111）（3^1/2×3^1/2）R30°-Ag的表面结构．Cu（111）1×1的图像不仅说明表面有三重旋转轴对称性，而且还表明fcc结构一直保持到最表面一层原子．Si（111）（3^1/2×3^1/2）R30°-In表面的图像说明In原子占据T4位，而不是H3位．Ge（111）（3^1/2×3^1/2）R30°-Ag的图像说明HCT模型是正确的．这些成功的应用说明从中能电子向前散射图像可以直观而且快捷地获得表面结构类型的可靠信息，而无需类似于低能电子衍射（LEED）表面结构分析那样的复杂计算 关键词：     

Au表面等离子体激元激发的扫描探针电子能谱

结合扫描隧道显微镜（STM）与电子能谱仪是实现表面微区元素分析的途径之一．我们将环形电子能量分析器和三维扫描探针系统相结合,建立了一台扫描探针电子能谱仪(SPEES)．通过测量针尖近场发射束流激发的Au表面能量损失谱,我们用研究了Au原子的等离子体激元激发现象．进一步通过改变针尖－样品距离,我们研究了Au等离子体激元峰与弹性散射峰的强度比随针尖－样品距离变化的关系．研究结果发现该强度比与针尖－样品距离的关系并不是单调变化,而是在一个特定位置存在极大．     

c(2×2)O吸附Cu(001)表面结构、电子态与STM图像的研究

用投影子缀加波和CP分子动力学方法研究了贵金属Cu(001)面的表面结构、弛豫以及O原子的c(2×2)吸附状态. 研究结果得出在这种吸附结构中，O原子与衬底Cu原子之间的垂 直距离约为0069nm，Cu—O键长为0.194nm，功函数约为5.29 eV；吸附O原子形成金属性能带结构，由于Cu—O的杂化作用,在费米能以下约6.7 eV处出现了局域的表面态.用Tersoff-Hamann途径计算了该表面的扫描隧道显微镜图像，并讨论了与实验结果之 间的关系. 关键词： Cu(001)-c(2×2)/O 电子态 STM图像     

K/Cu(111)表面功函数的变化

本工作用俄歇电子能谱(AES)测定K在Cu(111)表面上的覆盖度,用Kelvin探头测量表面功函数的变化,得出功函数依赖于K覆盖度的关系曲线,功函数最大变化值△φ_max=3.14eV,功函数最小时的覆盖度θ_min=0.18,初始偶极矩p(0)=7.0Debye,实验结果与武汝前等人的理论模型相一致。 关键词：     

超高真空原子尺度Aux/Si(111)-(7×7)表面吸附的电荷分布测量

原子尺度表面吸附Au原子的物理化学性质对研究纳米器件的制备以及表面催化等起着非常重要的作用.利用调频开尔文探针力显微镜研究了室温下Au在Si(111)-(7×7)表面吸附的电荷分布的特性.首先,利用自制超高真空开尔文探针力显微镜成功得到了原子尺度Au在Si(111)-(7×7)不同吸附位的表面形貌与局域接触电势差(LCPD);其次,通过原子间力谱与电势差分析了Au/Si(111)-(7×7)特定原子位置的原子特性,实现了原子识别;并通过结合差分电荷密度计算解释了Au/Si(111)-(7×7)表面间电荷转移与Au的吸附特性.结果显示,Au原子吸附有单原子和团簇形式.其中,Au团簇以6个原子为一组呈六边形结构吸附于Si(111)-(7×7)的层错半单胞内的3个中心原子位;单个Au原子吸附于非层错半单胞的中心顶戴原子位;同时通过电势差测量得知单个Au原子和Au团簇失去电子呈正电特性.表面差分电荷密度结果显示金在吸附过程中发生电荷转移,失去部分电荷,使得吸附原子位置上的功函数局部减少.在短程力、局域接触势能差和差分电荷密度发生变化的距离范围内,获得了理论和实验之间的合理一致性.     

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms

Using scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES) and first-principles density functional theory (DFT), we study the structural and the electronic properties of the Si(111)5 × 2-Au surface decorated with Pb adatoms. The STM topography data reveal that Pb adatoms form a similar superstructure to that observed in the case of Si adatoms on a bare Si(111)5 × 2-Au surface. The DFT calculations show that preferential adsorption sites of Pb atoms are located near the double Au chain. Bias dependent STM topography and spectroscopy together with the DFT calculations allow us to distinguish Pb from Si adatoms. Both the Si and Pb adatoms modify the electronic properties in the same way, which confirms the electronic origin of the stabilization of the surface.     

Triphenylene adsorption on Cu(111) and relevant graphene self-assembly

Investigations on adsorption behavior of triphenylene(TP) and subsequent graphene self-assembly on Cu(111) were carried out mainly by using scanning tunneling microscopy(STM).At monolayer coverage,TP molecules formed a longrange ordered adsorption structure on Cu(111) with an uniform orientation.Graphene self-assembly on the Cu(111) substrate with TP molecules as precursor was achieved by annealing the sample,and a large-scale graphene overlayer was successfully captured after the sample annealing up to 1000 K.Three different Moire patterns generated from relative rotational disorders between the graphene overlayer and the Cu(111) substrate were observed,one with 40 rotation between the graphene overlayer and the Cu(111) substrate with a periodicity of 2.93 nm,another with 70 rotation and 2.15 nm of the size of the Moire supercell,and the third with 100 rotation with a periodicity of 1.35 nm.     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

Understanding formation of molecular rotor array on Au(111) surface

The motion of single molecules on surfaces plays an important role in nanoscale engineering and bottom-up construction of complex devices at single molecular scale. In this article, we review the recent progress on single molecular rotors self-assembled on Au(111) surfaces. We focus on the motion of single phthalocyanine molecules on the reconstructed Au(111) surface based on the most recent results obtained by scanning tunneling microscopy (STM). An ordered array of single molecular rotors with large scale is self-assembled on Au(111) surface. Combined with first principle calculations, the mechanism of the surface-supported molecular rotor is investigated. Based on these results, phthalocyanine molecules on Au (111) are a promising candidate system for the development of adaptive molecular device structures.     

Formation of a monolayer h-BN nanomesh on Rh(111) studied using in-situ STM

As a member of the 2 D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh(111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy(STM), we directly observed the formation of h-BN in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.     

Manifestation of work function difference in high order Gundlach oscillation

Gundlach oscillation (or the standing-wave state) is a general phenomenon manifesting in the tunneling spectrum acquired from a metal surface using scanning tunneling spectroscopy. Previous studies relate the energy shift between peaks of the lowest-order Gundlach oscillation observed on the thin film and the metal substrate to the difference in their work functions. By observing Gundlach oscillations on Ag/Au(111), Ag/Cu(111), and Co/Cu(111) systems, we demonstrate that the work function difference is not the energy shift of the lowest order but the ones of higher order where a constant energy shift exhibits. Higher order Gundlach oscillations can thus be applied to determine the work function of thin metal films precisely.     

STM simulation of molecules on ultrathin insulating overlayers using tight-binding: Au-pentacene on NaCl bilayer on Cu

We present fast and efficient tight-binding (TB) methods for simulating scanning tunneling microscopy (STM) imaging of adsorbate molecules on ultrathin insulating films. Due to the electronic decoupling of the molecule from the metal surface caused by the presence of the insulating overlayer, STM can be used to image the frontier molecular orbitals of the adsorbate. These images can be simulated with a very efficient scheme based on hopping integrals which also enables the analysis of phase shifts in the STM current. Au-pentacene complex adsorbed on a NaCl bilayer on Cu substrate provides an intricate model system which has been previously studied both experimentally and theoretically. Our calculations indicate that the complicated shape of the molecular orbitals may cause multivalued constant current surfaces - leading to ambiguity of the STM image. The results obtained using the TB methods are found to be consistent with both DFT calculations and experimental data.     

Observation of sputtering damage on Au(111)

The morphology of a Au(111) surface has been observed with the STM (scanning tunneling microscope) after ion bombardment with 2.5 keV Ne⁺ ions at about 400 K. Mostly triangular and hexagonal shaped vacancy islands are seen in the STM topographs. They are bounded by monatomic steps, oriented along the closed packed 110 directions. The general morphology confirms the conclusions inferred from TEAS (thermal energy atom scattering) measurements on ion bombarded Pt(111) surfaces. The observation of a propensity for the formation of {100} microfacetted 110 ledges is discussed.     

Barrier height imaging of Si(1 1 1)3 × 1-Ag reconstructed surfaces

We investigated the bias voltage polarity dependence of atomically resolved barrier height (BH) images on Si(1 1 1)3 × 1-Ag surfaces. The BH images were very similar to scanning tunneling microscopy (STM) images in both the empty and filled states. This similarity strongly supports the interpretation that the BH image reflects the vertical decay rate of the surface local density of states (LDOS). Differences in contrast and protrusion shapes between BH and STM images were observed. We attributed these differences to the geometric contribution to the STM image and to the improved spatial resolution of the BH image due to the lock-in technique.