含特异材料光子晶体隧穿模的偏振特性

构造了由普通材料A(SiO₂)和电单负材料B组成的(AB)^N(BA)^N型一维光子晶体.数值计算表明原禁带的1907.3 nm处出现了一个十分尖锐的隧穿模. 入射角增加,该隧穿模的透射率和半峰全宽度均保持不变,但位置发生蓝移, 入射角在15°-65°的区间内,移动率的绝对值 |dλ/dθ| 较大.当B介质的磁导率μ_B 从5增加到10时,只是隧穿模的位置发生了红移. 介质的几何厚度增加时,隧穿模的透射率不变,但其位置红移明显,半峰全宽略有增加.     

光子晶体缺陷模的带宽与品质因子研究

利用光学传输矩阵法研究了结构参量对缺陷态光子晶体的缺陷模带宽和品质因子的影响.研究发现,当缺陷介质层厚度h₀的值较小时,缺陷模的带宽很小且基本保持不变;当h₀较大时,缺陷模的带宽随h₀的增加而快速增加.另外发现,缺陷模的品质因子在某个h₀处取最大值.但是总体上看,h₀较小时的品质因子要远大于h₀较大时的品质因子.此外,缺陷模的品质因子随光子晶体的周期数增加而急剧增加约4.788倍,而带宽则随周期数的增加而急剧减少约4.788倍.当周期数为13时就可以获得10⁹以上的品质因子值和小于10^-9的相对带宽值.     

磁性隧道结中的量子相干输运研究

采用散射矩阵的方法研究了铁磁/绝缘层/半导体/绝缘层/铁磁(FM/I/SM/I/FM)磁性双隧道结的量子相干输运特性.研究发现当隧穿电子平均自由程(l_p)和中间层半导体厚度(L)可比拟时双结隧道磁阻(TMR)将随L的变化产生量子振荡，当l_p远大于L时振荡拐点处出现cut-off波矢，分析表明cut-off波矢主要是来自于隧道结两边的铁磁和半导体层隧穿电子动量波矢的高度不匹配性，随着L相似文献   

基于二维光子晶体耦合腔波导的新型慢光结构研究

对二维介质柱光子晶体耦合腔波导慢光结构进行了研究,发现随着缺陷腔之间晶格个数增多,群速度减小很快,选用7×7超胞单元时耦合腔波导结构的导模最大群速度ν_g-max只有光子晶体线缺陷波导的1/251.然后对7×7超胞单元的缺陷腔周围四个介质柱半径进行调整,发现新型结构导模的ν_g-max进一步减小,最小可达到589×10^-4c,约为未调整之前的1/5.最后通过比较发现,当改变缺陷腔上下相邻两个介质柱半径时得到的结构具有更好的慢光特性.     

非对称方势阱中的激子及其与声子的相互作用

采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga_1－xAl_xAs/ GaAs/Ga_0.7Al_0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增     

氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

由单负材料组成的对称型一维光子晶体的偏振特性

利用传输矩阵法,讨论了由单负材料组成的对称型一维光子晶体的偏振特性。结果表明:入射角较小时,TE、TM两波隧穿模的中心位置基本相同。入射角θ增加,两隧穿模均向短波方向移动,且其半峰全宽变窄。入射角θ>20°时,两隧穿模的蓝移量增加,且TM波的移动量大于TE的,入射角越大,这一变化越明显。周期数N增加时,两隧穿模的位置保持不变,半峰全宽变窄;TM波隧穿模的透射率保持为1,而TE波的有所下降。介质的几何厚度增加时,两隧穿模均向长波方向移动,隧穿模的透射率保持不变。两介质几何厚度的变化量相同,两隧穿模的移动量也分别相同。     

混合应变多量子阱有源材料及其增益偏振特性

采用MOCVD外延交替生长了压应变、张应变In_xGa1-xAs_yP1-y多量子阱材料,对应1.3 μm波段.平均应变量-0.16%,周期11 nm.采用三个周期外延材料的芯片制作的LD,实现了TE和TM双偏振模激射.     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数，能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料，其间接禁带宽度(Γ→X)E_g为2.07eV，比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质，利用Kramers-Kronig色散关系，分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算，并将二者结果做了     

第Ⅴ类两态叠加多模叠加态光场的等阶N次方H压缩特性研究

本文构造了由多模真空态|{O_j}〉q和多模虚相干态的相反态|{-iZ_j}〉q这两者的线性叠加所组成的第Ⅴ类两态叠加多模叠加态光场ψ₅⁽²⁾〉q,利用多模压缩态理论详细研究了态 ψ₅⁽²⁾〉q的广义非线性等阶N次方H压缩特性.结果发现:1)态ψ₅⁽²⁾〉q是一种典型的多模非经典光场;无论腔模总数q与压缩阶数N这两者之积q·N取奇还是取偶,只要各模的初始相位之和 、态间的初始相位之差(θ_nq^(I)－θ_oq^(o))等满足一定的量子化条件,态ψ₅⁽²⁾〉q总可分别呈现出周期性变化的、任意的奇数模-奇数阶、奇数模-偶数阶、偶数模-偶数阶和偶数模-奇数阶这四种不同形式的等阶N次方H压缩效应.2)上述四种不同形式的等阶N次方H压缩效应,其态间压缩条件完全相同,但模间压缩条件完全不同,结果使其压缩幅度、压缩结果和压缩特性等各不相同.3)无论q·N取奇还是取偶,态ψ₅⁽²⁾〉q的第一和第二这两个正交分量的等阶N次方H压缩效应总是呈现周期性的互补关系.     

Spectroscopic study ofβ-Ni(OH)2 under pressure

Infrared absorption and Raman study ofβ-Ni(OH)₂ has been carried out up to 25 GPa and 33 GPa, respectively. The frequency ofA _2u internal antisymmetric stretching O-H mode decreases linearly with pressure at a rate of −0.7 cm⁻1/GPa. The FWHM of this mode increases continuously with pressure and reaches a value of ∼ 120 cm⁻¹ around 25 GPa. There was no discernible change observed in the frequency and width of the symmetric stretchingA _1g O-H Raman mode up to 33 GPa. The constancy of the Raman mode is taken as a signature of the repulsion produced by H-H contacts in this material under pressure. Lack of any discontinuity in these modes suggests that there is no phase transition in this material in the measured pressure range.     

由单负材料组成的含有缺陷层的一维光子晶体结构中的缺陷模

用转移矩阵方法研究了由单负材料组成的含有缺陷层的一维光子晶体的透射特性.研究结果表明:当缺陷层存在时,会在原有光子晶体的禁带中出现缺陷模.缺陷模的位置随杂质层磁导率μ的增加从禁带的高频端向低频端移动;但随杂质层介电常数ε的增加却从禁带的低频端向高频端移动.利用该特性可以实现对光传播的动态调控. 关键词： 单负材料 光子晶体 缺陷模     

Effects of tunneling coupling on plasmon modes in asymmetric double-quantum-well structures

The collective charge density excitations in asymmetric double-quantum-well (DQW) structures with different tunneling strengths are systematically studied. In particular, the damping properties of the plasmon modes in various tunneling strengths are investigated in detail. It is shown that plasmon modes in asymmetric DQW structures are quite different from those in symmetric DQW systems. In weak tunneling regime, an intra-subband mode ω _- with an acoustic-like dispersion relation which is damped in symmetric DQW structures arises and coexists with the optical-like mode ω ₊ while the inter-subband mode ω ₁₀ is highly damped. With the tunneling strength being increased, the ω ₁₀ branch gradually becomes undamped and emerges out of the (1-0) single-particle continuum, whereas the ω _- branch gradually approaches the (0-0) single-particle continuum. In intermediate coupling regime, these three branches of modes coexist undamped. In strong tunneling regime, ω _- enters the (0-0) single-particle continuum and becomes damped. Consequently, only the ω ₊ and ω ₁₀ modes exist in this regime. Received 10 July 2001 and Received in final form 17 September 2001     

Focal switch of cosine-Gaussian beams

The focal switch of cosine-Gaussian (CsG) beams passing through a system with the aperture and lens separated is studied analytically and numerically. It is shown that the focal switch of CsG beams can appear not only for the apertured case, but also for the unapertured case. The necessary condition for the focal switch is that truncation parameter α > α_c and the beam parameter β > β_c, α_c, β_c being the corresponding critical values. There exists a maximum of the relative transition height Δz _sw as α varies, and Δz _sw increases with increasing β and decreasing N _w. The normalized axial intensity minimum I _min / I _max decreases with an increase of α and β, and I _min / I _max remains unchanged as N _w varies.     

Electron tunneling spectroscopy of the phonon spectrum of MgB<Subscript>2</Subscript>

The specific features of the phonon spectrum of the MgB₂ compound (T _c = 38 K) are investigated by tunneling spectroscopy. It is demonstrated that both the position and the energy width of the fundamental optical mode E _2g in the phonon spectrum are in good agreement with inelastic X-ray spectroscopy data but differ substantially from Raman spectroscopy results. Among possible factors responsible for this discrepancy, the anharmonic and nonadiabatic effects that are characteristic of the MgB₂ system are discussed.     

Recombination zone and efficiency in bipolar single layer light-emitting devices: a numerical study

The efficiency of organic light-emitting devices (OLEDs) is closely related to the position and width of recombination zone (RCZ) in the emission layer. Based on the drift–diffusion theory of carrier motion in semiconductors, we developed a numerical model for the position and width of the RCZ in bipolar single layer OLEDs. The calculation results show that for a given operation voltage, the position and width of the RCZ are determined by the mobility difference of electrons and holes, and the energy barrier at the two contacts. When the anode and cathode contact are both ohmic, then RCZ will be near the electrode, from which the low-mobility carriers are injected, and the smaller the mobility difference, the wider the RCZ, and the width of RCZ will be maximal when the mobility of holes and electrons are equal. When the anode contact is Schottky, while the cathode contact is ohmic, then the position and width of RCZ will be determined by both the mobility difference and hole–injection energy barrier. When μ _p<μ _n, the RCZ will be at the anode side. When μ _p>μ _n, then RCZ will move away from the anode and become wider, with the increase of the hole injection barrier. For a given hole–injection barrier and mobility of holes and electrons, the position and width of RCZ change with the applied voltage.     

Tunable near-infrared optical properties of three-layered gold–silica–gold nanoparticles

The absorption spectra of gold–silica–gold nanoshells have been investigated by using Mie theory with variation of the geometry. With an increase in core radius the plasmon resonance for the lower energy mode ω ₋⁻ shows a distinct redshift while for the high-energy mode ω ₋⁺ shows a blueshift. It is surprising that with increasing middle layer thickness the resonance of ω ₋⁻ mode blueshifts first and then redshifts. In addition, an increase of the dielectric constant of the middle layer is found to reduce the resonance energies of the particle. The tunable near-infrared optical properties are discussed in terms of plasmon hybridization theory.     

Raman study of temperature dependence of lattice modes in calcite

The temperature dependence of the line width and the peak position of theE _g librational mode (of nominal frequency 285 cm⁻¹) and theE _g translational mode (of nominal frequency 155 cm⁻¹) in calcite (CaCO₃) have been studied by laser-Raman spectrometry. The role of orientational relaxation as a possible process contributing to the line width has been evaluated. It is concluded that reorientations do not play a major part in relation to the present observations. It is further shown that the latter can be understood on the basis of cubic and quartic anharmonic processes. The data also suggest that certain phonon interactions earlier considered insignificant for peak shift in calcite, do contribute significantly.     

Tunneling conductance of the graphene SNS junction with a single localized defect

Using the Dirac-Bogoliubov-de Gennes equation, we study the electron transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit l _def ≪ L ≪ ξ. We find that the spectrum of Andreev bound states is modified in the presence of a single localized defect in the bulk. The minimum tunneling conductance remains the same, and this result is independent of the actual location of the imperfection.