Ar adsorptions on Al (111) and Ir (111) surfaces: a first-principles study

We investigate the adsorptions of Ar on Al (111) and Ir (111) surfaces at the four high symmetry sites, i.e., top, bridge, fcc- and hcp-hollow sites at the coverage of 0.25 monolayer (ML) using the density functional theory within the generalized gradient approximation of Perdew, Burke and Ernzerhof functions. The geometric structures, the binding energies, the electronic properties of argon atoms adsorbed on Al (111) and Ir (111) surfaces, the difference in electron density between on the Al (111) surface and on the Ir (111) surface and the total density of states are calculated. Our studies indicate that the most stable adsorption site of Ar on the Al (111) surface is found to be the fcc-hollow site for the (2 × 2) structure. The corresponding binding energy of an argon atom at this site is 0.538 eV/Ar atom at a coverage of 0.25 ML. For the Ar adsorption on Ir (111) surface at the same coverage, the most favourable site is the hcp-hollow site, with a corresponding binding energy of 0.493 eV. The total density of states (TDOS) is analysed for Ar adsorption on Al (111) surface and it is concluded that the adsorption behaviour is dominated by the interaction between 3s, 3p orbits of Ar atom and the 3p orbit of the base Al metal and the formation of sp hybrid orbital. For Ar adsorption on Ir (111) surface, the conclusion is that the main interaction in the process of Ar adsorption on Ir (111) surface comes from the 3s and 3p orbits of argon atom and 5d orbit of Ir atom.     

Ar+ excited aluminium Auger electron emission from Cu-Al alloys

The aluminium Auger electron emission from Cu-Al alloys in solid solution bombarded with 2–16 keV Ar⁺ ions is studied as a function of the Al concentration. A linear law is observed for the intensity of the high energy Auger peak at 76 eV which originates only from the primary asymmetric collisions Ar → Al where two vacancies are created in the 2p level of the Al atom. On the contrary, a parabolic law is found for the intensity of the principal Auger peak at 63.5 eV (one Al 2p vacancy) which originates from the asymmetric collisions Ar → Al and from the symmetric collisions Al → Al together. The proportion of asymmetric collisions among collisions effective for the principal Auger emission from pure aluminium can be deduced from these results. It appears as an increasing function of the bombardment energy: its value is nearly equal to 6% at 10 keV and 18% at 15 keV.     

Spatial variation of the electron energy in a H. F. ring discharge

The electron temperature has been measured in inductively coupled high frequency gas discharges in Ar, Kr and Xe with the aid of Langmuir probes. The measured temperature shows a rather low radial space dependence up to values ofpR ≈ 30 Torr cm (p=gas pressure,R=radius of the discharge vessel). This behaviour is explained on the basis of the local energy balance of the electrons as a consequence of the energy transport by thermal conduction in the electron gas.     

Angular studies of potential electron emission in the interaction of slow ions with Al surfaces

We report energy distributions of electrons emitted from Al surfaces under impact by 1 keV Ar+ and 1-5 keV Ne+ ions. The variation of the energy distributions with the angle of incidence is different for both ions and provides information on the mechanism responsible for electron emission. For Ar+ electron emission results mainly from Auger neutralization, while for Ne+ an important emission mechanism is the decay of plasmon excitations. We find a transition between surface and bulk plasmon excitations as the energy of the ion is increased.     

Plasmon tsunamis on metallic nanoclusters

A model is constructed to describe inelastic scattering events accompanying electron capture by a highly charged ion flying by a metallic nanosphere. The electronic energy liberated by an electron leaving the Fermi level of the metal and dropping into a deep Rydberg state of the ion is used to increase the ion kinetic energy and, simultaneously, to excite multiple surface plasmons around the positively charged hole left behind on the metal sphere. This tsunami-like phenomenon manifests itself as periodic oscillations in the kinetic energy gain spectrum of the ion. The theory developed here extends our previous treatment (Lucas et al 2011 New J. Phys. 13 013034) of the Ar(q+)/C(60) charge exchange system. We provide an analysis of how the individual multipolar surface plasmons of the metallic sphere contribute to the formation of the oscillatory gain spectrum. Gain spectra showing characteristic, tsunami-like oscillations are simulated for Ar(15+) ions capturing one electron in distant collisions with Al and Na nanoclusters.     

Electronic structure of Al2O3 from electron energy loss spectroscopy

The electronic structure of Al₂O₃ has been studied by electron energy loss spectroscopy (ELS), and an energy level model of both filled and empty states has been constructed from the ELS and available optical data. For the high temperature pyrolytic α-polycrystalline Al₂O₃ films, the transitions are assumed to originate at the two principal peaks in the valence band density of states and the O(2s) core state, and to terminate on two peaks within the conduction band density of states. We also report energy loss spectra due to excitations out of the deeper Al(2p), Al(2s), Al(1s), and O(1s) core levels. The excitations originating at the Al(2p), Al(2s), and Al(1s) core levels terminate on levels in the conduction band and on an exciton lying about 1 eV below the conduction-band edge.     

Decay of cystalline order and equilibration during the solid-to-plasma transition induced by 20-fs microfocused 92-eV free-electron-laser pulses

We have studied a solid-to-plasma transition by irradiating Al foils with the FLASH free electron laser at intensities up to 10(16) W/cm(2). Intense XUV self-emission shows spectral features that are consistent with emission from regions of high density, which go beyond single inner-shell photoionization of solids. Characteristic features of intrashell transitions allowed us to identify Auger heating of the electrons in the conduction band occurring immediately after the absorption of the XUV laser energy as the dominant mechanism. A simple model of a multicharge state inverse Auger effect is proposed to explain the target emission when the conduction band at solid density becomes more atomiclike as energy is transferred from the electrons to the ions. This allows one to determine, independent of plasma simulations, the electron temperature and density just after the decay of crystalline order and to characterize the early time evolution.     

矩形均匀电子束在激光介质中的能量沉积的模拟计算

本文主要论述了0.5MeV,单能垂直入射的电子束在三种不同密度的氟化氪准分子激光介质中的能量沉积。计算是采用Monte Carlo方法的MCSED程序,光轴方向采用周期性边界条件,因此能够给出平行于和垂直于电子束入射方向的沉积能量的空间分布。本文给出了在三种不同密度下的出射电子的角分布。用该程序对垂直入射的,初始能量为1MeV的电子在半无限大Al靶中的沉积能量的计算结果与ONETRAN程序的结果及实验结果的比较表明MCSED程序的计算结果是可靠的。     

Interaction of short laser pulses with metals at moderate intensities

The developed model including hydrodynamics with electron heat conduction and electron–ion energy exchange, and cavitation breakup of stretched metastable liquid aluminum (Al) is compared with our laser experiments. For the first time the measured and calculated ablation thresholds agree well in both crater depth and fluence.     

分子束外延生长的n型Al掺杂ZnS1-xTex深中心研究

应用电容-电压、光致荧光和深能级瞬态谱技术研究了分子束外延生长的n型Al掺杂ZnS_1-xTe_x外延层深中心.Al掺杂ZnS_0.977Te_0.023的光致荧光强度明显低于不掺杂的ZnS_0.977Te_0.023，这表明一部分Al原子形成非辐射深中心.Al掺杂ZnS_1-xTe_x(x=0，0.017，0.04和0.046)的深能级瞬态傅里叶 关键词：     

Photoelectron spectroscopy of Ar/Cu(100) interface states

Buried interface states in Ar/Cu(100) were studied by means of one- and two-photon photoemission experiments. With increasing Ar overlayer thickness, a transition from broad electron scattering resonances in the Ar conduction band into a hydrogen-like series of quasi-bound states at the Ar/Cu interface was observed. The thickness dependence of energies and lifetimes is compared to theoretical resonance positions and linewidths derived from a parameterized one-dimensional potential. PACS 73.20.-r; 73.40.Ns; 79.60.-i; 78.47.+p     

衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

Gasaufheizung und Energiebilanz einer stationären hochfrequenten Ringentladung in Edelgasen

Gasheating and Energy Balance of a Stationary High Frequency Ring Discharge in Rare Gases The energy balance of an inductively coupled high frequency (28,5 Mhz) discharge in a cylindrical vessel (11,2 cm diam.) in Ne, Ar, Kr, Xe at pressures between 0,1 and 10 Torr and at power inputs between 10 and 1000 W is investigated. The heat power transferred to the neutral gas in the stationary discharge is determined from the time behaviour of the neutral gas pressure in the afterglow period. The power measurements are completed by probe measurements of the electron density and energy distribution function. The measured electron energy distribution functions are maxwellian with a slight deficit electrons in the energy range of inelastic collisions. The electron temperatures show a rather low radial space dependence which can be explained on the basis of the local energy, balance by thermal conduction in the electron gas. The measured gas heating power is within the experimental error (factor 2) in agreement with calculations from the measured electron temperature and density under the assumption that the gas is heated by elastic electron-atom-collision only. A discussion of the energy balance for the total discharge indicates volume recombination losses of the ions which increase the density of the excited atoms and hence the energy losses by stepwise exitations.     

Interaction of argon with the Al(100) surface

We present a new method for calculating the interaction energy of a noble gas atom with a metallic surface. This method combines atomic structure and solid state theory techniques and is thus applicable to ground state as well as to excited states of a chemisorbed (physisorbed) atom. We present results for the dipole moment and the interaction energy of Ar onto Al(100).     

Improvement of ZnO nanorod based quantum Dot (cadmium sulfide) sensitized solar cell efficiency by aluminum doping

This study investigates the performance of quantum dot sensitized solar cells (QDSSCs) based on aluminum (Al)-doped and undoped ZnO nanorods. Current density–voltage (J–V) characterization shows that Al doping into ZnO nanorods (AZO NRs) can improve short circuit current density (J_sc) and the energy conversion efficiency (η) of QDSSCs. The maximum η=1.15% is achieved in QDSSCs when Al concentration is 0.5 wt%, as compared to undoped state where η=0.57%. These current densities and the energy conversion efficiency improvement are studied using the electrochemical impedance spectroscopy (EIS). EIS results indicate that the electron transport resistance in the photoanode of QDSCs is reduced with introduction of Al into ZnO structure, which leads to increasing J_sc. It is also found that recombination resistance reduces with introduction of Al into ZnO because of the upward displacement of Fermi level with respect to AZO conduction band (CB) and increasing electron density in the ZnO CB. This reduction of recombination resistance causes higher recombination rate in QDSCs based AZO NRs.     

Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films

Nanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (σ_ac) is found to be proportional to angular frequency (ω^s). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed.     

Energieverteilung und Ausbeute der Photo-α-Teilchen aus Al,Ar, Se und Ag

The energy spectra of photoalpha particles from irradiations of natural Al, Ar, Se and Ag with 32.5 MeV bremsstrahlung were measured between 4 and 16 MeV using solid state detectors. Yield values in μb/MeV · ster were found to be 1.3; 3.0; 0.28; and 0.12 for Al, Ar, Se, and Ag, respectively. Simple compound nucleus calculations show qualitative agreement with the measurements.     

Al3O3N纳米线的制备与表征

在H2+Ar混合气氛中加入少许N2+O2气氛，采用直流电弧等离子体法制备了Al3O3N纳米线.用XRD，SEM，TEM，HRTEM测定了纳米线的成分、形貌特征、显微结构等.Al3O3N纳米线直径分布为25—110nm，长度达55μm.Al3O3N纳米线是尖晶石结构.另外，对Al3O3N纳米线的生长机理进行了研究. 关键词： 纳米线 等离子体 纳米结构陶瓷 尖晶石结构