Time-resolved two-photon photoemission of buried interface states in Ar/Cu(100)

We demonstrate the existence of buried image-potential states at the interface between thick Ar films and a Cu(100) substrate. The electron dynamics of these solid-solid interface states, energetically located above the vacuum level in the band gaps of both materials, could be investigated with time-resolved two-photon photoemission for an Ar layer thickness up to 200 A. Relaxation on time scales between 40 and 200 fs occurs via two distinct channels, resonant tunneling through the insulating layer into the vacuum and electron-hole pair decay in the metal.     

Quantum-well resonances and image states in the Ar/Cu(1 0 0) system

A theoretical study of the effect of an atomically thin rare gas layer on the dynamics of excited electronic states at metal surfaces is presented for the case of a few mono-layers of Ar on a Cu(1 0 0) surface. We develop a 3D-microscopic model with predictive capabilities of the interaction of an electron with an Ar layer physisorbed on a metal surface. It takes into account the 3D structure of the Ar layer as well as its dielectric character. The dynamics of the excited electron on the surface is treated within a wave-packet propagation approach. The calculations show that two different types of excited states are present at the Ar/Cu(1 0 0) surface. (i) Image states that are repelled into vacuum as compared to their position on clean Cu(1 0 0) surfaces, leading to a decrease of their binding energies and to an increase of their lifetimes. (ii) Quantum-well resonances, corresponding to quasi-stationary states localised inside the Ar layer; they are associated with the quantisation of the conduction band in the finite size Ar layer. The present results on image states nicely agree with very recent time-resolved two-photon-photo-emission experiments by Berthold, Feulner and Höfer.     

Influence of Ar,Kr, and Xe layers on the energies and lifetimes of image-potential states on Cu(100)

The influence of well-ordered adlayers of Ar, Kr, and Xe on the energetic and dynamical properties of image-potential states on Cu(100) has been investigated in a comprehensive study using time-resolved two-photon photoemission (2PPE). The effect of these insulating films varies systematically with the electron affinity EA of the condensed rare gases and with the film thickness. For the electron-repulsive Ar layers (EA=-0.25 eV), a strong lifetime increase of the n=1 state from 40 fs on clean Cu(100) to as much as 10 ps at a coverage of 5 monolayers is observed. For Kr and Xe layers (EA=+0.3 and +0.5 eV, respectively), decoupling from the metal is less efficient. These layers exhibit quantum-well-like resonances of the n=2 state as a function of layer thickness. The energies of the series of states depend characteristically on the affinity level and the dielectric constant of the films. A microscopic model is developed that includes the discrete atomic structure of the adsorbate layers. It is capable of describing the experimental results to a high degree of quantitative agreement. PACS 78.47.+p; 73.20.At; 77.55.+f     

Integration method for directly analyzing interface statistics of periodic multilayers from X‐ray scattering

An integration method is demonstrated for directly determining the average interface statistics of periodic multilayers from the X‐ray scattering diagram. By measuring the X‐ray scattering diagram in the out‐of‐plane geometry and integrating the scattered intensity along the vertical momentum transfer q_z in an interval, which is decided by the thickness ratio Γ (ratio of sublayer's thickness to periodic thickness), the cross‐correlations between different interfaces are canceled and only the autocorrelations are reserved. Then the multilayer can be treated as a `single interface' and the average power spectral density can be obtained without assuming any vertical correlation model. This method has been employed to study the interface morphology of sputter‐deposited W/Si multilayers grown at an Ar pressure of 1–7 mTorr. The results show an increase in vertical correlation length and a decrease in lateral correlation length with increased Ar pressure. The static roughness exponent α = 0 and dynamic growth exponent z = 2 indicate the Edwards–Wilkinson growth model at an Ar pressure of 1–5 mTorr. At an Ar pressure of 7 mTorr, α = 0.35 and z = 1.65 indicate the Kardar–Parisi–Zhang growth model.     

基于多尺度模拟研究Ni/Cu薄膜压痕塑性的原子机制

基于准连续介质多尺度模拟方法研究了Ni/Cu双层薄膜初始压痕塑性的原子机制,结果主要包括:(1)当Ni晶体层厚度小于10nm时,随着Ni晶体层厚度的减少,薄膜弹性极限所对应的临界接触力逐渐降低,即Ni/Cu薄膜随Ni晶体层厚度减小而变软;(2)压头下方晶格Shockley分位错的开动、界面位错的分解、以及界面位错与晶格位错的相互作用是Ni/Cu薄膜初始塑性的微观原子机制,(3)根据模拟结果观察和位错弹性理论计算,承载初始塑性的界面位错数目变少是Ni/Cu薄膜软化的主要原子机制.本文研究结果能够为异质界面力学行为研究提供有益参考.     

Insulating properties of ultrathin KF layers on Cu(1 0 0): Resonant Auger spectroscopy

Solid-state effects in the creation and decay of K 2p core excitations in thin KF films on Cu(1 0 0) surface have been studied in resonant Auger spectra, excited using synchrotron radiation. The spectra of films of various thickness starting from a single monolayer were measured.The photoabsorption spectra reveal crystal field splitting already at film thickness of about 1 monolayer. The Auger decay spectra of the K 2p⁻¹3d core excitations in films of thickness up to 2 monolayers exhibit a band characteristic of the decay of core ionised states, showing that the excited electron delocalises into substrate before the core hole decays. In thicker films the coexistence of the decay of excited states in the bulk of the KF crystalline film and of ionised states at the KF-metal interface is observed, indicating that the charge transfer probability from the upper layers of the film into the metallic substrate is strongly reduced.     

氦对铜钨纳米多层膜界面稳定性的影响

采用射频磁控溅射方法,分别在纯Ar和Ar, He混合气氛下制备了多个不同调制周期的Cu/W纳米多层膜. 利用增强质子背散射(EPBS)、扫描电子显微镜(SEM)、X射线衍射(XRD)分别对Cu/W多层膜中He含量、 截面形貌和相结构进行了分析.结果表明:多层膜的界面稳定性是耐氦损伤的前提和保证. 在适当的调制周期下,纳米多层膜能有抑制氦泡成核及长大的能力.     

Magnetic properties of (111) Cu/Fe multilayers

The magnetic properties of (111) Cu/Fe multilayers grown on Cu underlayers of several thickness (2000-500-50 Å) on cleaved mica have been investigated by Mössbauer spectroscopy and SQUID magnetometry. The analysis of experimental results suggests that 2.5 monolayers of ψ-Fe interfaced with Cu evolves partially from paramagnetic to ferromagnetic states as the Cu underlayer thickness is reduced to 50 Å and partially from weak to strong antiferromagnetism.     

Angle-resolved photoemission study for double Ag nanofilm structures

We have carried out an angle-resolved photoemission study for Ag/Cu/Ag/Cu(1 1 1) system in order to investigate the electronic coupling between the two quantum-well (QW) states in the double Ag nanofilm structures. It is found that the outer nanofilm thickness dependence of QW state in double Ag nanofilm structures can be explained as the electronic coupling through the thin Cu barrier layer between the QW states in the inner and outer Ag nanofilms. It is also found that the coupling strength depends on the Cu barrier thickness. From these results, we discuss the electronic coupling between the two QW states in the double Ag nanofilm structures.     

Diffusion Behavior of Cumulative He Doped in Cu/W Multilayer Nanofilms at Room Temperature

Cu/W multilayer nanofilms are prepared in pure Ar and He/Ar mixing atmosphere by the rf magnetron sputtering method.The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy.The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanoGlms.With the increasing natural storage time,He located in the near surface of the Cu/W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects.However,more He in the deep region spread along the interface of the Cu/W multilayer nanofilm.Meanwhile,the layer interfaces can still maintain their stability.     

Mössbauer investigation of the Fe/Cu interfaces in BCC Fe/Cu/Fe(0 0 1) structures

A RHEED study shows quasi layer-by-layer growth in BCC Fe/Cu/Fe(0 0 1) structures. The BCC stacking of Cu layers is maintained up to a critical thickness of 11 layers. The different iron sites at the Fe/Cu interfaces can be identified by Mössbauer spectroscopy from the distinct values measured for the magnetic hyperfine fields H_hf and isomer shifts at the ⁵⁷Fe nuclei. This makes it possible to determine the concentration of ⁵⁷Fe atoms in the different iron sites. The roughness of the Cu on Fe interface estimated from the Mössbauer study is more pronounced than that estimated from a RHEED study of the structure. The growth of Fe on Cu produces CuFe alloy layers at the Cu/Fe interface.     

Direct observation of exchange bias related uncompensated spins at the CoO/Cu interface

Magnetization-induced optical second harmonic generation (MSHG) from the exchange-biased CoO/Cu-(X)/Fe multilayer shows the presence of pinned uncompensated spins at the CoO/Cu interface. For increasing Cu spacer thickness, the exchange bias measured via the hysteresis loop shift diminishes and disappears at X = 3.5 nm, while the MSHG signal still shows a strong magnetic contribution from the CoO interface. This indicates that the magnetic interaction between Fe and CoO layers is sufficiently strong to induce order in the antiferromagnetic layer even at a spacer thickness for which there is no observable hysteresis loop shift.     

Metal-induced gap states at well defined alkali-halide/metal interfaces

In order to search for states specific to insulator/metal interfaces, we have studied epitaxially grown interfaces with element-selective near edge x-ray absorption fine structure. An extra peak is observed below the bulk edge onset for LiCl films on Cu and Ag substrates. The nature of chemical bonds as probed by x-ray photoemission spectroscopy and Auger electron spectroscopy remains unchanged, so we regard this as evidence for metal-induced gap states (MIGS) formed by the proximity to a metal, rather than local bonds at the interface. The dependence on the film thickness shows that the MIGS are as thin as one monolayer. An ab initio electronic structure calculation supports the existence of the MIGS that are strongly localized at the interface.     

直流磁控溅射YBCO非晶薄膜的卢瑟福背散射研究

利用直流磁控溅射(D.C.Magnetron Sputtering)法,选取总气压为80Pa,沉积时间为60min,溅射靶尺寸为φ80,在磁场强度、靶与基片之间的距离及Ar/O₂比等参数变化的情况下,制备了四组YBCO/Al₂O₃非晶薄膜样品。用MeV Li卢瑟福背散射(RBS)分析技术,测量了各块样品中Ba和Cu相对Y的含量和薄膜厚度随基片的横向分布。分析结果表明:在不同的沉积条件下,薄膜中各点的Ba和Cu相对浓度差别较大,薄膜厚度分布也 关键词：     

Investigation of agglomerated Cu seed on Cu oxidation after chemical mechanical planarization

After chemical mechanical planarization (CMP), the reason which caused the formation of Cu-oxide defects at the interface between Cu deposit and TaN barrier layer has been studied. The experimental results of atomic force microscopy, secondary ion mass spectroscopy, X-ray diffraction demonstrated that the agglomeration phenomenon was found on Cu seed in the thickness of only 10 nm, thus resulting in the electrodeposited Cu film with more abundant C impurities at Cu/TaN interface and lower (1 1 1)/(2 0 0) ratio compared to the thick one (30 nm). Therefore it caused the Cu deposit with poor corrosion resistance and then the Cu-oxide defects were easily formed after CMP. As a result, the correlation between Cu-oxide defects at the Cu/TaN interface and the agglomeration on Cu seed layer was proposed herein.     

Microstructures and strengthening mechanisms of Cu/Ni/W nanolayered composites

Cu/Ni/W nanolayered composites with individual layer thickness ranging from 5?nm to 300?nm were prepared by a magnetron sputtering system. Microstructures and strength of the nanolayered composites were investigated by using the nanoindentation method combined with theoretical analysis. Microstructure characterization revealed that the Cu/Ni/W composite consists of a typical Cu/Ni coherent interface and Cu/W and Ni/W incoherent interfaces. Cu/Ni/W composites have an ultrahigh strength and a large strengthening ability compared with bi-constituent Cu–X (X?=?Ni, W, Au, Ag, Cr, Nb, etc.) nanolayered composites. Summarizing the present results and those reported in the literature, we systematically analyze the origin of the ultrahigh strength and its length scale dependence by taking into account the constituent layer properties, layer scales and heterogeneous layer/layer interface characteristics, including lattice and modulus mismatch as well as interface structure.     

多弧离子镀TiN与不同金属基材间的接触界面与表面特性

用多弧离子镀技术在不同金属基材上进行TiN镀膜实验 ,制备了TiN/Fe、TiN/Cu和TiN/Cr/Cu复合膜 .借助扫描电子显微镜 (SEM)、X射线衍射仪 (XRD)和光电子能谱 (XPS) ,研究了TiN与Fe、Cu和Cr/Cu三种不同衬底接触界面的形貌、结构及其表面特性 .SEM观察发现 ,在一定离子镀膜条件下 ,TiN涂层可与Fe、Cu和Cr/Cu金属基材形成均匀平整的接触界面 ,在铜基上TiN界面清晰 ,在Fe与Cr/Cu界面有明显的层状晶界微结晶分布 .XRD分析显示 ,Fe、Cu和Cr/Cu表面生成的薄膜都包含TiN、Ti2 N等多晶相 ,在Cr/Cu界面还包含Ti-Cr的金属间化合物 .XPS结果表明 ,表面除了TiN膜外 ,还生成TiO2 和TiOxNy 等氧化膜 .Ar+ 刻蚀 5min后 ,TiO2 消失 ,TiOxNy 减少 ,TiN则呈增加趋势 .TiN与Cr/Cu界面形成明显的Ti-Cr和Cr-Ni互扩散层 ,这有助于增强薄膜附着力 ,形成较牢固的TiN涂层 .