反铁磁半金属EuCd_2Pn_2(Pn=As,Sb)中磁交换诱导的外尔态（英文）

由于丰富的拓扑量子效应及巨大的潜在应用价值,拓扑材料逐渐成为凝聚态物理前沿的研究材料体系。其中,作为与石墨烯具有相似电子结构的材料,三维拓扑半金属吸引了越来越多的研究兴趣。目前已知的拓扑半金属大多为非磁性的,而磁性拓扑半金属数量有限,与非磁性拓扑半金属相比较,研究开展的还比较少。磁性与拓扑之间的相互作用能够导致非常规的物理性质,如反常霍尔效应甚至量子反常霍尔效应等。此外,在一些具有特殊磁结构的拓扑半金属中,施加外磁场能够调制其自旋结构,从而影响其拓扑能带结构。在该综述中,笔者将详细介绍利用外磁场在EuCd_2Pn_2(Pn=As, Sb)反铁磁半金属材料中通过调制自旋结构从而改变晶体结构对称性来诱导拓扑相变。此外,笔者也将简单介绍包括GdPtBi和MnBi_2Te_4在内的几个相关材料。该综述中讨论的外磁场调控的磁交换诱导的拓扑相变不仅有望应用于拓扑器件,也有助于为理解磁性与拓扑态之间的紧密关联提供新的线索,对于设计新的磁性拓扑材料有启发意义。综述最后,笔者对发展磁性拓扑半金属做了一些简单展望。     

铁磁/非磁金属异质结中的拓扑霍尔效应

在铁磁/非磁金属异质结中,界面处的Dzyaloshinskii-Moriya相互作用会诱导诸如磁性斯格明子等手性磁畴壁结构的形成.当巡游电子通过手性磁畴壁结构时,会获得一个贝里相位,而相应的贝里曲率则等效于一个外磁场,它将诱导额外的霍尔效应,即拓扑霍尔效应.拓扑霍尔效应是当前磁性斯格明子和自旋电子学研究领域的热点之一.本文由实空间贝里相位出发,简要介绍了拓扑霍尔效应的物理机制;然后着重讨论了铁磁/非磁金属异质结中的拓扑霍尔效应,包括磁性多层膜中和MnGa/重金属双层膜中的拓扑霍尔效应.这两种结构都可以通过改变材料的厚度、种类、生长方式等调控界面Dzyaloshinskii-Moriya相互作用,从而有效地调控磁性斯格明子和拓扑霍尔效应.     

圆环结构磁光光子晶体中的拓扑相变

二维圆环结构的三角晶格磁光光子晶体中可以呈现多重拓扑相.在不同的几何参数和磁场下,这些拓扑相包括正常光子带隙相、量子自旋霍尔相和反常量子霍尔相.与文献[1]类似,该结果展现了二维光子晶体丰富的拓扑相变现象.     

Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

磁序与拓扑的耦合:从基础物理到拓扑磁电子学

磁学与拓扑物理是两大较为成熟的学科,二者的结合是新一代磁电子学的需求和基础.磁性拓扑材料是磁序与拓扑物理耦合的重要产物,为新兴的拓扑物理提供了材料载体和调控自由度.磁性外尔半金属实现了时间反演对称破缺下的外尔费米子拓扑物态,通过拓扑增强的贝利曲率产生了一系列新奇的磁/电/热/光效应;而外尔电子与磁序的相互作用也使得拓扑电子物理有望成为磁电子学应用的新原理和驱动力.当前,新物态与新效应的发现是磁性拓扑材料第一阶段的主要任务和特征,而动量空间拓扑电子与实空间磁序的相互作用已经开始进入人们的视野.这两个阶段的深入发展,将为拓扑磁电子学积累必要的物理基础和应用尝试.本文着眼于磁性拓扑材料发展的两个阶段,讲述磁性拓扑材料的提出和实现、均一磁序下的拓扑电子态及新奇物性、局域磁态与拓扑电子的相互作用3个方面,阐述当前领域内的热点内容和发展趋势,并对拓扑磁电子学的未来发展进行了思考和展望,以助力未来拓扑自旋量子器件的快速发展.     

磁性拓扑绝缘体与量子反常霍尔效应

量子反常霍尔绝缘体,有时也被称为陈数绝缘体,是不同于普通绝缘体和拓扑绝缘体的一类新的二维绝缘体,该体系具有可被实验观测的特殊物理性质—量子反常霍尔效应。该体系的物态不能用朗道对称性破缺理论来描写,而要用到拓扑物态的概念。它的发现也经历了从反常霍尔效应的内秉物性阐释,到量子自旋霍尔效应与拓扑绝缘体的发现,再到磁性拓扑绝缘体的理论预测与实现,并最终成功实验观测的漫长过程。由于量子反常霍尔效应的实现不需要外加磁场,而此时样品的边缘态可以被看成一根无能耗的理想导线,因此人们对于其将来可能的应用充满了期待。本文将从理论的角度简单综述该领域的发展历程、基本概念、以及相关的材料系统。     

拓扑量子材料光电探测器研究进展

物质拓扑态的发现是近年来凝聚态物理和材料科学的重大突破。由于存在不同于常规半导体的特殊拓扑量子态(如狄拉克费米子、外尔费米子、马约拉纳费米子等),拓扑量子材料通常能表现出一些新颖的物理特性(如量子反常霍尔效应、三维量子霍尔效应、零带隙的拓扑态、超高的载流子迁移率等),因而在低能耗电子器件和宽光谱光电探测器件领域具有重要的研究价值。本文综述了拓扑量子材料的特性与制备方法以及在光电探测领域的发展现状,重点讨论了拓扑绝缘体与拓扑半金属宽光谱光电探测器的器件结构与性能,同时也对拓扑量子材料在光电探测器领域的发展前景进行了展望。     

拓扑半金属-超导体异质结的约瑟夫森效应

拓扑半金属是一类受对称性保护的无能隙量子材料.因其相对论性能带色散关系,拓扑半金属中涌现出丰富的量子态和量子效应,例如费米弧表面态和手征反常.近年来,因在拓扑量子计算的潜在应用,拓扑与超导的耦合体系受到广泛关注.本文从两方面回顾拓扑半金属-超导体异质结体系近年来的实验进展:1)超导电流对拓扑量子态的模式过滤; 2)拓扑超导和Majorana零能模的探测与调控.对于前者,利用约瑟夫森电流对电磁场的响应,拓扑半金属中费米弧表面态的弹道输运被揭示,高阶拓扑半金属相被证实,有限动量配对及超导二极管效应被实现.对于后者,通过交流约瑟夫森效应,狄拉克半金属中4π周期的拓扑超导态被发现,纯电学栅压调控的拓扑相变被实现.本文最后展望了拓扑半金属-超导体异质结体系的发展前景和在Majorana零能模编织和拓扑量子计算上的潜在应用.     

拓扑新材料研究前沿的理论基础导引Ⅱ：多种拓扑材料

本专题旨在为感兴趣且学有余力的本科生和低年级研究生提供一条从大学物理到当前二维、三维拓扑新材料研究前沿的学习路径。专题包含两篇，本文是第二篇。基于第一篇回顾过的各种量子霍尔效应及其中的拓扑不变量，本篇介绍多种新材料，包括石墨烯、拓扑绝缘体和拓扑半金属。重点将放在晶格结构的紧束缚模型处理，以蜂窝六角晶格和方晶格为例推导出描述量子反常霍尔效应的两带模型，介绍能带结构与拓扑不变量(陈数、拓扑映射度等)的联系及其所导致的体-边对应关系(bulk-boundary correspondence)。其中自旋轨道耦合(spin-orbitcoupling)的写法、哈密顿量的傅里叶(Fourier)变换、能带结构的求解、拓扑不变量及边缘态的计算都有助于夯实初学者的理论基础。另外本篇还将简述不同种类的拓扑半金属的能带结构及其表面态。     

磁场中拓扑物态的量子输运

拓扑物态包括拓扑绝缘体、拓扑半金属以及拓扑超导体.拓扑物态奇异的能带结构以及受拓扑保护的新奇表面态,使其具有了独特的输运性质.拓扑半金属作为物质的一种三维拓扑态具有无能隙的准粒子激发,根据导带和价带的接触类型分为外尔半金属、狄拉克半金属和节线半金属.本文以拓扑半金属为主回顾了在磁场下拓扑物态中量子输运的最新工作,在不同的磁场范围内分别给出了描述拓扑物态输运行为的主要理论.     

Hybrid Dispersion Dirac Semimetal and Hybrid Weyl Phases in Luttinger Semimetals: A Dynamical Approach

It is shown that hybrid Dirac and Weyl semimetals can be realized in a 3D Luttinger semimetal with quadratic band touching (QBT). This is illustrated using a periodic kicking scheme. In particular, the focus is on a momentum-dependent driving (nonuniform driving) and the realization of various hybrid Dirac and Weyl semimetals is demonstrated. A unique hybrid dispersion Dirac semimetal with two nodes is identified, where one of the nodes is linear while the other is dispersed quadratically. Next, it is shown that by tilting QBT via periodic driving and in the presence of an external magnetic field, one can realize various single/double hybrid Weyl semimetals depending on the strength of external field. Finally, it is noted that in principle, phases that are found in this work can also be realized by employing the appropriate electronic interactions.     

Topological nodal line semimetals

We review the recent,mainly theoretical,progress in the study of topological nodal line semimetals in three dimensions.In these semimetals,the conduction and the valence bands cross each other along a one-dimensional curve in the three-dimensional Brillouin zone,and any perturbation that preserves a certain symmetry group(generated by either spatial symmetries or time-reversal symmetry) cannot remove this crossing line and open a full direct gap between the two bands.The nodal line(s) is hence topologically protected by the symmetry group,and can be associated with a topological invariant.In this review,(ⅰ) we enumerate the symmetry groups that may protect a topological nodal line;(ⅱ) we write down the explicit form of the topological invariant for each of these symmetry groups in terms of the wave functions on the Fermi surface,establishing a topological classification;(ⅲ) for certain classes,we review the proposals for the realization of these semimetals in real materials;(ⅳ) we discuss different scenarios that when the protecting symmetry is broken,how a topological nodal line semimetal becomes Weyl semimetals,Dirac semimetals,and other topological phases;and(ⅴ) we discuss the possible physical effects accessible to experimental probes in these materials.     

Topological hinge modes in Dirac semimetals

Dirac semimetals (DSMs) are an important class of topological states of matter. Here, focusing on DSMs of band inversion type, we investigate their boundary modes from the effective model perspective. We show that in order to properly capture the boundary modes, k-cubic terms must be included in the effective model, which would drive an evolution of surface degeneracy manifold from a nodal line to a nodal point. Sizable k-cubic terms are also needed for better exposing the topological hinge modes in the spectrum. Using first-principles calculations, we demonstrate that this feature and the topological hinge modes can be clearly exhibited in β-CuI. We extend the discussion to magnetic DSMs and show that the time-reversal symmetry breaking can gap out the surface bands and hence is beneficial for the experimental detection of hinge modes. Furthermore, we show that magnetic DSMs serve as a parent state for realizing multiple other higher-order topological phases, including higher-order Weyl-point/nodal-line semimetals and higher-order topological insulators.     

Tunable anisotropic anomalous Nernst effect and orbital magnetization in Floquet Weyl semimetals

Weyl semimetals and nodal line semimetals display a host of novel properties. Floquet Weyl semimetals with tunable Weyl points can be obtained from nodal line semimetals under the circularly polarized off-resonant light. Here we theoretically investigate the anomalous Nernst effect and orbital magnetization in Floquet Weyl semimetals. Due to the anisotropy of the band structure in Floquet Weyl semimetals, highly anisotropic Berry phase mediated anomalous Nernst effect and orbital magnetization in the absence of magnetic field are observed, indicating orientation-dependent applications in the design of nanodevices. The amplitude and sign of anomalous Nernst coefficient and orbital magnetization can be tuned by the light direction, amplitude and polarization. The effect of the chemical potential on anomalous Nernst coefficient and orbital magnetization is also discussed. The light-modulated anomalous Nernst effect and orbital magnetization make Floquet Weyl semimetals potential candidates for thermoelectric devices.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.     

Predication of topological states in the allotropes of group-IV elements

Three-dimensional (3D) topological insulators (TIs) have been studied for approximately fifteen years, but those made from group-IV elements, especially Ge and Sn, seem particularly attractive owing to their nontoxicity, sizable intrinsic spin–orbit coupling (SOC) strength and natural compatibility with the current semiconductor industry. However, group-IV elemental TIs have rarely been reported, except for the low temperature phase of α-Sn under strain. Here, based on first-principles calculations, we propose new allotropes of Ge and Sn, named T5-Ge/Sn, as desirable TIs. These new allotropes are also highly anisotropic Dirac semimetals if the SOC is turned off. To the best of our knowledge, T5-Ge/Sn are the first 3D allotropes of Ge/Sn that possess topological states in their equilibrium states at room temperature. Additionally, their isostructures of C and Si are metastable indirect and direct semiconductors. Our work not only reveals two promising TIs, but more profoundly, we justify the advantages of group-IV elements as topological quantum materials (TQMs) for fundamental research and potential practical applications, and thus reveal a new direction in the search for desirable TQMs.     

Two-dimensional topological semimetals

The field of two-dimensional topological semimetals, which emerged at the intersection of two-dimensional materials and topological materials, has been rapidly developing in recent years. In this article, we briefly review the progress in this field. Our focus is on the basic concepts and notions, in order to convey a coherent overview of the field. Some material examples are discussed to illustrate the concepts. We discuss the outstanding problems in the field that need to be addressed in future research.     

Topological transport in Dirac electronic systems:A concise review

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological phases. In this topical review, transport properties of topological insulator(Bi2Se3), topological Dirac semimetal(Cd3As2), and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems,including topological edge transport, topological valley transport, and topological Weyl semimetals, are provided.