Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures

To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS) scattering,polar optical phonon(POP) scattering,piezoelectric field(PE) scattering,interface roughness(IFR) scattering,deformation potential(DP) scattering,alloy disorder(ADO) scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH) is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2 DEG) density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.0)4 N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.     

Acoustic waves in (001) InN–AlN and InN–GaN superlattices

We study the acoustic waves of (001) InN–AlN and InN–GaN superlattices. We obtain the dispersion curves for various symmetric and general orientations of the wavevector parallel to the interfaces. The results reveal the impact of the elastic anisotropy due to the zinc-blende structure of the constituent materials. It is found that for certain material parameters and orientations, the dispersion curves exhibit wide gaps with potential for the existence of surface localized waves.     

AlN/InN和AlN/GaN超晶格能带结构研究

利用Krönig-Penney 模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须 关键词： AlN/InN和AlN/GaN超晶格 Krönig-Penney模型 应变 子能带     

Formation and properties of rocksalt-type AlN and implications for high pressure phase relations in the system Si–Al–O–N

Pressure-dependent thermodynamic properties of the ambient and high pressure phases of aluminum nitride (w-AlN and rs-AlN) were calculated from first principles in order to determine their phase boundary in the p? T phase diagram. These predictions were checked by static HP/HT experiments, using a multianvil press and an Al/N/H precursor with low decomposition temperature as educt. The experimental data show that at temperatures between 1000 and 2000 K, the boundary line between the two phases is situated between 11 and 12 GPa, which is ～1.3 GPa lower than the theoretical result and generally lower than previously assumed. The hardness of rs-AlN – measured for the first time – is ～30 GPa (Knoop indenter at loads of 25–50 g), twice as hard as w-AlN. Shock wave recovery experiments on nano w-AlN allowed testing of the chemical and thermal stability of rs-AlN, and determination of its infrared absorption and ²⁷Al NMR data. The shock wave technique will eventually enable the synthesis of larger amounts of rs-AlN, making it available for technological use. Finally, implications on the high pressure stability of phases in the Si–Al–O–N system are discussed in the light of thermoelastic properties of AlN.     

AlN隔离层生长时间对AlGaN/AlN/GaN HEMT材料电学性能的影响

利用金属有机化学气相沉积（MOCVD）设备,在蓝宝石（0001）面上外延不同生长时间AlN隔离层的Al_xGa_1-xN/AlN/GaN结构的高电子迁移率的晶体管（HEMT）,研究了AlN隔离层厚度对HEMT材料电学性能的影响。研究发现采用脉冲法外延（PALE）技术生长AlN隔离层的时间为12 s（1 nm左右）时,HEMT材料的方块电阻最小,电子迁移率为1 500 cm²·V^-1·s^-1,二维电子气（2DEG）浓度为1.16×10¹³ cm^-2。AFM测试结果表明,一定厚度范围内的AlN隔离层并不会对材料的表面形貌产生重大的影响。HRXRD测试结果表明,AlGaN/AlN/GaN具有好的异质结界面。     

Rotating Einstein–Maxwell–dilaton black holes in D dimensions

We construct exact charged rotating black holes in Einstein–Maxwell–dilaton theory in D   spacetime dimensions, D?5$D?5$, by embedding the D  -dimensional Myers–Perry solutions in D+1$D+1$ dimensions, and performing a boost with a subsequent Kaluza–Klein reduction. Like the Myers–Perry solutions, these black holes generically possess N=[(D−1)/2]$N=[(D-1)/2]$ independent angular momenta. We present the global and horizon properties of these black holes, and discuss their domains of existence.     

Cardy–Verlinde formula in Taub–NUT/Bolt–(A)dS space

We consider a finite action for a higher dimensional Taub–NUT/Bolt–(A)dS space via the so-called counter term subtraction method. In the limit of high temperature, we show that the Cardy–Verlinde formula holds for the Taub–Bolt–AdS metric and for the specific dimensional Taub–NUT–(A)dS metric, except for the Taub–Bolt–dS metric.     

Afterglow in bulk AlN single crystals under β-irradiation

Regularities of afterglow at room temperature and of thermoluminescence at further heating up to 673 K have been studied in bulk aluminum nitride single crystals. It has been established that after exposure to β-irradiation luminescence decay at RT may be described by superposition of two exponential components: fast (59 s) and slow (606 s) ones, caused by defects of the anion crystal sublattice O_N- and V_N-centers, respectively. The afterglow spectrum is shown to be characterized by the 3.43 eV band with FWHM=0.61 eV that dominates also in the thermoluminescence under study. From analysis of the TL curves in terms of the general order formalism it has been concluded that variation of the activation energy observed within the 0.46–0.85 eV range with increasing storage of the samples from 5 min to 3 days may be caused by energy distribution of traps on the basis of oxygen-related centers. For the first time the compensation effect has been found, and phenomenologically interpreted for the TL processes of the AlN single crystals. Isokinetic temperature has been estimated within the framework of empiric and non-empiric relations.     

μ–τ symmetry in Zee–Babu model

We study the Zee–Babu two-loop neutrino mass generation model and look for a possible flavor symmetry behind the tri-bimaximal neutrino mixing. We find that there probably exists the μ–τ   symmetry in the case of the normal neutrino mass hierarchy, whereas there may not be in the inverted hierarchy case. We also propose a specific model based on a Froggatt–Nielsen-like Z₅$Z_5$ symmetry to naturally accomplish the μ–τ symmetry on the neutrino mass matrix for the normal hierarchy case.     

Effect of aluminum content on the mechanochemical synthesis of in-situ TiN in the Al–Ti–AlN system and subsequent shock consolidation

To determine the effect of aluminum content on the formation of in-situ TiN in the Al–Ti–AlN system, a mixture of aluminum, titanium and aluminum nitride powders was subjected to high energy milling. Al content of the mixture was changed according to the following stoichiometric reaction: Ti+AlN+XAl→TiN+(1+X)Al. The value of X was varied from 5.35 to 19.65 based on the stoichiometric calculation of the molar mass of each component expected to result in aluminum matrix composite with TiN weights of 30%, 20% and 10%, respectively, in addition to reaction corresponding to X=0(Ti+AlN→TiN+Al). Thermodynamic factors determine that the amount of Al in the mixture plays a key role in the formation of in-situ TiN. XRD and EPMA results showed that at lower Al content (X=0, 5.35), reaction proceed through a gradual mode. By increasing Al content (X=19.65), no mechanochemical reaction occurred between Ti and AlN. Continuation of the milling process allowed acquisition of in-situ TiN in the designed compositions of AlN–TiN, Al–Ti–AlN–30%TiN, and to some extent, of Al–Ti–AlN–20%TiN. A nanocrystalline solid solution evolved by mechanical alloying (MA) was sustained for prolonged milling time. The mean TiN crystallite size obtained was 10 nm for the AlN–TiN composition. The end product milled powder after 40 h of milling time, equating to the Al–Ti–AlN–30%TiN composition was consolidated into bulk compact using the underwater shock compaction method. The milled specimens were characterized by XRD, scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and microhardness testing. The sample had a uniform and fine-grained composite structure with 99% theoretical density and average microhardness of 434 HV0.1. The results confirmed the possibility of fabricating reliable bulk nanostructured materials by imposing shock compaction on submicron sized powders.     

GdFeCo/AlN/TbFeCo薄膜的变温磁化性能研究

用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质     

Texturing in a Ni–W/TiN Thin-Film System

Double-layer thin-film compositions with a TiN coating based on a ferromagnetic Ni–5 at % W alloy and a paramagnetic Ni–9.5 at % W alloy have been prepared. Texturing in both components of the Ni–W/TiN system has been studied using X-ray diffraction analysis. It has been found that the coating layer causes crystal planes in the Ni–9.5 at % W strip to reorient and thereby enhances the cube texture in the substrate. It has been shown that under certain growth conditions, a thin TiN coating above the Ni–9.5 at % W/TiN substrate grows quasi-single-crystalline with a cube texture.     

AlN/蓝宝石模板上生长的GaN研究

研究了在分子束外延制备的AlN/蓝宝石模板上采用金属有机物化学气相外延生长的非故意掺杂GaN的材料性质.采用X射线衍射(XRD)、透射电镜(TEM)和原子力显微镜研究了AlN模板的晶体质量和表面相貌对GaN的影响.结果表明,当AlN的表面粗糙度较小时,尽管AlN模板的位错密度较高((102)面XRD ω扫描半高全宽900—1500 arcsec),但生长得到的GaN依然具有和在蓝宝石衬底上采用"二步法"生长的GaN可比拟的晶体质量((002)面XRD ω扫描半高全宽200—30 关键词： 氮化镓 氮化铝 金属有机物化学气相外延     

Spin–triplet current in half metal/conical helimagnet/superconductor heterojunctions

The BTK theory is extended to investigate spin–triplet current and differential conductance spectrum in the half metal/conical helimagnet (Holmium)/s-wave superconductor heterojunctions. We show that the effective spin–split and spin–flip scatterings of the Holmium layer control the conversion efficiency between the spin–singlet and equal-spin triplet pair correlations, leading to a tunneling current oscillation with the thickness of the Holmium layer. This can provide qualitative explanations on the current oscillation in Ho/Co/Ho-based Josephson junction experiment. The differential conductance spectrum confirms spin–flip Andreev reflection induced long-ranged equal-spin triplet pair correlations.     

Parity violation in the 17/2−–17/2+ doublet in93Tc

The parity-violating mixing of the 17/2^– and 17/2⁺ levels in⁹³Tc nuclei, polarized by the tilted multifoil interaction, was measured by the observation of the forward-backward-ray asymmetry. The nuclear polarization, induced by the tilted multifoils, was measured directly for the neighboring^88,90Zr isomers. The forward to backward asymmetry was determined to be A=(2.5±2.1) 10^–3 which implies a parity violating matrix element ¦H _PV )¦=(4.0±3.7)meV.     

NbN/AlN/NbN超导隧道结的制备工艺

研究了在MgO基片上制备NbN/AlN/NbN结的工艺,NbN和AlN的制备分别采用直流磁控溅射和交流磁控溅射。为了得到良好特性的隧道结,首先要在高真空反应室里沉积三层膜结构,经过光刻和反应离子刻蚀,得到底电极和桥区的三层结构图形。再经过第二步光刻和刻蚀,仅保留底电极最下层的NbN,得到结区的三层结构图形,并覆盖AlN绝缘层。经过Lift-off工艺,洗去结区上的光刻胶,最后沉积上电极。使用四端子方法对制备的隧道结进行了一系列测量,特别是在高频(THz)下的响应。     

Multiplicities in84Kr interactions in emulsion at 800–950 MeV/nucleon

Inelastic interactions induced by⁸⁴Kr nuclei at 800–950 MeV/nucleon have been studied using a high angular resolution emulsion detector. Data on multiplicities of the produced particles, projectile and target fragments are shown. Comparisons with cascade calculations have been performed.We thank to Swedish Research Council for Natural Sciences for the financial support. Scanning and measurements performed by E.G. Broomé and V. Kopljar are acknowledged.