粘性空腔流的格子Bcltzmann方法模拟

利用１３ 速六方格子Ｂｏｌｔｚｍａｎｎ 方法模拟了粘性空腔流中流速、密度及温度的分布情况，并考察了当τ＝ ０－６３８６ 时，流场分布的不稳定性     

Couette流和空腔粘性流的格子Boltzmann方法模拟

采用１３速六方格子Ｂｏｌｔｚｍａｎｎ方程研究Ｃｏｕｅｔｔｅ流和空腔粘性流,模拟了在Ｐｒ＝０．９１,Ｒｅ＝１００,５０００,及Ｐｒ＝０．９１,１,１．２５而Ｒｅ＝３０００情总下Ｃｏｕｅｔｔｅ流流场的速度、温度分布,研究了热输运过程;同时用该模型拟了高雷诺数的空腔粘性流流场演化稳定后,形成的涡旋的形状及腔内温度分布情况。     

黏性应力与脉动流强化传热相关性的LBM研究

为研究黏性应力与脉动流强化传热的相关性,编写了基于D2Q9格式的格子玻尔兹曼数值模拟程序,获得了雷诺数Re=120时脉动流中等温圆柱体当地努塞尔数和无量纲黏性应力的分布特性。格子玻尔兹曼数值模拟程序采用双概率密度函数模型,圆柱体曲边界采用二阶精度的外推方法处理。数值模拟结果显示,无量纲的黏性应力与脉动流强化传热效果具有正相关特性。脉动流通过增加圆柱体迎风面的黏性应力,从而实现强化传热。     

Couette流和空腔粘性流的格子Boltzmann方法模拟

采用13速六方格子Boltzmann方法研究Couette流和空腔粘性流，模拟了在Pr=0．91，Re=100，5000，及Pr=0．91，1，1．25而Re=3000情况下Couette流流场的速度、温度分布，研究了热输运过程；同时用该模型模拟了高雷诺数的空腔粘性流流场演化稳定后，形成的涡旋的形状及腔内温度分布情况。     

二维顶盖驱动半圆腔内流动MRT-LBM研究

本文采用多弛豫时间格子玻尔兹曼方法(multi relaxation time lattice Boltzmann method—MRT LBM)对二维顶盖驱动半圆腔内流动进行了数值模拟,得到了雷诺数为500～50000范围内半圆腔内流场分布情况。在二维顶盖驱动半圆腔流场中,随雷诺数的增大,流场内旋涡的数目逐渐增加,且流动依次呈现出稳定流、周期流、混沌流等状态。本文计算结果表明,MRT-LBM模型可显著提高计算的稳定性,适用于大范围的雷诺数流动情况。     

用格子BGK模型模拟空腔粘性流

利用13速六方格子BGK模型模拟了空腔边界温度低于空腔内部温度的空腔粘性流。给出了腔中热的输运过程及流场速度、密度和温度宏观分布的合理结果。     

驱动模式对具有库源平衡的黏性流体中空间反射时间反演联合对称性的影响

满足空间反射时间反演parity and time-reversal(PT)联合对称性的库源平衡宏观开放系统近几年成为一个研究热点.本文将PT对称性引入到动力学系统,用格子玻尔兹曼方法求解Navier-Stokes方程,发现在二维黏性流体中,如果进口和出口的条件完全等同,在低雷诺数流动中,流场的PT对称函数(ρ)随雷诺数(Re)的增高以ρn～Ren指数增长.用三种不同的速度剖面来驱动流体,计算流场达到稳定状态时的PT对称性.结果发现,进出口平衡的黏性管流中,ρn～Ren的规律在三种驱动模式中出现,表明流场的PT对称性是由流体本身决定的,与驱动模式没有关系,从此论证所得到的指数率的谱适性.     

串列平板叶栅尾迹速度场的LDA实验研究

绕流叶栅的尾涡脱落是诱发水力机械振动噪声的重要因素。本文以串列布置平板叶栅为研究对象,进行雷诺数Re=5000与10000下的叶栅绕流尾迹速度场的LDA测量实验,分析不同雷诺数下绕叶栅流场速度分布,探究涡脱频率特性。实验结果表明:同一雷诺数下平板尾迹区中心线上速度分布可分为回流区、快速增长区、缓慢增长区三个区域;双平板绕流场,下游平板的存在明显抑制了上游平板尾迹的发展,与单平板模型比回流区流向长度减小;雷诺数从5000增大到10000时,平板尾迹回流区的流向长度变小,但最低流速分布升高;下游平板的存在抑制了上游平板的涡脱,使其频率降低,上、下游平板涡脱频率一致。     

串列平板叶栅尾迹速度场的LDA实验研究

绕流叶栅的尾涡脱落是诱发水力机械振动噪声的重要因素。本文以串列布置平板叶栅为研究对象,进行雷诺数Re=5000与10000下的叶栅绕流尾迹速度场的LDA测量实验,分析不同雷诺数下绕叶栅流场速度分布,探究涡脱频率特性。实验结果表明:同一雷诺数下平板尾迹区中心线上速度分布可分为回流区、快速增长区、缓慢增长区三个区域;双平板绕流场中下游平板的存在明显抑制了上游平板尾迹的发展,与单平板模型相比回流区流向长度减小;雷诺数从5000增大到10000时,平板尾迹回流区的流向长度变小,但最低流速分布升高;下游平板的存在抑制了上游平板的涡脱,使其频率降低,上、下游平板涡脱频率一致。     

离心压气机轮盘空腔流场计算与分析

通过对离心压气机与轮盘空腔耦合流场的计算分析,得到了轮盘空腔流动的基本流场结构和动力特性.在不同离心压气机工况和空腔泄漏流模式下,分析了轮盘空腔与离心压气机的耦合关系,给出了轮盘空腔对离心压气机流场细节、推力、功率和效率的影响及各自的变化规律,并说明了其内在机理.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

What can we learn from B→DsKπ, Bd→DsKπ and Bd→DsK decays?

We study the nonresonant three-body decays of B⁺→D^(*)−_sK⁺π⁺ and B_d→D_s^(*)−K⁰π⁺. We find that these decays can provide the information on the time-like form factors of D^(*)_sK. We also explicitly investigate B_d→D_s^(*)−K^*+ decays by discriminating the nonresonant contributions with the unknown D^(*)_s wave functions being fixed by the measured mode of B_d→D_s⁻K⁺.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.