ZnCdse－ZnSe多量子阱中的激子发光

在７７－３００Ｋ温度下研究了Ｚｎ（１－ｘ）ＣｄｘＳｅ－ＺｎＳｅ多量子阱（ＭＱＷｓ）的光致发光特性．首次在７７Ｋ，Ａｒ离子激光器的４５７．９ｎｍ激发下，在Ｚｎ（０．６８）Ｃｄ（０．３２）Ｓｅ－ＺｎｓｅＭＱＷｓ中观测到５个发光带，其中三个发光带被归因于不同的激子发射：即ｎ＝１重空穴（ＨＨ）激子；ｎ＝ｌ轻－重空穴（ＬＨ）激子和ｎ＝ＩＨＨ激子同时发射两个纵光学声子的复合发光，并且，；ｎ＝１ＨＨ激子发光可延续至室温．     

四氯合铜酸苯铵盐的结构及其红外与拉曼光谱研究

制备了四氯四铜酸苯铵盐（Ｃ６Ｈ５ＮＨ３）２ＣｕＣｌ４单晶，Ｍｒ＝１８７．２６，由四园衍射数据确定了晶体结构，晶体属单斜晶系，空间群Ｐ２１／ａ，ａ＝０．７１８４（１），ｂ＝０．７４４８（２），ｃ＝１．５０７０（４）ｎｍ，β＝１００．６７（２）°，Ｖ＝０．７９２４ｎｍ＾３，Ｚ＝２，Ｄｘ＝１．６５０ｇｃｍ＾－３，（Ｍｏ，Ｋａ）＝０．０７１０６９ｎｍ，μ＝４．０５６ｍｍ＾－１，Ｆ（０００）＝３８９，Ｒ＝０     

新型（Pb，Cd）－1222相化合物的制备、结构和电学性质

本文成功地合成了一系列新型Ｐｂ－１２２２相层状铜氧化物（Ｐｂ０．５Ｃｄ０．５）（Ｓｒ０．９Ｒ０．１）２（Ｒ＇０．７Ｃｅ０．３）２。Ｃｕ２Ｏｘ，Ｒ＝Ｒ＇＝Ｙ，Ｐｒ，Ｓｍ，Ｅｕ，Ｇｄ，Ｄｙ，Ｈｏ以及（Ｒ，Ｒ’）＝（Ｌａ，Ｅｕ），（Ｓｍ，Ｇｄ），（Ｓｍ，Ｅｕ），（Ｌａ，Ｇｄ），（Ｅｕ，Ｇｄ），（Ｎｄ，Ｅｕ），（Ｎｄ，Ｄｙ），（Ｎｄ，Ｙ），（Ｎｄ，Ｅｒ）．Ｘ－射线衍射和电子衍射表明它们属于四方晶系，其结构与（Ｐｂ，ＣＵ）－１２２２相结构相似．其中（Ｒ＇，Ｒ＇）＝（Ｅｕ，Ｇｄ）的样品在氧气中成相得到２３Ｋ的超导转变临界温度．     

高Tc超导体YBaCuO（F）：磁性和ESR测量

本研究高Ｔｃ大块超导体ＹＢａ２Ｃｕ３Ｏ７－ｂ（Ｆｘ）（其中ｘ＝０．０，０．５，０．７５，１．０，１．５，２．０，２．５）的磁性。Ｘ射线衍射实验表明相当多的Ｆ进入了ＹＢａＣｕＯ（１２３）晶格并被Ｏ空位俘获。用振动样品磁强计（ＶＳＷ）测试这些样品的质量比磁矩σ与温度Ｔ的关系，以及抗磁性磁滞回线。未掺氟样品的Ｔｃ为８９Ｋ，掺Ｆ（ｘ＝０．７５）的样品具有最高的Ｔｃ０＝９３Ｋ和最强的抗磁性。在１５０Ｋ样品     

新型（Pb,Cd）—1222相化合物的制备,结构和电学性质

本成功地合成了一系列新型Ｐｂ－１２２２相层状铜氧化物（Ｐｂ０．５Ｃｄ０．５）（Ｓｒ０．９Ｒ０．１）２（Ｒ‘０．７Ｃｅ０．３）２Ｃｕ２Ｏｚ，Ｒ＝Ｒ’＝Ｙ，Ｐｒ，Ｓｍ，Ｅｕ，Ｇｄ，Ｄｙ，Ｈｏ以有（Ｒ，Ｒ‘）＝（Ｌａ，Ｅｕ），Ｓｍ，Ｇｄ），（Ｓｍ，Ｅｕ），（Ｌａ，Ｇｄ），（Ｅｕ，Ｇｄ），（Ｎｄ，Ｄｙ），（Ｎｄ，Ｙ），（Ｎｄ，Ｅｒ）。     

LaH2分子基态（C2V,A1）的势能函数

在ＱＣＩＳＤ水平上基于相对论紧致有效势（ＲＣＥＰ：Ｒｅｌａｔｉｖｉｓｔｉｃ Ｃｏｍｐａｃｔ Ｅｆｆｅｃｔｉｖｅ Ｐｏｔｅｎ－ｔｉａｌ）方法优化出ＬａＨ２分子的基态为Ｃ２ｖ（Ｘ＾２Ａ１）构型,其〈ＨＬａＨ－１２４４°、平衡核间距Ｒｅ＝２．１９４５Ａ和离子解能Ｄｅ＝５．５９９ｅＶ,并计算出谐振频率：ｖ１＝１２１６．５２１ｃｍ＾－１、ｖ２＝１０８７．４１７ｃｍ＾－１和ｖ３＝２１５６．９５７２ｃｍ＾－１。     

A位具有混合价态的钙钛矿氧化物Eu1—xKxTiO3（x=0.2,0.32）的高 …

以ＴｉＯ２和Ｅｕ２Ｏ３为原料,利用固相反应法在４．０ＧＰａ和１０９０℃下合成了钙钛矿氧化物Ｅｕ１－ｘＫｘＴｉＯ３（ｘ＝０．２,０．３２）。ＸＲＤ测量表明样品为立方结构。＾１５１Ｅｕ Ｍｏｓｓｂａｕｅｒ谱测试给出同质异能移位分别为～０ｍｍ／ｓ和～－１３ｍｍ／ｓ的两个吸收峰,表明Ｅｕ离子为＋２和＋３混合价。在４８０和６４８０Ｇ的磁场范围内只观察到一个线宽为３１４０Ｇ、ｇ因子为２．００的信号,这是由Ｅｕ     

铁酸盐的水热氧化晶化法制备及其生成条件研究

研究了空气氧化Ｍ＾２＋（Ｍ＝Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ）和Ｆｅ＾２＋的碱性悬浮液制备铁酸盐ＭＦｅ２Ｏ４的条件，考察了原料配比、ｐＨ值、氧化温度、氧化时间对生成ＭＦｅ２Ｏ４的影响。利用ＸＲＤ及ＳＥＭ检测氧化过程中沉淀物的形态和结构表明，在３４３￣３５８Ｋ和Ｒ＝２ＯＨ＾－／（Ｍ＾２＋Ｆｅ＾２＋）＝１．０、Ｍ＾２／Ｆｅ＾２＋＝０．５（摩尔比）下用３００ｍＬ／ｈ的空气氧化Ｍｘ／３Ｆｅ１－ｘ／３（ＯＨ）２悬浮液     

用于等离子体电位测量的电容探针和发射探针

本文给出了发射探针和电容探针测量等离子体电位的实验和方法。发射探针采用直流功率加热，并在较强电子发射条件下运行（Ｉ_（ｅ０）／Ｉ_（ｅ０）＞１）。电容探针表面二次电子发射系数δ≥１。本文对发射探针的电子发射性能、工作电流、电容探针的输入、输出电压关系进行了标定实验。得到了电容探针的校准系数分别为３×１０（－３）、５×１０（－４）。实验给出了ＭＭ－４会切中心等离子体电位Ｖ_（ｐ４）＝－８２±９－１２２±１２Ｖ；ＭＭ－４Ｕ东、西会切中心等离子体电位分别为Ｖ_（Ｐ４ｕ１）＝－５２．９±３．２Ｖ，Ｖ_（Ｐ４ｕ２）＝－６２±３．２Ｖ。     

1.55μmSi1—xGex光波导在Si1—xGex／Si多量子阱探测器集成的优…

对１。５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽，高和腐蚀深度分别为８，３和２．６μｍ，２）对ＳＩ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ，２３个周期的６ｎｍＳｉ０．５ＧＥ０．５＋１８ｎｍＳｉ组成，长度约２ｍｍ。     

Anomalously large oxygen-ordering contribution to the thermal expansion of untwinned YBa2Cu3O6.95 single crystals: A glasslike transition near room temperature

We present high-resolution thermal expansion data from 5-500 K of untwinned YBa2Cu3Ox (Y123) single crystals for x approximately 6.95 and x = 7.0. Large contributions to the thermal expansivities due to O ordering are found for x approximately 6.95, which disappear below a kinetic glasslike transition near 280 K. The kinetics at this glass transition is governed by an energy barrier of 0.98+/-0.07 eV, in very good agreement with other O-ordering studies. Using thermodynamic arguments, we show that O ordering in the Y123 system is particularly sensitive to uniaxial stress along the chain axis and that the lack of well-ordered chains in Nd123 and La123 is most likely a consequence of a chemical-pressure effect.     

Validity conditions for complete and partial local thermodynamicequilibrium of nonhydrogenic level systems and their application tocopper vapor arcs in vacuum

Validity conditions for complete and partial local thermodynamic equilibrium (CLTE and PLTE) of homogeneous, time-dependent, and optically thin plasmas are derived. For Cu I, electron densities of n_e⩾(5×10²²-5×10²³ ) m^-3 are required for the establishment of CLTE. For Cu I and Cu II, n_e⩾(5×10²¹-5×10²¹ -5×10²²) m^-3 is necessary for PLTE (for electron temperatures of 1-2 eV). Application to low-current copper vapor arcs in vacuum shows that CLTE can be expected for r<200-600 μm (r=distance from the cathode spot). A further limitation follows for temperatures of 2 eV or higher if diffusion effects are taken into consideration. Consequently, the use of the LTE formulas in plasma spectroscopy of low-current vacuum arcs is very limited     

Determination of the exciton binding energy in single-walled carbon nanotubes

We report that measurements of the Raman intensity versus applied voltage are sensitive to filling of the density of states and enable us to measure the second band gap in specific semiconducting single-walled carbon nanotubes (SWNTs). Raman scattering preferentially selects sets of SWNTs whose excitonic transitions are resonant with the incident or scattered photon energies. Simultaneous measurement of the electronic gap and exciton resonance allows us to infer binding energies for the exciton of 0.49+/-0.05 and 0.62+/-0.05 eV for tubes of (10, 3) and (7, 5), respectively. Metallic SWNTs exhibit no excitonic feature.     

双钙钛矿卤化物Cs2AgFeX6（X = Cl，Br，I）电子结构和光学性质的第一性原理研究

近年来，银卤化物双钙钛矿作为铅基杂化卤化物钙钛矿的潜在环保替代品得到了广泛的研究。最近实验上合成的新型无铅双钙钛矿单晶材料Cs2AgFeCl6是一种立方结构半导体，吸收光谱可拓宽至800 nm。本论文采用密度泛函理论的第一性原理方法，对Cs2AgFeX6（X = Cl，Br，I）的电子结构和光学性质进行研究，讨论了二者之间的内在关联，并分析了X位元素的改变对材料性质的影响。电荷密度计算结果显示，由Cl到I，Fe-X键逐渐减弱，即原子对电荷的束缚能力减弱。另一方面，三种材料的带隙宽度是逐渐减小的，Cs2AgFeCl6和Cs2AgFeBr6带隙分别为1.40 eV和0.91 eV，而Cs2AgFeI6则呈现金属性质。Cs2AgFeX6双钙钛矿的光谱特征峰随 X 位原子序数的增加明显红移，且在可见至红外光波段均有明显的光吸收：Cs2AgFeCl6在534 nm处的吸收系数达到21.28×104 cm-1，Cs2AgFeBr6在712 nm处的吸收系数为20.54×104 cm-1，而Cs2AgFeI6在1200 nm后的红外波段有一极宽的吸收峰，吸收系数可以达到10×104 cm-1。本论文为Cs2AgFeX6（X = Cl，Br，I）在光电子器件领域的广泛应用提供了理论指导。     

Outstanding spin-orbit-activated interchannel coupling in the Cs and Ba 3d photoemission

Partial 3d5/2 photoionization cross sections of atomic Cs and Ba as well as the asymmetry parameter beta of the angular distribution of the Cs 3d5/2 photoelectrons were investigated near the threshold of the 3d3/2 channel at about 750 eV and 800 eV, respectively. Strong electron correlations, in particular, the spin-orbit activated interchannel coupling between the 3d5/2 and 3d3/2 channels, govern the observed spectra. The most striking effect was found for beta5/2 of Cs with a dramatic increase from beta=1.0 to beta=1.5 in the energy region where the mixing between both channels causes a pronounced minimum in the partial 3d5/2 cross section. This result indicates the decisive influence of the interference term on the asymmetry parameter beta with its dependence on the phase difference between the outgoing p and f waves.     

Testing the stability of fundamental constants with the 199Hg+ single-ion optical clock

Over a two-year duration, we have compared the frequency of the 199Hg+ 5d(10)6s (2)S(1/2)(F=0)<-->5d(9)6s(2) (2)D(5/2)(F=2) electric-quadrupole transition at 282 nm with the frequency of the ground-state hyperfine splitting in neutral 133Cs. These measurements show that any fractional time variation of the ratio nu(Cs)/nu(Hg) between the two frequencies is smaller than +/-7 x 10(-15) yr(-1) (1sigma uncertainty). According to recent atomic structure calculations, this sets an upper limit to a possible fractional time variation of g(Cs)(m(e)/m(p))alpha(6.0) at the same level.     

Low-Temperature Phase Transitions in the Trigonal Modification of Cs 3 Bi 2 Br 9 and Cs 3 Sb 2 I 9

The trigonal (P-3 m1) modification of Cs 3 Bi 2 Br 9 and Cs 3 Sb 2 I 9 have been studied using NQR, X-ray single crystal and powder pattern methods. Moreover, the heat capacity was measured in a wide temperature interval: 4-300 K. In Cs 3 Bi 2 Br 9 a second-order phase transition was found at T C = 96 K. The low-temperature phase is monoclinic (C12/c1), with the unit cell doubled along the [001] direction. Cs 3 Sb 2 I 9 has a sequence of phase transitions at T C = 85 K, T i = 78 K and T L = 72.1 K. The monoclinic structure below 85 K is isomorphic with the low-temperature structure of Cs 3 Bi 2 Br 9 . According to calorimetric data the lock-in transition at 72.1 K is discontinuous.     

Anomalous Cs I 5d-5⨍ lineshape in a non-debye plasma

Laser-induced cesium plasmas were diagnosed by emission spectroscopy, yielding electron densities in the range N_e = 10¹⁶?5 × 10¹⁷ cm^-3 and electron temperatures in the range T_e = 0.2-1 eV. The experimental lineshapes for T_e = 0.5 eV were found to be in good agreement with theory. For the more strongly coupled plasmas at N_e = 1-2 × 10¹⁶ cm^-3 and T_e = 0.2 eV, however, the Cs I 5d-5? lineshape was more asymmetric than predicted.     

Cs_2(B~1Π_u)态与基态Cs原子间的碰撞激发转移

在Cs2密度约为2×1013 cm-3的纯Cs样品池中,脉冲激光激发Cs2(X1 Σg+)至B 1Πu态,利用原子和分子荧光光谱方法研究了Cs2(B 1Πu)+Cs(6S)的碰撞激发转移过程.用736 nm激发Cs2到B 1Πu(v＜10),这时预解离不发生.由B 1Πu→X1 Σg+时间分辨跃迁信号得到B 1Πu态的辐射寿命为(35±7)ns,B1Πu态与Cs原子碰撞转移总截面为(4.0±0.5)×10-14 cm2.用705 nm激发至B 1Πu(v＞30)态,这时发生预解离,在不同的Cs密度下,测量了I(D1),I(D2)和分子带的时间积分荧光的相对强度,得到了预解离率为(4.3±1.7)×105 s-1(对预解离到6P3/2)和(4.7±1.9)×106 s-1(对预解离至6P1/2);碰撞转移截面为(0.45±0.18)×10-14 cm2(对转移到6 P1/2)和(4.3±1.7)×10-14 cm2(对转移到6P3/2).结果表明,如果B 1Πu(v)是束缚的,6P原子由碰撞转移产生;如果B 1Πu(v)是预解离的,则6P原子由预解离和碰撞转移产生.     

Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films

Photoluminescence (PL) characteristics have been studied on undoped and Si-doped CuGaSe₂ single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-to-acceptor transition. The Si doping to CuGaSe₂ produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.