基于耦合场量子受激拉曼散射的太赫兹波辐射

使用两块长度各为65 mm的MgO:LiNbO3和无掺杂LiNbO3晶体,以1064nm的Q开关Nd:YAG激光器作为抽运光源,在12 mJ/pulse的抽运光能量下得到频率范围为0.34～2.90 THz的电磁辐射.分析表明,激光入射使LiNbO3晶体中具有电磁特性的横光学声子可以和入射光子形成耦合场量子.作为一种电磁特性的元激发,LINbO3晶体的耦合场量子的辐射场频率覆盖部分太赫兹频段范围,并可通过耦合场量子受激拉曼散射过程辐射THz波.根据耦合场量子辐射理论,通过分析晶体的耦合场量子色散特性曲线,可以确定该晶体能否辐射THz波及其带宽范围.     

Optical gain by simultaneous photon and phonon confinement in indirect bandgap semiconductor acousto-optical cavities

Optical gain that could ultimately lead to light emission from silicon is a goal that has been pursued for a long time by the scientific community. The reason is that a silicon laser would allow for the development of low-cost, high-volume monolithic photonic integrated circuits created using conventional CMOS technologies. However, the silicon indirect bandgap—requiring the participation of a proper phonon in the process of light emission—is a roadblock that has not been overcome so far. A high-Q optical cavity allowing a very high density of states at the desired frequencies has been proposed as a possible way to get optical gain. However, recent theoretical studies have shown that the free-carrier absorption is much higher than the optical gain at ambient temperature in an indirect bandgap semiconductor, even if a high-Q optical cavity is formed. In this work, we consider a particular case in which the semiconductor material is engineered to form an acousto-optical cavity where the photon and phonon modes involved in the emission process are simultaneously confined. The acousto-optical cavity confinement effect on the light emission properties is characterized by a compound Purcell factor which includes both the optical as well as the acoustic Purcell factor (APF). A theoretical expression for the APF is also introduced. Our theoretical results suggest that creating an acousto-optical cavity the optical gain can overcome the photon loss due to free carriers as a consequence of the localization of phonons even at room temperature, paving the way towards the pursued silicon laser.     

The influence of thin helium films on the phonon spectrum of optically excited silicon

We have studied the phonon spectra resulting from laser pulse excitation of a silicon surface. We used a phonon spectrometer based on pressure tuned boron levels in silicon (Si: B-spectrometer). A new design allowed us to use the spectrometer in vacuum for the first time. We observed phonon frequencies up to 1 THz. The pulse shapes indicated both, quasidiffusion and a long exciton lifetime. On adding helium films to the surface we have found dramatic changes of the spectrum. Full thermalisation was reached already at a thickness of 1.5 monolayers. This indicates a strong anharmonic interaction in the very first monolayers at these high frequencies and, in addition, a strong confinement of the phonons to the surface by quasidiffusion.     

Emission spectrum of intraband luminescence for single parabolic band under excitation of wide-band-gap insulators by ionizing radiation and particles

Emission spectrum and intensity of picosecond intraband luminescence for single parabolic band approximation of electron conduction band in insulating crystals are calculated. It is shown that the spectral intensity of this intraband emission increases approximately as (?ω)^?1/2 with decrease in photon energy, while the spectral density of photons increases as (?ω)^?3/2. The intensity of this emission is inversely proportional to the longitudinal optical phonon frequency. The total emission yield in this approximation is low, less than 10 photons in the spectral window of silicon photomultipliers per MeV of ionizing particle energy.     

Simulation of THz emission from laser interaction with plasmas

One-dimensional particle-in-cell (PIC) program is used to simulate the generation of high power terahertz (THz) emission from the interaction of an ultrashort intense laser pulse with underdense plasma. The spectra of THz radiation are discussed under different laser intensity, pulse width, incident angle and density scale length. High-amplitude electron plasma wave driven by a laser wakefield can produce powerful THz emission through linear mode conversion under certain conditions. With incident laser intensity of 10¹⁸ W/cm², the generated emission is computed to be of the order of several MV/cm field and tens of MW level power. The corresponding energy conversion efficiency is several ten thousandths, which is higher then the efficiency of other THz source and suitable for the studies of THz nonlinear physics.     

Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces

Above-band-gap optical excitation of electron-hole pairs screens the doping-induced surface electric field and generates terahertz(THz) pulses via free-carrier transport. THz emission from a heavily doped silicon surface is much weaker than that of lightly doped samples. A polarity reversal of the THz electric field is observed in heavily doped p-type silicon, indicating that the doping related and carrier induced surface electric fields oppose each other. By comparing the penetration depth of the excitation laser with the thickness of the depletion layer for the doped silicon, it is shown that competition between diffusion and drift current causes the polarity reversal.     

Silicon donor and Stokes terahertz lasers

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50-230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (<30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain ∼1-3 cm⁻¹ above the laser thresholds (>1 kW cm⁻²) and provide 10 ps-1 μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6-5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A₁) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm GW⁻¹ and the optical threshold intensity is ∼100 kW cm⁻².     

KH_2PO_4晶体的太赫兹-紫外光谱

实验测量了室温下磷酸二氢钾KH2PO4(KDP)晶体0.2～1.6THz的时域光谱,以及50～4000cm-1范围内的远红外光谱,200～2000nm的紫外-可见-红外光谱。KDP晶体的禁带宽度是5.91eV。在测量范围内有一个很宽的声子吸收带。从0.2～205.5THz吸收系数在35～80cm-1,声子吸收的低频端小于0.2THz。最高的纵光学模声子的频率νLO大约是205.5THz,由此求出这支声子的H—O键的力常数为13.13N·cm-1。     

Optically pumped GaN/AlGaN quantum well intersubband terahertz laser

We propose an optically pumped nonpolar GaN/AlGaN quantum well (QW) active region design for terahertz (THz) lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature. The fast longitudinal optical (LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state, and more importantly, the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures. The influences of temperature and pump intensity on gain and electron densities are investigated. Based on our simulations, we predict that with a sufficiently high pump intensity, a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.     

Magnetic field effects on THz quantum cascade laser: A comparative analysis of three and four quantum well based active region design

We consider the influence of additional carrier confinement, achieved by application of strong perpendicular magnetic field, on inter Landau levels electron relaxation rates and the optical gain, of two different GaAs quantum cascade laser structures operating in the terahertz spectral range. Breaking of the in-plane energy dispersion and the formation of discrete energy levels is an efficient mechanism for eventual quenching of optical phonon emission and obtaining very long electronic lifetime in the relevant laser state. We employ our detailed model for calculating the electron relaxation rates (due to interface roughness and electron–longitudinal optical phonon scattering), and solve a full set of rate equations to evaluate the carrier distribution over Landau levels. The numerical simulations are performed for three- and four-well (per period) based structures that operate at 3.9 THz and 1.9 THz, respectively, both implemented in GaAs/Al_0.15Ga_0.85As. Numerical results are presented for magnetic field values from 1.5 T up to 20 T, while the band nonparabolicity is accounted for.     

Multi-crystalline silicon as active medium for terahertz intracenter lasers

Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 μm. The maximum operation temperature of the laser made from multi-crystalline silicon is 6 K less than that of monocrystalline lasers and the maximum output power is three times less while its laser threshold is only slightly higher and the emission frequency is the same. These effects are attributed to internal strain and enhanced phonon scattering induced by grain boundaries.     

Generation and detection of very high frequency acoustic phonons in diamond

Generation and detection of very high frequency acoustic phonons in diamond is reported. We generate phonons at a frequency of 28 THz by defect-induced one-phonon absorption of CO₂ laser radiation and observe, after pulsed excitation, phonon decay products in the frequency range from 1 THz to 7 THz. For detection vibronic sideband spectroscopy is used. We find strongly frequency dependent lifetimes for frequencies above 4 THz which we attribute to spontaneous phonon decay.Dedicated to K. Dransfeld on occasion of his 60th birthday     

Experimental characterization of bi-directional terahertz emission from gold-coated nanogratings

The THz radiation emission of Au-coated nanogratings (fused silica substrate, 30?nm Au layer thickness, 500?nm grating constant) upon fs laser irradiation (785?nm, 150?fs, 1?kHz,???1?mJ/pulse) is observed in both directions along the laser beam axis (forward and backward) and for both, illumination of the Au/air or the Au/silica interface. THz radiation along the laser beam propagation is emitted in a narrow solid angle of about 15°?fwhm independent on the laser pulse fluence, the angle of incidence and the nanograting profile. The bar width and groove depth of the nanograting as well as the angle of laser beam incidence strongly affect the THz radiation yield. The energy of single THz light pulses is measured absolutely (2?fJ in the 0.3?C0.38?THz range) using a highly sensitive and fast superconducting transition edge sensor. The bi-directional emission of THz radiation is in agreement with the model assumption of surface plasmon polaritons propagating simultaneously on both Au layer interfaces (Au/air and Au/silica).     

基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置. 关键词： 太赫兹量子阱探测器 太赫兹量子级联激光器 太赫兹通信 Fourier变换红外光谱     

Terahertz radiation source in air based on bifilamentation of femtosecond laser pulses

A new terahertz (THz) source in air based on the bifilamentation of femtosecond laser pulses is reported. This THz radiation is 1 order of magnitude more intense than the transition-Cherenkov THz emission from femtosecond laser filaments reported recently and shows different angular and polarization properties. We attribute it to the emission from a bimodal transmission line created by two plasma filaments.     

The dependence on optical energy of terahertz emission from air plasma induced by two-color femtosecond laser-pulses

The generation of terahertz （THz） emission from air plasma induced by two-color femtosecond laser pulses is studied on the basis of a transient photocurrent model. While the gas is ionized by the two-color femtosecond laser-pulses com- posed of the fundamental and its second harmonic, a non-vanishing directional photoelectron current emerges, radiating a THz electromagnetic pulse. The gas ionization processes at three different laser-pulse energies are simulated, and the corresponding THz waveforms and spectra are plotted. The results demonstrate that, by keeping the laser-pulse width and the relative phase between two pulses invariant when the laser energy is at a moderate value, the emitted THz fields are significantly enhanced with a near-linear dependence on the optical energy.     

Ultrafast blue light emission from SiC nanowires

Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ～ 40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy of peak emission is higher than the energy bandgap of cubic SiC which shows involvement of quantum confinement effect. The ultrafast fluorescence is deconvoluted by Monte-Carlo method. The results show two ultrafast decay processes whose lifetimes are about 26 and 567 ps respectively. The mechanisms of such ultrafast processes are discussed.     

Theoretical investigation of hot electron cooling process in GaAs/AlAs cylindrical quantum wire under the influence of an intense electromagnetic wave

Hot electrons cooling by phonons in GaAs/AlAs cylindrical quantum wire (CQW), under the influence of an intense electromagnetic wave (EMW), is studied theoretically. Analytic expression for the electron cooling power (CP) is derived from the quantum transport equation for phonons, using the Hamiltonian of interacting electron–optical phonon system. Both photon absorption and emission processes are considered. Numerical results show that the CP reaches maximum when the energy difference between electronic subbands equals the energy of an optical phonon plus the photon energy. Under the influence of the EMW, the negative CP is observed showing that electrons gain energy from phonon and photon instead of losing their energy. Also, the CP increases with increasing the EMW amplitude. Our results theoretically clarify the mechanism of the electron cooling process by phonons in the GaAs/AlAs CQW under the EMW, which is of significance for designing and fabricating high-speed nanoelectronic devices based on this material.     

Near infrared to UV dielectric functions of Al doped ZnO films deposited on c-plane sapphire substrate using pulsed laser deposition

Transparent conducting polycrystalline Al-doped ZnO (AZO) films were deposited on sapphire substrates at substrate temperatures ranging from 200 to 300 °C by pulsed laser deposition (PLD). X-ray diffraction measurement shows that the crystalline quality of AZO films was improved with increased substrate temperature. The electrical and optical properties of the AZO films have been systematically studied via various experimental tools. The room-temperature micro-photoluminescence (µ-PL) spectra show a strong ultraviolet (UV) excitonic emission and weak deep-level emission, which indicate low structural defects in the films. A Raman shift of about 11 cm⁻¹ is observed for the first-order longitudinal-optical (LO) phonon peak for AZO films when compared to the LO phonon peak of bulk ZnO. The Raman spectra obtained with UV resonant excitation at room temperature show multi-phonon LO modes up to third order. Optical response due to free electrons of the AZO films was characterized in the photon energy range from 0.6 to 6.5 eV by spectroscopic ellipsometry (SE). The free electron response was expressed by a simple Drude model combined with the Cauchy model are reported.     

Photon induced far-infrared absorption in pure single crystal silicon

Illumination of silicon by direct sunlight was found to cause a significant increase in the far-infrared (FIR) absorption of silicon. The effect was observed during a recent measurement campaign using a 2.5 THz airborne heterodyne spectrometer for atmospheric measurements together with a silicon aircraft window. In this work, the absorption increase was reproduced in the laboratory by illumination of a silicon sample with a halogen lamp. The analysis of the energy flux dependence and the wavenumber dependence support the assumption that the increased absorption in the FIR is due to photon induced transitions of electrons from the valence band to the conduction band. This effect might be of importance to a number of instruments using silicon components.