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We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8μm has been transferred to the near infrared band at 0.8μm by the upconversion process.  相似文献   
2.
A wireless terahertz digital transmission link is demonstrated, in which a quantum-cascade laser and a spectrally-matched quantum-well photodetector serve as the emitter and receiver, respectively. An on-off modulation scheme is used. By directly amplitude modulating the laser emitting at 4.13 THz, a 1.0-Mbps pseudorandom signal is transmitted over a distance of 2.2 m.  相似文献   
3.
We demonstrate the growth of terahertz quantum cascade laser (THz QCL) by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region, From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deduced cascade period thickness is consistent with the result of x-ray diffraction. The test device is lasing at 3.39THz and operating up to lOOK in pulsed mode. At IOK, the maximum output power is greater than 1 mW with a threshold current density of 738 A/cm^2.  相似文献   
4.
We propose an optically pumped nonpolar GaN/AlGaN quantum well(QW) active region design for terahertz(THz) lasing in the wavelength range of 30 μm~ 40 μm and operating at room temperature.The fast longitudinal optical(LO) phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.  相似文献   
5.
本文应用统计物理的方法,讨论了非晶半导体的掺杂效应,特别是在低温下的特性。在荷电的悬挂键模型下,计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。 关键词:  相似文献   
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