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Multi-crystalline silicon as active medium for terahertz intracenter lasers |
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| Authors: | SG Pavlov H-W Hübers H Riemann AV Antonov |
| Institution: | a Institute of Planetary Research, German Aerospace Center, D-12489 Berlin, Germany b Institute for Crystal Growth, D-12489 Berlin, Germany c Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 N. Novgorod, Russia |
| Abstract: | Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 μm. The maximum operation temperature of the laser made from multi-crystalline silicon is 6 K less than that of monocrystalline lasers and the maximum output power is three times less while its laser threshold is only slightly higher and the emission frequency is the same. These effects are attributed to internal strain and enhanced phonon scattering induced by grain boundaries. |
| Keywords: | 42 55 Rz 61 72 Mm |
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