固体氧化物燃料电池产功机理研究

本文基于电化学反应原理及热力学分析方法,研究固体氧化物燃料电池非热力循环产功机理.基于电化学反应原理,建立了SOFC性能分析模型,研究了SOFC电池性能与电化学参数之间的变化关系,从而揭示了SOFC化学能直接转变为电能的机理;分析了热力学参数及电化学参数对SOFC系统性能的影响规律,提出改善SOFC电池性能的途径,并揭示了通过SOFC与先进热力循环系统集成进一步提高动力系统性能的潜力.本文研究成果为开拓研究高效SOFC复合动力系统提供有益的参考.     

SOFC/MGT混合系统耦合特性研究

在SOFC/MGT混合分布式能源系统中,选择不同的系统参数将对SOFC乃至SOFC/MGT混合系统的输出特性、安全运行等造成很大的影响。本文建立了一个典型的SOFC/MGT混合系统计算模型,研究了透平入口温度及燃气轮机压比对混合系统性能的影响。结果表明,透平入口温度和压比增大时,系统的输出功率和效率都会下降,而透平入口...     

水蒸气对IT-SOFC/GT混合动力系统性能的影响

以木片气化气为燃料,分析了IT-SOFC/GT混合动力系统运行性能,研究了水蒸气量的改变对重整器重整特性、燃料电池电化学特性以及混合系统热力学性能的影响。结果表明:在设计工况下,混合动力系统的发电效率高达59.24%,具有较好的系统性能。水蒸气增加,反应温度降低,导致CH_4重整反应平衡常数降低,不利于CH_4向H_2转化;CO水气变换反应平衡常数随温度降低而增加,有利于CO转化,但综合产氢量减少。燃料电池的电极和欧姆极化随水蒸气的增加而增加,能斯特电势减少,电池的输出功率和发电效率减少。混合系统的输出功率和发电效率均随水蒸气量的增加而减少,发电效率从61%降到56.91%。但从重整器、电池堆以及整个系统的安全运行方面考虑,保持较高的水蒸气量非常重要。     

SOFC电化学性能的伸缩式投影Adams多尺度模拟

目前对SOFC的研究主要通过数值分析方法,由于传统宏观模型不能准确描述其内在机理,而细微尺度模拟则面临计算机内存开销巨大,CPU耗时过长的问题。因此本文提出一种用于模拟SOFC电化学性能的伸缩式投影Adams多尺度模拟方法,建立SOFC的系统模型,首次以多尺度的观点从介观尺度出发对SOFC电化学性能进行模拟。研究其各电化学性能参数之间的关系以及入口燃料/空气成分含量、SOFC工作温度、压力对电化学性能的影响,论证了该方法的有效性。     

以焦炉煤气为燃料的SOFC-CCHP系统热力性能分析

为了实现能量的高效利用,探索高效的热力循环已经成为国内外有关学者的研究热点,研究内容已从简单循环发展到复杂、复合及多功能循环系统。本文基于总能系统理论和能量梯级利用原则,通过ASPEN PLUS软件对SOFC-CCHP系统建模,并对该系统热力性能进行基本计算及理论分析,归纳并分析影响该系统的因素。分析得到该系统中SOFC的电效率在50%~60%之间,系统总发电效率在60%~70%之间,并且有一定量的冷量和热量输出,对SOFC-CCHP系统参数匹配及整体合理高效运行提供理论指导。     

Bathocuproine/Ag复合电极对于聚合物光伏器件效率和稳定性的影响

采用Bathocuproine/Ag (BCP/Ag)复合电极代替Ca/Al复合电极, 制备PTB7:PC71BM 作为光敏层的聚合物光伏器件, 并通过改变BCP薄膜厚度来研究BCP/Ag复合电极对于器件光电转换器和稳定性的影响. 研究发现: 在光敏层和金属电极之间插入BCP修饰层后, 器件性能得到了显著的改善, 在BCP厚度为5 nm时, 器件的效率达到了6.82%, 且略高于Ca/Al复合电极的器件效率; 相比于采用Ca/Al复合电极的器件, BCP/Ag复合电极增大了器件的短路电流和外量子效率, 使器件效率得到提高; 同时器件的稳定性得到了显著的改善, BCP/Ag 复合电极器件的衰减速率几乎和未插入BCP的器件衰减速率相同, 相对于Ca/Al复合电极器件大幅提高.     

CPC聚光型太阳能PV/T系统性能实验

设计并制造了一种平面镜单元类复合抛物面聚光器(CPC)和内置平行流道式铝板集热器,将单晶硅太阳电池板粘贴于集热器上构成太阳能电热联用面板(PV/T),并将其置于聚光器支架上构成完整的聚光型PV/T系统。实验测试并研究其聚光特性和光电、光热转换性能。结果表明,PV/T的聚光使用虽然导致电效率下降,但总的电功输出提高了,同时获得了较高的集热效率。该系统太阳能的综合利用效率超过70%。     

复合元胞自动机系统反向迭代加密技术研究

提出了元胞自动机的交叉复合在序列R下随机复合的思想,分析了复合元胞自动机系统的密码学特性,利用元胞自动机反向迭代加密技术,构造了两个基于复合元胞自动机的密码系统.新的复合元胞自动机密码系统很好地解决了单一元胞自动机密码系统中存在的误差单向扩散的问题,并且能够以较小的规则半径获得大密钥空间.计算机仿真结果表明,复合元胞自动机密码系统具有良好的扰乱和扩散性能,能够有效地抵抗蛮力攻击和差分分析. 关键词： 离散动力系统 复合元胞自动机 反向迭代 分组密码     

WO3/Ag复合薄膜的制备及其电致变色性能

通过水热法在导电玻璃上合成WO_3纳米块,利用电沉积技术在WO_3纳米块上负载不同含量(20 s、50 s、80 s)的Ag纳米粒子,成功制备出WO_3/Ag复合薄膜.通过X射线衍射分析、扫描电子显微镜与能谱对WO_3/Ag复合薄膜进行表征,利用电化学测试与光谱测试,得到电致变色可逆性、响应时间、着色效率和光谱透过率等参数,并对其电致变色性能进行分析.结果表明,对比单一WO_3纳米块薄膜的电致变色性能,WO_3/Ag复合薄膜的电致变色性能显著增强.同时研究了不同Ag纳米粒子含量对WO_3/Ag复合薄膜电致变色性能的影响,研究表明沉积50 s的WO_3/Ag复合薄膜具有最优异的电致变色性能.     

TiO_2/MoO_3复合薄膜的制备及其电致变色性能研究

在导电玻璃上水热生长TiO_2纳米线,随后利用电沉积技术涂覆MoO_3薄膜,制备出TiO_2/MoO_3复合薄膜.通过X射线衍射、扫描电子显微镜表征证实了TiO_2/MoO_3复合薄膜的形成.利用电化学测试方法,在LiClO_4/PC溶液中对Li+的注入/抽出进行了研究,采用紫外可见分光光度计对薄膜着色、退色状态的光透过率进行测试.得到了切换时间、循环可逆性、光调制和着色效率等参数.对其电致变色性能进行分析,分析表明,与单一TiO_2和MoO_3薄膜的电致变色性能相比,复合薄膜的电致变色性能有明显增强.同时研究了不同厚度MoO_3薄膜对复合薄膜变色性能的影响,研究表明沉积6个循环MoO_3薄膜的TiO_2/MoO_3复合薄膜具有最佳的电致变色性能.     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Spinor techniques for calculating pp → W±/Z0 + jets

We present techniques which enable one to calculate quickly the amplitudes for many scattering processes in the high-energy limit. As an illustration of the method, these are applied to the diagrams for $\text{p}\text{p}\text{→}\text{V}\text{+ 0, 1}\text{or}\text{2}\text{jets}$, where V = W^± or Z⁰. The form of the results lends itself to immediate numerical evaluation.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.