磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

纳米尺度下气泡核化生长的分子动力学研究

采用分子动力学方法模拟纳米尺度下液体在固体壁面上发生核化沸腾的过程,主要研究壁面浸润性对气泡初始核化过程和气泡生长速率的影响以及固-液界面效应在液体核化沸腾的能量传递过程中所起到的作用.研究结果发现：壁面浸润性越强,气泡在固壁处越容易核化.该结果与经典核化理论中“疏水壁面易于产生气泡”的现象产生了明显的区别.其根本原因是在纳米尺度下,固-液界面热阻效应不能被忽略.一方面,在相同的壁温下,通过增强固-液相互作用,可以显著降低界面热阻,使得热量传递效率提高,导致靠近壁面处的流体温度升高,气泡核化等待时间缩短,有利于液体沸腾核化.另一方面,气泡的生长速率随着壁面浸润性的增强而明显升高.当气泡体积生长到一定程度时,会在壁面处形成气膜,从而导致壁面传热性能恶化.因此,通过壁面的热流密度呈现出先增大后减小的规律.     

载能原子沉积Au/Au(100)外延薄膜生长的计算机模拟

在分子动力学研究的基础上建立了载能原子的沉积动力学物理模型,并根据在局域环境下的表面原子扩散模型,通过运动学Monte Carlo方法研究了载能粒子沉积Au/Au(100)薄膜的初期生长过程,探讨了载能粒子沉积对薄膜生长的影响及其随基体温度的变化.通过计算机模拟发现：载能粒子沉积的Au/Au(100)薄膜生长仍然呈现层状生长-三维岛状生长-准二维层状.在薄膜生长初期,载能粒子的作用是促进表面原子的成核,增加基体表面的缺陷;在薄膜的生长阶段,载能粒子通过抑制三维岛的生长速率起着平滑薄膜表面形貌的作用.载能粒 关键词：     

一氧化碳合成金刚石薄膜的形貌和结构分析

利用微波等离子体化学气相沉积(MPCVD)技术，采用偏压增加成核(BEN)、两步生长的方法在一氧化碳(CO)和氢气(H₂)的环境下制备了金刚石薄膜. 利用扫描电子显微镜(SEM)、Raman光谱仪和透射电子显微镜(TEM)对金刚石薄膜的形貌和结构进行了分析. 研究发现金刚石晶粒在第一步成核及生长的过程中产生了层错和孪晶，而在第二步的生长过程中产生的层错和孪晶很少，最终形成的金刚石晶粒外表面比较光滑，包含有近五次对称或者平行的片状的孪晶，并可以观察到少量的位错. 而在样品的边缘由于等离子体的不均匀产生了比样品中心成核密度低的区域. 在这个区域中，发现了一个新的非金刚石的碳结构.     

一个新的核态沸腾汽泡动力学模型

本文在经典汽泡动力学理论基础上，提出了描述汽泡生长过程的综合界面模型．本模型的核心在于汽泡内部的热力学过程的详细分析及汽液界面的传热、传质过程的详细描述．并对汽泡生长过程进行了模拟计算，给出了动力学控制阶段的时间范围．本模型对汽泡生长、汽膜发展的理论分析及数值模拟提供了良好的基础．     

Study of diamond film nucleation by ultrasonic seeding in different solutions

In this study we have investigated diamond nucleation on Si substrates by ultrasonic seeding with different liquid solutions of Ultradispersed Detonation Diamond (UDD) powder in a mixture of metal nano- or microparticles (Ni, Co, Y). The influence of different solutions on nucleation efficiency was investigated. For highlighting nucleation centers and better evaluation of the nucleation process the nucleated samples were moved into a Microwave Plasma Enhanced Chemical Vapor Deposition (MW CVD) reactor and a ”short-time” (10 min), then followed by a ”long-time” (+1 hour), diamond deposition was performed. The morphology of samples was characterized by Scanning Electron Microscopy (SEM) and the chemical composition of grown diamond layer was investigated by Raman Spectroscopy. From the measurements we found out that microsized metal particles positively influenced nucleation and the uniformity of the deposited diamond thin film. The lowest surface roughness was achieved in the case of nanodiamond powder mixed with Co and Y metal powder. The influence of Ni, Co and Y to the nucleation and early growth stage are discussed.     

Dynamics of wetting layer formation

We study the formation and growth of wetting layers in the binary liquid mixture cyclohexane-methanol. By progressively deuterating the methanol we can tune the equilibrium wetting layer thickness. Hysteresis of the transition is observed for large thicknesses and is absent for thinner ones. This can be understood by calculating the activation energy for wetting layer nucleation as a function of the film thickness. We also show that the late-stage growth of the wetting layer after the nucleation process follows a power law in time, in agreement with a diffusion-limited growth mechanism proposed theoretically.     

衬底表面覆盖对薄膜成核和生长的影响

在薄膜生长的成核阶段,稳定聚集体将逐渐覆盖衬底表面．同时,薄膜的生长将发生在被覆盖的衬底部分,而成核则发生在未被覆盖的部分．本文研究了衬底表面被覆盖的程度对薄膜成核和生长的影响,对广泛应用的薄膜理论,给出一些修正公式．结果表明,成核速率正比于衬底表面未被覆盖面积的平方．而薄膜理论认为成核速率是时间常量,似显得粗糙． 关键词：     

Formation of ZnO nanowires during short durations of potentiostatic and galvanostatic anodization

Different behaviors during the formation of ZnO nanowires from a Zn foil by either potentiostatic or galvanostatic anodization are described herein. During the initial stage, 4.5 fold fewer nucleation sites are created in potentiostatic mode than galvanostatic mode. However, the nucleation sites continuously increase as anodization proceeds in the potentiostatic mode, whereas the number of nucleation sites is determined at the beginning of anodization in galvanostatic mode. Overall, the total number of nanowires produced is almost identical. The growth rate of nanowires is 0.04 μm/s for both modes. Based on the findings during anodization of a Zn foil, a sputtered film of Zn is anodized. In galvanostatic mode, the growth of well-defined nanowires is similar to that observed during anodization of the foil, whereas sparse growth of nanowire bundles is observed in potentiostatic mode. The formation of unevenly grown nanowires is ascribed to the surplus growth species, which are intensively deposited on a few nucleation sites.     

CLUSTER NUCLEATION LIMITED BY GROWTH PATTERN COVERAGE IN THIN FILM PREPARATION FROM VAPOR

In the early stage of thin film preparation from vapor, growth patterns consisting of stable clusters will gradually cover almost the entire substrate surface. During this process, the density of single atoms is zero on growth patterns and the nucleation of clusters will proceed in the substrate parts uncovered by these patterns. The influence of growth pattern coverage on the nucleation of thin films has not been considered wholly in the classical theory of thin films. We will systematically study the influence of growth pattern coverage and give some correction formulas for the widely used classical theory of thin films. It was found that the classical nucleation rate is proportional to the square of the uncovered area. The corrected formulas are of particular importance in the dominant coverage case.     

微重力核态沸腾近壁面汽泡生长模型

建立二维近壁面汽泡生长模型,研究过冷度,壁面过热度,壁面物性,接触角,核化点尺寸等因素对汽泡生长的影响.本文建立的汽泡生长模型在低壁面过热度条件下趋近于微液层蒸发控制的汽泡生长模型,在高壁面过热度条件下趋近于无限过热液体中传热控制球形汽泡生长模型.     

枝晶生长和气泡形成的数值模拟

本文建立了二维的格子玻尔兹曼方法-元胞自动机(lattice Boltzmann method-cellular automaton, LBM-CA)耦合模型, 对凝固过程中枝晶生长和气泡形成进行模拟研究. 本模型采用CA方法模拟枝晶的生长, 根据界面溶质平衡法计算枝晶生长的驱动力. 采用基于Shan-Chen多相流的LBM模拟气泡在液相中的生长和运动. 在LBM-CA的耦合模型中包含了固-液-气三相之间的相互作用. 应用Laplace定理和模拟气-液-固三相之间的润湿现象对模型进行了验证. 应用所建立的LBM-CA耦合模型模拟研究了气-液相互作用系数对单气泡生长的影响. 发现单气泡的生长速度和平衡半径随气-液相互作用系数的增大而增大. 定向凝固过程中枝晶和气泡生长的模拟结果再现了枝晶的择优生长、 气泡的优先形核位置、气泡的长大、合并、在枝晶间受挤变形以及在液相通道中的运动等物理现象, 与实验结果符合良好. 此外, 初始气体含量越高, 凝固结束时气泡的体积分数也相对较高. 本模型的模拟结果可以揭示在凝固过程中气泡形核、 生长和运动演化以及与枝晶生长相互作用的物理机理.     

Glancing-angle ion enhanced surface diffusion on gaAs(001) during molecular beam epitaxy

We describe the effects of glancing incidence 3-4 keV Ar ion bombardment on homoepitaxial growth on vicinal GaAs(001). The average adatom lifetime on surface terraces, measured during growth using specular ion scattering, decreased monotonically with increasing ion current density. The results indicated that surface diffusivity was increased by the ions. The ion beam also suppressed growth oscillations and decreased the film surface roughness. This indicates a change from two-dimensional island nucleation to step-flow growth due to increased adatom surface diffusivity. A simple model, involving direct momentum transfer from ions to adatoms, is shown to be consistent with the measured enhanced diffusion.     

Kinetic growth mechanisms of sputter-deposited Au films on mica: from nanoclusters to nanostructured microclusters

Au nanostructured film was deposited on mica by room temperature RF sputtering. The growth mechanism of the film was studied analyzing the evolution of the film morphology as a function of its thickness by the atomic force microscopy. In the early stages of a growth the film evolution proceeds by the nucleation and growth of nanoclusters. After a critical thickness the growth of microclusters formed by the joining of nanoclusters in preferential nucleation sites, onto a quasicontinuous film, is observed. We quantified the evolution of the mean nanoclusters height and surface density and of the film roughness. This data were analyzed by the dynamic scaling theory of growing interfaces obtaining the scaling and roughness exponents z and β whose values suggest a conservative growth process. We also quantified the growth of the microclusters showing that it is consistent with a coalescence/impingement dynamic. About the formation of the microclusters, furthermore, we speculate that their origin is strongly correlated to the features of the sputtering technique in connection with the deposition on a high-diffusivity substrate.     

Direct visualisation of homogeneous and heterogeneous crystallisation in an ensemble of confined domains of poly(ethylene oxide)

We present a study of homogeneous and heterogeneous nucleation in polymer crystallisation. In bulk samples the crystallization is typically dominated by nucleation from defects (heterogeneous nucleation), and consequently studies must rely on sample preparation to minimize this effect. We present a study of nucleation within discrete droplets of poly(ethylene oxide) that are formed by the dewetting of a thin film on an unfavourable substrate. The samples provide an ensemble of impurity-free droplets, with length scales that can easily be measured. We show that the data for heterogeneous and homogeneous nucleation is qualitatively different, and that the data mirrors the fundamental differences in the underlying mechanisms for the two nucleation processes. The experiments presented here provide a simple method that can be used to study heterogeneous and homogeneous nucleation in great detail.Received: 1 January 2003, Published online: 30 October 2003PACS: 61.41. + e Polymers, elastomers, and plastics - 68.55.-a Thin film structure and morphology - 81.10.-h Methods of crystal growth; physics of crystal growth     

Fabrication of two-dimensional colloidal arrays

We report the effective fabrication of two-dimensional (2D) arrays of submicron colloidal particles. These colloidal arrays are produced in thin layers of monodisperse colloid suspensions on flat surfaces of solids such as clean glass or cleaved mica. The process of colloid assembling includes two steps, nucleation and growth, similar to those found in crystallization in solution but each of the steps in detail progresses with different mechanisms. The nucleation process is initiated by a special kind of capillary force acting parallel to the surface. The growth is guided by a laminar flow of water to the crystals, which is driven by water evaporation from 2D arrays. What is distinguishable in the 2D assembling is its active nature governed by the forces and flows, making a contrast to the diffusive mechanism in ordinary crystallization. With this two-step mechanism, a domain of hexagonally packed colloidal array can grow with time. A large and uniform film of particle monolayer is, thus, formed in a short period, from several seconds up to several minutes depending on the conditions controlled.     

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

Epitaxial growth of Ce_0.8Gd_0.2O₂(CGO) films on (001) TiO₂-terminated SrTiO₃ substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature.     

Surface energy as a barrier to creasing of elastomer films: an elastic analogy to classical nucleation

In a soft elastic film compressed on a stiff substrate, creases nucleate at preexisting defects and grow across the surface of the film like channels. Both nucleation and growth are resisted by the surface energy, which we demonstrate by studying creases for elastomers immersed in several environments-air, water, and an aqueous surfactant solution. Measurement of the position where crease channeling is arrested on a gradient thickness film provides a uniquely characterized strain that quantitatively reveals the influence of surface energy, unlike the strain for nucleation, which is highly variable due to the sensitivity to defects. We find that these experimental data agree well with the prediction of a scaling analysis.     

Conditions for growth of columnar and filamentary crystals

The computer model of the initial stage of condensation processes is developed. The stochastic processes of adsorption, surface diffusion, and desorption occur on the 70×70 lattice of adsorption vacancies. The model was tested by an example close to water vapor sorption on a conventional crystal surface. Computed results demonstrate the processes of nucleation, growth of crystals, and developed condensation. Computations were carried out for various adsorption energies. Results showed that with decreasing energy of adsorption the character and rate of nucleation and subsequent condensation vary. With decreasing energy of adsorption the probability of nucleation of islets on substrate reduces, the filling of the next atomic layers on islets occurs earlier than the filling of the substrate, the growth rate of islets in height increases as compared to condensation of a continuous film, and the growth rate of area of islets decreases. There is a typical energy of adsorption at which the growth rate of islets in height reaches its maximum. At a further drop of adsorption energy, there is a growth of islets only in height, the growth rate, however, reduces. The phenomena revealed in computations illustrate the mechanism of origin of columnar and filamentary crystals.