Q-Switched Large-Mode-Area Yb-Doped Fibre Laser Using GaAs as Saturable Absorber

A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30μm and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161W when the laser is pumped with a 25W diode laser operating at 976nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.     

High conversion efficiency,high power density Q-switched fiber laser

An acoustic-optic Q-switched all-fiber laser With a high-repetition-rate, a short pulse width, a wide spectrum, and a high conversion efficiency is experimentally demonstrated. In the laser configuration, a （1＋1）x 1 side-pumping coupler is introduced to perform backward pumping, and a 10/130%tm Yb fiber is adopted. The acoustic-optic component operates in the first direction, achieving a Q-switched pulse with a repetition rate adjustable in the range of 20 kHz-80 kHz. Under a repetition rate of 20 kHz and a pump power of 6.76 W, the fiber laser obtains a highly efficient and stable pulse output, with an average power of 4.3 W, a pulse width of 56 ns, a peak power of 3.83 kW, and a power density of 1.39x 101~ W/cm2. Particularly, the optic-optic conversion efficiency of the laser reaches as high as 64%. Another feature of the pulsed laser is that the high reflection mirror reflects the pump light as well, which brings the secondary absorption of the pump power into the gain fiber.     

An efficient intracavity-pumped KTP optical parametric oscillator at 1572 nm

We demonstrate an efficient and eye-safe wavelength intracavity optical parametric oscillator (OPO), based on a KTP crystal inside a Q-switched Nd:YVO4 laser end pumped by a fiber-coupled diode laser. In the acousto-optic Q-switched operation with the pulse repetition rate of 10 kHz, a 1572-nm eye-safe laser with the average power of 237 mW at the incident pump power of 5.64 W is obtained. Under the pulse repetition rate of 5 kHz, the signal light with pulse width of 2 ns and peak power of 18.5 kW is achieved. The conversion efficiency of the average power is 4.2% from pump diode to OPO signal output and the signal pulse duration is about 13 times shorter than that of the depleted pump light.     

A Graphene-Based Passively Q-Switched Ho：YAG Laser

A 2.09-μm in-band pumped passively Q-switched Ho： YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11μs is obtained at an average output power of lOOmW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M^2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho： YAG crystal is a potential gain medium in the 2 μm range for the graphene application.     

Q-switched pulse generation from an all-fiber distributed Bragg reflector laser using graphene as saturable absorber

A Q-switched distributed Bragg reflector fiber laser using a graphene passive saturable absorber is proposed in a cavity consisting of a fiber Bragg grating and Faraday rotator mirror as end mirrors, together with a highly doped erbium-doped fiber as a gain source. The laser has a Q-switched threshold of about 28 mW and a tunable repetition rate of 10.4-18.0 kHz with varying pump power. The shortest pulse width obtained from the system is 3.7 its, with a maximum pulse energy and peak power of 22.2 nJ and 3.4 mW, respectively.     

Laser-diode-pumped zigzag oscillator power slab Nd：YAG master amplifier

A Q-switched distributed Bragg reflector fiber laser using a graphene passive saturable absorber is proposed in a cavity consisting of a fiber Bragg grating and Faraday rotator mirror as end mirrors, together with a highly doped erbium-doped fiber as a gain source. The laser has a Q-switched threshold of about 28 mW and a tunable repetition rate of 10.4-18.0 kHz with varying pump power. The shortest pulse width obtained from the system is 3.7 μs, with a maximum pulse energy and peak power of 22.2 nJ and 3.4 mW, respectively.     

Electro-optically Q-switched RF excited partial Z-folded CO_2 waveguide laser

An electro-optically Q-switched partial Z-folded RF CO2 waveguide laser with an intracavity CdTe modulator has been designed and characterized. The partial Z-fold channel is 3 x 460 mm in length. In this paper we study the laser output power as a function of gas pressure for partial Z-fold channel without Q-switched crystal inside the cavity. The maximum laser output power is about 21 W. For Q-switch operation, the peak power is 730 W and the pulse width is 150 ns.     

Kilohertz Electro-Optic Q-Switched Nd：YAG Ceramic Laser

We investigate the lasing characteristics of a laser-diode-array side-pumped electro-optic Q-switched Nd： Y3Al5O12 ceramic laser operating at 1000 Hz pulse repetition rate. Using a YAG polycrystalline rod with Nd^3＋ concentration of 1 at. % as the gain medium, pumping with 808 nm laser-diode-arrays, the Q-switched laser output at 1064 nm wavelength with 23mJ pulse energy and less than 12ns FWHM pulse width are obtained at a pumping power of about 400 W, the slope efficiency is around 15%, the output beam divergence angle is about 1.2mrad.     

Electro-optically Q-switched RF excited partial Z-folded CO2 waveguide laser

An electro-optically Q-switched partial Z-folded RF CO2 waveguide laser with an intracavity CdTe modu-lator has been designed and characterized.The partial Z-fold channel is 3 x 460 mm in length.In this paperwe study the laser output power as a function of gas pressure for partial Z-fold channel without Q-switchedcrystal inside the cavity.The maximum laser output power is about 21 W.For Q-switch operation,thepeak power is 730 W and the pulse width is 150 ns.     

Diode-Pumped Passive Q-Switched 946-nm Nd：YAG Laser with 2.1-W Average Output Power

We demonstrate a diode-pumped passive Q-switched 946nm Nd: YAG laser with a diffusion-bonded composite laser rod and a co-doped Nd, Cr:YAG as saturable absorber. The average output power of 2.1 W is generated at an incident pump power of 14.3 W. The peak power of the Q-switched pulse is 643 W with 80kHz repetition rate and 40.8 ns pulse width. The slope efficiency and optical conversion efficiency are 17.6% and 14.7%, respectively.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.     

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural properties and excitonic transitions in In_xGa_1−xAs/In_0.52Al_0.48As multiple quantum wells (MQWs) for x = 0.54, 0.57 and 0.60. TEM images showed that high-quality 11-period In_xGa_1−xAs/In_0.52Al_0.48As MQWs had high-quality heterointerfaces. The results for the PC spectra at 300 K showed that the peaks corresponding to the excitonic transitions from the ground state electronic sub-band to the ground state heavy-hole band (E₁-HH₁) and the ground state electronic sub-band to the ground state light-hole band (E₁-LH₁) became closer to each other with decreasing In mole fraction and that E₁-HH₁ and E₁-LH₁ excitonic peaks shifted to longer wavelength with increasing applied electric field. The calculated values of the E₁-HH₁ interband transition energies were in qualitative agreement with those obtained form the PC measurements with and without applied electric field. These results can be helpful in understanding potential applications of In_xGa_1−xAs/In_yAl_1−yAs MQWs dependent on In mole fraction and applied electric field in long-wavelength optoelectronic devices.     

Rotational Brownian Motion on Sphere Surface and Rotational Relaxation

The spatial components of the autocorrelation function of noninteracting dipoles are analytically obtained in terms of rotational Brownian motion on the surface of a unit sphere using multi-level jumping formalism based on Debye＇s rotational relaxation model, and the rotational relaxation functions are evaluated.     

A Complete Foliation of Schwarzschild Spacetime by Free Falling Hypersurfaces

Free falling hypersurfaces in the Schwarzschild geometry have been studied to provide a complete foliation of spacetime. The hypersurfaces do not cross into the maximally extended spacetime and are well behaved everywhere except at the singularity r =0 the mean extrinsic curvature becomes infinity.     

Self Mixing Fringes of Vertical-Cavity Surface-Emitting Lasers under Dual Reflector Feedback

The self-mixing fringes which shift due to every one-twentieth wavelength displacement of the target are observed. Taking advantage of the dual reflectors in the external cavity of lasers, the resolution of the sensors has been improved by 10 times. The role of the each reflector has been discussed in detail.     

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

The electrical and the optical properties of InAs/GaAs quantum dots (QDs) grown by using atomic layer epitaxy (ALE) technique were investigated by using capacitance-voltage (C-V) and photoluminescence (PL) measurements. C-V curves showed that the plateaus related to the zero-dimensional carrier confinement effect existed and that the number of electrons occupying the InAs QD was approximately 7. The full width at half maxima of the interband transitions from the ground electronic subband to the ground heavy-hole subband and from the first excited electronic state to the first excited state heavy-hole subband were not significantly affected by the temperature variation, indicative of strong confinement of the carriers occupying the InAs QDs. These results can help improve understanding for applications of InAs/GaAs QDs grown by using ALE in high-efficiency electronic and optoelectronic devices.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Instability of Solution of Phase Retrieval in Direct Diffraction Phase-Contrast Imaging with Partially Coherent X-Ray Source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.