Influence on the laser induced backside dry etching of thickness and material of the absorber, laser spot size and multipulse irradiation

Laser induced backside dry etching method (LIBDE) was developed - analogously to the well-known laser induced backside wet etching (LIBWE) technique - for the micromachining of transparent materials. In this procedure, the absorbing liquid applied during LIBWE was replaced with solid metal layers. Fused silica plates were used as transparent targets. These were coated with 15-120 nm thick layers of different metals (silver, aluminium and copper). The absorbing films were irradiated by a nanosecond KrF excimer laser beam through the quartz plate. The applied fluence was varied in the 150-2000 mJ/cm² range, while the irradiated area was between 0.35 and 3.6 mm². At fluences above the threshold values, it was found that the metal layers were removed from the irradiated spots and the fused silica was etched at the same time. In our experiments, we investigated the dependence of the main parameters (etch rate and threshold) of LIBDE on the absorption of the different metal layers (silver, copper, aluminium), on the size of the irradiated area, on the film thickness and on the number of processing laser pulses.     

Tailoring the chemical behavior of aluminum for selective etching by laser interference metallurgy

The chemical behavior of aluminum modified by laser interference metallurgy (LIMET) is investigated. LIMET allows the single-step creation of periodic patterns with a well defined long-range order on material surfaces. This technique can also induce local and periodical oxidation on aluminum surfaces, which follows the ordered array imprinted by laser interference. The thin oxide layer built up during laser structuring enhances the chemical stability of the irradiated zones. Ordered local oxidation permits the selective etching of an exposed aluminum surface. The etch pits are generated preferentially at the interference minima positions. In comparison to conventional methods, this process significantly improves the homogeneity of the initiation sites of pits. Furthermore, LIMET not only influences the first stages of pits initiation, but also the final etch morphology formed during the total electrochemical etching of the surfaces.     

High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation

High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm². A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed.     

Growth and crystalline structure of Co layers on Cu(0 0 1)

The crystalline structure of Co layers deposited on the Cu(0 0 1) surface was investigated with the use of the directional elastic peak electron spectroscopy (DEPES). For clean Cu(0 0 1) the experimental DEPES profiles obtained for different energies of the primary electron beam exhibit intensity maxima corresponding to the close packed rows of atoms. The Auger peak kinetics recorded during continuous Co deposition suggest the layer-by-layer growth mode. The DEPES profiles recorded for 10 monolayers (ML) of Co on Cu(0 0 1) reflect a short-range order in the adsorbate. Intensity maxima observed in the DEPES profiles for Co along [1 0 0], [0 1 0], and [1 1 0] azimuths of Cu(0 0 1) are characteristic of the face centered cubic (fcc) Co(0 0 1) layers. Low-intensity reflections and considerable background intensities were found in the low energy electron diffraction (LEED) patterns recorded from 10 ML of Co, which indicates a weak long-range order in the adsorbate. The adsorption of about 20 ML of Co results in considerable background contribution to DEPES. No reflections but a large background were observed with the use of LEED for this layer. The heating of the Co/Cu(0 0 1) system at T = 770 K leads to an increase of the short- and long-range order in the overlayer, observed in the DEPES profiles and LEED patterns, respectively. The theoretical DEPES profiles were obtained with the use of a multiple scattering approximation. A very good agreement between experimental and theoretical scans was found for the clean and covered copper substrate. The latter proves the epitaxial growth of Co layers on Cu(0 0 1).     

Short- and long-range ion-beam mixing in Cu:Al

Ion-beam mixing by 500-keV xenon ions has been studied in targets consisting of 2000-Å films of aluminium on a polycrystalline aluminium substrate, onto which has been evaporated a 500-Å overlayer of copper. Both long- and short-range-mixing processes have been identified, by RBS analysis of the irradiated targets, as a deep copper tail in the aluminium and interfacial broadening, respectively. The long-range component varies linearly with xenon fluence, is temperature-independent in the interval 40–500 K, and is not influenced by the presence of an interfacial oxide layer between the copper and aluminium layers. The number of long-range-mixed atoms is in agreement with theoretical estimates of the recoil mixing. The short-range mixing, which is the dominating process, has a squareroot dependence on xenon fluence and is independent of temperature between 40 and 300 K, increasing rapidly at higher temperatures. The broadening attributed to the short-range mixing is explained by interstitial diffusion within the cascade. For small xenon fluences, interfacial oxide layers inhibited both short-range mixing and thermal diffusion. Higher xenon fiuences subdued the inhibition.     

First-principles calculations on Al/AlB2 interfaces

The AlB₂ (1 1 1) surfaces and Al (1 1 1)/AlB₂ (0 0 0 1) interface were studied by first-principles calculations to clarify the heterogeneous nucleation potential of α-Al grains on AlB₂ particles in purity aluminium and hypoeutectic Al-Si alloys. It is demonstrated that the AlB₂ (0 0 0 1) surface models with more than nine atomic layers exhibit bulk-like interior, wherein the interlayer relaxations localized within the top three layers are well converged. The outmost layer of AlB₂ free surface having a preference of metal atom termination is evidenced by surface energy calculations. With Al atoms continuing the natural stacking sequence of bulk AlB₂, Al-Al metallic bonds are formed across interface during the combination of Al atoms with Al-terminated AlB₂ surface. The calculated interfacial energy of the Al/AlB₂ interface is much larger than that between the α-Al and aluminium melts, elucidating the poor nucleation potency of α-Al grains on AlB₂ particles from thermodynamic considerations.     

Atomic force microscopical and surface plasmon resonance spectroscopical investigation of sub-micrometer metal gratings generated by UV laser-based two-beam interference in Au-Ag bimetallic layers

Metal films containing silver and gold layers having different thicknesses were evaporated on glass substrates. Two-beam interference technique was applied to irradiate the surfaces by the fourth harmonic of a pulsed mode Nd:YAG laser. The atomic force microscopical study showed that surface relief grating having a period of 900 nm corresponding to the interference pattern was developed on the metallic films. The modulation amplitude of the laser-induced gratings was increasable by enhancing the number of laser pulses at constant fluence, and a groove depth commensurable with the film thicknesses was generated at the average fluence of 39.5 mJ/cm² on bimetallic layers. The surface structure was more regular, and the modulation amplitude was larger in case of bimetallic films containing thicker gold layers. The threshold fluences of the phase transitions were determined by numerical temperature model calculations for different metal layer compositions, and a good agreement was found between the calculated and experimentally observed threshold values. The division of the metal stripes into droplets and the development of holes were explained by the melting of the entire metal layers and by the vaporization of silver at higher fluences. The angle-dependent surface plasmon resonance spectroscopy realized in Kretschmann arrangement proved that the laser-induced grating formation was accompanied by the change in the optical thickness and by the modification of the structure of the bimetallic films. Broad side wings appeared on the resonance curves caused by grating-coupling in case of appropriate rotation angle and sufficiently large modulation depth of the grating's grooves, according to our calculations. The coupling on deep gratings developed on bimetallic films containing the thinnest gold layer and on monometallic silver films resulted in separated secondary resonance minimum development. The periodic adherence of native streptavidin on the metallic gratings was detected by tapping mode AFM, and based on the shift of the secondary resonance peak.     

Oxidation kinetics of thin copper films and wetting behaviour of copper and Organic Solderability Preservatives (OSP) with lead-free solder

The oxide formation on thin copper films deposited on Si wafer was studied by XPS, SEM and Sequential Electrochemical Reduction Analysis SERA. The surfaces were oxidized in air with a reflow oven as used in electronic assembly at temperatures of 100 °C, 155 °C, 200 °C, 230 °C and 260 °C. The SERA analyses detected only the formation of Cu₂O but the XPS analysis done for the calibration of the SERA equipment proved also the presence of a CuO layer smaller than 2 nm above the Cu₂O oxide. The oxide growth follows a power-law dependence on time within this temperature range and an activation energy of 33.1 kJ/mol was obtained. The wettability of these surfaces was also determined by measuring the contact angle between solder and copper substrate after the soldering process. A correlation between oxide thickness and wetting angle was established. It was found that the wetting is acceptable only when the oxide thickness is smaller than 16 nm. An activation energy of 27 kJ/mol was acquired for the spreading of lead free solder on oxidized copper surfaces.From wetting tests on copper surfaces protected by Organic Solderability Preservatives (OSP), it was possible to calculate the activation energy for the thermal decomposition of these protective layers.     

Ab-initio pseudopotential study of electronic structure and chemisorption of oxygen on aluminium surface

Chemisorption of oxygen atom on aluminium (1 1 1), (1 1 0) and (1 0 0) surfaces is studied using ab-initio plane wave pseudopotential method based on density functional theory (DFT). Oxygen atom chemisorbed on three different high symmetry sites; top, short-bridge and hollow sites on the aluminium surfaces are examined. It has been found that the O-adatom adsorbed at the hollow site on aluminium (1 1 1), (1 1 0) and (1 0 0) plane yield energetically most stable structure. Calculation of chemisorption energies of O-adatom on aluminium surfaces shows that oxygen is most strongly bound to aluminium atoms on Al(1 1 1) plane and the calculated value of the chemisorption energy of O-adatom at the hollow site on Al(1 1 1) surface is 4.8 eV. In this work, the chemisorption energies calculated for O-adatom on Al(1 1 0) and Al(1 0 0) surfaces are reported for the first time. The electronic structures and the electronic charge density distributions of the oxygen chemisorbed aluminium surfaces are also investigated. Calculations show that for aluminium, p orbitals also contribute significantly along with the s orbitals during the bond formation with oxygen atom. Therefore, the possibilities of hybridizations lead to the strong bonding configurations.     

Growth of Pt thin films on WSe2

The morphology and structure of Pt deposited on a WSe₂(0 0 0 1) van der Waals surface have been investigated by reflection high energy electron diffraction and scanning tunneling microscopy. At room temperature, the initial growth is characterized by the formation of three-dimensional fcc Pt islands with (1 1 1) orientation. In contrast, at higher temperatures of about 450 °C the formation of a novel chemically ordered Pt-Se alloy is observed. Based on the diffraction patterns, a tetragonal DO₂₂-type structure of a Pt₃Se compound is suggested. With increasing Pt thickness, this chemically ordered alloy disappears and an additional superstructure occurs, which is accompanied by the coalescence of the islands. The observed superstructure is attributed to a strong Se diffusion towards the growth surface, forming most likely a PtSe₂ alloy with the CdI₂-type layered structure on the top surface. Due to the lateral lattice mismatch between the Pt(1 1 1) layers and the PtSe₂(1 1 1) top layer, a Moiré pattern with a period of 1.1 nm is created, which might be used as a long-range atomic pattern for further nanostructure growth.     

Formation of periodic structures by the space-selective precipitation of Ge nanoparticles in channel waveguides

Thermally stabilized channel waveguides with Bragg gratings were fabricated by the space-selective precipitation technique of crystalline Ge nanoparticles using KrF excimer laser irradiation. The periodic structures consisting of Ge nanoparticles were formed in Ge-B-SiO₂ thin glass films after exposure to an interference pattern of the laser followed by annealing at 600 °C. The channel waveguides with the periodic structures were fabricated by the cladding of the patterned Cr layers on the films. The diffraction peak for the TE-like mode of 11.8 dB depth was observed clearly at a wavelength of 1526.4 nm, indicating that the periodic structure also served as the optical band-pass filter in optical communication wavelength. The spectral shape, diffraction efficiency, and diffraction wavelength remained unchanged even after annealing at 400 °C. Furthermore, a low temperature dependence of the diffraction wavelength - as low as 8.1 pm/°C - was achieved. The diffraction efficiency was further enhanced after subsequent annealing at 600 °C. The space-selective precipitation technique is expected to be useful for the fabrication of highly reliable optical filters or durable sensing devices operating at high temperature.     

Laser-generated surface acoustic waves in a ring-shaped waveguide resonator

Surface acoustic wave (SAW) waveguide resonator is formed by a ring-shaped strip of copper 10 μm wide and ∼130 μm in diameter embedded into a 0.8 μm thick layer of silica on a silicon wafer. SAWs are excited at one side of the copper ring by a short laser pulse focused into a spatially periodic pattern and detected via diffraction of the probe laser beam overlapped with the excitation spot. SAW wavepackets with central frequency 460 MHz travel around the ring and are detected each time they make a full circle and pass trough the probe spot. Potential applications of ring resonators for SAWs are discussed.     

SEM/TEM characterization of periodical novel amorphous/nano-crystalline micro-composites obtained by laser interference structuring: The system HAlO-Al·Al2O3

Layers of the metastable, amorphous HAlO are synthesized by chemical vapor deposition from the molecular compound tert-butoxyalane ([^tBu-O-AlH₂]₂). At temperatures above 500 °C, these layers transform to biphasic Al·Al₂O₃ due to the elimination of di-hydrogen. The interaction of HAlO films with short laser pulses causes partial transformation of amorphous HAlO into nano-crystalline Al·Al₂O₃. Using an interference pattern of two coherent high-power Nd:YAG laser beams produces local and periodic heating, inducing crystallization at equally distant lines in the HAlO layer. Depending on the laser fluence, different morphologies and different amounts of crystalline phases are obtained. In this study, the surface morphology and the distribution of crystalline phases of the structured samples are analyzed using SEM, FIB and TEM. The two-dimensional structures consist of periodic variations of morphology, chemical composition, and phase identity with a well-defined long-range order. When bio-functionalized, the structured samples may be used as carriers for structurally controlled cell-cultivation.     

Study of the multilayer metallic films topography modified by laser interference irradiation

The thin bimetallic film systems Fe–Al, Fe–Ni, Ti–Al, and Ti–Ni were irradiated using a laser interference pattern with laser fluence values from 50 to 250 mJ/cm². The thermal simulation was carried out to analyze the topographical effects. It was found that according to the laser fluence value, three different types of topographies can be obtained. For lower laser fluence values, the molten material in the lower layer induces deformation over the upper one obtaining a periodic pattern with a structure depth in the order of the layer thickness. If the laser fluence is high enough so that the upper layer reaches the melting point, this last is broken obtaining a high structured pattern consisting on a large depression and next two consecutive peaks. This threshold value can be estimated using the thermal simulation calculating the laser fluence at which the upper layer starts to melt. For higher laser fluence values, this pattern transforms into a periodical peak–valley structure with high structure depth. In both last two cases, the material at the interference peaks is removed. A model is suggested for explaining this behavior.     

Investigation of the interaction between electrical discharges and low resistivity silicon substrates

In this work the impact of single discharge pulses in air on single-crystalline, p-type silicon having a low bulk resistivity of 0.009-0.012 Ω cm is investigated. Compared to platinum specimens, the craters in silicon have lateral dimensions which are about one order of magnitude larger despite comparable values for the melting point and the melting energy. This finding is attributed to the substantially higher bulk resistivity of silicon leading a higher energy input into the substrate when spark loaded. The energy generated by joule heating is, however, distributed across a larger area due to a current spreading effect. To study the impact of different surface properties on the sparking behaviour, the crater formation on the silicon substrate is investigated applying coatings with different material properties, such as sputter-deposited aluminium layers and thermally-grown silicon dioxide. In general, the crater characteristics formed on unmodified silicon is not influenced when a thin aluminium layer of 24 nm is deposited. At higher film thickness above 170 nm, the sparking energy is almost completely absorbed in the top layer with low influence on the underlying silicon substrate. In the case of a dielectric top layer with a thickness of 155 nm, the formation of many small distinct craters is supported in contrast to a 500 nm-thick SiO₂ film layer where the generation of a single crater with a large area is energetically favoured. A surface roughness of several nm on the silicon probes has no measurable effect on crater formation when compared to an original surface characteristic with values in the sub-nm range.     

Advanced design of periodical architectures in bulk metals by means of Laser Interference Metallurgy

Patterning of high-resolution features on large-area metallic substrates has been performed by means of the Laser Interference Metallurgy method. Due to the intensity distribution of the interference pattern, this technique allows to locally and periodically heat the material surface to temperatures higher than the melting point with a long-range order. In this study, commercial stainless steel, copper and aluminum substrates were irradiated using single pulses of a nanosecond Nd:YAG laser with two and three laser-beam configurations operating at 355 nm of wavelength. Thermal simulations have been performed by finite element method and compared to the experiments. The results indicate that the structuring is produced by a surface tension driven mechanism induced by the thermal gradient. Moreover, metals with short thermal diffusion lengths present very homogeneous structures and the structure depth that can be achieved at relatively high laser fluences during single-pulse experiments is on the order of the diffusion length.     

Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties

ZnO/Cu/ZnO multilayers on glass with different copper layer thickness were prepared by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Cu. Different optimization procedure were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four point probes were used to explore the causes of the changes in electrical and optical properties. The sheet resistance of the structure was severely influenced by the deposition condition of both top ZnO and intermediate Cu layer. Effect of substrate temperature and annealing treatment on ZnO and Cu layer was analyzed. A sheet resistance of 10 Ω/sq and transmittance over 85% at 580 nm wavelength was achieved and could be reproduced by controlling the preparation process parameter. The results of an optimization condition of both oxide layers and metallic Cu layers are illustrated.     

Microstructure and wear resistance of composite layers on a ductile iron with multicarbide by laser surface alloying

Multicarbide reinforced metal matrix composite (MMC) layers on a ductile iron (QT600-3) were fabricated by laser surface alloying (LSA) using two types of laser: a 5 kW continuous wave (CW) CO₂ laser and a 400 W pulsed Nd:YAG laser, respectively. The research indicated that LSA of the ductile iron with multicarbide reinforced MMC layers demonstrates sound alloying layers free of cracks and porosities. The microstructure, phase structure and wear properties of MMC layers were investigated by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD), as well as dry sliding wear testing. The microstructure of the alloyed layer is composed of pre-eutectic austenite, ledeburite, spherical TiC, Cr₇C₃ and Cr₂₃C₆ with various morphologies. TiC particles are dispersed uniformly in the upper region of MMC layers. The average hardness of LSA layers by CO₂ laser and pulsed Nd:YAG laser is 859 HV_0.2 and 727 HV_0.2, respectively. The dry sliding wear testing shows the wear resistance of ductile iron is significantly improved after LSA with multicarbide.     

Frequency dependence of the output power of metal vapor lasers

The output power of two metal vapor lasers is measured versus operational frequency. The measured output of two lines of a copper vapor laser versus frequency has some maxima and minimums in the interval of 13-30 kHz, individually. So this behavior has occurred for a gold vapor laser in the interval of 12.5-25 kHz. It is found the relationship between these extremes.     

Growth of Cu2S/CdS nano-layered photovoltaic junctions for solar cell applications

Layered Cu₂S/CdS photovoltaic p-n junctions were fabricated via a simple and reproducible route. CdS inner layer was grown on ITO substrate using chemical bath deposition process for different times. The utilized bath consisted of cadmium sulfate and thiourea with concentrations of 0.05 M and 0.07 M, respectively. CdS layer grown for 600 min was uniform with a thickness of about 500 nm. Moreover, band gap energy of the CdS inner layers was measured as 2.40-2.44 eV depending on the thickness of the layer. Cu₂S outer layer was formed over the CdS via ion exchange chemical route, in a bath consisting of copper chloride aqueous solution. EDS, XRD, and XPS were utilized to characterize the formation of cadmium sulfide, and copper sulfide phases during the fabrication steps of the p-n junctions. Nano-layered cell, each layer 200-250 nm in thickness was fabricated with an apparent band gap of 2.22 eV. SEM imaging of both inner and the outer layers confirmed the uniformity and homogeneity of the CdS and the Cu₂S layers.