Octanethiolated Cu and Cu2O nanoparticles as ink to form metallic copper film

The synthesis and spectroscopic characterizations of size-controlled Cu and Cu₂O nanoparticles forming self-assembled 2D superlattices with hexagonal packing are described. The scanning electron microscopy (SEM), nuclear magnetic resonance (NMR), and X-ray photoelectron spectroscopy (XPS) were used to characterize the octanethiol-protected copper nanoparticles. Analysis of XPS confirms the formation of oxidized copper nanoparticles. Conductivity of copper metal film (0.1 μm) on the Si wafer can be improved simply by thermal annealing of copper monolayer protected clusters (MPCs) film (4.8 ± 0.5 × 10² μΩ cm) under air at 300 °C for 1 h, and then for another 5 h under a protective atmosphere of 90% N₂-10% H₂.     

Influence of Cu substrate surface oxides and heating rates during reflow on melting point of Sn-3.5Ag solder

Three types of copper substrates, fresh, aged (kept for years in open atmosphere) and acid washed aged, were investigated for the reflow behaviour of a solder using different heating rates. Melting point of the Sn-3.5Ag solder was lowered on the aged Cu substrate. Reduction was found to be higher in high heating rate and declined with the decrease in the heating rate. Melting point was lowered from 221 °C to 175 °C with the heating rate of 180 °C/min, but recovered to 210 °C when aged Cu substrate was washed with sulphuric acid. XPS depth profile revealed the presence of Cu₂O up to the greater depth in the aged substrate compared to the fresh and acid washed aged substrates. Study showed the relation of reduction in melting point with the depth of Cu₂O on the surface of aged Cu substrates. It was proposed that lower dissipation of heat generated in high heating rates by the oxidation of the flux carbon during reduction of high Cu₂O amount in aged carbon was responsible for the variations in melting points.     

Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper

Thin films of copper oxide were obtained through thermal oxidation (100-450 °C) of evaporated metallic copper (Cu) films on glass substrates. The X-ray diffraction (XRD) studies confirmed the cubic Cu phase of the as-deposited films. The films annealed at 100 °C showed mixed Cu-Cu₂O phase, whereas those annealed between 200 and 300 °C showed a single cubic Cu₂O phase. A single monoclinic CuO phase was obtained from the films annealed between 350 and 450 °C. The positive sign of the Hall coefficient confirmed the p-type conductivity in the films with Cu₂O phase. However, a relatively poor crystallinity of these films limited the p-type characteristics. The films with Cu and CuO phases show n-type conductivity. The surface of the as-deposited is smooth (RMS roughness of 1.47 nm) and comprised of uniformly distributed grains (AFM and SEM analysis). The post-annealing is found to be effective on the distribution of grains and their sizes. The poor transmittance of the as-deposited films (<1%) is increased to a maximum of ∼80% (800 nm) on annealing at 200 °C. The direct allowed band gap is varied between 2.03 and 3.02 eV.     

Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface

Nanostructured copper (II) oxide was formed on clean copper foil at room temperature using activated oxygen produced by RF discharge. CuO particles of approximately 10-20 nm were observed on the surface by Scanning Tunneling Microscopy (STM). The copper states and oxygen species of the model cupric oxide were studied by means of X-ray Photoelectron Spectroscopy (XPS). These oxide particles demonstrated abnormally high reactivity with carbon monoxide (CO) at temperatures below 100 °C. The XPS data showed that the interaction of CO with the nanostructured cupric oxide resulted in reduction of the CuO particles to Cu₂O species. The reactivity of the nanostructured cupric oxide to CO was studied at 80 °C using XPS in step-by-step mode. The initial reactivity was estimated to be 5 × 10⁻⁵ and was steadily reduced down to 5 × 10⁻⁹ as the exposure was increased. O1s spectral analysis allowed us to propose that the high initial reactivity was caused by the presence of non-lattice oxygen states on the surface of the nanostructured CuO. We established that reoxidation of the partially reduced nanostructured cupric oxide by molecular oxygen O₂ restored the highly reactive oxygen form on the surface. These results allowed us to propose that the nanostructured cupric oxide could be used for low temperature catalytic CO oxidation. Some hypotheses concerning the nature of the non-lattice oxygen species with high reactivity are also discussed.     

Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in a rapid thermal annealing (RTA) furnace at various temperatures for 5 min in vacuum, the samples were characterized by four probe measurement for sheet resistance, X-ray diffraction (XRD) analysis for phase identification, scanning electron microscopy (SEM) for surface morphology and transmission electron microscopy (TEM) for microstructure.The results show that the sample with ITO capping layer is a good diffusion barrier between copper and silicon at least up to 750 °C, which is 100 °C higher than that of the sample without ITO capping layer. The failure temperature of the sample with ITO capping layer is about 800 °C, which is 100 °C higher than that of the sample without ITO capping layer. The ITO capping layer on Cu/ITO/Si can obstacle the agglomeration of copper film and the appearance of Cu₃Si phase.     

Photoluminescence and X-ray diffraction studies on Cu2O

Cuprous oxide (Cu₂O) crystals were grown by the two-step crystallization method in air atmosphere conditions from polycrystalline thin copper foils. The method comprises two stages; in the first one the copper plates are oxidized at 1020 °C by some hours in line with its initial thickness. In the second stage, the growth of large crystalline areas is promoted by annealing the Cu₂O samples at 1100 °C for long periods. Raman scattering an X-ray measurements demonstrates the existence of the single-phase Cu₂O. The effects on the crystalline structure and photoluminescence (PL) response were studied as a function of the conditions used in the second stage of the synthesis method. PL spectra were taken from 10 to 180 K to define the main radiative recombination paths. Besides the near band excitonic transitions, two strong emission bands at 720 and 920 nm associated with relaxed excitons at oxygen and copper vacancies were detected. Both excitonic-vacancy bond transitions presented similar intensities that are related to the growth method. X-ray and Raman scattering measurements help to assess the samples crystalline quality.     

Enhanced reactivity and selectivity in oxidation of Cu(1 0 0) and α-Cu-Al(5 at.%)(1 0 0) surfaces studied by electron and ion spectroscopies

In this study we investigate the influence of alloying on the reactivity and bonding of oxygen on α-Cu-Al(5 at.%)(1 0 0) oriented single crystal surfaces by X-ray photoelectron spectroscopy (XPS), ultra-violet spectroscopy (UPS) and low energy ion scattering (LEIS) spectroscopy, at room temperature. It was found that alloying results in an enhanced reactivity of both Cu and Al sites in comparison with the pure metals. According to adsorption curves calculated from XPS, saturation of the alloy surface occurs for exposures of ∼15 L. At saturation the total amount of adsorbed oxygen is similar for the alloy and pure copper surfaces. It was determined that first mostly Al sites are oxidized, followed by simultaneous oxidation of Cu and Al sites. At saturation the amount of oxygen bonded to Cu sites is ∼1.7 larger then that bonded to Al sites. From a comparison of the XPS and LEIS data analysis as a function of oxygen exposure it was found that oxidation of α-Cu-Al(5 at.%)(1 0 0) alloy is a multi-stage process with fast and slow stages. These stages involve an interplay of chemisorption, sub-surface diffusion of oxygen and Al segregation. UPS measurements show an increase in the work function of the alloy surface with oxygen adsorption. This is a contrast to pure Cu surfaces where the work function decreases at the initial stages of oxidation followed by an increase with oxygen exposure. Annealing to 400 °C drives the oxidized alloy surface into its thermodynamic state resulting in the formation of an aluminum oxide layer. Possible mechanisms to explain the enhanced reactivity of the alloy surface compared to that of pure copper are suggested and discussed.     

Effect of humidity and UV-assistance on the preparation of erbium doped alumina by aerosol MOCVD process

The effect of deposition temperature, relative humidity of carrier gas and UV-assistance on the growth of Erbium-doped aluminium oxide films has been studied. The films were prepared from aluminium acetylacetonate (Al(C₅H₇O₂)₃) and erbium (III) Tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Er(TMHD)₃) by UV and aerosol-assisted metal-organic chemical vapour deposition, using air with controlled humidity as carrier gas. Amorphous transparent films were deposited between 350 and 460 °C. It was observed that UV assistance allows a large decrease down to 5 kJ/mol of the activation energy of the deposition reaction for deposition temperatures lower than 420 °C. More over, depositing under high air humidity induced higher deposition rate, lower level of organic contamination and higher film density. Under these conditions Er-doped aluminium oxide films with a refractive index value of 1.71 were obtained at 460 °C.     

Thermal stability and reaction properties of passivated Al/CuO nano-thermite

Thermal stability and reaction properties of Al-CuO system, a mixture of 50-200 nm aluminum nanoparticles passivated by nitrocellulose and 12 nm copper (II) oxide, were investigated with microstructure characterization, differential thermal analysis (DTA), and thermogravimetric analysis (TGA). Transmission electron microscopy observation confirmed that the passivation coating successfully hinders the oxidization. TGA revealed that the passivation shell does not influence the ignition temperature of the thermite reaction. Reaction chemistry of the nano-thermite was elucidated by heating the composite both in inert ambient and vacuum. It was found that the thermite reaction composes of three continuing steps: At 570 °C, Al is oxidized into Al₂O₃ by reacting with CuO, which forms Cu₂O and produces a significant amount of heat. Subsequently two endothermic reactions occur. Starting at 800 °C, alumina reacts with Cu₂O and forms CuAlO₂. Above this temperature CuAlO₂ will decompose and eventually produce alumina, Cu, and O₂ at 1000 °C. Since the nano-thermite reaction pathway differs greatly from bulk thermite reactions, these results are important to develop a nano-thermite platform that can be used for a novel low cost, low temperature, and copper based microjoining and advance IC packaging.     

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

An evaluation of a low temperature method (∼400 °C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of ∼12 ?. Equivalent oxide thickness values of around 11.5 ? and leakage current densities lower than 1 × 10⁻⁴ A/cm² at an operation voltage (−1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region.     

Effect of oxygen on the production of abnormally high heats of interaction with hydrogen chemisorbed on gold

Abnormally high heats, exceeding 1600 kJ/mol (16 eV) per molecular oxygen, are generated by interaction of the oxygen with the hydrogen adsorbed on gold surfaces at 125 °C. The highest heats were observed during the interactions of fine gold particles supported on titanium oxide, approaching 1700 kJ/mol for three consecutive 100 nmol pulses of O₂ interacting with the adsorbed hydrogen atoms. The heats rapidly decrease after the hydrogen is consumed. It was also observed that the interactions of the gold particles with pure oxygen in the presence of noble gases, such as argon and helium, produced the heats markedly higher than those observed in the absence of noble gases. The abnormally high heats revealed by this work reach values from 3.5 to 6.1 times higher than the heats of formation of gaseous water from molecular hydrogen and oxygen.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu_2−xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm² light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.     

Investigation of the structure and surface characteristics of Cu-Ni-M(III) mixed oxides (M = Al, Cr and In) prepared from layered double hydroxide precursors

The Cu-Ni-M(III) mixed oxides (M = Al, Cr and In) were prepared by calcination of layered double hydroxide precursors with Cu²⁺/Ni²⁺/M³⁺ ratio of 1/2/1. The materials were characterized by means of powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR), thermogravimetric-differential thermal analysis (TG-DTA), X-ray photoelectron spectroscopy (XPS) and low temperature N₂ adsorption-desorption experiments. The results indicated that calcination of precursors at 500 °C gave rise to mixed metal oxides including simple oxides and composite oxides, and the composition distributions of obtained oxides depended on the nature of trivalent cation in precursors. Under mild experimental conditions (atmospheric pressure and 25 °C), oxidation of aqueous phenol solutions by hydrogen peroxide exhibited that the Cr-containing mixed oxide achieved the highest conversion of phenol owing to the presence of more amount of composite oxide phase containing active copper centers, while the aluminum-containing one could significantly enhance deep oxidation of phenol into smaller molecules owing to the presence of more surface oxygen species.     

Kinetics of cation distribution in non-stoichiometric nickel gallate spinel

Cations in the spinel structure are distributed over sites of tetrahedral and octahedral coordination. The cation distribution and its kinetics in non-stoichiometric nickel gallate spinel were studied by high-temperature optical spectroscopy combined with the temperature-jump relaxation technique. It is found that up to 1200 °C the optical absorption spectra of the spinel are dominated by ligand field transitions of Ni²⁺ ions on octahedral sites. The kinetics of cation site-exchange were investigated from 850 to 1100 °C by monitoring the temporal evolution of the absorbance due to Ni²⁺ ions in octahedral sites after sudden changes in temperature. The temperature dependence of cation kinetics shows two regimes, one below and one above about 950 °C with activation energies of about 230 kJ/mol and 60 kJ/mol, respectively. Due to sample preparation, the low-temperature activation energy corresponds to an extrinsic vacancy migration regime. The activation energy of kinetics in the upper temperature regime is discussed in connection with the increasing reactivity of the optical absorber at high temperatures.     

The electrical properties of metal-oxide-semiconductor devices fabricated on the chemically etched n-InP substrate

The electrical properties of the Cu/n-InP and Al/n-InP Schottky barrier diodes (SBDs) with and without the interfacial oxide layer have been investigated by using current-voltage (I-V) measurements. The oxide layer on chemically cleaned indium phosphide (InP) surface has been obtained by exposure to water vapor at 1 ml/min at 200 °C before metal evaporation. The chemical composition of surface oxides grown on the InP is investigated using X-ray photoelectron spectroscopy (XPS). Phosphorus is present as In(PO₃)₃, InPO₄, P₂O₅ and P₄O₁₀. The values of 0.437 ± 0.007 and 0.438 ± 0.003 eV for the barrier height of the reference Cu/n-InP and Al/n-InP SBDs were obtained, respectively. Furthermore, the values of 0.700 ± 0.030 and 0.517 ± 0.023 eV for the barrier height of the oxidized Cu/n-InP and Al/n-InP SBD were obtained, respectively. The transport properties of the metal-semiconductor contacts have been observed to be significantly affected by the presence of the interfacial oxide layer. Devices built on the oxidized surfaces show improved characteristics compared with those built on chemically cleaned surfaces. The chemical reactivity of the metal with oxide and n-InP is important to the formation of the Schottky barriers. The reactive metal Al gave a low barrier height due to the reduction of oxide and reaction with InP. The transmission coefficients for the oxidized Cu/n-InP and Al/n-InP are equal to 2.23 × 10⁻⁵ and 4.60 × 10⁻², respectively.     

Evolution of steel surface composition with heating in vacuum and in air

X-ray photoelectron spectroscopy (XPS) has been used to investigate the changes in surface composition of three steels as they have undergone heating. The steels were mild steel, and two austenitic stainless steels, commonly designated 304 and 316 stainless steels. XPS measurements were made on the untreated samples, and then following heating for 30 min in vacuo and in a 1 × 10⁻⁶ Torr partial pressure of air, at temperatures between 100 °C and 600 °C.Mild steel behaves differently to the two stainless steels under the heating conditions. In mild steel the iron content of the surface increased, with oxygen and carbon decreasing, as a function of increasing temperature. The chemical state of the iron also changed from oxide at low temperatures, to metallic at temperatures above 450 °C.In both stainless steels the amount of iron present in the surface decreased with increasing temperature. The decrease in iron at the surface was accompanied by an increase in the amount of chromium at the steel surface. At temperatures above 450 °C the iron in both 304 and 316 stainless steels showed significant contributions from metallic iron, whilst the chromium present was in an oxide state. In 316 stainless steel heated to 600 °C there was some metallic chromium present in the surface layer.The surfaces heated in air showed the least variation in composition, with the major change being the loss of carbon from the surfaces following heating above 300 °C. There was also a minor increase in the concentration of chromium present on both the stainless steels heated under these conditions. There was also little change in the oxidation state of the iron and chromium present on the surface of these steels. There was some evidence of the thickening of the surface oxides as seen by the loss of the lower binding energy signal in the iron or chromium core level scans.The surfaces heated in vacuum showed a similar trend in the concentration of carbon on the surfaces, however the overall concentration of oxygen decreased throughout the heating of these steels. There were also significant changes in the oxidation state of the iron and chromium on these surfaces with significant amounts or iron and chromium present in the metallic form following heating up to 600 °C.It appears that the carbon contamination on the surfaces plays an important role in the fate of the surface oxide layer for all of the steels heated in a vacuum environment.     

Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_Ag||(0 0 1)_Si, [1 1 0]_Ag||[1 1 0]_Si, have been found to grow at substrate temperatures of ≥350 °C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.     

Adsorption and reaction of bicyclic hydrocarbons at Pt(1 1 1) and Sn/Pt(1 1 1) surface alloys: trans-decahydronaphthalene (C10H18) and bicyclohexane (C12H22)

Adsorption and desorption of trans-decahydronaphthalene (C₁₀H₁₈) and bicyclohexane (C₁₂H₂₂) can be used to probe important aspects of non-specific dehydrogenation leading to surface carbon accumulation and establish better estimates of activation energies for C-H bond cleavage at Pt-Sn alloys. This chemistry was studied on Pt(1 1 1) and the (2 × 2)-Sn/Pt(1 1 1) and (√3 × √3)R30°-Sn/Pt(1 1 1) surface alloys by using temperature programmed desorption (TPD) mass spectroscopy and Auger electron spectroscopy (AES). These hydrocarbons are reactive on Pt(1 1 1) surfaces and fully dehydrogenate at low coverages to produce H₂ and surface carbon during TPD. At monolayer coverage, 87% of adsorbed C₁₀H₁₈ and 75% C₁₂H₂₂ on Pt(1 1 1) desorb with activation energies of 70 and 75 kJ/mol, respectively. Decomposition of C₁₀H₁₈ is totally inhibited during TPD on these Sn/Pt(1 1 1) alloys and decomposition of C₁₂H₂₂ is reduced to 10% of the monolayer coverage on the (2 × 2)-Sn/Pt(1 1 1) alloy and totally inhibited on the (√3 × √3)R30°-Sn/Pt(1 1 1) alloy. C₁₀H₁₈ and C₁₂H₂₂ are more weakly chemsorbed on these two alloys compared to Pt(1 1 1) and these molecules desorb in narrow peaks characteristic of each surface with activation energies of 65 and 73 kJ/mol on the (2 × 2) alloy and 60 and 70 kJ/mol on the (√3 × √3)R30°-Sn/Pt(1 1 1) alloy, respectively. Alloyed Sn has little influence on the monolayer saturation coverage of these two molecules, and this is decreased only slightly on these two Sn/Pt(1 1 1) alloys. The use of these two probe molecules enables an improved estimate of the activation energy barriers E* to break aliphatic C-H bonds in alkanes on Sn/Pt alloys; E* = 65-73 kJ/mol on the (2 × 2)-Sn/Pt(1 1 1) alloy and E* ? 70 kJ/mol on the (√3 × √3)R30°-Sn/Pt(1 1 1) alloy.     

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)₂] and copper HexaFluoroAcetylacetonate [Cu(HFA)₂] sources. A thermal, cold-wall, reduced pressure (3325–5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H₂O vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 cm for copper films deposited on Si(100) and 3.44 cm for copper films deposited on glass at substrate temperatures of 265° C and a [Cu(acac)₂] source temperature of 147° C with the use of H₂O vapor were measured. When [Cu(HFA)₂] was used, the substrate temperature was 385° C and the source temperature was 85° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)₂] source. A deposition rate of 11 nm/min was obtained with Cu(acac)₂ as the source and the rate was 44.4 nm/min with the Cu(HFA)₂ source; both were obtained with the use of H₂O vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS.