阳离子空位磁矩起因探讨

运用群论和分子轨道理论的方法, 系统地研究了非掺杂磁性半导体中阳离子空位产生磁矩的原因, 并用海森堡模型阐明了磁矩之间的交换耦合机理. 研究发现: 阳离子空位磁矩的大小与占据缺陷能级轨道的未配对电子数有关, 而缺陷能级的分布与空位的晶场对称性密切相关; 通过体系的反铁磁状态和铁磁状态下的能量差估算交换耦合系数J₀, 交换耦合系数J₀的正负可以用来预测磁矩之间的耦合是否为铁磁耦合:J₀>0, 则表明磁矩之间的耦合为铁磁耦合, 反之为反铁磁耦合. 最后指出空位的几何构型发生畸变(John-Teller效应)的原因: 缺陷能级轨道简并度的降低与占据缺陷能级轨道的电子的数目有直接的关系.     

非掺杂锐钛矿相TiO_2铁磁性的第一性原理研究

运用第一性原理的方法研究了锐钛矿相TiO_2中O空位(V_o)和Ti空位(V_(Ti))的电子结构和磁学性质.计算结果表明,单独的V_o并不会诱发局域磁矩,V_(Ti)可以产生大小为4μB(1μ=9.274×10~(-21)emu,CGS)的局域磁矩,主要分布在其周围的0原子上.这两种缺陷产生局域磁矩的原因在文中做了详细的介绍.此外,由两个V_(Ti)诱发的局域磁矩之间的磁耦合相互作用为铁磁耦合,其交换耦合系数J_0为88.7 meV,意味着V_(Ti)间的铁磁耦合可以持续到室温.虽然V_o并不会产生局域磁矩,但是引入V_o可以进一步提升两个V_(Ti)之间的耦合强度,这可以对非掺杂锐钛矿结构的TiO_2体系中铁磁性的来源作出解释:V_(Ti)产生了局域磁矩,而V_o增强了V_(Ti)间长程的铁磁耦合相互作用.此外,还提出了局域磁矩之间耦合的第二类直接交换作用模型.     

氮掺杂的金刚石磁性研究

采用第一性原理计算方法研究金刚石中由空位或者N掺杂引起的磁特性. 发现-1价和-2 价的碳空位能分别产生3 μ_B和2μ_B的磁矩; -2价的碳空位能够引发长程有序的铁磁耦合状态, 而-1价的碳空位更倾向于反铁磁耦合.掺杂N元素能有效地控制空位的荷电状态及相应的磁相互作用, 这一结果为在金刚石中实现非过渡族金属掺杂的铁磁性提供了一条新的路径. 关键词： 第一性原理计算 氮掺杂 金刚石 磁性     

含空位二维六角氮化硼电子和磁性质的密度泛函研究

基于密度泛函理论的第一性原理计算, 研究了含B原子空位(V_B), N原子空位(V_N), 以及含B–N键空位 (V_B+N)缺陷的二维氮化硼(h-BN)的电子和磁性质. 在微观结构上, V_B体系表现为在空位附近的N原子重构成等腰三角形, V_N体系靠近空穴的B 原子形成等边三角形, V_B+N体系靠近空穴处的B和N原子在h-BN平面上重构为梯形. 三种空位缺陷都使h-BN的带隙类型从直接带隙转变为间接带隙. V_B体系的总磁矩为1.0 μ_B, 磁矩全部由N原子贡献. 其中空穴周围的三个N原子磁矩方向不完全一致, 存在着铁磁性和反铁磁性两种耦合方式. 对于V_N 体系, 整个晶胞内的总磁矩也为1.0 μ_B, 磁矩在空穴周围区域呈现一定的分布. 关键词： 二维h-BN 空位 电子结构 磁性     

氧空位对Co掺杂TiO2稀磁半导体中杂质 分布和磁交换的影响

本文使用基于密度泛函理论的第一性原理方法研究了Co掺杂TiO₂稀磁半导体中氧空位对体系能量和磁性的影响. 通过对总能量的计算发现当引入氧空位后近邻杂质体系能量高于均匀掺杂体系, 同时氧空位易在Co近邻位置富集. 进而发现氧空位的存在及其占位可以影响Co离子间的磁交换, 近邻Co离子体系下氧空位的引入使Co离子间的铁磁耦合减弱; 非近邻Co离子体系下, 底面氧空位使Co离子间呈反铁磁耦合而顶点氧空位使Co离子间呈铁磁耦合. 总之, 氧空位的存在对Co掺杂TiO₂材料的能量及磁性都有较大影响.     

ZnO1-xCx稀磁半导体的磁特性的第一性原理和蒙特卡罗研究

利用第一性原理计算得到C掺杂ZnO的电子结构,发现系统具有半金属的电子结构.从态密度的分析可以看到Zn-3d和C-2p电子具有强烈的杂化作用,这是体系具有相对稳定铁磁基态的原因.利用第一性原理得到的磁性耦合强度并结合蒙特卡罗模拟得到了C掺杂浓度为555%,833%,125%的ZnO_1-xC_x分别具有210 K,260 K,690 K的居里温度.同时,详细地分析了C掺杂引起的电子转移和C,Zn,O的s,p和d电子的自旋向上和自旋向下电子数的变化.通过比较研究,发现ZnO_1-xC_x的局域磁矩主要来源于Zn-3d 电子和C-2p 电子之间的相互作用,而局域磁矩耦合倾向于RKKY耦合. 关键词： 1-xC_x')" href="#">ZnO_1-xC_x 磁性 第一性原理 蒙特卡罗模拟     

金红石TiO_2本征缺陷磁性的第一性原理计算

基于密度泛函理论的平面波超软赝势方法模拟计算了金红石相TiO_2的四种本征缺陷(氧空位、钛空位、钛间隙缺陷、氧间隙缺陷)和两种复合缺陷(氧空位与氧间隙复合缺陷、钛空位与钛间隙复合缺陷)的铁磁特性.结合态密度、电子分布及晶体结构变化分析可知,四种本征缺陷均会在系统内引入缺陷态.氧空位、钛间隙缺陷使费米面升高,引起自旋极化,引入磁矩分别为1.62μB与3.91μB;钛空位的缺陷态处于价带顶,使费米面进入价带,表现出明显的p型半导体特性,引入磁矩约为2.47μB;氧间隙缺陷引入缺陷态但仍然处于自旋对称状态,费米面略微下降;氧空位与氧间隙复合缺陷使费米面上升的程度比单个氧空位时大,模拟的超晶胞保持了氧空位的铁磁特性,大小为1.63μB;钛空位与钛间隙复合缺陷以反铁磁方式耦合,但超晶胞仍具有一定的铁磁特性.     

新型Heusler合金RuMn2Sn的磁性形状记忆的第一性原理研究

采用基于密度泛函理论的第一性原理方法,对新型Heusler合金RuMn₂ Sn的晶体结构、电子结构、磁性、四方变形等性质进行了系统的研究.研究结果表明:1)在奥氏体态下,磁性原子Mn对体系总磁矩的贡献最大,其中Mn（A）和Mn（B）原子磁矩的值不等并且呈反平行耦合,导致RuMn₂ Sn具有稳定的亚铁磁基态,该结果与实验一致;2)由XA型立方结构至四方结构的四方变形中,发现c/a约为1.23处存在一个能量更低的稳定的马氏体相,其呈现反铁磁的特性;3)在奥氏体态和马氏体态下,Mn（A）和Mn（B）原子之间弱的d-d直接交换作用是维持它们之间亚铁磁和反铁磁耦合的主要原因.根据上述计算结果,预测RuMn₂ Sn具有良好的磁性形状记忆效应.     

准周期层状铁磁超晶格的实空间重整化群方法

本文用实空间重整化群方法讨论了准周期层状铁磁超晶格的磁自旋波,用Reduce语言推导了decimation变换公式,从而求得了局域格林函数、局域态密度和约化磁矩。发现局域态密度的带宽和约化磁矩与最近邻相互作用J₁、J₂及格点自旋s_a、s_b密切相关。     

La0.7Sr0.3-x□xCoO3(0≤x≤0.2)钴氧化物中锶空位诱导的自旋态转变效应

研究了锶空位对La_0.7Sr_0.3-x_xCoO₃ (0≤x≤0.2)多晶钴氧化物结构、磁性和输运性质的影响.结果表明：随着锶空位浓度x的增大,A位阳离子无序度增大,导致铁磁双交换作用减弱及反铁磁超交换作用增强,两者相互竞争,出现团簇自旋玻璃态;空位浓度超过10%后,Co—O键长迅速减小,导致晶体场劈裂能加大,大部分三价钴离子以低自旋态出现,系统基态为类超顺磁态, 关键词： 空位掺杂 钴氧化物 自旋转变     

First-principles study of the structural,electronic, and magnetic properties of double perovskite Sr_2FeReO_6 containing various imperfections

The structural, electronic, and magnetic properties of double perovskite Sr_2FeReO_6 containing eight different imperfections of FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, V_(Fe), V_(Re), VOor V_(Sr) vacancies have been studied by using the first-principles projector augmented wave(PAW) within generalized gradient approximation as well as taking into account the on-site Coulomb repulsive interaction(GGA+U). No obvious structural changes are observed for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges, or VSrvacancy defects. However, the six(eight) nearest oxygen neighbors of the vacancy move away from(close to) VFeor V_(Re)(VO) vacancies. The half-metallic(HM) character is maintained for the imperfect Sr_2FeReO_6 containing FeReor ReFeantisites, Fe1–Re4 interchange, V_(Fe),VO or V_(Sr) vacancies, while it vanishes when the Fe1–Re1 interchange or VRevacancy is presented. So the Fe1–Re1 interchange and the VRevacancy defects should be avoided to preserve the HM character of Sr_2FeReO_6 and thus usage in spintronic devices. In the FeReor ReFeantisites, Fe1–Re1 or Fe1–Re4 interchanges cases, the spin moments of the Fe(Re)cations situated on Re(Fe) antisites are in an antiferromagnetic coupling with those of the Fe(Re) cations on the regular sites. In the V_(Fe), V_(Re), VO, or V_(Sr) vacancies cases, a ferromagnetic coupling is obtained within each cation sublattice,while the two cation sublattices are coupled antiferromagnetically. The total magnetic moments μtot(μB/f.u.) of the imperfect Sr_2FeReO_6 containing eight different defects decrease in the sequence of VSrvacancy(3.50), VRevacancy(3.43),FeReantisite(2.74), VOvacancy(2.64), VFevacancy(2.51), ReFeantisite(2.29), Fe1–Re4 interchange(1.96), Fe1–Re1interchange(1.87), and the mechanisms of the saturation magnetization reduction have been analyzed.     

Structural and magnetic properties of Mn-doped ZnO powders

A mixture of bi(acetylacetonato) zinc(II)hydrate and tris(acetylacetonato) manganese(III) complexes was thermally co-dissociated to synthesize Mn-doped ZnO powders. In order to examine the effect of oxygen vacancies on the ferromagnetic coupling of Mn ions, two preparation routes were used: in route (I) the preparation was done in an open environment, whereas in route (II) the preparation was done in a closed environment. The X-ray diffraction (XRD) and the X-ray fluorescence (XRF) measurements indicate that the Mn content in the three samples are 3.9% (I), 3.3% (II) and 4.2% (II). The XRD results showed that the Mn ions were incorporated in the ZnO crystal and that a Zn_1−xMn_xO solid solution has formed. The magnetic characterization indicated that only samples prepared via route (II) exhibited a room temperature ferromagnetic component of magnetization. Furthermore, magnetic analysis showed that the magnetic moment per dopant ion in the samples examined was in the range of 4.2-6.1 μ_B/Mn. The percentages of coupled Mn atoms to the total number of Mn atoms were found to be extremely small (less than 0.1%), which by itself cannot explain the observed RT hysteresis loops. Thus, in order to produce long-range ferromagnetic order in these samples, the FM coupling has to be mediated via defects. The observed FM in this study may be attributed to the presence of oxygen vacancies, which mediate the ferromagnetic exchange between the coupled Mn ions. This is consistent with the bound magnetic polarons (BMP) model where defects like oxygen vacancies cause the polarons to overlap and give rise to a long-range ferromagnetic order in dilute magnetic semiconductors (DMS).     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Pressure induced magnetic and semiconductor–metal phase transitions in Cr_2MoO_6

We investigate magnetic ordering and electronic structures of Cr_2MoO_6under hydrostatic pressure. To overcome the band gap problem, the modified Becke and Johnson exchange potential is used to investigate the electronic structures of Cr_2MoO_6. The insulating nature at the experimental crystal structure is produced, with a band gap of 1.04 eV, and the magnetic moment of the Cr atom is 2.50 μB, compared to an experimental value of about 2.47 μB. The calculated results show that an antiferromagnetic inter-bilayer coupling–ferromagnetic intra-bilayer coupling to a ferromagnetic inter-bilayer coupling–antiferromagnetic intra-bilayer coupling phase transition is produced with the pressure increasing. The magnetic phase transition is simultaneously accompanied by a semiconductor–metal phase transition. The magnetic phase transition can be explained by the Mo–O hybridization strength, and ferromagnetic coupling between two Cr atoms can be understood by empty Mo-d bands perturbing the nearest O-p orbital.     

Characteristics of the silver-doped TiO2 nanoparticles

Silver ions doping made enhancement of the photocatalytic activity of TiO₂, which was determined by degradation of methyl orange (MO), a probe molecule, in an aqueous solution. X-ray diffraction (XRD) investigation demonstrated that the silver doping changed lattice parameters of TiO₂, which should attribute to the O vacancies produced by the substitutional silver ion at lattice site. On above results, a doping mechanism of silver ions in TiO₂ was also discussed.     

Strain-tuned magnetic properties in (Ga,Fe)Sb:First-principles study

In view of the importance of enhancing ferromagnetic(FM) coupling in dilute magnetic semiconductors(DMSs),the effects of strain on the electronic structures and magnetic properties of(Ga,Fe)Sb were examined by a first-principles study.The results of the investigation indicate that Fe_(Ga) substitution takes place in the low-spin state(LSS) with a total magnetic moment of 1μB in the strain range of-3% to 0.5%,which transitions to the high-spin state(HSS) with a total magnetic moment of 5μB as the strain changes from 0.6% to 3%.We attribute the changes in the amount and distribution of the total moment to the influence of the crystal field under different strains.The FM coupling is strongest under a strain of about0.5%,but gradually becomes weaker with increasing compressive and tensile strains.The magnetic coupling mechanism is discussed in detail.Our results highlight the important contribution of strain to magnetic moment and FM interaction intensity,and present an interesting avenue for the future design of high Curie temperature(T_C) materials in the(Ga,Fe)Sb system.     

Large reversible magnetocaloric effect induced by metamagnetic transition in antiferromagnetic HoNiGa compound

The magnetic properties and magnetocaloric effects(MCE) of Ho Ni Ga compound are investigated systematically.The Ho Ni Ga exhibits a weak antiferromagnetic(AFM) ground state below the Neel temperature TNof 10 K, and the AFM ordering could be converted into ferromagnetic(FM) ordering by external magnetic field. Moreover, the field-induced FM phase exhibits a high saturation magnetic moment and a large change of magnetization around the transition temperature,which then result in a large MCE. A large-?S_M of 22.0 J/kg K and a high RC value of 279 J/kg without magnetic hysteresis are obtained for a magnetic field change of 5 T, which are comparable to or even larger than those of some other magnetic refrigerant materials in the same temperature range. Besides, the μ_0H~(2/3)dependence of |?S_M~(pk)| well follows the linear fitting according to the mean-field approximation, suggesting the nature of second-order FM–PM magnetic transition under high magnetic fields. The large reversible MCE induced by metamagnetic transition suggests that Ho Ni Ga compound could be a promising material for magnetic refrigeration in low temperature range.     

四方相多铁BiMnO_3电控磁性的理论研究

钙钛矿结构BiMnO_3作为同时具有铁电性与铁磁性的多铁材料,在人工神经网络方面可以作为一种潜在的人工突触材料,从而设计出新型多铁人工突触器件.本文使用第一性原理计算的方法,分别研究了四方相BiMnO_3在xy面内施加0.18%与4%应力条件下的铁电情况,以及Mn原子磁矩随着铁电极化强度变化的曲线.结果表明,在四方相多铁BiMnO_3中,Mn原子磁矩会随着极化强度的增强而增大,表示其铁磁性可以在一定程度上由其铁电极化来进行调控,并且应力越大,其磁矩变化范围就越大.这一结果使得多铁BiMnO_3在人工突触器件设计方面拥有潜在的应用价值,多铁性使其在作为人工突触器件材料中具有更多可调控的自由度,从而可用于模拟多突触连接.这可为将来构造类脑芯片打下一定的理论基础.