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1.
谢红献  于涛  刘波 《物理学报》2011,60(4):46104-046104
用分子动力学方法研究了温度对镍基单晶高温合金γ/γ'相界面上错配位错运动的影响.研究结果表明:无论是在低温还是在高温下,错配位错的运动都是通过扭折的形核及扭折沿位错线的迁移来实现;在低温时错配位错的相互作用有利于错配位错的运动;然而在高温时错配位错的相互作用可以阻碍错配位错的运动,从而阻碍γ和γ'相界面的相对滑动,有利于提高镍基单晶高温合金的高温力学性能. 关键词: 镍基单晶高温合金 相界面 错配位错 分子动力学模拟  相似文献   

2.
朱弢  王崇愚  干勇 《物理学报》2009,58(13):156-S160
运用分子动力学方法,研究了镍基单晶高温合金γ/γ′相界面错配位错网络的特征.通过对界面位错的形成、位错的反应、位错网络的演化等现象的分析发现,在温度场影响下,位错网络将由弛豫初期的十四面体演化成最终的正六面体. 关键词: 镍基单晶高温合金 相界面错配位错 位错网络演化 分子动力学  相似文献   

3.
用分子动力学方法研究了镍基单晶高温合金γ/γ′(001)相界面上三种各具特征的原子堆垛结构. 能量学计算发现,存在最优构型,动力学模拟显示不同构型的界面弛豫后,在相界面上都“成对”出现刃型错配位错. 相关计算表明体系能量、界面形成能及弛豫能都依赖于界面原子堆垛特征,而几何特征则具共性,即不同原子构型的界面具有同一的应力释放模式.  相似文献   

4.
胡兴健  郑百林  胡腾越  杨彪  贺鹏飞  岳珠峰 《物理学报》2014,63(17):176201-176201
利用分子动力学方法分别模拟金刚石压头压入Ni模型和Ni基单晶合金γ/γ′模型的纳米压痕过程,通过计算得到两种模型[001]晶向的弹性模量及硬度.采用中心对称参数分析不同压入深度时两种模型内部位错形核、长大过程以及Ni基单晶合金γ/γ′(001)相界面错配位错对纳米压痕过程的影响.结果显示:压入深度0.641 nm之前,两种模型的压入载荷-压入深度曲线相似,说明此时相界面处的错配位错对纳米压痕过程的影响很小;压入深度0.995 nm时,在错配位错处发生位错形核,晶体在γ相中沿着{111}面滑移,随即导致Ni基单晶合金γ/γ′模型压入载荷的下降,并在压入深度达到1.487 nm之前低于Ni模型相同压入深度时的压入载荷;压入深度从1.307 nm开始,由于相界面错配位错的阻碍作用,Ni基单晶合金γ/γ′模型压入载荷上升速度较快.  相似文献   

5.
耿翠玉  王崇愚  朱弿 《物理学报》2005,54(3):1320-1324
用分子动力学方法研究了镍基单晶高温合金γ/γ′(001)相界面上三种各具特征的原子堆垛结构. 能量学计算发现,存在最优构型,动力学模拟显示不同构型的界面弛豫后,在相界面上都“成对”出现刃型错配位错. 相关计算表明体系能量、界面形成能及弛豫能都依赖于界面原子堆垛特征,而几何特征则具共性,即不同原子构型的界面具有同一的应力释放模式.  相似文献   

6.
镍基单晶超合金Ni/Ni3Al晶界的分子动力学模拟   总被引:2,自引:1,他引:1       下载免费PDF全文
文玉华  朱弢  曹立霞  王崇愚 《物理学报》2003,52(10):2520-2524
在镍基单晶超合金中,由于单晶Ni的晶格常数比单晶Ni3Al的稍小,在Ni/Ni3Al晶界面 上必然要出现错配.采用分子动力学模拟了镍基单晶超合金的Ni/Ni3Al晶界的结 构,考虑 了两个不同的初始模型,并进行了分子动力学弛豫.弛豫的结果均表明:由于晶格的差异形 成的错配能不是通过长程晶格错配的方式来释放,而是通过在局部区域形成位错的方式释放 的.由于Ni3Al相周围Ni相环境的不同,形成的位错也有所不同. 关键词: 镍基单晶超合金 晶界 分子动力学模拟  相似文献   

7.
镍基单晶超合金Ni/Ni3Al晶界的分子动力学模拟   总被引:3,自引:3,他引:0       下载免费PDF全文
在镍基单晶超合金中,由于单晶Ni的晶格常数比单晶Ni3Al的稍小,在Ni/Ni3Al晶界面上必然要出现错配.采用分子动力学模拟了镍基单晶超合金的Ni/Ni3Al晶界的结构,考虑了两个不同的初始模型,并进行了分子动力学弛豫.弛豫的结果均表明:由于晶格的差异形成的错配能不是通过长程晶格错配的方式来释放,而是通过在局部区域形成位错的方式释放的.由于Ni3Al相周围Ni相环境的不同,形成的位错也有所不同.  相似文献   

8.
胡兴健  郑百林  杨彪  余金桂  贺鹏飞  岳珠峰 《物理学报》2015,64(7):76201-076201
针对Ni基单晶合金建立初始压入γ 相的γ /γ' 模型和初始压入γ'相的γ'/γ 模型, 采用分子动力学方法模拟金刚石压头压入两种模型的纳米压痕过程, 计算两种模型[001]晶向硬度. 采用中心对称参数分析两种模型(001)相界面错配位错对纳米压痕过程的影响. 结果显示: 弛豫后, 两种模型(001)相界面错配位错形式不同, 其中γ'/γ 模型(001)相界面错配位错以面角位错形式存在; 压入深度在0.930 nm 之前, 两种模型(001)相界面错配位错变化不大, 压入载荷-压入深度及硬度-压入深度曲线较符合; 压入深度在0.930 nm之后, γ'/γ 模型(001)相界面错配位错长大很多, 导致相同压入深度时γ'/γ 模型比γ /γ'模型压入载荷和硬度计算结果小; 压入深度在2.055 nm之后, γ /γ'模型(001)相界面错配位错对γ 相中位错进入γ'相有阻碍作用, 但仍有部分位错越过(001) 相界面进入γ' 相中, γ'/γ 模型(001)相界面处面角位错对γ' 相中位错进入γ 相有更明显的阻碍作用, 几乎无位错越过(001) 相界面进入γ 相中, 面角位错的强化作用更明显, 所以γ'/γ 模型比γ /γ'模型压入载荷上升速度快.  相似文献   

9.
赵雪川  刘小明  高原  庄茁 《物理学报》2010,59(9):6362-6368
本文采用分子动力学方法研究了在剪切载荷作用下,Cu(100)扭转晶界对Cu柱屈服强度的影响.模拟结果发现,在加载过程中,低角度扭转晶界形成的位错网发生位错形核与扩展,位错之间的塞积作用提高了Cu柱的屈服强度;对于高角度扭转晶界,晶界发生滑动降低了Cu柱的屈服强度.同时发现,随着扭转角度的增加,Cu柱的屈服强度先增大,当扭转角度大于临界角度时,Cu柱的屈服应力逐渐减小.这表明剪切载荷作用下,两种不同的机理主导Cu柱的屈服,对于小于临界角度的扭转晶界,Cu柱的屈服由晶界位错形核和扩展机理主导,对于大于临界角度 关键词: 扭转晶界 分子动力学 位错形核 晶界滑移  相似文献   

10.
单向拉伸作用下Cu(100)扭转晶界塑性行为研究   总被引:1,自引:0,他引:1       下载免费PDF全文
应用分子动力学方法研究了在不同扭转角度下的Cu(100)失配晶界位错结构,以及不同位错结构对晶界强度的影响.模拟结果表明:小角度扭转晶界上将形成失配位错网,失配位错密度随着晶粒之间的失配扭转角度的增加而增加.变形过程中,位错网每个单元中均产生位错形核扩展.位错之间的塞积作用影响晶界的屈服强度:随着位错网格密度的增加,位错之间的塞积作用增强,界面的屈服强度得到提高.大角度扭转晶界将形成面缺陷,在变形中位错由晶界角点处形核扩展,此时由于面缺陷位错开动应力趋于一致,因此晶界的临界屈服强度趋于定值. 关键词: 扭转晶界 失配位错网 强化机理 分子动力学  相似文献   

11.
The structural evolution of misfit dislocation networks at γ/γ′ phase interfaces in Ni-based single crystal superalloys under tensile loading and temperatures is simulated by molecular dynamics. From the simulation, we find that, with increasing load or temperature, the patterns of dislocation networks on the (100), (110) and (111) phase interfaces change from regular to irregular or disappear. Under the same load and temperature, the dislocation networks of the different phase interfaces show different degrees and patterns of damage. The density and stability of the dislocation networks decrease with increasing temperature. When the interfacial dislocation networks become more regular, the γ/γ′ interfaces become more stable. The simulated results are supported by related experimental findings. Moreover, based on MD simulations, the averaged stress–strain responses for different phase interfaces under loading are presented. The results indicate that the combined influences of temperature and load play an important role for the structure evolution of misfit dislocation networks at γ/γ′ phase interfaces of Ni-based superalloys.  相似文献   

12.
The microstructures of a single-crystal nickel-base superalloy were observed by transmission electron microscopy (TEM) before and after thermo-mechanical fatigue. Both dislocation configurations and γ′ precipitate morphologies under in-phase (IP) testing were found to be clearly different from those under out-of-phase (OP) testing. Under IP testing, dense hexagonal dislocation networks were found on the horizontal interfaces, and irregular dislocation networks on the vertical interfaces. With decreasing mechanical strain amplitude, rafting of γ′ precipitates was more pronounced. Under OP testing, no dislocation networks were found on the γ/γ′ interfaces; also, γ′ precipitates were sheared by superlattice stacking faults, and were not clearly rafted. The characteristic dislocation networks and partials of the stacking fault are analysed and the rafting mechanism of the γ′ precipitates is discussed.  相似文献   

13.
The structural evolution of interfacial dislocation networks in a Ni‐based single crystal superalloy under various stress states was simulated by molecular dynamics (MD). From the simulation, we found that the dislocation network exhibits different deformation and damage mechanisms under various stress states. The square dislocation network at the (100) phase interface is the easiest to damage under a [100] uniaxial load, but more difficult to damage when multi‐axial loads are applied. This suggests that the application of a [100] direction axial load is the key factor for the damage of the square dislocation network, which leads to failure of the Ni‐based single crystal superalloy under the [100] axial centrifugal load. Moreover, based on MD simulations, the effects of the stress state on γ′ rafting were explored. The results indicate that the morphology of γ′ raft depends on the damage structures of the dislocation network under various stress states.  相似文献   

14.
T. Link  A. Epishin  B. Fedelich 《哲学杂志》2013,93(13):1141-1159
It is shown experimentally that, during annealing and creep under low applied stresses, matrix dislocation loops frequently cross-glide. The periodic length of the zigzag dislocations deposited in the interfaces is equal to that of the γ/γ′-microstructure. Initially, the zigzag dislocations move in the (001) interface by a combination of glide and climb but then they stop near the γ′-edges and align along ?100?. Reactions of such dislocations lead to the formation of square interfacial networks consisting of ?100? oriented edge dislocations. The complex dislocation movement is explained by the inhomogeneity of the misfit stresses between γ- and γ′-lattices. The tensile components of the stress tensor drive the dislocations through the channel, whereas the shear components near the γ′-edges cause the zigzag movement and the ?100? alignment. The total effect is the most efficient relaxation of the misfit stresses. The results are relevant, especially for single-crystal superalloys of the newest generations, which have an increased γ/γ′-misfit due to the high level of refractory elements.  相似文献   

15.
对于高温、高压、高应变速率加载条件下的材料冲击变形行为,动态晶体塑性模型能够直接反映晶体中塑性滑移的各向异性及其对温度、压力和微观组织结构的依赖性,因而广泛应用于材料的动态冲击力学响应、微观结构演化以及动态损伤破坏的模拟。本文综述了高压冲击下动态晶体塑性有限元的理论模型,主要包括变形运动学、包含状态方程的超弹性本构模型和晶体塑性本构模型,涉及位错滑移、相变、孪生等塑性变形机制,以及层裂、绝热剪切带等动态破坏方式。  相似文献   

16.
Y. Cui 《哲学杂志》2013,93(33):3142-3171
Abstract

Molecular dynamics (MD) simulations under different mechanical and thermal constraints are carried out with a nanovoid embedded inside a single-crystal, face-centred-cubic copper. The dislocation emission angles measured from MD plots under 0.1 K, uniaxial-strain simulation are in line with the theoretical model. The dislocation density calculated from simulation is qualitatively consistent with the experimental measurement in terms of a saturation feature. The ‘relatively farthest-travelled’ atoms are employed to reflect the correlation between the dislocation structure and the void growth. At a smaller scale, the incomplete shear dislocation loops on the slip plane contribute to the local material transport. At a larger scale, the dislocation structures formed by those incomplete shear loops further facilitate the growth of nanovoid. Compared to the uniaxial-strain case, the void growth under the uniaxial-stress is very limited. The uniaxial-strain loading results in an octahedron void shape. The uniaxial-stress loading turns the nanovoid into a prolate ellipsoid along the loading direction. In the simulation, the largest specimen contains 12 million atoms and the lowest strain rate applied is 2 × 106 s?1. Under all the different thermomechanical constraints concerned, the formation of incomplete shear dislocation loops are found capable of growing the void.  相似文献   

17.
The evolution of misfit dislocation network at γ/γ phase interface and tensile mechanical properties of Ni-based single crystal superalloys at various temperatures and strain rates are studied by using molecular dynamics (MD) simulations. From the simulations, it is found that with the increase of loading, the dislocation network effectively inhibits dislocations emitted in the γ matrix cutting into the γ phase and absorbs the matrix dislocations to strengthen itself which increases the stability of structure. Under the influence of the temperature, the initial mosaic structure of dislocation network gradually becomes irregular, and the initial misfit stress and the elastic modulus slowly decline as temperature increasing. On the other hand, with the increase of the strain rate, it almost has no effect on the elastic modulus and the way of evolution of dislocation network, but contributes to the increases of the yield stress and tensile strength. Moreover, tension–compression asymmetry of Ni-based single crystal superalloys is also presented based on MD simulations.  相似文献   

18.
冲击加载下孔洞贯通的微观机理研究   总被引:1,自引:0,他引:1       下载免费PDF全文
利用分子动力学方法计算模拟了沿〈100〉晶向冲击加载下单晶铜中双孔洞的贯通过程.发现孔洞周围发射剪切型位错环是孔洞塌缩和增长的原因.在拉伸阶段,孔洞首先分别独立增长,随后其周围塑性变形区开始交叠和相互作用,最后两个孔洞开始直接贯通.这种贯通模式和实验对延性材料中孔洞贯通过程的显微观察结果一致.对四种不同θ值(θ为两个孔洞中心连线与冲击加载方向之间的夹角)的模型分别进行了计算模拟,发现在相同的冲击加载强度下,θ=0°和θ=30°的孔洞之间没有相互贯通; 关键词: 纳米孔洞 分子动力学 冲击加载 贯通  相似文献   

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