Quality improvement of single-walled carbon nanotubes by doping B in Fe/MgO catalyst

We demonstrate that the quality of the as-grown single-walled carbon nanotubes (SWCNTs) can be effectively improved by the addition of the B ingredient in the Fe/MgO catalyst. The as-grown SWCNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The SWCNTs prepared by the pure Fe/MgO catalyst have relatively low graphite crystallinity and are coated by much amorphous carbon. The intensity ratio of the D- and G-bands (I_D/I_G) in Raman spectra is relatively high (0.098 for laser 532 nm and 0.075 for laser 785 nm). The SWCNTs grown from the Fe/MgO catalyst doped with 0.1 part of B have more regular graphite structure with little amorphous carbon. The I_D/I_G values reduced remarkably (0.041 for laser 532 nm and 0.040 for laser 785 nm). The effect would be attributed to the inhibitory action of the doped B on the formation of radical hydrocarbon species for the formation of SWCNTs.     

Pulsed KrF-laser synthesis of single-wall-carbon-nanotubes: effects of catalyst content and furnace temperature on their nanostructure and photoluminescence properties

In this article, we report on the use of a pulsed KrF-laser (248 nm, 20 ns) for the synthesis of single wall carbon nanotubes (SWCNTs) from the ablation of a graphite target loaded with Co/Ni catalyst, under various growth conditions. By varying the Co/Ni catalyst load of the graphite target, from 0 to 2.4 at.%, the laser synthesized SWCNTs, under a furnace temperature (T _f) of 1,100 °C, were found to be decorated by C₆₀ buckyballs, of which the density decreases as the catalyst content is increased. The effect of the catalyst content of the laser-ablated graphite target on the produced carbon nanostructures (C₆₀ vs. SWCNTs) was systematically investigated by means of various characterization techniques, including Raman spectroscopy, thermogravimetry, and SEM/HR-TEM microscopies. A [Co/Ni] ≥ 1.2 at.% was identified as the optimal concentration for the production of SWCNTs without any detectable presence of C₆₀ buckyballs. Thus, under the optimal growth conditions (i.e., [Co/Ni] = 1.2 at.% and T _f = 1,100 °C), the produced SWCNTs were found to be characterized by a very narrow diameter distribution (centered on 1.2 nm) with lengths in excess of 10 μm. By increasing T _f from 900 to 1,150 °C, the diameter of the SWCNTs can be varied from ~0.9 to ~1.3 nm. This nanotube diameter variation was evidenced by Raman and UV–Vis absorption measurements, and its effect on the photoluminescence of the SWCNTs is presented and discussed.     

A study of the effect of different catalysts for the efficient CVD growth of carbon nanotubes on silicon substrates

We report on the identification of efficient combinations of catalyst, carbon feedstock, and temperature for the ethanol chemical vapour deposition (CVD) growth of single-wall carbon nanotubes (SWCNTs) onto silicon substrates.Different catalyst preparations, based on organometallic salts (Co, Fe, Mo, Ni acetate, and bimetallic mixtures), have been spin coated onto thermally grown silicon dioxide on silicon chips to perform tests in a temperature range between 500 and 900 °C.The samples have been then characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. Assuming the growth of high-quality isolated nanotubes as target, the ratio in Raman spectra between the intensity of the G peak and of the D peak has been used as the main parameter to evaluate the performance of the catalytic process. A comparison made for both single metals and bimetallic mixtures points out best conditions to achieve efficient CVD growth of SWCNTs.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Vertically aligned carbon nanotubes from natural precursors by spray pyrolysis method and their field electron emission properties

Vertically aligned carbon nanotubes have been synthesized from botanical hydrocarbons: Turpentine oil and Eucalyptus oil on Si(100) substrate using Fe catalyst by simple spray pyrolysis method at 700°C and at atmospheric pressure. The as-grown carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), thermogravimetric analysis (TGA), differential thermal analysis (DTA), and Raman spectroscopy. It was observed that nanotubes grown from turpentine oil have better degree of graphitization and field emission performance than eucalyptus oil grown carbon nanotubes. The turpentine oil and eucalyptus oil grown carbon nanotubes indicated that the turn-on field of about 1.7 and 1.93 V/μm, respectively, at 10 μA/cm². The threshold field was observed to be about 2.13 and 2.9 V/μm at 1 mA/cm² of nanotubes grown from turpentine oil and eucalyptus oil respectively. Moreover, turpentine oil grown carbon nanotubes show higher current density in relative to eucalyptus oil grown carbon nanotubes. The maximum current density of 15.3 mA/cm² was obtained for ∼3 V/μm corresponding to the nanotubes grown from turpentine oil. The improved field emission performance was attributed to the enhanced crystallinity, fewer defects, and greater length of turpentine oil grown carbon nanotubes.     

Effective, fast, and low temperature encapsulation of fullerene derivatives in single wall carbon nanotubes

High filling of single wall nanotubes (SWCNTs) with the typical exohedrally functionalized fullerene derivative of C₆₀N-methyl-3,4-fulleropyrrolidine C₆₀-C₃NH₇ is reported at the temperature of refluxing hexane. The new peapod material is characterized by STM (scanning tunneling microscopy), TEM (transmission electron microscopy) and Raman spectroscopy. Atomically resolved STM scans on SWCNT show no excessive defects or sidewall functionalization as a result of this treatment. The radial breathing mode (RBM) mode of SWCNT at 165 cm⁻¹ becomes weaker and shifted to 169 cm⁻¹ indicating filled nanotubes. TEM studies show bundles of SWCNT are highly filled with derivative C₆₀-C₃NH₇ and form the (C₆₀-C₃NH₇)_n peapods. Individual pyrrolidine-type functional groups attached to the fullerene cages are unambiguously visualized by a lower-dose observation.     

Raman spectroscopy of SWNTs produced by a XeCl excimer laser ablation at high temperatures

Synthesis of single-wall carbon nanotubes (SWNTs) was carried out by an ablation method using a XeCl excimer laser. It was irradiated onto a graphite target containing Co and Ni at the temperatures of 1073, 1173, 1273, 1373, 1473, 1523 and 1623 K under the atmosphere (0.1 MPa) of Ar gas with the flow rate of 12 ml/min. The measurement by a scanning/transmission electron microscope and Raman spectroscopy found the formation of SWNTs with the diameter of about 1.3 nm and the length of about 2 μm in ablated carbonaceous soot. The ratio of peak intensity of 1590 cm⁻¹ (G band) to that of 1335 cm⁻¹ (D band) in the high frequency Raman spectra increased with increasing the ambient temperature. The radial breathing mode (RBM) in the low frequency Raman spectra shows that the mean diameter of SWNTs increased with increasing the ambient temperature.     

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al_0.45Ga_0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 × 10¹³ cm⁻² and high electron mobility of 1346 cm² V⁻¹ s⁻¹ were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Ω/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances.     

Selective growth, characterization, and field emission performance of single-walled and few-walled carbon nanotubes by plasma enhanced chemical vapor deposition

Single-walled carbon nanotubes (SWCNTs) and few-walled carbon nanotubes (FWCNTs) have been selectively synthesized by plasma enhanced chemical vapor deposition at a relative low temperature (550 °C) by tuning the thickness of iron catalyst. The parametric study and the optimization of the nanotube growth were undertaken by varying inductive power, temperature, catalyst thickness, and plasma to substrate distance. When an iron film of 3-5 nm represented the catalyst thickness for growing FWCNT arrays, SWCNTs were synthesized by decreasing the catalyst thickness to 1 nm. The nanotubes were characterized by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Electron field emission properties of the nanotubes indicate that the SWCNTs exhibit lower turn-on field compared to the FWCNTs, implying better field emission performance.     

Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

Growth of single wall carbon nanotubes using PECVD technique: An efficient chemiresistor gas sensor

In this work, the uniform and vertically aligned single wall carbon nanotubes (SWCNTs) have been grown on Iron (Fe) deposited Silicon (Si) substrate by plasma enhanced chemical vapor deposition (PECVD) technique at very low temperature of 550 °C. The as-grown samples of SWCNTS were characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM) and Raman spectrometer. SWCNT based chemiresistor gas sensing device was fabricated by making the proper gold contacts on the as-grown SWCNTs. The electrical conductance and sensor response of grown SWCNTs have been investigated. The fabricated SWCNT sensor was exposed to ammonia (NH₃) gas at 200 ppm in a self assembled apparatus. The sensor response was measured at room temperature which was discussed in terms of adsorption of NH₃ gas molecules on the surface of SWCNTs. The achieved results are used to develope a miniaturized gas sensor device for monitoring and control of environment pollutants.     

Growth of single-walled carbon nanotubes on silicon nanowires

Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.     

Synthesis and optical properties of Co-doped ZnO nanofibers prepared by electrospinning

In this work, Co-doped ZnO nanofibers have been fabricated successfully by an electrospinning technique. The as-prepared nanofibers are characterized by themogravimetric analysis (TG), scanning electron microscopy (SEM), transmission electron microscopy (TEM), powder X-ray diffraction (XRD), Raman spectra and photoluminescence spectroscopy (PL). Results have showed that a wurtzite ZnO nanofibers were obtained and the PL spectrum showed a red-shift by 10 nm due to narrowing of the ZnO band gap (∼3.29 eV) as a result of Co doping. Meanwhile, Raman scattering spectra exhibited an unusual peak at 540 cm⁻¹.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

The effect of sub-band gap photon illumination on the properties of GaN layers grown on Si(111) by MBE

Nanostructured GaN layers are fabricated by laser-induced etching processes based on heterostructure of n-type GaN/AlN/Si grown on n-type Si(111) substrate. The effect of varying laser power density on the morphology of GaN nanostructure layer is observed. The formation of pores over the structure varies in size and shape. The etched samples exhibit dramatic increase in photoluminescence intensity compared to the as-grown samples. The Raman spectra also display strong band at 522 cm⁻¹ for the Si(111) substrate and a small band at 301 cm⁻¹ because of the acoustic phonons of Si. Two Raman active optical phonons are assigned h-GaN at 139 and 568 cm⁻¹ due to E2 (low) and E2 (high), respectively. Surface morphology and structural properties of nanostructures are characterized using scanning electron microscopy and X-ray diffraction. Photoluminance measurement is also taken at room temperature by using He–Cd laser (λ = 325 nm). Raman scattering is investigated using Ar⁺ Laser (λ = 514 nm).     

Growth of multiwalled carbon nanotubes from acetylene over in situ formed Co nanoparticles on MgO support

The performance of Co catalysts supported on MgO at different Co loading (10%-75%) for the formation of carbon nanotubes through acetylene decomposition at 600 ^°C with H₂/C₂H₂ mixture for 1 h is investigated. The yield of MWNTs increases with an increase in Co loading (up to 50%). Starting from 1 g of catalyst precursor, about 8 g of MWNTs was obtained. The XRD patterns of catalyst precursor indicate the presence of cobalt in oxidic phase that eventually transformed into the catalytically active Co nanoparticles (12-18 nm) under the influence of acetylene and was responsible for the growth of coiled-like multi-walled CNTs as revealed by SEM and HRTEM images. It is suggested that bending in coil shaped MWNTs has the potential for functionalization for its biomedical applications.     

Green luminescence from triphenylphosphine functionalized single-wall carbon nanotubes

In a simple wet chemical process, purified single-wall carbon nanotubes (SWCNTs) are treated with triphenylphosphine (Ph₃P) at room temperature. The functionalized material is characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy. HRTEM micrograph clearly reveals that triphenylphosphine nanocrystals of nearly uniform size are attached to the surfaces of SWCNTs. The hybrid structure shows remarkable green luminescence with peak emission at around 500 nm, under UV excitation. The photoluminescence may be attributed to charge transfer from the electron-donating phosphorous atoms to the carbon nanotubes.     

Synthesis of single-walled carbon nanotubes in an expanding vapor-gas flow produced by laser ablation of a graphite-catalyst mixture

Single-walled carbon nanotubes (SWCNTs) are synthesized by the ablation of a catalyst-containing carbon target with a cw CO₂ laser. Emphasis is on ablation conditions that are favorable to self-organized SWCNT synthesis. It is shown that the graphite target intensely evaporates with the formation of fractal-like tubes at the edge of the jet when the laser power density exceeds 10⁵ W/cm². Still more favorable conditions for carbon nanotube synthesis are set if the power density lies within 2×10⁴–5×10⁴ W/cm². Under these conditions, both individual SWCNTs and their bundles of diameter from 1.1 to 1.5 nm are produced, as shown by Raman scattering and electron microscopy studies. In this series of experiments, the maximal fraction of SWCNTs reaches 20%. A mechanism of SWCNT fast growth in the laser torch is suggested.     

Raman spectroscopy of RuSr2(Eu1.5Ce0.5)Cu2O10 magneto-superconductor

Raman spectroscopy studies are reported for the RuSr₂Eu_1.5Ce_0.5Cu₂O₁₀ (Ru-1222) compound at various temperatures of 300, 250, 200 and 90 K. Three distinct vibrational bands: the first at 110, 140, and 160 cm⁻¹, the second at 295 and 347 cm⁻¹, and third one at 651 cm⁻¹ are seen in Raman spectra of the compound at room temperature. These bands are attached to the Cu atoms’ c-direction, the Ru atoms’ ab-plane stretching and Ru atoms’ c-direction anti-stretching modes. Below 200 K, an extra vibrational mode is also seen at 260 cm⁻¹. Also, with a decrease in temperature, though the Cu vibrational modes remain intact, the Ru atoms’ ab-plane stretching (295 cm⁻¹) and c-direction anti-stretching (651 cm⁻¹) modes shift gradually to higher wave number positions. The frequencies of modes at 260 and 651 cm⁻¹ showed anomalous softening and line-width broadening below 100 K that corroborates well with the spin ordering seen in susceptibility studies. The studied compound is a ferromagnetic superconductor with magnetic ordering of the Ru spins at 200 K and superconductivity below 30 K. A magnetic and electrical transport characterization of the compound is also presented briefly.     

Effect of adding W to Fe catalyst on the synthesis of SWCNTs by arc discharge

Combining iron (Fe) and tungsten (W) as a bimetallic catalyst, we synthesized high-yield single-wall carbon nanotubes (SWCNTs) of narrow diameter distribution by a hydrogen–argon arc discharge method. Raman spectra indicate that the diameters of SWCNTs prepared using the Fe–W catalysts are about 0.5 nm smaller than those using Fe catalyst alone. The transmission electron microscopy and X-ray diffraction studies show that the SWCNTs prepared by the bimetallic catalyst coexist with few graphite flakes and other amorphous carbon. At the W content of 2–4 at%, tungsten cannot be found in the SWCNT samples. Thus by using a simple two-step purification process, high-purity SWCNT samples can be obtained. We have demonstrated the growth mechanism for the high melting metal (such as W, Mo)–Fe catalyst synthesis of SWCNTs by the arc discharge method.