Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure |
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Authors: | Cuimei Wang Guoxin Hu Junxi Wang Jianping Li Zhanguo Wang |
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Institution: | Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, PR China |
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Abstract: | Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 × 1013 cm−2 and high electron mobility of 1346 cm2 V−1 s−1 were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Ω/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. |
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Keywords: | 68 55 Jk 81 15 Gh 81 05 Ea 72 80 Ey 85 30 Tv |
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