First-principles band-structure calculations as a tool for the quantitative interpretation of Raman spectra of high temperature superconductors

We have performed first-principles band structure calculations in order to investigate vibronic and optical properties of YBa₂Cu₃O₇. A formalism describing temperature dependent Raman spectra from such ab-initio results has been applied to the 500 cm^?1 apex oxygen mode and its overtone in good agreement with experimental results. The dynamical matrix of the five A_1g modes established by atomic-force calculations is studied in detail showing rather good agreement with experimental eigen-frequencies and normal coordinates. The effect of isotope substitutions on the phonon frequencies is investigated. We demonstrate that the calculated vibronic properties of high T_c materials are improved by applying a generalized gradient correction scheme for the treatment of exchange and correlation effects instead of the local-density approximation.     

Linear and nonlinear optical properties of 3-nitroaniline (m-NA) and 4-nitroaniline (p-NA) crystals: A DFT/TDDFT study

We have studied the electronic structure and optical responses of 3-nitroaniline and 4-nitroaniline crystals within the framework of density functional theory (DFT). In addition, the excitonic effects are investigated by using the recently published bootstrap exchange-correlation kernel within the time dependent density functional theory (TDDFT) framework. Our calculations based on mBJ approximation yield the indirect band gap for both crystals, but the larger one for m-NA. Due to the excitonic effects, the TDDFT calculations gives rise to the enhanced and red-shifted spectra (compared to RPA). Due to the weak intermolecular interactions, band-structure calculations yield bands with low dispersion for both crystals. This study shows that the substituent groups play an important role in the top of valence band and the bottom of conduction band. Due to the linear structure of p-NA molecule, the highest peaks are located in the optical spectra of p-NA crystal, while m-NA has more sharp peaks, especially at lower energies. Both DFT and TDDFT calculations for the energy loss spectra show plasmon peaks around 27 and 28 eV for p-NA and m-NA, respectively. Due to the non-centrosymmetric structure of m-NA crystal, we also have reported its nonlinear spectra and the 2ω/ω intra-band and inter-band contributions to the dominant susceptibilities. Findings indicate the opposite signs for these contributions, especially at higher energies. The comparison between nonlinear spectra and the linear spectra (as a function of both ω and 2ω) reveals the significant resemblance between linear and nonlinear patterns. In addition to the reasonable agreement between our results with experimental data, this study reveals the spectral similarities between crystalline susceptibility and molecular polarizability.     

Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films

Al doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873 K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E₂ mode and longitudinal optical A₁ (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of ∼75% in the visible and near infrared region and low dc electrical resistivity of 5.94 × 10⁻⁶ Ω m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film.     

Electric field induced nonlinear optical properties of a confined exciton in a ZnO/Zn1−xMgxO strained quantum dot

Electric field induced exciton binding energy as a function of dot radius in a ZnO/Zn_1−xMg_xO quantum dot is investigated. The interband emission as a function of dot radius is obtained in the presence of electric field strength. The Stark effect on the exciton as a function of the dot radius is discussed. The effects of strain, including the hydrostatic and the biaxial strain and the internal electric field, induced by spontaneous and piezoelectric polarization are taken into consideration in all the calculations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Some nonlinear optical properties are investigated for various electric field strengths in a ZnO/Zn_1−xMg_xO quantum dot taking into account the strain-induced piezoelectric effects. Our results show that the nonlinear optical properties strongly depend on the effects of electric field strength and the geometrical confinement.     

Interband optical absorption in a strained CdxZn1−xO/ZnO quantum dot

Numerical calculations of the excitonic absorption spectra in a strained Cd_xZn_1−xO/ZnO quantum dot are investigated for various Cd contents. We calculate the quantized energies of the exciton as a function of dot radius for various confinement potentials and thereby the interband emission energy is computed considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption as a function of photon energy for different dot radii is discussed. Decrease of exciton binding energy and the corresponding optical band gap with the Cd concentration imply that the confinement of carriers decreases with composition x. The main results show that the confined energies and the transition energies between the excited levels are significant for smaller dots. Non-linearity band gap with the increase in Cd content is observed for smaller dots in the strong confinement region and the magnitude of the absorption spectra increases for the transitions between the higher excited levels.     

First-principles study of electronic structure and optical properties of barium strontium titanates (BaxSr1−xTiO3)

Using first-principles calculations based on density-functional theory in its local-density approximation, we investigate the energy band structures and total density of states (TDOS) of barium strontium titanates (BSTs). Direct band gaps of 1.89 and 1.87 eV at the Γ point in the Brillouin zone are calculated for Ba_xSr_1−xTiO₃ (x = 2/3 and 1/3), respectively. The optical properties of the above perovskites in the core-level spectra are investigated by the first-principles under scissor approximation. The real and imaginary parts of the complex dielectric function and derive optical constants, viz., the refractive index, extinction coefficient, reflectivity, and the electron energy-loss spectrum are calculated.     

Linear and nonlinear optical properties of luminescent ZnO nanoparticles embedded in PMMA matrix

ZnO nanoparticles embedded in the PMMA matrix were prepared by wet chemical synthesis. The optical band gap of the ZnO nanoparticles decreases with increase in NaOH concentration. The photoluminescence spectra of the ZnO colloids show strong UV, green and blue emissions. The optical absorptive nonlinearity of the ZnO:PMMA composites was analyzed using an open aperture Z-scan technique which shows optical limiting type nonlinearity due to the two photon absorption in ZnO. The efficiency of limiting is found to increase with decrease in the band gap. ZnO:PMMA shows a negative value for nonlinear refractive index n₂ and the magnitude of n₂ increases with decrease of band gap. Stability as well as the mechanical properties of the nanoparticles embedded in the PMMA matrix makes it more suitable for device fabrication as compared to the ZnO nanoparticles dispersed in solution.     

Electronic structure,ferroelectricity and optical properties of CaBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

Using first-principles calculations based on density-functional theory in its local-density approximation, we investigated the Electronic structure, ferroelectricity and optical properties of CaBi₂Ta₂O₉ (CBT) for the first time. It is found that CBT compound has an indirect band gap of 3.114 eV and the O 2s and 2p states are strongly hybridized with the 6s states of Bi which belong to the (Bi₂O₂)²⁺ planes. The quite strong Ta–O and Bi–O hybridization is the primary source for ferroelectricity. Our results imply that the interaction between Bi and O is highly covalent. The anisotropy occurs mainly above 4 eV in the optical properties. The different optical properties have been discussed.     

Geometry effects on the electronic properties of YBa2Cu3O7

We have performed electronic structure calculations for the high T _c compound YBa₂Cu₃O₇ with a 3% reduced unit-cell volume. The effect on band structure and Fermi surface is investigated. The predominant features are van Hoove singularities at the Fermi level. Keeping the experimental lattice parameters, nearly the same effects occur when replacing the local-density approximation by a generalized gradient correction scheme.     

Exciton binding energy and the optical absorption coefficient in a strained CdxZn1−xO/ZnO quantum dot

Numerical calculations of the excitonic absorption spectra in a strained Cd_xZn_1?xO/ZnO quantum dot are investigated for various Cd contents. We calculate the quantized energies of the exciton as a function of dot radius for various confinement potentials and thereby the interband emission energy is computed considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption as a function of photon energy for different dot radii is discussed. Decrease of exciton binding energy and the corresponding optical band gap with the Cd concentration imply that the confinement of carriers decreases with composition x. The main results show that the confined energies and the transition energies between the excited levels are significant for smaller dots. Non-linearity band gap with the increase in Cd content is observed for smaller dots in the strong confinement region and the magnitude of the absorption spectra increases for the transitions between the higher excited levels.     

First-principles study on the electronic and optical properties of Si and Al co-doped zinc oxide for solar cell devices

Electronic and optical properties of co-doped zinc oxide ZnO with silicon (Si) and aluminum (Al), in Zn_1?2x Si _x Al _x O (0 ≤ x ≤ 0.0625) original structure forms, are investigated by the first-principles calculations based on the density functional theory (DFT). The optical constants and dielectric functions are investigated with the full-potential linearized augmented plane wave (FP-LAPW) method and the generalized gradient approximation (GGA) by WIEN2k package. The complex dielectric functions, refractive index and band gap of the pure as well as doped and co-doped ZnO were investigated, which are in good agreement with the available experimental results for the undoped ZnO. Thus, the maximum optical transmittance of the co-doped ZnO of about 95 % was achieved; it is higher than that of pure ZnO. Thus, we showed for the Si–Al co-doped ZnO with x = 0.0315 that the optical transmittance can cover a larger range in the visible light region. In addition, an occurrence of important energy levels around Fermi levels was showed, which is mainly due to doping atoms that lead to an overlap between valence and conduction bands, and consequently to the significant conductor behavior of the Si–Al co-doped ZnO. The original Zn_1?2x Si _x Al _x O structure reveals promising optical and electronic properties, and it can be investigated as good candidates for practical uses as transparent and conducting electrodes in solar cell devices.     

Disorder driven optical processes in nanocrystalline ZnO

A systematic study on the modification of optical properties in mechanically milled ZnO powder has been reported here. The average grain size of the powder becomes ～20 nm within 4 h of milling. Fluctuations of average grain size have been noticed at the initial stage of milling (within 15 min). Changes in grain morphology with milling have also been noticed in scanning electron micrographs of the samples. Room temperature optical absorption data shows a systematic red shift of absorption band edge (～3.25 eV). The band tail parameter (extracted from the optical absorption just below the band edge) follows a simple exponential relation with the inverse of the average grain size. Significant increase of the band tail parameter has been noticed at low grain size regime. It has been analyzed that high values of band tail parameter is a representative of V_Zn–V_O type divacancy clusters. Room temperature photoluminescence spectra show decrease (except for 120 min milling) of band edge emission intensity with increase of milling time. Subsequent decrease of sub-band edge emission is, however, less prominent. The variation of PL intensity ratio (intensity at band edge peak with that at 2.3 eV) follows simple exponential decrease with the increase of band tail parameter. This indeed shows that band edge emission in ZnO is related with the overall disorder in the system, not grain size induced only.     

Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Zinc oxide doped with Al (AZO) thin films were prepared on borosilicate glass substrates by dip and dry technique using sodium zincate bath. Effects of doping on the structural and optical properties of ZnO film were investigated by XRD, EPMA, AFM, optical transmittance, PL and Raman spectroscopy. The band gap for ZnO:Al (5.0 at. wt.%) film was found to be 3.29 eV compared with 3.25 eV band gap for pure ZnO film. Doping with Al introduces aggregation of crystallites to form micro-size clusters affecting the smoothness of the film surface. Al³⁺ ion was found to promote chemisorption of oxygen into the film, which in turn affects the roughness of the sample. Six photoluminescence bands were observed at 390, 419, 449, 480, 525 and 574 nm in the emission spectra. Excitation spectra of ZnO film showed bands at 200, 217, 232 and 328 nm, whereas bands at 200, 235, 257 and 267 nm were observed for ZnO:Al film. On the basis of transitions from conduction band or deep donors (CB, Zn_i or V_OZn_i) to valence band and/or deep acceptor states (VB, V_Zn or O_i or O_Zn), a tentative model has been proposed to explain the PL spectra. Doping with Al³⁺ ions reduced the polar character of the film. This has been confirmed from laser Raman studies.     

Electronic and magnetic properties of Mn-doped ZnO: Total-energy calculations

Based on the spin generalized gradient approximation (σGGA) of the density functional theory (DFT), the structural, magnetic, and electronic properties of Mn-doped ZnO structure have thoroughly been investigated. It is found that the Mn atom prefers to substitute one of the Zn atoms, producing the energetically most stable configuration for the Mn-doped ZnO structure. Employing the Hubbard potential within the calculations suggests various changes and modifications to the structural, magnetic and electronic properties of the Mn-doped ZnO. Our calculations reveal that the local magnetic moment at the Mn site using the ordinary σGGA functional is 4.84 μ_B/Mn, which is smaller than that evaluated by including the Hubbard potential of 5.04 μ_B/Mn. Overall, the electronic band structure of the system, within the σGGA+U, is half-metallic, with metallic nature for the majority state and semiconducting nature for the minority state. Simulated scanning tunneling microscopy (STM) images for both unoccupied and occupied states indicate siginficant brightness on both Zn and Mn atoms and much brighter protrusions around the O atoms, respectively.     

Effect of Ce and Cu co-doping on the structural,morphological, and optical properties of ZnO nanocrystals and first principle investigation of their stability and magnetic properties

Ce, Cu co-doped ZnO (Zn_1−2xCe_xCu_xO: x=0.00, 0.01, 0.02, 0.03, 0.04 and 0.05) nanocrystals were synthesized by a microwave combustion method. These nanocrystals were investigated by using X-ray diffraction (XRD), UV–visible diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), and vibrating sample magnetometer (VSM). The stability and magnetic properties of Ce and Cu co-doped ZnO were probed by first principle calculations. XRD results revealed that all the compositions are single crystalline. hexagonal wurtzite structure. The optical band gap of pure ZnO was found to be 3.22 eV, and it decreased from 3.15 to 3.10 eV with an increase in the concentration of Cu and Ce content. The morphologies of Ce and Cu co-doped ZnO samples confirmed the formation of nanocrystals with an average grain size ranging from 70 to 150 nm. The magnetization measurement results affirmed the antiferro and ferromagnetic state for Ce and Cu co-doped ZnO samples and this is in agreement with the first principles theoretical calculations.     

Common electronic band gaps and similar optical properties of ZnO nanotubes

Electronic and optical properties of single-walled zinc oxide （ZnO） nanotubes are investigated from the firstprinciples calculations. Electronic structure calculations show that ZnO nanotubes are all direct band gap semiconducting nanotubes and the band gaps are relatively insensitive to the diameter and chirality of tubes. The origin of the common electronic band gaps of ZnO nanotubes is explained in terms of band-folding from the two-dimensional band structure of graphite-like sheet. Moreover, the optical properties such as dielectric function and energy loss function spectra of different ZnO nanotubes are very similar, relatively independent of diameter and chirality of tubes. The calculated dielectric function and loss function spectra show a moderate optical anisotropy with respect to light polarization.     

Magnetic and optical properties of Cu-doped ZnO nanosheet: First-principles calculations

We performed first-principles calculations within density-functional theory to study the magnetic and optical properties of Cu-doped ZnO nanosheet (NS). We found that Cu atom prefers to substitute for Zn site and can induce a local magnetic moment of 1.00 μ_B per unit in ZnO NS. When two Zn atoms are substituted by two Cu dopants, they tend to form a cluster and ferromagnetic (FM) ordering becomes energetically more favorable. In addition, localized states appear within the band gap due to the introduction of Cu dopant to ZnO NS. With increasing Cu concentrations, both the imaginary part of dielectric function and the absorption spectrum exhibit a red-shift behavior, which are in good agreement with the recent experimental results. The ferromagnetic coupling can be attributed to the p–d hybridization mechanism. The intriguing properties of Cu-doped ZnO NS may be promising for designing novel multifunctional nanodevice.     

First-principles calculations of the structural, electronic and optical properties of cubic BxGa1−xAs alloys

Density functional calculations are performed to study the structural, electronic and optical properties of technologically important B_xGa_1−xAs ternary alloys. The calculations are based on the total-energy calculations within the full-potential augmented plane-wave (FP-LAPW) method. For exchange-correlation potential, local density approximation (LDA) and the generalized gradient approximation (GGA) have been used. The structural properties, including lattice constants, bulk modulus and their pressure derivatives, are in very good agreement with the available experimental and theoretical data. The electronic band structure, density of states for the binary compounds and their ternary alloys are given. The dielectric function and the refractive index are also calculated using different models. The obtained results compare very well with previous calculations and experimental measurements.     

Electronic structure of a thermoelectric material: CsBi4Te6

We have calculated the electronic structure of CsBi₄Te₆ by means of first-principles self-consistent total-energy calculations within the local-density approximation using the full-potential linear-muffin-tin-orbital method. From our calculated electronic structure we have calculated the frequency dependent dielectric function. Our calculations shows that CsBi₄Te₆ a semiconductor with a band gap of 0.3 eV. The calculated dielectric function is very anisotropic. Our calculated density of state support the recent experiment of Chung et al. [Science 287 (2000) 1024] that CsBi₄Te₆ is a high performance thermoelectric material for low temperature applications.