A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers

Zn_1−xMn_xS epilayers were grown on GaAs (1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, (E) = ₁(E) + i₂(E), such as E₀, E₀ + Δ₀, and E₁, and three E₂ (Σ, Δ, Γ) structures at a lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The observation of new peaks, as well as the shifting and broadening of the critical points of Zn_1−xMn_xS epilayers, were investigated as a function of Mn composition by ellipsometric measurements for the first time. The characteristics of the peaks changed with increasing Mn composition. In particular, four new peaks were observed between 4.0 and 8.0 eV for Zn_1−xMn_xS epilayers, and their characteristics were investigated in this study.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

Normal-state transport properties of Ba1−xKxBiO3 crystals

The normal-state transport properties of Ba_1−xK_xBiO₃ crystals with a wide range of potassium compositions (0≤x≤0.62) were studied. Although the host material BaBiO₃ has a monoclinic structure, the system changes from a monoclinic to an orthorhombic structure with a small doping of potassium (0≤x<0.35) and behaves similar to a doped semiconductor, without exhibiting superconductivity. In the composition range, holes are majority carriers in the transport phenomena. When x exceeds a critical value (0.35), the system goes into a cubic superconducting phase with a single metallic band. The vicinity of the critical composition transport phenomena is easy to understand assuming the existence of two conducting channels that are made up of metallic and semiconducting phases. Maximum T_c exceeding 30 K was observed at x0.4, where carrier density was at its maximum. Overdoping with potassium suppresses superconductivity. In the metallic composition of x>0.45, transport seems to correlate with the phonon mode with an energy distribution of 15–43 meV.     

Ferromagnetic Zr1−xMnxCo2 laves phase compounds

Structure and magnetic properties of the Zr_1−xMn_xCo_2+δ alloys were studied for 0 x <0.7, δ=0, 0.45. The cubic C15 Laves phase structure shows Mn solubility up to x≈0.4. The other Laves phase with the hexagonal C36 structure found for x0.5 apparently has a small region of Mn solubility in the vicinity of Zr_0.4Mn_0.6Co₂. Though the parent Mn-free compounds are known to be paramagnetic, the Mn-substituted alloys show ferromagnetic behavior with the Curie temperatures up to 625 K and the room-temperature saturation magnetization of about 100 emu/g. The onset of ferromagnetism with the Mn substitution for Zr may be caused by polarization of itinerant 3d electrons, like it was earlier supposed for the off-stoichiometric ZrCo_2+δ. The universal composition dependencies of the intrinsic magnetic properties for different δ can be obtained, if plotted against the amount of zirconium atoms missing in its sublattice. The room-temperature anisotropy with the noticeable anisotropy field of 24 kOe and the 1 1 0 easy magnetization direction laying in a basal plane was found in the hexagonal Zr_0.5Mn_0.5Co₂.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Ca1−xYxMnO3 manganites: synthesis and ESR characterization

Ceramic samples of Ca_1−xY_xMnO₃ were synthesized by a liquid-mix method obtaining single phase materials, for 0.1x1, with orthorhombic structure. The cell volume increases with x indicating that changes in the Mn electronic state overcomes the progressive diminishing of the (Ca, Y) cationic radius, r_Ca>r_Y. We observed a continuous broadening of the electronic spin resonance line width with x. This is explained in terms of the increasing orthorhombic distortions. We have measured the DC magnetization for the x=1 compound YMnO₃. Our results are compatible with a G-type antiferromagnet with T_N=44 K.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

Thermodynamic analysis of BaxK1 − xBiO3 using the Eliashberg theory

In order to understand the mechanism that gives rise to superconductivity in the ceramic superconductors of the type Ba_xK_{1 − x}BiO₃, we analyze the thermodynamic properties with the use of the Eliashberg equations. For these calculations we used the electron-phonon spectral density function ²(ω)F(ω), calculated by Shirai et al. [1] from first principles for two different K concentrations, x=0.5 and x=0.7.     

Resistivity and thermoelectric power of Bi2Sr2Ca−xPrxCu2Oy system

Samples of Bi₂Sr₂Ca_1−xPr_xCu₂O_y have been characterized by resistivity and thermoelectric power measurements. All metallic samples show superconductivity with a maximum T_c = 90 K at X = 0.2. The sample of x = 0.6 shows a crossover from hopping conduction at low temperature above T_c to metallic conduction at high temperature. For the metallic samples below x = 0.6, the results of thermoelectric power are well fitted by both of a phenomenological band spectrum model and the Nagaosa and Lee model.     

Charge ordering in the electron doped Ca1−xYxMnO3 manganites

Structural studies on the electron doped Ca_1−xY_xMnO₃ are presented. At 300 K, orthorhombic O-phase was observed in all cases, associated to low electric resistivity and high Curie–Weiss temperature. For samples with x>0.07, structural phase transitions to more distorted orthorhombic and monoclinic phases were found at T<170K. In these phases only weak ferromagnetic interactions were observed.     

Very strong interlayer exchange coupling in epitaxial Fe/Fe1−xSix/Fe trilayers (x=0.4–1.0)

Fe/Fe_1−xSi_x/Fe (x=0.4–1.0) wedge-type epitaxial trilayers with improved homogeneity are grown by co-evaporation from two electron-beam sources. The coupling strengths of the bilinear (J₁) and biquadratic (J₂) coupling terms are derived from Brillouin light scattering (BLS) spectra and longitudinal MOKE hysteresis loops. The total coupling strength J=J₁+J₂ increases dramatically with increasing x and reaches values in excess of 6 mJ/m².     

Positive linear magnetoresistance in Fex–C1−x composites

A large positive magnetoresistance (MR) has been found in micro-sized Fe_x–C_1−x composites. At a magnetic field of 5 T, the Fe_0.2–C_0.8 composite has the largest MR, 53.8% and 190% at room temperature and at 5 K, respectively. The magnetic field dependence of the MR can be described approximately as MR∝Bⁿ, and the value of exponent n is determined by the Fe weight concentration and temperature, ranging from 1/4 to 6/4. It appears that Fe_x–C_1−x has a linear field dependence of the positive MR at different temperatures. The possible mechanism for the positive MR is discussed.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-Ge_xSi_1−xO_y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10⁻¹¹ that can be used for further design and modeling.     

Higher-order elastic constants of La1.84Sr0.16CuO4 high-temperature superconductor

Finite deformation theory is used to obtain the strain energy density of a tetragonal 2–1–4-type single crystal of the high-temperature superconductor La_2−xSr_xCuO₄. The complete set of second and third-order elastic constants of the high-temperature superconductor La_2−xSr_xCuO₄ (x = 0.16) is calculated by taking into account the interactions between nine nearest-neighbour atoms in the lattice and using Mie–Grüneisen interatomic potential. For the sake of comparison we have also computed the values of these constants for x = 0.13–0.20. The values of third-order elastic constants of La_2−xSr_xCuO₄ (x = 0.13–0.20) are negative and their absolute magnitudes are one order higher than those of the second-order elastic constants.     

Oxygen overdoping in superconducting and non-superconducting Y1−xPrxBa2Cu3Oy

We present the evolution of magnetic and structural properties of Y_1−xPr_xBa₂Cu₃O_y (x0.5 and x=1) single crystals and polycrystalline materials when the oxygen concentration y is varied from under- to overdoping. We have found a monotonous evolution of the Pr Néel temperature for x=1 samples and a maximum of the superconducting critical temperature for the x0.5 samples. The structural properties as detected by X-ray diffraction and Raman spectroscopy show no instabilities when crossing the optimal doping region as was found in the x=0 material.     

Localized canting of spins structure in the spinel oxide system: ZnzTizFe2−x−zCrx−zCoO4

The spinel oxide system Zn_zTi_zFe_2−x−zCr_x−zCoO₄; z=x²; x=0.60, 0.65, 0.70 and 0.80, was studied using neutron diffraction technique, low field DC magnetization measurements (ZFC–FC measurements), magnetic hysterisis, Mössbauer spectroscopy and low field AC susceptibility measurements. All the compositions show significantly less B-site magnetic moments at 10 K temperature derived from neutron diffraction data than the free ions site moments deduced assuming collinear arrangement of spins. This combined with some other features seen in the low temperature neutron diffraction patterns suggest localized canting of spins (LCS) type of magnetic ordering in the present system where a long range order of longitudinal component of moments co-exists along with totally disordered transverse component of moments. The conclusion is also supported by the features seen in the other measurements. The magnetic moments derived from 10 K neutron diffraction data are explained using the LCS approach for different exchange integrals ratios.