BaZr(BO3)2:Eu的合成及发光性能研究

用硝酸盐热分解法成功制备了BaZr(BO₃)₂:Eu(Eu³⁺的掺杂量为摩尔分数5％)荧光材料，并研究了其在254及147nm光束激发下的发光特性.254nm光束激发下的发射主峰位于612nm处，归属于Eu³⁺的⁵D₀—⁷F₂的电偶极跃迁，但在147nm光束激发下的发射主峰位于592nm处，归属于Eu³⁺的相似文献   

银催化合成Tb(BO2)3纳米棒

采用固相反应银作催化剂成功合成出棒状结构的稀土硼酸盐Tb(BO₂)₃发光材料. 利用X射线衍射和区域电子衍射研究了产物的结构特性,在700 oC煅烧时,Tb(BO₂)₃纳米棒具有良好晶形. 透射电镜分析表明,Tb(BO₂)₃纳米棒直径为100～200 nm,厚度为30～50 nm,长约3 μm. 基于Ag纳米颗粒附在Tb(BO₂)₃纳米棒的顶端和中部的事实,探讨了Tb(BO₂)₃纳米棒的生长机理. 荧光光谱研究表明,在369 nm紫外光激发下,Tb(BO₂)₃能发出Tb³⁺的特征绿色荧光,发射主峰位于546 nm,归属于⁵D₄→⁷F₅跃迁. 同时,也探讨了煅烧温度对产物的结构、形貌以及发光性质的影响.     

Sr2CeO4电荷迁移发光的光谱结构规律研究

利用高温固相反应法分别合成了不同物相形成机理的Sr₂CeO₄，Sr ₂CeO₄∶Ca ²⁺和Sr₂CeO₄∶Ba²⁺样品，并对其光谱特性进行 了研究.结果发现，对于由SrO和CeO₂直接反应生成的Sr₂CeO₄(Ⅰ)，激发主峰位于256nm 左右；而对于SrCeO₃和SrO反应生成的Sr₂CeO₄(Ⅱ)，激发主峰位于279nm左右.在Sr₂CeO₄(Ⅰ)中掺入Ca²⁺，其激发光谱随着Ca²⁺离子浓度的增加逐渐接近于Sr₂CeO_{4(Ⅱ)的激发光谱.激发主峰带应属于CeO6八面体终端Ce⁴⁺—O^2-键的电荷迁移 带.对于激发光谱中340nm左右的弱激发峰，其峰值波长不受形成机理及Ca²⁺掺杂的影响，只是其强度 随着 激发主峰的红移而增加，它可能属于CeO6八面体平面上Ce⁴⁺—O2-键的电荷 迁移带.形成机理及Ca²⁺掺杂对发射光谱没有影响.Ca²⁺在Sr 2CeO 4(Ⅱ)与Ba²⁺在Sr2CeO4(Ⅰ)和(Ⅱ)中均难 于替代Sr²⁺的位置.}     

焙烧温度对SiO2负载的Co3O4纳米粒子表面氧缺陷浓度和CO氧化催化性能的影响

以传统的浸渍法,在不同焙烧温度下制备了用于CO氧化反应的Co₃O₄/SiO₂催化剂．通过激光拉曼光谱(Raman)、X射线光电子能谱(XPS)、X射线衍射(XRD)、程序升温还原(TPR)和X射线吸收精细结构谱(XAFS)表征了该系列催化剂的结构．在所有的催化剂中,XRD和Raman光谱都只检测到了Co₃O₄晶相的存在．与Co₃O₄体相相比,XPS结果表明在200 oC焙烧的(Co₃O₄(200)/SiO₂)催化剂中Co₃O₄表面上存在着过量的Co²⁺．与XPS的结果一致,TPR结果表明Co₃O₄(200)/SiO₂催化剂中Co₃O₄表面上存在氧缺陷, 并且XAFS结果也表明Co₃O₄(200)/SiO₂催化剂中Co₃O₄具有更多的Co²⁺．提高焙烧温度使得过量的Co²⁺进一步氧化为Co³⁺,同时降低了表面氧缺陷浓度,从而得到计量比的Co₃O₄4/SiO₂催化剂．在所有的负载催化剂中Co₃O₄(200)/SiO₂催化剂表现出了最好的CO氧化催化性能,表明过量Co²⁺和表面氧缺陷的存在能够促进Co₃O₄催化CO氧化反应的活性.     

Ag-Cu纳米颗粒修饰的N掺杂TiO2纳米棒阵列及其高效光催化CO2还原应用

本文采用微纳加工方法制备了负载高密度Ag-Cu纳米颗粒的N掺杂TiO₂纳米棒阵列样品. 通过TiO₂的N掺杂,可将其吸光范围调控至与Ag纳米颗粒的等离激元吸收频率相匹配的波段,从而实现复合材料中肖特基结与共振能量转移过程的协同作用. 与此同时,Cu纳米颗粒可以为CO₂还原提供活性位点. 在全谱光照射下,复合样品光催化CO₂还原的活性显著提高,CH₄生成速率可达720 μmol·g^-1·h^-1.     

Pr3+离子单掺LiLuF4单晶的坩埚下降法生长及光谱性能研究

本文应用坩埚下降法技术在全密封铂金坩埚条件下生长了不同Pr³⁺离子掺杂浓度的高质量LiLuF₄单晶. 测定了单晶体从420 nm至500 nm的激发光谱. 在446 nm光激发下,观察到单晶体480 nm(³P₀→³H₄)蓝色发射带、522 nm(³P₁→³H₅)绿色发射及605 nm(¹D₂→³H₄)的红色发射,其对应的平均寿命分别为38.5、37.3和36.8 μs. 其荧光寿命明显大于Pr³⁺掺杂的氧化物单晶. 同时研究了激发波长和掺杂浓度对发射强度以及色度坐标的影响. 获得最佳的Pr³⁺浓度为∽0.5 mol%,并分析了环境温度从298 K 到443 K变化对荧光强度的影响. 结果表明随着温度的增加,荧光强度逐步变弱,其中³P₀→³H₄(480 nm)能级跃迁受温度影响最大,其次是³P₁→³H₅和¹D₂→³H₄.     

针状纳米MnxNi0.5-xZn0.5Fe2O4的共沉淀法制备及表征

通过在碱液中共沉淀Mn²⁺、Ni²⁺和Fe²⁺后制备了棒状的前躯体,前躯体于不同温度煅烧后制得了Mn_xNi_0:5-xZn_0:5Fe₂O₄棒状体. 利用X射线衍射仪和透射电镜对棒状体的物相、形貌及粒径进行了表征,并利用振动样品磁强计对磁性能进行研究. 结果表明长径比大于15的棒状,随着x值的增加,Mn_xNi_0:5-xZn_0:5Fe₂O₄样品的直径增加,长度下降,长径比变小,当x=0.5时其直径在50 nm左右而长径比减小到7～8. 随着x值的增加,样品的矫顽力先增加后减少,x值达到0.4时样品的矫顽力再次增加,当煅烧温度为600 oC,x=0.5时样品的矫顽力最大为134.3 Oe. 饱和磁化强度随着x值的增加先增加后减少,当煅烧温度为800 oC和x=0.2时达到最大为68.5 Oe.     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

Eu(TTFA)3掺杂SiO2杂化胶体球的合成及特性

采用改进的碱催化法和种子法分别制得了稀土配合物Eu(TTFA)₃掺杂的SiO₂杂化胶体球,并用透射电子显微镜和荧光分光光度计对其显微形貌和荧光光谱特性进行了详细地研究.结果表明,两种方法都可以获得单分散性的、稀土配合物掺杂SiO₂杂化胶体球,且都具有Eu³⁺离子典型的荧光光谱特性.Eu(TTFA)₃掺杂入SiO₂胶体球中后,有机配体TTFA在短波长处的吸收明显增强了,最大的吸收峰位也向短波长方向移动大约20～30 nm,Eu³⁺离子5D0→7F2发射跃迁仍然具有良好的窄线发光特征,同时荧光峰值的形态和位置受SiO₂基体的影响发生轻微的变化.     

Cl+HN3产生NCl(a1Δ)和NCl(b1∑)的实验研究

 对利用微波放电直接解离Cl₂生成Cl, Cl与HN₃反应生成NCl(a^1Δ )和NCl(b^1∑)的过程进行了实验研究。得到了较强的NCl(a^1Δ 和NCl(b^1∑)自发辐射光谱,考察了Cl₂流量和He/Cl₂配比对NCl(a^1Δ 和NCl(b^1∑)生成的影响。发现对于一定的He流量,Cl₂流量对NCl(a^1Δ 和NCl(b^1∑)生成的影响存在一最佳范围,而最佳He/Cl₂配比不是一定值,而是随He流量升高而变大,在实验所考察的He流量范围（5~40 L/min）内,最佳He/Cl ₂配比在30∶1~100∶1之间。     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

The optical properties of Dy-doped NaY(MoO4)2 crystal

The Dy³⁺-doped NaY(MoO₄)₂ single crystals were grown successfully by the Czochralski technique. The main spectroscopic properties (absorption, luminescence, decay curve) of Dy³⁺-doped NaY(MoO₄)₂ have been determined for both the σ and π polarizations. By using the Judd-Ofelt theory, the measured room temperature absorption spectra were applied to determine the intensity parameters, spontaneous transition probabilities, branching ratios, and radiative lifetimes of Dy³⁺ transitions. The results show that the Dy³⁺-doped NaY(MoO₄)₂ crystal may realize the yellow laser operation.     

Luminescent properties of KGd1−x(WO4)2:Eux and KGd1−x(WO4)2−y(MoO4)y:Eux phosphors in UV-VUV regions

KGd_1−x(WO₄)_2−y(MoO₄)_y:Eu³⁺_x(0.1?x?0.75, y=0 and 0.2) phosphors are synthesized through traditional solid-state reaction and their luminescent properties in ultraviolet (UV) and vacuum ultraviolet (VUV) regions are investigated. Under 147 nm excitation, these phosphors show characteristic red emission with good color purity. In order to improve their emission intensity, the MoO₄²⁻ (20 wt%) is introduced into the anion of KGd_1−x(WO₄):Eu³⁺_x. The Mo⁶⁺ and Eu³⁺ co-doped KGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped KGd(WO₄)₂ in VUV region. The chromaticity coordination of KGd_0.45(WO₄):Eu³⁺_0.55 is (x=0.669, y=0.331), while that of KGd_0.45(WO₄)_1.8(MoO₄)_0.2:Eu³⁺_0.55 is (x=0.666, y=0.334) in VUV region.     

A potential red phosphor LiGd(MoO4)2:Eu for light-emitting diode application

Eu³⁺-doped LiGd(MoO₄)₂ red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu³⁺ doping concentration on PL intensity was investigated, and the optimum concentration of Eu³⁺ doped in LiGd(MoO₄)₂ was found to be 30 mol%. Compared with Y₂O₂S:0.05Eu³⁺, Na_0.5Gd_0.5MoO₄:Eu³⁺ and KGd(MoO₄)₂:Eu³⁺, the LiGd(MoO₄)₂:Eu³⁺ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu³⁺ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO₄)₂:Eu³⁺ phosphor is a good candidate for LED applications.     

KGd(MoO4)2:Eu as a promising red phosphor for light-emitting diode application

A red phosphor KGd(MoO₄)₂:Eu³⁺ was prepared by solid-state reaction technique at high temperature. Its photoluminescent property was investigated and the optimum concentration of Eu³⁺ doped in the KGd(MoO₄)₂ is 25 mol%. Compared with Y₂O₂S:0.05Eu³⁺, the obtained KGd(MoO₄)₂:Eu³⁺ shows wider excitation band around 400 nm, higher intensity of Eu^{3+ 5}D₀–⁷F₂ emission upon excitation 393 nm, and the CIE chromaticity coordinates (x = 0.655, y = 0.345) are closer to the standard of National Television Standard Committee (NTSC). The optical properties of KGd(MoO₄)₂:Eu³⁺ suggest that it is an efficient red-emitting phosphor for light-emitting diode applications.     

Sol-gel growth of Gd2MoO6:Eu nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6:Eu) and their luminescent properties

SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors. The XRD results demonstrate that the Gd₂MoO₆:Eu³⁺ layers on the SiO₂ spheres begin to crystallize after annealing at 600 °C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd₂MoO₆:Eu³⁺ shells on the SiO₂ cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀-⁷F₂ red emission at 613 nm) under the excitation of 307 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the number of coating cycles.     

Spectral characterization and energy levels of Cr:Sc2(MoO4)3 crystal

This paper reports the spectral properties and energy levels of Cr³⁺:Sc₂(MoO₄)₃ crystal. The crystal field strength Dq, Racah parameter B and C were calculated to be 1408 cm⁻¹, 608 cm⁻¹ and 3054 cm⁻¹, respectively. The absorption cross sections σ_α of ⁴A₂→⁴T₁ and ⁴A₂→⁴T₂ transitions were 3.74×10⁻¹⁹ cm² at 499 nm and 3.21×10⁻¹⁹ cm² at 710 nm, respectively. The emission cross section σ_e was 375×10⁻²⁰ cm² at 880 nm. Cr³⁺:Sc₂(MoO₄)₃ crystal has a broad emission band with a broad FWHM of 176 nm (2179 cm⁻¹). Therefore, Cr³⁺:Sc₂(MoO₄)₃ crystal may be regarded as a potential tunable laser gain medium.     

Combustion synthesis and luminescence properties of NaY1−xEux(WO4)2 phosphors

The red phosphors NaY_1−xEu_x(WO₄)₂ with different concentrations of Eu³⁺ were synthesized via the combustion synthesis method. As a comparison, NaEu(WO₄)₂ was prepared by the solid-state reaction method. The phase composition and optical properties of as-synthesized samples were studied by X-ray powder diffraction and photoluminescence spectra. The results show that the red light emission intensity of the combustion synthesized samples under 394 nm excitation increases with increase in Eu³⁺ concentrations and calcination temperatures. Without Y ions doping, the emission spectra intensity of the NaEu(WO₄)₂ phosphor prepared by the combustion method fired at 900 °C is higher than that prepared by the solid-state reaction at 1100 °C. NaEu(WO₄)₂ phosphor synthesized by the combustion method at 1100 °C exhibits the strongest red emission under 394 nm excitation and appropriate CIE chromaticity coordinates (x=0.64, y=0.33) close to the NTSC standard value. Thus, its excellent luminescence properties make it a promising phosphor for near UV InGaN chip-based red-emitting LED application.     

Preparation and luminescent properties of phosphor MGd2(MoO4)4: Eu (M=Ca, Sr and Ba)

Intense red emitting phosphors MGd₂(MoO₄)₄: Eu³⁺ (M=Ca, Sr and Ba) have been synthesized by the simple sol-gel technique. The formation processes and the phase impurity of phosphors are characterized by thermogravimetry-differential thermal analysis (TG-DTA) and power X-ray diffraction (XRD). The narrower size distribution and the regular shape of the phosphor particles are also measured by Field emission scanning electronic microscopy (FE-SEM). Photo-luminescent properties of the phosphors are performed at room temperature. Their excitation spectra present strong absorption at 395 nm near-UV light and 465 nm blue light, which match well with commercial LED chips. The phosphors exhibit satisfactory and excellent red light dominated by 616 nm and their photoluminescence intensity is about 3-4 times stronger than that of phosphor YAG under the 465 nm excitation. In addition, the optimal concentrations of Eu³⁺ for phosphors MGd₂(MoO₄)₄ (M=Ca, Sr and Ba) have also been determined.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.