六元杂环分子电学特性的理论研究

在第一性原理基础上，利用弹性散射格林函数方法，研究了六元杂环分子结2,5-哒嗪二硫酚 、2,5-吡嗪二硫酚和2,5-嘧啶二硫酚的电子输运特性，分析了终端原子的选取对杂环分子吡 啶电学特性的影响. 利用分子前线轨道理论和微扰方法定量地确定了分子与金属的相互作用 能参数. 计算结果表明，2,5-哒嗪二硫酚具有较好的电学特性，而2,5-嘧啶二硫酚在外加电 压较低时电导值比较小. 对于吡啶分子，选取硒原子作为终端原子时，其导电特性优于分别 以氧原子和硫原子作为终端原子的情况. 关键词： 六元杂环分子 伏安特性 电子输运 分子电子学     

官能团对分子器件电输运特性的影响

以4,4′-二巯基联苯分子为研究对象,利用第一性原理计算方法和非平衡格林函数理论,研究了官能团氨基和硝基对分子的电子结构以及分子结电输运性质的影响. 计算结果表明,在分子的不同位置添加同一类官能团氨基会使分子的电子结构发生变化,从而影响分子结的电输运性质. 而在分子的同一位置添加不同类型的官能团氨基和硝基则对分子间的相互作用有着显著影响,会使分子发生转动,从而改变分子的几何结构和电子结构,影响分子结的电输运特性. 并且发现随着分子的转动,添加官能团硝基时分子会呈现出记忆功能. 关键词： 官能团 电子输运 分子电子学     

外加电压对分子器件电子输运特性的影响：非线性输运性质

根据第一性原理计算了由外电场引起的分子的几何结构和电子结构的变化，并利用弹性格林函数的方法计算了分子器件的电输运特性，从而研究了外电场对1,4-苯二硫酚分子电子输运特性的影响。计算结果表明，对于前线分子轨道，能级的移动和分子末端格点的展开系数在低电压范围内随外电压基本成线性变化。外电场对分子器件的伏安特性有很明显的影响，特别是对电导曲线的形状。考虑电场后的理论结果与实验结果符合得较好。     

分子的位置取向对分子器件电输运特性的影响

以1,4-二硫酚(DTB)分子为研究对象，利用第一性原理计算方法和非平衡格林函数理论，研究了分子的位置取向对分子电子结构以及分子结电输运性质的影响.计算结果表明，分子位置取向的改变会影响分子的电子结构，从而影响分子体系的电输运特性，扩展分子的平衡态不是电子输运的最佳状态，适当调节分子的位置取向可以提高分子的电输运特性. 关键词： 位置取向 电子输运 分子电子学     

电极距离对分子器件电输运特性的影响

以4,4′_二巯基联苯分子为研究对象，利用从头计算方法和弹性散射格林函数理论，研究了两个电极之间的距离对分子几何结构和电子结构以及该分子结电输运性质的影响. 计算结果表明，电极距离的不同会改变分子的几何结构和电子结构，从而影响分子体系的电输运特性. 扩展分子的平衡状态不是电子输运的最佳状态，适当调整两个电极之间距离可以改善分子的电输运特性. 关键词： 电极距离 伏 安特性 分子电子学     

间二甲苯分子在不同外电场下结构和解离特性研究

间二甲苯是挥发性有机物(VOCs, Volatile Organic Compounds)的关键活性成分,研究其在外电场下的性质十分重要.采用密度泛函理论(DFT),在B3LYP/6-311G++基组水平上对间二甲苯分子进行优化,从分子结构研究了不同外电场(-0.025 a.u.～0.025 a.u.)作用下,间二甲苯分子的总能量,键长,电偶极矩,前线轨道,红外光谱和解离势能面.计算结果表明,沿两甲基中C原子连线方向的电场(-0.025 a.u.～0.025 a.u.)增加时,分子总能量和能隙先增大后减小,电偶极矩先减小后增加.通过计算发现外电场对间二甲苯分子不同键长和不同振动模式的红外光谱的影响均有所不同.间二甲苯分子的解离特性表现为:沿两甲基中C原子连线方向施加强度超过0.047 a. u.的电场时,位于电场增加方向的甲基与苯环之间起连接作用的C-C键断裂.以上计算结果可为利用电场降解间二甲苯提供重要理论参考.     

光致异构体开关特性的理论研究

利用弹性散射格林函数方法,对4,4-二羧基1,2-二苯乙烯分子的两种异构体与金电极构成的单分子结进行了研究. 研究表明,该类分子是通过末端羧基化学吸附于金表面的,两种分子结电导特性的差异主要是因为分子与电极的相互作用所致. 对每一种分子来说,都存在三种不同的稳定电导值,分别对应着分子末端与金表面的不同接触方式. 分子与金表面的相互作用导致分子结电子结构的变化是其电导差异的主要原因. 理论结果与实验测量结果符合得较好. 关键词： 光致异构体 伏安特性 电子输运 分子电子学     

间二甲苯分子在不同外电场下结构和解离特性研究

间二甲苯是挥发性有机物(VOCs,Volatile Organic Compounds)的关键活性成分，研究其在外电场下的性质十分重要.采用密度泛函理论(DFT)，在B3LYP/6-311G++基组水平上对间二甲苯分子进行优化，从分子结构研究了不同外电场(-0.025 a.u.～0.025 a.u.)作用下，间二甲苯分子的总能量，键长，电偶极矩，前线轨道，红外光谱和解离势能面.计算结果表明，沿两甲基中C原子连线方向的电场(-0.025 a.u.～0.025 a.u.)增加时，分子总能量和能隙先增大后减小，电偶极矩先减小后增加.通过计算发现外电场对间二甲苯分子不同键长和不同振动模式的红外光谱的影响均有所不同.间二甲苯分子的解离特性表现为:沿两甲基中C原子连线方向施加强度超过0.047 a.u.的电场时，位于电场增加方向的甲基与苯环之间起连接作用的C-C键断裂.以上计算结果可为利用电场降解间二甲苯提供重要理论参考．     

官能团对芳烃体系电学特性的影响

以联苯分子为研究对象,利用密度泛函理论和弹性散射格林函数方法,研究了不同官能团对分子的电子结构以及分子结电输运性质的影响.计算结果表明在分子中的同一位置添加不同的官能团时,会使分子的几何结构和电子结构发生变化,从而影响分子结的电输运性质.     

官能团对芳烃体系电学特性的影响

以联苯分子为研究对象,利用密度泛函理论和弹性散射格林函数方法,研究了不同官能团对分子的电子结构以及分子结电输运性质的影响.计算结果表明在分子中的同一位置添加不同的官能团时,会使分子的几何结构和电子结构发生变化,从而影响分子结的电输运性质.     

Electronic states at junctions of molecular semiconductors

We consider properties of junctions for the field effect transistors (FET) geometry where molecular crystals or conducting polymers are used as semiconducting layers. In the molecular crystal Coulomb interaction of free electrons with surface polar phonons of the dielectric layer can lead to self-trapping of carriers and to the formation of a strongly coupled long-range surface polaron. The effect is further enhanced in presence of the bias electric field and strongly depends on the gate dielectric used.In conducting polymers instead of the usual band bending near the contact interface, new allowed electronic bands appear inside the band gap. As a result the bias electric field and the injected charge penetrate into the polymer via creation of the soliton lattice whose period changes with the distance from the contact surface. The current through the contact is performed via moving solitons.     

Parametric resonance in the system of long Josephson junctions

The phase dynamics of the system of long Josephson junctions whose length exceeds the Josephson penetration depth has been studied. The possibility of the appearance of a longitudinal plasma wave and parametric resonance has been demonstrated. Both inductive and capacitive couplings between Josephson junctions have been taken into account in the calculations. The current-voltage characteristics, as well as time evolution of the spatial distribution of the electric charge in superconducting layers and the magnetic field, have been calculated in all Josephson junctions of the system. The coexistence of the longitudinal plasma wave and fluxon states has been observed in the region of parametric resonance beginning with a certain length of the Josephson junction. This indicates the appearance of a new unique collective excitation in the system of coupled Josephson junctions, namely, a composite state of the Josephson current, electric field, and vortex magnetic field.     

Two Possible Configurations for Silver-C60-Silver Molecular Devices and Their Conductance Characteristics

Coherent electronic transport properties of silver-C60-silver molecular junctions in different configurations are studied using hybrid density function theory. The experimentally measured current flows of （760 molecules adsorbed on the silver surface are well reproduced by theoretical calculations. It is found that the current-voltage characteristics of the molecular junctions depend strongly on the configurations of the junctions. Transmission spectra combined with density of states can help us to understand in depth the transport properties. Different kinds of electrode construction are also discussed. With the help of the calculation, two possible configurations of silver-C60-silver molecular junctions are suggested.     

Spectroscopic interrogation and charge transport properties of molecular transistors

ABSTRACT

Molecular transistors have been extensively investigated as the building blocks for the ultimate miniaturization of electronic devices. They are assembled from single molecules and molecular monolayers serving as a current-carrying channel in a conventional field-effect transistor configuration, in which gate electrodes have been electrically or electrochemically implemented in several types of test beds such as electromigration junctions, mechanically controllable break junctions, and devices with carbon-based electrodes. The energy level alignments of the component molecules incorporated into the transistor can be tuned using molecular orbital gating and it can ultimately control the flow of charge carriers. Herein, we review recent progress in studying spectroscopic characterization techniques and charge transport properties of molecular transistors.     

Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes

The idea of replacing traditional silicon-based electronic components with the ones assembled by organic molecules to further scale down the electric circuits has been attracting extensive research focuses. Among the molecularly assembled components, the design of molecular logic gates with simple structure and high Boolean computing speed remains a great challenge. Here, by using the state-of-the-art nonequilibrium Green's function theory in conjugation with first-principles method, the spin transport properties of single-molecule junctions comprised of two serially connected transition metal dibenzotetraaza[14]annulenes(TM(DBTAA), TM = Fe, Co) sandwiched between two single-walled carbon nanotube electrodes are theoretically investigated. The numerical results show a close dependence of the spin-resolved current-voltage characteristics on spin configurations between the left and right molecular kernels and the kind of TM atom in TM(DBTAA)molecule. By taking advantage of spin degree of freedom of electrons, NOR or XNOR Boolean logic gates can be realized in Fe(DBTAA) and Co(DBTAA) junctions depending on the definitions of input and output signals. This work proposes a new kind of molecular logic gates and hence is helpful for further miniaturization of the electric circuits.     

Low field DC investigation of hot carrier trapping in silicon dioxide films

The experimental method used in this work is based upon the idea of nonavalanche injection of carriers heated by direct electric field. The structure consisted of an n-channel MOS transistor and two p-n junctions. The process of charge injection in this structure was investigated by studying the dependence of gate current on heating voltage. The trapping properties of the SiO₂ film were studied by monitoring the charging of the film during injection of electrons. The capture cross-sections, the trap centre concentrations and the dependence of the capture cross section on the electric field for fields between 1 MV/cm and 2.5 MV/cm were determined.     

Many-body effects on the transport properties of single-molecule devices

The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the numerical renormalization group method. At low temperatures and weak electron-phonon coupling the properties of the conductance can be explained in terms of the standard Kondo model with renormalized parameters. At large electron-phonon coupling a charge analog of the Kondo effect takes place that can be mapped into an anisotropic Kondo model. In this regime the molecule is strongly polarized by a gate voltage which leads to rectification in the current-voltage characteristics of the molecular junction.     

Weak Gate Effect in 1,3-Benzenedithiol Molecular Device

We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.     

FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.