Roles of interfaces in nanostructured silicon luminescence

The increasing interest in photonics in the field of communication has led to intense research work on silicon based nanostructures showing efficient photoluminescence. The present paper reports photoluminescence measurements obtained at room temperature in silicon-rich-silica-silica multilayers grown by reactive magnetron sputtering. The silicon nanograin size is controlled via the silicon layer thickness which can be monitored with high accuracy. We aim to develop a comprehensive understanding of the combined roles played by the quantum confinement effect through the silicon grain size and the existence of an interfacial region between the grain and the surrounding silica matrix. Two bands of photoluminescence are displayed in the 600 nm-900 nm range and correspond to the bands previously observed at 2 K. Their origin is demonstrated through a model based on the solution of the Schrödinger equation of the exciton wavefunction in a one-dimension geometry corresponding to the growth direction of the multilayers. The silicon layer as well as the Si-SiO₂ interface thicknesses are the key parameters of the photoluminescence features.Received: 6 April 2004, Published online: 21 October 2004PACS: 78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures - 73.21.Ac Multilayers - 71.23.An Theories and models; localized states     

Thickness‐dependent structural characteristics for a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers

The interior structure, morphology and ligand surrounding of a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers are determined by various hard X‐ray techniques in order to reveal the growth characteristics of Cr‐based thin films. A Cr monolayer presents a three‐stage growth mode with sudden changes occurring at a layer thickness of ～2 nm and beyond 6 nm. Cr‐based multilayers are proven to have denser structures due to interfacial diffusion and layer growth mode. Cr/C and Cr/Sc multilayers have different interfacial widths resulting from asymmetry, degree of crystallinity and thermal stability. Cr/Sc multilayers present similar ligand surroundings to Cr foil, whereas Cr/C multilayers are similar to Cr monolayers. The aim of this study is to help understand the structural evolution regulation versus layer thickness and to improve the deposition technology of Cr‐based thin films, in particular for obtaining stable Cr‐based multilayers with ultra‐short periods.     

镶嵌型纳米锗的制备新方法及其光致发光研究

报道了通过热氧化氢化非晶锗硅薄膜和氢化非晶硅／氢化非晶锗多层膜以制备镶嵌于二氧化硅中纳米锗材料的新方法。研究结果表明：在经过氧化处理后,薄腊在的Ｓｉ与Ｏ结合形成氧化硅同时单晶Ｇｅ被析出形成了镶嵌型的纳米Ｇｅ颗粒;在Ａｒ＾＋激光（４８８ｎｍ）的激发下,观察到了室温下的光致民光现象。发光峰中心位于２．２ｅＶ。由多层腊制备出的样吕其发光强度相对加强,且半高宽也显著变窄,表明利用多层膜可较好地控制尺寸分布     

Interface characterization of B4C‐based multilayers by X‐ray grazing‐incidence reflectivity and diffuse scattering

B₄C‐based multilayers have important applications for soft to hard X‐rays. In this paper, X‐ray grazing‐incidence reflectivity and diffuse scattering, combining various analysis methods, were used to characterize the structure of B₄C‐based multilayers including layer thickness, density, interfacial roughness, interdiffusion, correlation length, etc. Quantitative results for W/B₄C, Mo/B₄C and La/B₄C multilayers were compared. W/B₄C multilayers show the sharpest interfaces and most stable structures. The roughness replications of La/B₄C and Mo/B₄C multilayers are not strong, and oxidations and structure expansions are found in the aging process. This work provides guidance for future fabrication and characterization of B₄C‐based multilayers.     

原位等离子体逐层氧化a-Si:H/SiO2多层膜的光致发光研究

采用在等离子体增强化学汽相沉积系统中沉积a-Si:H和原位等离子体逐层氧化的方法制备a-Si:H/SiO2多层膜.改变a-Si:H层的厚度，首次在室温下观察到来自a-Si:H/SiO2多层膜较强的蓝色光致发光和从465到435nm的蓝移.x射线能谱证明，SiO2层是化学配比的SiO2；C-V特性表明，a-Si:H/SiO2界面得到了很好的钝化；透射电子显微镜表明，样品形成了界面陡峭的多层结构.结合光吸收谱和光致发光谱的研究，对其发光机理进行了讨论.用一维量子限制模型对光致发光峰随着a-Si:H层厚度的减小 关键词： a-Si:H/SiO2多层膜 光致发光     

CdS/ZnS core–shell nanoparticles in arachidic acid LB films

Core–shell CdS/ZnS nanoparticles in arachidic acid film were prepared through a novel Langmuir–Blodgett (LB) approach. Post-deposition treatment of the precursor LB multilayers of cadmium arachidate with H₂S gas followed by intercalation of Zn²⁺ ions and further sulfidation result in the formation of CdS/ZnS nanoparticles in the LB film. The formation of these nanoparticles and resulting changes in layered structures were studied by FTIR and X-ray reflection measurements. The optical properties were studied using UV–vis absorption and photoluminescence spectroscopy. A red-shift in the absorption spectrum and enhancement of CdS excitonic emission together with reduction of surface states emission suggest that after the intercalation step, a thin layer of ZnS surrounds the CdS nanoparticles, thus forming a core–shell structure. Subsequent to the second sulfidation, a further red-shift in absorption suggests the formation of a thicker ZnS coating on CdS. Electron diffraction of CdS nanoparticles coated with thicker ZnS showed the diffraction patterns of only ZnS, as expected for core–shell structures.     

Anneal temperature dependence of Si/SiO2 superlattices photoluminescence

Photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray reflectometry and high resolution electron microscopy have been used to interpret the photoluminescence properties of annealed (3/19 nm) Si/SiO₂ multilayers grown by reactive magnetron sputtering. The multilayers show an emission in the visible and near-infrared range after heat treatment from 900°C which tends to decrease from 1200°C. Three different origins for the photoluminescence activity have been found. An anneal temperature of 1200°C is necessary to optimise the silicon crystallisation within the silicon sublayers.     

LB膜中混合聚集体的光致荧光特性研究

研究了不同活性分子（半花菁和氐盐）混合聚集体的形成以及紫外光照射对ＬＢ交替多层膜光致荧光（ＰＬ）特性的影响。在半花菁和氐盐混合的ＬＢ膜中,由于不同分子间较强的相互作用使混合膜的荧光光谱较纯半花菁和氐盐分子膜分别发生了蓝移和红移。利用紫外光照射可以使分子的聚集体部分分解甚至破坏分子的结构,导致光致荧光强度明显减弱。     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

Spatial versus quantum confinement in porous amorphous silicon nanostructures

Light-emitting porous amorphous silicon has been produced by anodization in HF of hydrogenated amorphous silicon films. The maximal thickness of the porous films is limited by the onset of an instability which results in the formation of large channels short-circuiting the amorphous layer. This is due to the high resistivity of the amorphous silicon films as compared to that of the electrolyte. Confinement effects on the electron wavefunction are analyzed in situ using photoluminescence measurements in hydrofluoric acid and compared to those observed in porous crystalline silicon. For crystalline silicon, a huge blue shift of the photoluminescence is observable upon reducing the size of the structures by photo-etch, showing clear evidence of quantum confinement effects in this material. No shift has been observed when carrying out the same experiment with amorphous silicon. This indicates that the extent of the wavefunction in the bandtail states involved in luminescence is too small to be sensitive to confinement down to the minimum sizes of our porous material ( 3 nm). Measurements of the width and the temperature dependence of the photoluminescence demonstrate that the Urbach energy does not change upon increasing the porosity, i.e., upon decreasing the size of the a-Si:H nanostructures, in contradiction with what has been reported in ultrathin a-Si:H multilayers. Received: 3 August 1998     

Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers

Er-doped SiO single layer and Er-doped SiO/SiO₂ multilayers with different SiO thicknesses were prepared by evaporation. In the as-deposited samples, the erbium ions exhibit a very weak photoluminescence emission at 1.54 μm. This luminescence is strongly enhanced after annealing treatments between 500 and 1050 °C, with an optimal annealing temperature which is dependent from the SiO thickness. For the SiO single layer, this optimal temperature is around 700 °C while it is shifted at highest temperature for the multilayers. The origin of the higher luminescence intensity in the SiO layer is also discussed.     

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties

Periodically nanopatterned Si structures have been prepared by using a nanosphere lithography technique. The formed nanopatterned structures exhibit good anti‐reflection and enhanced optical absorption characteristics. The mean surface reflectance weighted by AM1.5 solar spectrum (300–1200 nm) is as low as 5%. By depositing Si quantum dot/SiO₂ multilayers (MLs) on the nanopatterned Si substrate, the optical absorption is higher than 90%, which is significantly improved compared with the same multilayers deposited on flat Si substrate. Furthermore, the prototype n‐Si/Si quantum dot/SiO₂ MLs/p‐Si heterojunction solar cells has been fabricated, and it is found that the external quantum efficiency is obviously enhanced for nanopatterned cell in a wide spectral range compared with the flat cell. The corresponding short‐circuit current density is increased from 25.5 mA cm^?2 for flat cell to 29.0 mA cm^?2 for nano‐patterned one. The improvement of cell performance can be attributed both to the reduced light loss and the down‐shifting effect of Si quantum dots/SiO₂ MLs by forming periodically nanopatterned structures.     

a-Si:H/a-SiNx:H超晶格薄膜光致发光性质的研究

本文报道了a-Si:H/a-SiNx:H超晶格薄膜光致发光某些性质的研究。实验发现,这种超晶格薄膜光致发光的强度和峰值能量随交替层a-Si:H厚度,测量温度及光照时间等而变化。同时还发现,在阴、阳两极上,利用GD法沉积的样品,发光强度和峰值能量也有所不同。文中对这些实验结果作了初步解释。     

Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment

a-Si/insulator multilayers have been deposited on (0 0 1) Si by electron gun Si evaporation and periodic electron cyclotron resonance plasma oxidation or nitridation. Exposure to an O or N plasma resulted in the formation of a thin SiO₂ and SiN_x layer whose thickness was self-limited and controlled by process parameters. For thin-layer (2 nm) Si/SiO₂ and Si/SiN_x multilayers no visible photoluminescence (PL) was observed in most samples, although all exhibited weak “blue” PL. For the nitride multilayers, annealing at 750°C or 850°C induced visible PL that varied in peak energy with Si layer thickness. Depth profiling of a-Si caps on thin insulating layers revealed no detectable contamination for the SiN_x layers, but substantial O contamination for the SiO₂ films.     

紫外光照射对LB膜光致荧光特性的影响

采用稳态和时间分辨荧光光谱技术,研究了非偏振紫外光照射对氐盐有机分子LB交替多层膜光致荧光特性的影响。紫外光照射可以使有机分子的聚集体部分分解甚至破坏分子的结构,导致光致荧光强度明显减弱     

Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures

The current–voltage (I–V) and capacitance–voltage (C–V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80–320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features.     

Deconvolution of the light- and heavy-hole free exciton fine structure in AlxGa1−xAs---GaAs multi quantum wells using photoluminescence excitation spectroscopy

Sharp-line structure associated with both the light-hole free exciton (LHFE) and heavy-hole free exciton (HHFE) transitions has been observed in multi-quantum-well (MQW) structures of four well sizes in photoluminescence (PL) and reflection spectra. These spectra have been deconvulated using photoluminescence excitation spectroscopy (PLE). The LHFE and HHFE sharp-line structure is associated with interface structure composed of growth islands at the interface between the barriers and the wells. Estimates of the average interface island sizes for the four different MQW structures are made based on theoretical modelling. A correlation is established between particular LHFE fine structure components and specific HHFE fine structure components. A model is developed to account for the LHFE and HHFE fine structure based on a non-random distribution of the interface structure. The physical location of the excitons is demonstrated to be in regions of the wells with essentially identical interfacial microstructure. Evidence for diffusion of excitons from effectively narrow well regions to wider well regions is presented.     

Predicted magnetoelectric effect in Fe/BaTiO3 multilayers: ferroelectric control of magnetism

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric-ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric-ferromagnet interface that alters the interface magnetization when the electric polarization reverses. Using Fe/BaTiO3 multilayers as a representative model, we show a sizable difference in magnetic moments of Fe and Ti atoms at the two interfaces dissimilar by the orientation of the local electric dipole moments. The predicted magnetoelectric effect opens a new direction to control magnetic properties of thin-film layered structures by electric fields.     

Development of laser deposited multilayer zone plate structures for soft X-ray radiation

As a novel approach, the combination of pulsed laser deposition and focused ion beam was applied to fabricate different types of multilayer zone plate structures for soft X-ray applications. For this purpose, high quality non-periodic ZrO₂/Ti multilayers were deposited by pulsed laser deposition on planar Si substrates and on rotating steel wires with layer thicknesses according to the Fresnel zone plate law. Linear focusing optics were fabricated by cutting slices out of the multilayers by focused ion beam and placing them directly over pinholes within Si₃N₄ substrates. Additionally, it was shown that laser deposition of depth-graded multilayers on a wire is also a promising way for building up multilayer zone plates with point focus. First experiments using a table-top X-ray source based on a laser-induced plasma show that the determined focal length and spatial resolution of the fabricated multilayer Laue lens corresponds to the designed optic.     

Photoluminescence of germanium quantum dots grown in silicon on a SiO<Subscript>2</Subscript> submonolayer

The photoluminescence of quantum dots in Si/Ge/SiO₂/Si and Si/Ge/Si structures is investigated as a function of temperature. The low activation energies for the temperature quenching of photoluminescence of germanium quantum dots in both structures are explained in terms of the thermally stimulated capture of holes from quantum dots to the energy levels of defects localized in their vicinity.