高温退火对蓝宝石基片的表面形貌和对CeO2缓冲层以及Tl-2212超导薄膜生长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化，以及它对CeO₂缓冲层和Tl-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明，在流动氧环境中1000℃温度下退火，蓝宝石(1102)的表面首先局部区域形成台阶结构，然后表面形成叠层台阶结构，随着退火时间的延长，表面发生了台阶合并现象，表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明，通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石     

高温退火对蓝宝石基片的表面形貌和对CeO缓冲层以及Tl-2212超导薄膜长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ.     

热处理对MgO基片的表面形貌以及对CeO_2和Tl-2212薄膜生长的影响

研究了MgO基片在高温退火时表面形貌和表面结构的变化,以及它对CeO2缓冲层和Tl-2212超导薄膜生长的影响。原子力显微镜(AFM)研究表明,在流动氧环境中1100℃温度下退火,MgO的表面首先由未退火时的皱褶形貌,演化为光滑表面,随着退火时间的延长,表面形貌最终演化为具有光滑基底的独立生长峰结构。XRD测试表明,通过高温热处理可以大幅度提高MgO基片表面结晶的完整性。在1100℃温度下热处理8小时的MgO基片上可以生长出具有高度c轴取向的CeO2(001)缓冲层。然后在此缓冲层上制备了厚度为500nm的外延Tl-2212超导薄膜,其临界转变温度(Tc)达到108.6K,液氮温度下临界电流密度(Jc)为2.8mA/cm2,微波表面电阻Rs(77K,10GHz)约为360.9μΩ。     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

报道了在蓝宝石衬底上制备CeO₂缓冲层的原位双温工艺法及其对Tl₂Ｂa₂CaCu₂Ｏ₈（Tl-2212）薄膜超导特性的影响．XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点．在先驱膜的高温后退火过程中,40 nm厚的CeO₂薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散．随后制备厚度为530 nm的Tl-2212 关键词： Tl-2212超导薄膜 蓝宝石 氧化铈缓冲层 原位双温工艺法     

蓝宝石基片上制备双面Tl_2Ba_2CaCu_2O_8超导薄膜

在蓝宝石基片上,以CeO2为缓冲层制备了高质量的双面Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。以金属铈靶作为溅射源生长了c轴取向的CeO2缓冲薄膜,并对CeO2薄膜进行了高温处理,有效改善了其结晶质量和表面形貌。采用两步法制备了双面的Tl-2212超导薄膜。XRD测试显示,薄膜为纯的Tl-2212相,且其晶格c轴垂直于衬底表面。超导薄膜的Tc为106K,Jc(77K,0T)为3.5MA/cm2,微波表面电阻Rs(77K,10GHz)为390μΩ。     

Tl-2212超导薄膜的制备

以铝酸镧晶体为基片,采用两步法制备Tl-2212超导薄膜,包括在低温(150℃)下利用激光脉冲沉积(PLD)工艺沉淀Ba2CaCu2Ox非晶前驱体薄膜和在高温(740～830℃)下前驱体薄膜的铊化结晶、取向生长过程.实验结果表明所制得的膜的相组成为Tl-2212,表面存在大量均匀分布的成分为Tl2Ba2CaCu2Ox的亚微米颗粒.其零电阻温度为101K.薄膜与基片之间界面清晰,没有过渡层,薄膜具有良好的c取向外延条纹.     

Tl系超导薄膜金属涂层的生长与特性研究

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.     

蓝宝石基片的处理方法对ZnO薄膜生长行为的影响

采用反应射频磁控溅射方法,在经过不同方法处理的蓝宝石基片上,在同一条件下沉积了ZnO薄膜.利用原子力显微镜、X射线衍射、反射式高能电子衍射等分析技术,对基片和薄膜的结构、表面形貌进行了系统表征.研究结果显示,不同退火条件下的蓝宝石基片表面结构之间没有本质的差异,均为α-Al₂O₃ (001)晶面,但基片表面形貌的变化较大.在不同方法处理的蓝宝石基片上生长的ZnO薄膜均具有高c轴取向的织构特征,但薄膜的表面形貌差异较大.基片经真空退火处 关键词： ZnO薄膜 反应磁控溅射 基片处理 形貌分析     

在RABiTS基带上制备Tl-2212超导薄膜

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的c轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77K,0T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜的Tc可达97.7K,Jc (77K,0T)也可以达到0.45MA/cm2.     

Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system

Superconducting Tl-based films were prepared on a LaAlO₃ single crystal substrate. Spray pyrolysis of Ba, Ca and Cu nitrate solutions was used for deposition of the precursor films. They were subsequently ex-situ thallinated in flowing oxygen (open system). While the superconducting Tl-2212 phase formed at an annealing temperature of 880°C, thallination at 900°C led to the formation of a Tl-2223 /Tl-2212 mixture. The amount of Tl-2223 increased with prolonged thallination, whereas the Tl-2212 phase progressively disappeared. Films prepared in such a manner were c-oriented and contained only low amounts of non-superconducting impurities. The resulting samples were characterized by XRD and SEM and their T _C values were determined by resistive four-point measurements. They showed critical temperatures in the range of T _ON = 125–135 K, T _C0 = 91–93 K. Differences between the composition and properties of the obtained films and those thallinated in closed systems under 50 kPa of oxygen are discussed in this paper. Results show that the Tl-2212 → Tl-2223 transformation proceeds at a slower rate under flowing oxygen than in a closed system. Presented at 5-th International Conference Solid State Surfaces and Interfaces, November 19–24, 2006, Smolenice Castle, Slovakia.     

Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (α-Al₂O₃) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates is given.     

Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering

ZnO thin films were epitaxially grown on sapphire (0 0 0 1) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800 °C, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (0 0 2) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800 °C in N₂. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V_O) and interstitial oxygen (O_i). The biggest ratio of the PL intensity of UV emission to that of visible emission (I_NBE/I_DLE) is observed from ZnO thin films annealed at 800 °C in N₂. Therefore, we suggest that annealing temperature of 800 °C and annealing atmosphere of N₂ are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance.     

Influence of the reaction conditions on the formation of Tl(Re)-Ba-Ca-Cu-O superconducting thin films by thallination in open system

Rhenium avoids air degradation of the target as well as of precursor thin films during the preparation of high temperature Tl-based superconductors. Addition of Re has been used during synthesis of oriented Tl(Re)-Ba-Ca-Cu-O films. High temperature superconducting Tl-based thin films were prepared by a two step method combining RF magnetron sputtering and ex-situ thallination. Precursors with a composition of Re_0.1Ba₂Ca₂Cu₃O_x were deposited on a CeO₂ buffered R-plane sapphire substrate. The sputtered films were prepared at room temperature in an Ar atmosphere. The thallination of the precursor films was performed in a one zone configuration, where both the pellet and precursor film were kept at the same temperature. The thallination temperature varied in the range of 850–880°C and samples were held for 30, 45 and 60 min at this temperature in a flowing oxygen atmosphere. Besides Tl-2212, X-ray diffraction reveals the possibility of also preparing the Tl-2223 phase, which was until now not reported in a Re doped form. Presented at 5-th International Conference Solid State Surfaces and Interfaces, November 19–24, 2006, Smolenice Castle, Slovakia     

Annealing effect on the superconductivity of In2O3–ZnO thin films

We have investigated the relation among ρ–T characteristics, superconductivity, annealing conditions and the crystallinity of polycrystalline (In₂O₃)_1−x–(ZnO)_x films. We annealed as-grown amorphous films in air by changing annealing temperature and time. It is found that the films annealed at 200 °C or 300 °C for a time over 0.5 h shows the superconductivity. Transition temperature T_c and the carrier density n are T_c < 3.3 K and n ≈ 10²⁵–10²⁶ m⁻³, respectively. Investigations for films with x = 0.01 annealed at 200 °C have revealed that the T_c, n and crystallinity depend systematically on annealing time. Further, we consider that there is a suitable annealing time for sharp resistive transition because the transition width becomes wider with longer annealing times. We studied the upper critical magnetic field H_c2(T) for the film with different annealing time. From the slope of dH_c2/dT for all films, we have obtained the resistivity ρ dependence of the coherence length ξ(0) at T = 0 K.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.