共查询到19条相似文献,搜索用时 140 毫秒
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采用一种新型的Nd:YVO4/YVO4复合晶体,利用V型折叠腔,研究了高功率激光二极管端面泵浦的Nd:YVO4/YVO4复合晶体激光器基频1.06 μm及倍频532 nm激光的输出特性.当泵浦功率为24.6 W时,获得1.06 μm激光的最大输出功率为11.7 W,光-光转换效率为48%.当泵浦功率为17 W时,获得了5.32 W的绿光输出,光-光转换效率达到31.3%. 相似文献
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报道了一种利用激光二极管(LD)端面泵浦Nd:YVO4晶体,声光调Q,LBO临界相位匹配腔内倍频的高效率、小体积、风冷绿光激光器。分析了不同偏振光泵浦的情况下,激光晶体对泵浦光的吸收特性。由分析得出,采用部分偏振光泵浦,可以提高激光晶体对泵浦光吸收均匀性,改善基波畸变,获得高转换效率激光输出。实验中,在泵浦光功率为33 W、声光调Q重复频率为20 kHz时,得到脉宽为23.96 ns、平均功率为15 W的1064 nm基频光输出。经倍频后,得到平均功率为11.2 W的绿光输出,倍频效率为74.6%,总体光-光转换效率为34%。在输出功率为10 W时,测得1 h内输出功率不稳定度为0.512 2%,水平方向和竖直方向的光束质量因子M2分别为1.2和1.1。 相似文献
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An efficient continuous-wave YVO_4/Nd:YVO_4/YVO_4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode 下载免费PDF全文
We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO_4/Nd:YVO_4/YVO_4 crystal and pumped by a wavelength-locked 878.9 nm diode laser.A maximum output power of 5.3 W is achieved at a pump power of 26 W,corresponding to an optical conversion efficiency of 20%and a slope efficiency of 21%.The Raman threshold for the diode pump power was only 0.92 W.The results reveal that in-band pumping by a wavelength-locked diode laser significantly enhances output power and efficiency of self-Raman lasers by virtue of improved pump absorption and relieved thermal loading. 相似文献
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26W near diffraction limited Q-switched green laser based on a diode-end-pumped master oscillator power amplifier 下载免费PDF全文
An efficient acousto-optically Q-switched extracavity frequency-doubled 532nm laser based on a diode-end-pumped master oscillator power amplifier (MOPA) is demonstrated. With a type I non-critically phase-matched LBO, 26W of average power at 532nm in a near diffraction limited mode at a repetition rate of 30kHz was generated under 43W pump power of 1064nm Nd:YVO_{4} laser, which correspond to a frequency-doubling conversion efficiency of 60%. 相似文献
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Y. Yao Zhao Ling B. Li D. P. Qu K. Zhou Y. B. Zhang Y. Zhao Q. Zheng 《Optics and Spectroscopy》2013,114(3):459-462
Efficient and compact yellow green pulsed laser output at 543 nm is generated by frequency doubling of a passively Q-switched end diode-pumped Nd:YVO4 laser at 1086 nm under the condition of sup-pressing the higher gain transition near 1064 nm. With 15 W of diode pump power and the frequency doubling crystal LBO, as high as 1.58 W output power at 543 nm is achieved. The optical to optical conversion efficiency from the corresponding Q-switched fundamental output to the yellow green output is 49%. The peak power of the Q-switched yellow green pulse laser is up to 30 kW with 5 ns pulse duration. The output power stability over 8 hours is better than 2.56% at the maximum output power. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by frequency doubling of a passively Q-switched end diode pumped Nd:YVO4 laser at 1086 nm. 相似文献
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We report a continuous-wave (CW) coherent green radiation at 533 nm by intracavity frequency doubling generation of 1066 nm
Nd:LuVO4 laser. With incident pump power of 18.2 W, output power of 4.3 W at 533 nm has been obtained using a 5 mm-long LBO crystal.
The optical conversion efficiency was up to 23.6%. At the output power level of 4.3 W, the output stability is better than
3%. The beam quality M2 values were equal to 1.13 and 1.21 in X and Y directions, respectively. 相似文献
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We report an efficient intracavity second-harmonic generation (SHG) at 1359 nm in a non-linear optical crystal, LiB3O5 (LBO), performed with a diode end pumped continuous-wave (cw) Nd:Lu2O3 laser. In the case of a laser with a Nd:Lu2O3 crystal frequency-doubled with a LBO crystal cut for type I frequency doubling. A cw SHG output power of 462 mW has been
obtained using a 10 mm long LBO crystal. The red power stability was 3.4% in 4 h. 相似文献
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B. Z. Li X. X. Su X. K. Li X. H. Zhang X. Gao J. Q. Lin G. Y. Jin 《Laser Physics》2011,21(6):1006-1008
It is reported that efficient continuous-wave (CW) red laser generation at 693 nm in a LBO crystal at type-I phase matching
direction performed with a diode-pumped Nd:YVO4 laser. With incident pump power of 18.2 W, output power of 278 mW at 693 nm has been obtained using a 10 mm-long LBO crystal.
At the output power level of 278 mW, the output stability is better than 2.9%. 相似文献