三维半导体器件问题在时空局部加密复合网格上的有限差分格式

半导体器件的瞬时状态由三个方程组成的非线性偏微分方程组的初边值问题决定,电子位势方程是椭圆型的,电子和空穴浓度方程是抛物型的．依据实际数值模拟的需要,提出了一类三维半导体问题在时间和空间上进行局部加密的复合网格上的有限差分形式,并给出了电子和空穴浓度的最大模误差估计,最后给出了数值算例．     

二维热传导型半导体问题的一个二阶格式

热传导型半导体器件瞬态问题的数学模型由四个拟线性偏微分方程所组成的方程组的初边值问题来描述。其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的,温度方程为热传导型的。本文对二维热传导型半导体的一类混合初边值问题利用降阶法给出了一个二阶差分格式,并对其进行了详细的理论分析,得到了离散的犾２ 误差估计结果。     

热传导型半导体瞬态问题特征变网格有限元法及其分析

热传导型半导体器件的瞬时状态由四个方程的非线性偏微分方程组的初边值问题所决定，其中电子位势方程是椭圆型的，电子和空穴浓度方程是对流扩散型的，温度方程为热传导型的。本文提出解这类问题的特征变网格有限元法，并进行了理论分析，在一定条件下，得到了某种意义下的最佳L^2误差估计结果。     

三维半导体问题的迎风有限体积格式

半导体器件的瞬时状态由包含三个拟线性偏微分方程所组成的方程组的初边值问题来描述.其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的.作者对三维半导体模型问题采用四面体网格上的有限体积元方法进行逼近,具体地,对电子位势方程采用一次元有限体积法来逼近,对电子浓度和空穴浓度方程采用迎风有限体积方法来逼近,并进行了详细的理论分析,得到了O(h+\Delta t)阶的L^2模误差估计结果.     

热传导型半导体问题的配置方法及误差分析

热传导型半导体瞬态问题的数学模型是一类非线性偏微分方程的初边值问题．电子位势方程是椭圆型的，电子、空穴浓度方程及热传导方程是抛物型的．该文给出求解的配置方法，得到次优犔２模误差估计，并将配置法和Ｇａｌｅｒｋｉｎ有限元方法进行数值结果比较．     

三维热传导型半导体问题的特征有限元方法和分析

本文研究三维热传导型半导体瞬态问题的特征有限元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题,对电子位势方程提出Ｇａｌｅｒｋｉｎ逼近;对电子,空穴浓度方程采用特征有限元逼近;对热传导方程采用对时间向后差分的Ｇａｌｅｒｋｉｎ逼近．应用微分方程先验估计理论和技巧得到了最优阶Ｌ＾２误差估计。     

三维热传导型半导体问题的特征混合元方法和分析

本文研究三维热传导型半导体态问题的特征混合元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题,对电子位势方程提出混合元逼近,对电子,空穴浓度方程笔挺表限元逼近;对热传导方程采用对时间向后差分的Ｇａｌｅｒｋｉｎ逼近,应用微分方程先验估计理论和技巧得到了最优阶Ｌ＾２误差估计。     

半导体瞬态问题的修正迎风有限体积格式

半导体器件的瞬时状态由包含三个拟线性偏微分方程所组成的方程组的初边值问题来描述.其中电子位势方程足椭圆型的,电子和空穴浓度方程是对流扩散型的.对电子位势方程采用一次元有限体积法米逼近,对电子浓度和空穴浓度方程采用修正的迎风有限体积方法来逼近,并进行详细的理论分析,关于位势得到O(h Δt)阶的H1模误差估计结果,关于浓度得到O(h2 Δt)阶的L2模误差估计结果.最后,给出数值例子.     

半导体问题的交替方向有限元方法

该文用交替方向有限元方法求解半导体问题的Energy Trans port (ET)模型。对模型中椭圆型的电子位势方程采用交替方向迭代法，对流占优扩散的电子浓度和空穴浓度方程采用特征交替方向有限元方法，热传导方程利用Patch逼近采用交替方向有限元方法求解。利用微分方程的先验估计理论和技巧，分别得到了椭圆型方程和抛物型方程的最优H+1和L+2误差估计。     

三维热传导型半导体器件瞬态模拟问题的Crank-Nicolson差分-流线扩散有限元法及其数值分析

本文研究三维热传导型半导体器件瞬态模拟问题的数值方法.针对数学模型中各方程不同的特点,分别提出不同的有限元格式.特别针对浓度方程组是对流为主扩散问题的特点,使用Crank-Nicolson差分-流线扩散计算格式,提高了数值解的稳定性.得到的L2误差估计关于空间剖分步长是拟最优的,关于时间步长具有二阶精度.     

A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids

The momentary state of a semiconductor device of heat conduction is described by a system of four nonlinear partial differential equations. One elliptic equation is for the electrostatic, two parabolic equations are for the electron concentration and the hole concentration, and one heat exchange equation is for the temperature. According to the necessary of practical numerical simulations and based on the balance equation, finite difference schemes for two-dimensional transient behavior of a semiconductor device of heat conduction on composite triangular grids are constructed. Studying their stability and convergence properties, the error estimate in the energy norm is obtained. Finally, a numerical example is given.     

Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems

Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions. The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity. The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation. A mixed finite volume element approximation, keeping physical conservation law, is used to get numerical values of the electric potential and the accuracy is improved one order. Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences. This method can overcome numerical oscillation, dispersion and decreases computational complexity. Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened. An optimal second-order error estimate in L² norm is derived by using prior estimate theory and other special techniques of partial differential equations. This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.     

半导体器件瞬态模拟的对称正定混合元方法

提出具有对称正定特性的混合元格式求解非稳态半导体器件瞬态模拟问题。提出一个最小二乘混合元方法、一个新的具有分裂和对称正定性质的混合元格式和一个解经典混合元方程的对称正定失窃工格式求解电场位势和电场强度方程;提出一个最小二乘混合元格式求解关于电子与空穴浓度的非稳态对流扩散方程,浓度函数和流函数被同时求解;采用标准的有限元方法求解热传导方程。建立了误差分析理论。     

A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis

The mathematical system is formulated by four partial differential equations combined with initialboundary value conditions to describe transient behavior of three-dimensional semiconductor device with heat conduction. The first equation of an elliptic type is defined with respect to the electric potential, the successive two equations of convection dominated diffusion type are given to define the electron concentration and the hole concentration, and the fourth equation of heat conductor is for the temperature. The electric potential appears in the equations of electron concentration, hole concentration and the temperature in the formation of the intensity. A mass conservative numerical approximation of the electric potential is presented by using the mixed finite volume element, and the accuracy of computation of the electric intensity is improved one order. The method of characteristic fractional step difference is applied to discretize the other three equations, where the hyperbolic terms are approximated by a difference quotient in the characteristics and the diffusion terms are discretized by the method of fractional step difference. The computation of three-dimensional problem works efficiently by dividing it into three one-dimensional subproblems and every subproblem is solved by the method of speedup in parallel. Using a pair of different grids (coarse partition and refined partition), piecewise threefold quadratic interpolation, variation theory, multiplicative commutation rule of differential operators, mathematical induction and priori estimates theory and special technique of differential equations, we derive an optimal second order estimate in L²-norm. This numerical method is valuable in the simulation of semiconductor device theoretically and actually, and gives a powerful tool to solve the international problem presented by J. Douglas, Jr.     

A Finite Difference Scheme for a Semiconductor Device Problem on Grids with Local Refinement in Time and Space

The momentary state of a semiconductor device is described by a system of three nonlinear partial differential equations. A finite difference scheme for simulating transient behaviors of a semiconductor device on grids with local refinement in time and space is constructed and studied. Error analysis is presented and is illustrated by numerical examples.     

半导体设备热传输中的隐式-显式多步有限元法

考虑热引导半导体设备中的传输行为，用一个有限元法离散电子位势所满足的Rpoisson方程；用隐式－显式多步有限元法处理电子密度和空洞密度满足的两个对流－扩散方程，热传导方程用隐式多步有限元法离散，推导了优化的L^2范误差估计。     

三维热传导型半导体问题的交替方向有限元方法

1　引　　言三维热传导型半导体器件瞬态问题的数学模型由四个非线性偏微分方程描述[1 ,2 ] ,记 Ω为 Ω=[0 ,1 ] 3的边界 ,三维问题-Δψ =α( p -e+ N( x) ) ,　　 ( x,t)∈Ω× [0 ,T] ,( 1 .1 ) e t= . ( De( x) e-μe( x) e ψ) -R( e,p,T) ,　 ( x,t)∈Ω× ( 0 ,T] ,( 1 .2 ) p t= . ( Dp( x) p +μp( x) p ψ) -R( e,p,T) ,　 ( x,t)∈Ω× ( 0 ,T] ,( 1 .3 )ρ( x) T t-ΔT =[( Dp( x) p +μp( x) p ψ) -( De( x) e-μe( x) e ψ) ] . ψ,　　　　　　 ( x,t)∈Ω× ( 0 ,T] . ( 1 .4 )ψ( x,t) =e( x,t) =p( …     

The modified method of characteristics with mixed finite element domain decomposition procedures for the transient behavior of a semiconductor device

For the transient behavior of a semiconductor device, the modified method of characteristics with mixed finite element domain decomposition procedures applicable to parallel arithmetic is put forward. The electric potential equation is described by the mixed finite element method, and the electric, hole concentration and heat conduction equations are treated by the modified method of characteristics finite element domain decomposition methods. Some techniques, such as calculus of variations, domain decomposition, characteristic method, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L² norm are derived for the error in the approximation solution. Thus the well‐known theoretical problem has been thoroughly and completely solved.© 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 28: 353–368 2012