大面积Bi单晶纳米线阵列的制备

在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.     

金纳米线阵列制备及其光谱特性

利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论.     

还原氧化石墨烯表面聚苯胺纳米阵列的制备及电化学电容性能

本文以阳极氧化铝(AAO)膜为模板,通过恒电位法在自组装还原氧化石墨烯(rGO)膜表面制备有序聚苯胺(PANI)纳米线阵列。通过拉曼光谱和场发射扫描电子显微镜分别对其结构和微观形貌进行了表征,并对PANI纳米线阵列的电化学电容性能进行了测试。结果表明,rGO膜表面可电沉积PANI,电沉积得到的PANI纳米线阵列具有比PANI薄膜材料更高的电容和比电容。     

Zn_xCd_(1-x)S纳米线的可控合成及其可调的光学性质（英文）

采用简单的气相沉积法,合成了不同组成的Znx Cd1-x S(0x1)纳米线.利用扫描电子显微镜、透射电子显微镜和电子能谱研究了所制得的纳米线的表面形貌和组成.该方法以Au为催化剂,简单控制起始物质的相对用量和沉积温度,可以获得可控的Zn/Cd比例.X射线衍射结果表明所制得的Znx Cd1-x S纳米线具有纤维锌矿的单晶结构.根据制得纳米线的表面形貌讨论了纳米线可能的生长机理为"底部生长"机理.利用拉曼光谱和光致发光光谱研究了Znx Cd1-x S纳米线的光学性质,其纵向光学(LO)声子的拉曼位移频率随着组成的变化在ZnS和CdS的拉曼位移频率之间连续变化.光致发光光谱中同时存在带边发光和缺陷发光.Znx Cd1-x S纳米线的带间跃迁的频率可随着组成的调节而调节,纳米线的禁带宽度介于ZnS(3.63 eV)和CdS(2.41 eV)的禁带宽度之间.     

Ag核Au壳双金属复合纳米线的制备及其表面增强拉曼光谱研究

采用氧化铝模板结合交流电沉积技术制备纯银纳米线, 然后通过化学还原方法, 并控制加入的金盐的量, 在已制备好的银线表面包裹不同厚度的金壳层, 得到具有核壳结构的Ag_核Au_壳复合纳米线. 采用电子显微镜(SEM, TEM)和表面增强拉曼光谱对该复合结构纳米线进行相关表征, 纳米线的表面形貌与加入的金盐的量有关. 以苯硫酚(TP)和对巯基苯胺(PATP)为探针分子, 研究了此类复合纳米线的表面增强拉曼散射效应. 并以PATP在金银纳米线表面吸附的表面增强拉曼光谱的差别为探针, 表征了复合纳米线表面金的包裹程度, 结果表明一定厚度的包裹程度可制备无针孔效应的核壳结构金银复合纳米线.     

GaSb纳米线的CVD可控制备及其光学表征

采用CVD法合成GaSb纳米线,并分析生长时间对其长度的影响,随后对其进行光学表征.实验过程中,分别采用喷金法和滴金法对硅片进行预处理,再置于相同条件下制备GaSb纳米线;之后对其进行表征分析,根据扫描电子显微镜（SEM）表征结果证实,两种方法制备的纳米线都满足VLS生长机制.且发现GaSb纳米线的生长长度,可以通过改变其生长时间来进行控制.通过该纳米线的透射电子显微镜图（TEM）、X射线衍射图（XRD）等结构表征,表明该纳米线为结晶品质优良的立方闪锌矿结构;同时,从GaSb纳米线的拉曼光谱（Raman）及光致发光谱（PL）可以反映该纳米线具有优良的光学性质.由此证明,采用CVD法制得的纳米线光学性质优异,且可以实现可控制备.     

云母晶面上准外延生长的胶原蛋白纳米线阵列的性质研究

胶原蛋白纤维与同样具有周期性结构表面的羟磷灰石等矿物质晶体能够通过多种作用在介观尺度上相互识别,从而有效地进行规范骨骼、牙齿等器官生长的生物矿化.在本研究中,反相利用生物矿化原理,开发出一种与热壁外延生长(Hot wall epitaxy)技术效果相似的生物大分子纳米线阵列的简单制备技术,成功地将5～10 μg/mL的天然I型鼠尾胶原蛋白单体溶液在云母晶体的(001)晶面上培育成取向单一且长程有序的胶原蛋白纳米线阵列.原子力显微镜实验结果表明,纳米线阵列随胶原蛋白单体浓度增大而变得致密,但是单条纳米线的宽度与高度较为稳定,分别约为60.0和1.5 nm.有纳米线覆盖的云母晶面亲水性好,晶面接触角由25.8°降为9.5°.基于电子背面散射衍射和透射电子显微镜的分析表征结果,纳米线的取向应沿云母[110]方向, 更详实地验证了胶原蛋白纳米线的准外延生长机理.     

β-FeOOH纳米线的制备及表征

通过无机铁(III)盐的水解在常温条件下制备了β-FeOOH 纳米线, 并用透射电子显微镜(TEM)、高分辨透射电镜(HRTEM)、X射线衍射(XRD)及选区电子衍射(SAED)对其形貌及结构进行了表征. 电镜结果表明, 所得到的纳米线直径约 60 nm, 长度为4～5 μm, 且沿[001]方向生长. XRD结果表明纳米线为四方相β-FeOOH, 在常温下结晶性良好. 研究表明FeCl₃浓度对纳米线生长有很大影响, 只有当FeCl₃浓度合适时, 才能制备出高质量的纳米线.     

有序CdS纳米线阵列的制备和光学特性

应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.     

单晶Ni纳米线阵列的制备与磁性能

采用恒电流沉积方法, 在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征. 利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究. 结果表明, 单晶镍纳米线阵列的易磁化方向为纳米线轴向, 并且与多晶纳米线相比显示出了更高的矫顽力. 直径为30 nm的纳米线具有较高的矫顽力(8.236×104 A/m)和较高的剩磁比(Mr＝0.94Ms).     

Size-dependent orientation growth of large-area ordered Ni nanowire arrays

Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures.     

Large-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties

Large-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed.     

SERS,AFM and Electrochemical Characterization of Metal Nanorod and Nanowire Arrays

Metal nanowires (nanorods) have novel properties and potential applications in a wide field^[1]. Many two-dimensional nanowire arrays of semiconductors and metals with different diameter and length have been made using template synthesis method^[2]. The nanorod arrays of various metals (e.g., Cu, Ag,Au, Ni and Co) with different diameters from about 15 nm to 130 nm were fabricated by electrodeposition of the metals into the highly ordered nanochannel arrays in alumina film followed by partial removal of the film in phosphoric acid or sodium hydroxide. In the present work, surface-enhanced Raman spectroscopy (SERS), AFM and electrochemical methods have been used to characterize the metal nanorod (nanowire) arrays. Tapping mode AFM and SERS were performed on Nanoscope Ⅲa (Digital Instruments) and on confocal Raman microscopy (LabRam I,Dilor) respectively.     

Effective deposition potential induced size-dependent orientation growth of Bi-Sb alloy nanowire arrays

The influence of effective deposition potential on the orientation and diameter of Bi(1-x)Sbx alloy nanowire arrays by pulsed electrodeposition technique was reported. X-ray diffraction, field-emission scanning electron microscopy, and transmission electron microscopy analysis show that the orientation of the Bi(1-x)Sbx nanowires can be turned from the [110] to the [202] direction by increasing the effective deposition potential, and the nanowires fully fill in the pores of the AAM in the lower potential region, while in the higher potential region the nanowires partly fill the pores of the AAM. The origin of those phenomena and the growth mechanism of the nanowire are discussed together with composition analysis.     

Synthesis of ordered Al nanowire arrays

Ordered Al nanowire arrays with the same nanowire density but the diameters decrease radially embedded in one piece of anodic alumina membranes were successfully fabricated by two-step synthesis: electrodeposition of Zn and replacement in AlCl₃ solution. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected-area electron diffraction techniques were used to characterize the Al nanowires obtained. SEM and TEM images taken from the different areas of Al nanowire arrays show that we can control the growth of aligned Al nanowires with different diameters in a single process at the same time. The investigation results not only have potential applications in photoelectric devices but also open up a new method for fabricating nano-scale materials.     

Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4

Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained.     

Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires

Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi₂Te₃/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.